| TOSHIBA MATERIALS CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120119349 | INSULATION SHEET MADE FROM SILICON NITRIDE, AND SEMICONDUCTOR MODULE STRUCTURE USING THE SAME - An insulation sheet made from silicon nitride comprising: a sheet-shaped silicon-nitride substrate which contains β-silicon-nitride crystal grains as a main phase; and a surface layer which is formed on one face or both front and back faces of surfaces of the silicon-nitride substrate and is formed from a resin or a metal which includes at least one element selected from among In, Sn, Al, Ag, Au, Cu, Ni, Pb, Pd, Sr, Ce, Fe, Nb, Ta, V and Ti. A semiconductor module structure using the insulation sheet made from silicon nitride. | 05-17-2012 |
| 20120098020 | CERAMIC SUBSTRATE FOR MOUNTING A DEVICE, CERAMIC SUBSTRATE FOR MOUNTING AN LED, LED LAMP, HEADLIGHT AND ELECTRONIC PARTS - According to one embodiment, a ceramic substrate for mounting a device is provided. The ceramic substrate includes a through-hole and a recessed portion provided on at least one edge surface thereof. | 04-26-2012 |
| 20120097297 | High hardness, high corrosion resistance and high wear resistance alloy - There are provided a high hardness, high corrosion resistance and high wear resistance alloy, wherein the alloy is an aging heat treated Cr(chromium)-Al(aluminum)-Ni(nickel)-base alloy, the proportion of a mixed phase of (α phase+γ′ phase+γ phase) precipitated at grain boundaries of γ phase grains in a metal structure in the cross section of the alloy is not less than 95% in terms of area ratio, and the intensity ratio as measured by X-ray diffractometry of the alloy is not less than 50% and not more than 200% in terms of Iα(110)/[Iγ(200)+Iγ′(004)]×100, and a component comprising this alloy, a material for an alloy which can form this alloy, and a process for producing this alloy. | 04-26-2012 |
| 20120065057 | PHOTOCATALYST BODY, PHOTOCATALYST DISPERSION, AND METHOD FOR MANUFACTURING PHOTOCATALYST BODY - According to one embodiment, a photocatalyst body satisfies at least one condition described below, (1) a ratio of an absorption intensity at a wave number of 3450 cm | 03-15-2012 |
| 20120062821 | WHITE LED, BACKLIGHT USING SAME, AND LIQUID CRYSTAL DISPLAY DEVICE CONFORMING TO EBU STANDARD - In a embodiment, a white LED for a backlight of a liquid crystal display device conforming to the EBU standard includes an ultraviolet (purple) light-emitting element, and a phosphor layer which contains 1 to 10 wt % of a green phosphor including a divalent europium-activated silicate phosphor, 40 to 80 wt % of a blue phosphor including at least one selected from a divalent europium-activated halo-phosphate phosphor and a divalent europium-activated aluminate phosphor, and 10 to 50 wt % of a red phosphor including at least one selected from a europium-activated lanthanum oxysulfide phosphor and a europium-activated yttrium oxysulfide phosphor. | 03-15-2012 |
| 20120038038 | ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE CIRCUIT BOARD, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE - The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate. | 02-16-2012 |
| 20110319931 | RHENIUM TUNGSTEN WIRE, METHOD OF MANUFACTURING THE WIRE AND MEDICAL NEEDLE USING THE WIRE - The present invention provides a rhenium tungsten wire comprising 10 to 30 mass % of rhenium and balance of tungsten, and having a wire diameter D of 0.10-0.40 mm, wherein a tensile strength T (N/mm | 12-29-2011 |
| 20110303873 | SOLID SCINTILLATOR, RADIATION DETECTOR, AND TOMOGRAPH - An object of the present invention is to provide a solid scintillator having short afterglow and high output, and a radiation detector and a tomograph using the solid scintillator. A solid scintillator according to the present invention is a solid scintillator comprising a polycrystal containing a crystal of a Gd garnet structure oxide having a composition ratio represented by the following formula (1): | 12-15-2011 |
| 20110248819 | ANTENNA CORE AND METHOD OF MANUFACTURING THE SAME, AND ANTENNA AND DETECTION SYSTEM USING THE SAME - An antenna core includes a laminate of a plurality of Co-based amorphous magnetic alloy thin strips in which a length ratio of a long axis to a short axis is greater than 1. 60% or more of the Co-based amorphous magnetic alloy thin strips in terms of the number of the thin strips as percentage have a line-shaped mark formed along the long axis on at least one surface thereof. An antenna includes the antenna core and a winding wound around the antenna core along the long axis. | 10-13-2011 |
