| TOSOH SMD, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120000594 | SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SAME - A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target to a high strength backing plate and further creating a vacuum seal between the target and the backing plate using friction stir welding processes. | 01-05-2012 |
| 20110219847 | CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING - A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. | 09-15-2011 |
| 20110203921 | METHOD OF BONDING ROTATABLE CERAMIC TARGETS TO A BACKING STRUCTURE - This invention relates to a rotatable cylindrical magnetron sputtering apparatus and related process. More specifically, the invention relates to a cylindrical target assembly for a cylindrical magnetron sputtering device which includes a target portion where the target portion is metal, metal oxide, or ceramic and is not bonded to any backing tube. Instead, the cylindrical target is resiliently, yet fixedly mounted to the backing tube by a multiplicity of resilient, yieldable contacts. The assembly allows the target portion to heat up uniformly and expand, thereby allowing the cylindrical magnetron to operate at increased power levels. | 08-25-2011 |
| 20110139614 | SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET - A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target. | 06-16-2011 |
| 20110056828 | MONOLITHIC ALUMINUM ALLOY TARGET AND METHOD OF MANUFACTURING - Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength. | 03-10-2011 |
| 20100105296 | ULTRA SMOOTH FACE SPUTTER TARGETS AND METHODS OF PRODUCING SAME - A method is provided to remove a thickness of a sputter target surface deformation layer to thereby achieve a reduced burn-in time during sputtering operations. The method comprises extrusion hone polishing of the target surface with a visco-elastic abrasive medium. | 04-29-2010 |
| 20100051453 | Process for making dense mixed metal Si3N4 targets - A composition and method for fabricating high-density Ta-Al-O, Ta-Si-N, and W-Si-N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si | 03-04-2010 |
| 20100044415 | Sputtering target assembly and method of making same - A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target ( | 02-25-2010 |
| 20100038241 | Systems and methods for a target and backing plate assembly - A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results. | 02-18-2010 |
| 20100000860 | Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same - The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets. | 01-07-2010 |
| 20090235709 | Non-planar sputter targets having crystlallographic orientations promoting uniform deposition - A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. | 09-24-2009 |
| 20090214374 | High purity target manufacturing methods - A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc. | 08-27-2009 |
| 20090160137 | Low leak O-ring seal - A vacuum seal having an O-ring between two mating parts. One of the mating parts has a groove configured to receive the O-ring. The groove has a modified dovetail shape with at least one side wall having a compound slope formed with a first portion forming an angle of less than 90 degrees with respect to a base wall and a second portion extending substantially perpendicular to the sealing face of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width of the groove mouth is at least 94% of the diameter of the O-ring. | 06-25-2009 |
| 20090120784 | Sputter Targets with Expansion Grooves for Reduced Separation - A magnetron sputtering target having at least one expansion groove strategically located on the target surface such that, during magnetron sputtering, contamination of the target surface due to separation and de-lamination of re-deposited sputtered particles from the target surface is reduced. The sputter target comprises a re-deposited layer having secondary cracks and a characteristic distance between cracks for supporting the inherent material stress associated with the thermal expansion of the target. The expansion groove is then positioned substantially within the characteristic distance to reduce separation and de-lamination of the re-deposited layer from the target surface. | 05-14-2009 |
| 20090078391 | Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering - Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 μm are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate. | 03-26-2009 |
| 20090022982 | Electronic Device, Method of Manufacture of Same and Sputtering Target - An electronic device having a first electrode including a metal oxide and a second electrode including an aluminum alloy film and manufacturing technology therefor. The second electrode is directly contacted and electrically connected to the first electrode, wherein, in the contact interface between the aluminum alloy film and said first electrode, at least a part of alloy components constituting the aluminum alloy film exist as a precipitate extending across the contact interface to contact the metal oxide to the aluminum alloy film by the precipitate. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows for elimination of a barrier metal in such an electronic device. | 01-22-2009 |
| 20090008786 | Sputtering Target - The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target. | 01-08-2009 |