| 20110212832 | AQUEOUS DISPERSION LIQUID AND COATING MATERIAL, FILM, AND PRODUCT USING THE SAME - In one embodiment, an aqueous dispersion liquid contains at least one particles selected from tungsten oxide particles and tungsten oxide composite particles. A mean primary particle diameter (D50) of the particles is in the range of 1 nm to 400 nm. In the aqueous dispersion liquid, concentration of the particles is in the range of 0.1 mass % to 40 mass %, and pH is in the range of 1.5 to 6.5. The aqueous dispersion liquid excels in dispersibility of particles and capable of maintaining good liquidity for a long period. | 09-01-2011 |
| 20110212298 | HYDROPHILIC MEMBER AND HYDROPHILIC PRODUCT USING THE SAME - In one embodiment, a hydrophilic member includes a substrate having a surface and particles existing at least on the surface of the substrate. The particles are constituted of at least one selected from tungsten oxide particles and tungsten oxide composite particles. The substrate surface on which the particles exist has an arithmetic mean roughness Ra in the range of 1 nm to 1000 nm with a reference length of 100 μm, and exhibits hydrophilicity independently of light. | 09-01-2011 |
| 20110210696 | NON-CONTACT TYPE POWER RECEIVING APPARATUS, ELECTRONIC EQUIPMENT AND CHARGING SYSTEM USING THE POWER RECEIVING APPARATUS - A non-contact type power receiving apparatus including: a power receiving coil having a spiral coil; a rectifier; a secondary battery; an electronic device operated by being supplied with direct voltage from the secondary battery, wherein a composite magnetic body is provided to at least one portion between the secondary battery and the spiral coil, and a portion between the electronic device and the spiral coil. The composite magnetic body includes at least first and other layers of magnetic sheets through an insulating layer in which when a relative magnetic permeability of the first magnetic sheet provided to a side of the spiral coil is μd, a thickness of the first magnetic sheet is tu, an average relative magnetic permeability of the other magnetic sheets other than the first magnetic sheet is μu, and a total thickness of the other magnetic sheets is tu, the composite magnetic body satisfies the following relations: μd·td≦60 [mm]; and μu·tu≧100 [mm]. | 09-01-2011 |
| 20110205765 | INDUCTANCE ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND SWITCHING POWER SUPPLY USING THE SAME - An inductance element ( | 08-25-2011 |
| 20110128466 | WHITE LED, AND BACKLIGHT AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - A white LED includes a light emitting element with a light emission peak wavelength equal to or longer than 380 nm and equal to or shorter than 420 nm, and a phosphor layer containing three or more types of phosphors including at least a blue phosphor, a green phosphor, and a red phosphor and disposed in a manner to cover at least part of the light emitting element. The phosphor layer has a first phosphor layer and a second phosphor layer disposed in an opposite side of a side of the light emitting element of the first phosphor layer. In the first phosphor layer, a content of the blue phosphor in an entire phosphor contained in the first phosphor layer is equal to or less than 5 mass %, or the blue phosphor is not contained. In the second phosphor layer, a content of phosphor other than the blue phosphor in an entire phosphor contained in the second phosphor layer is equal to or less than 5 mass %, or no phosphor other than the blue phosphor is contained. | 06-02-2011 |
| 20110116005 | LINEAR WHITE LIGHT SOURCE, AND BACKLIGHT AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - A linear white light source | 05-19-2011 |
| 20110109222 | LIGHT EMITTING DEVICE, AND BACKLIGHT, LIQUID CRYSTAL DISPLAY DEVICE AND ILLUMINATION DEVICE USING THE SAME - A light emitting device | 05-12-2011 |
| 20110103553 | X-RAY TUBE TARGET, X-RAY TUBE USING THE SAME, X-RAY INSPECTION DEVICE AND METHOD OF PRODUCING X-RAY TUBE TARGET - According to one embodiment, there is provided an X-ray tube target. The X-ray tube target has a structure in which a carbon base material is bonded with an Mo base material or Mo alloy base material with a joint layer. The joint layer includes an MoNbTi diffusion phase, an NbTi alloy phase, an Nb-rich phase and a ZrNb alloy phase when the ratios of components in the joint layer are detected by EPMA. | 05-05-2011 |
| 20110073899 | WHITE LIGHT SOURCE, BACKLIGHT, LIQUID CRYSTAL DISPLAY APPARATUS, AND ILLUMINATING APPARATUS - A white light source includes: an insulating substrate; a light-emitting diode chip provided on the insulating substrate and that emits ultraviolet light with a wavelength of 330 nm to 410 nm; and a phosphor layer formed to cover the light-emitting diode chip, including a red emitting phosphor, a green emitting phosphor, and a blue emitting phosphor as a phosphor, and the phosphors are dispersed in a cured transparent resin, wherein when it is assumed that the shortest distance between a surface of the phosphor layer and a peripheral portion of the light-emitting diode chip is t(mm) and the mean free path defined by the following expression (1) is L(mm), the t and L satisfy 3.2≦t/L. | 03-31-2011 |
| 20110052662 | ANTIBACTERIAL MATERIAL AND ANTIBACTERIAL FILM AND ANTIBACTERIAL MEMBER USING THE SAME - In one embodiment, an antibacterial material includes at least one microparticles selected from tungsten oxide microparticles and tungsten oxide complex microparticles. The microparticles, which are undergone a test to evaluate viable cell count by inoculating in a test piece, to which the microparticles are adhered in a range of 0.02 mg/cm | 03-03-2011 |
| 20110039068 | WEAR RESISTANT MEMBER, WEAR RESISTANT DEVICE AND METHOD FOR MANUFACTURING THE WEAR RESISTANT MEMBER - A wear resistant member formed of silicon nitride sintered body having a volume of 4000 mm | 02-17-2011 |
| 20110031523 | WHITE LIGHT EMITTING DEVICE, BACKLIGHT, LIQUID CRYSTAL DISPLAY DEVICE, AND ILLUMINATING DEVICE - A white light emitting device includes a blue light emitting diode chip that emits blue light in a specific wavelength band, a first resin layer that seals the blue light emitting diode chip and includes a cured product of silicone resin, and a second resin layer that covers the first resin layer and includes phosphor powder, which absorbs the blue light and emits light in a specific wavelength band, and a cured product of transparent resin. The phosphor powder has a composition represented by the following Formula (1): | 02-10-2011 |
| 20110024684 | SOLID SCINTILLATOR, RADIATION DETECTOR, AND X-RAY TOMOGRAPHIC IMAGING APPARATUS - The solid scintillator according to the present invention is expressed by the following formula (1): | 02-03-2011 |
| 20110006334 | WHITE LED LAMP, BACKLIGHT, LIGHT EMITTING DEVICE, DISPLAY DEVICE AND ILLUMINATION DEVICE - A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less. In the white LED lamp, a backlight, and an illumination device using the white LED lamp an amount of UV light to be contained in the released light and an amount of heat to be generated from the lamp are decreased to be small. | 01-13-2011 |
| 20100322275 | WHITE LIGHT-EMITTING LAMP AND ILLUMINATING DEVICE USING THE SAME - A white light-emitting lamp ( | 12-23-2010 |
| 20100321057 | PROBE PIN AND METHOD OF MANUFACTURING THE SAME - A probe pin having a bent portion at its tip end portion is used for a probe card, the probe pin is configured such that an angle constituted by a direction of work groove generated at a time of machine-working of a tip end portion of the probe pin and a longitudinal direction of a metal wire is set to 45 degree or less, or both directions are set to be almost parallel to each other. Due to above configuration, even if the tip end portion of the probe pin is subjected to a bending work and a worked surface is formed with recessed portion, a breakage of the probe pin caused by the recessed portion existing on the worked surface and functioning as a starting point of the breakage can be effectively prevented whereby a lowering of a production yield of the probe pin can be greatly suppressed. | 12-23-2010 |
| 20100292075 | VISIBLE LIGHT RESPONSE-TYPE PHOTOCATALYST POWDER, VISIBLE LIGHT RESPONSE-TYPE PHOTOCATALYST MATERIAL USING THE VISIBLE LIGHT RESPONSE-TYPE PHOTOCATALYST POWDER, PHOTOCATALYST COATING MATERIAL, AND PHOTOCATALYST PRODUCT - In one embodiment, a visible light responsive photocatalyst powder has organic gas decomposition performance that responds nonlinearly to an amount of irradiated light under visible light in an illuminance range of not less than 200 lx nor more than 2500 lx. The visible light responsive photocatalyst powder has a gas decomposition rate of 20% or more, for example, when visible light having only a wavelength of not less than 380 nm and an illuminance of 2500 lx is irradiated, the gas decomposition rate (%) being set as a value calculated based on [formula: (A−B)/A×100], where A represents a gas concentration before light irradiation and B represents a gas concentration when not less than 15 minutes have elapsed from the light irradiation and, at the same time, the gas concentration is stable, the gas concentrations being measured while allowing an acetaldehyde gas having an initial concentration of 10 ppm to flow into a flow-type apparatus in which 0.2 g of a sample is placed. | 11-18-2010 |
| 20100275727 | GETTER MATERIAL AND EVAPORABLE GETTER DEVICE USING THE SAME, AND ELECTRON TUBE - The present invention provides a getter material configured by a pressed powder mixture comprising Ba—Al alloy powder and Ni powder, wherein when the pressed powder mixture is heated in a vacuum atmosphere or an inert gas atmosphere, a temperature at which an exothermic reaction starts is ranging from 750° C. to 900° C. According to this getter material, since the temperature at which the pressed powder mixture starts the exothermic reaction is set within a range from 750° C. to 900° C., there can be provided a getter material and an evaporation type getter device capable of suitably controlling an evaporation amount of getter components under a stable condition, and is excellent in responsiveness because a time ranging from a starting time of heating the getter material to a starting time of evaporation of the getter components can be shortened. In addition, the metal container to be filled with the getter material is free from deformation and melting, and a heat-evaporation process time of the getter material can be shortened, so that there can be provided the evaporation type getter device excellent in responsiveness because a time required for the electron tube to attain to a predetermined vacuum degree can be also shortened. | 11-04-2010 |
| 20100237361 | WHITE LIGHT-EMITTING LAMP FOR ILLUMINATION AND ILLUMINATING DEVICE USING THE SAME - A white light emitting lamp | 09-23-2010 |
| 20100225849 | LIGHT EMITTING MODULE, BACKLIGHT USING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE - A light emitting module | 09-09-2010 |
| 20100211048 | MEDICAL GUIDE WIRE - Disclosed is a medical guide wire that can realize improved insertability and imaging properties. The medical guide wire comprises a medical guide wire main body part comprising a body part and a frontal end part having a smaller wire diameter than the body part, and a coil part and a cap part provided at the frontal end part. The coil part comprises a wire which is a clad wire comprising a core part that is composed mainly of at least one of tungsten and molybdenum and a covering part that covers the core part and is composed mainly of titanium. | 08-19-2010 |
| 20100204041 | VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYST POWDER, AND VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYTIC MATERIAL, PHOTOCATALYTIC COATING MATERIAL AND PHOTOCATALYTIC PRODUCT EACH USING THE SAME - A visible-light-responsive photocatalyst powder includes a tungsten oxide powder. The tungsten oxide powder has color whose a* is −5 or less, b* is −5 or more, and L* is 50 or more when the color of the powder is expressed by an L*a*b* color system. Further, the tungsten oxide powder has a BET specific surface area in a range of 11 to 820 m | 08-12-2010 |
| 20100204040 | VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYST POWDER, METHOD OF MANUFACTURING THE SAME, AND VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYTIC MATERIAL, PHOTOCATALYTIC COATING MATERIAL AND PHOTOCATALYTIC PRODUCT EACH USING THE SAME - A visible-light-responsive photocatalyst powder includes a tungsten oxide powder. When the tungsten oxide powder is measured by X-ray diffractometry, (1) among intensity ratios of a peak A (2θ=22.8 to 23.4°), a peak B (2θ=23.4 to 23.8°), a peak C (2θ=24.0 to 24.25°), and a peak D (2θ=24.25 to 24.5°), an A/D ratio and a B/D ratio each fall within a range of 0.5 to 2.0, and a C/D ratio falls within a range of 0.04 to 2.5, (2) an intensity ratio (E/F) of a peak E (2θ=33.85 to 34.05°) to a peak F (2θ=34.05 to 34.25°) falls within a range of 0.1 to 2.0, and (3) an intensity ratio (G/H) of a peak G (2θ=49.1 to 49.7°) to a peak H (2θ=49.7 to 50.3°) falls within a range of 0.04 to 2.0, and the tungsten oxide powder has a BET specific surface area in a range of 1.5 to 820 m | 08-12-2010 |
| 20100201474 | INDUCTANCE ELEMENT, METHOD FOR MANUFACTURING THE INDUCTANCE ELEMENT, AND SWITCHING POWER SUPPLY USING THE INDUCTANCE ELEMENT - In one embodiment, an inductance element includes a toroidal core and a bottomed insulating resin case. The bottomed insulating resin case includes a cylindrical outer wall section, a cylindrical inner wall section, a bottom section, an open section and a hollow section. The cylindrical outer wall section has an extending section exceeding the height of the toroidal core. The open section of the insulating resin case is covered with a cover portion having a bent section formed by bending an extending section of the cylindrical outer wall section. | 08-12-2010 |
| 20100194415 | PROBE NEEDLE MATERIAL, PROBE NEEDLE AND PROBE CARD EACH USING THE SAME, AND INSPECTION PROCESS - Disclosed is a probe needle material used for producing a probe needle which is used in contact with an inspection object to inspect electrical characteristics of the inspection object, comprising not less than 0.1% by volume but not more than 3.5% by volume of at least one compound selected from the group consisting of titanium boride, zirconium boride, hafnium boride, niobium boride, tantalum boride, chromium boride, titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide, zirconium oxide, hafnium oxide and chromium oxide and the balance of a tungsten alloy mainly consisting of tungsten. | 08-05-2010 |
| 20100193001 | THERMOELECTRIC CONVERSION MODULE, AND HEAT EXCHANGER, THERMOELECTRIC TEMPERATURE CONTROL DEVICE AND THERMOELECTRIC GENERATOR EMPLOYING THE SAME - A thermoelectric conversion module ( | 08-05-2010 |
| 20100156344 | POWER RECEIVER, AND ELECTRONIC APPARATUS AND NON-CONTACT CHARGER USING SAME - An electronic apparatus ( | 06-24-2010 |
| 20100113254 | METHOD FOR PRODUCING TUNGSTEN TRIOXIDE POWDER FOR PHOTOCATALYST, TUNGSTEN TRIOXIDE POWDER FOR PHOTOCATALYST, AND PHOTOCATALYST PRODUCT - A method for producing a tungsten trioxide powder for a photocatalyst according to the present invention is characterized by comprising a sublimation step for obtaining a tungsten trioxide powder by subliming a tungsten metal powder or a tungsten compound powder by using inductively coupled plasma process in an oxygen atmosphere, and a heat treatment step for heat-treating the tungsten trioxide powder obtained in the sublimation step at 300° C. to 1000° C. for 10 minutes to 2 hours in an oxidizing atmosphere. A tungsten trioxide powder which is obtained by the method for producing a tungsten trioxide powder for a photocatalyst according to the present invention has excellent photocatalytic performance under visible light. | 05-06-2010 |
| 20100107982 | VACUUM DEPOSITION APPARATUS PART AND VACUUM DEPOSITION APPARATUS USING THE PART - A vacuum depositing apparatus part constituting a vacuum depositing apparatus for depositing a thin film forming material vaporized in a vacuum chamber on a substrate, the vacuum depositing apparatus part includes: a part body; and a sprayed film integrally formed to a surface of the part body, the sprayed film preferably has a plurality of dimples formed to a surface thereof, and the dimples preferably have an average depth of 10 μm or less. The vacuum depositing apparatus part is capable of stably and effectively preventing a peel-off and dropping-off of a film forming material adhered to the apparatus parts during the film forming operation, capable of suppressing a lowering of productivity of the film product or suppressing an increase of a film forming cost accompanied by a frequent cleaning of the depositing apparatus or a frequent exchange of the apparatus part, and capable of preventing a generation of fine particles. | 05-06-2010 |
| 20100085778 | INDUCTANCE ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND SWITCHING POWER SUPPLY USING THE SAME - An inductance element ( | 04-08-2010 |
| 20100054652 | SILICON NITRIDE SINTERED COMPACT AND SLIDING MEMBER USING THE SAME - A silicon nitride sintered compact contains silicon nitride grains, and a sintering aid component in a range of 2 to 15 mass %. The silicon nitride grains include needle crystal grains each having a long diameter L of 10 μm or less and a ratio (L/S) of the long diameter L to a short diameter S of 5 or more, by 50% or more in area ratio in a crystalline structure of the silicon nitride sintered compact. The silicon nitride sintered compact is used as a sliding member like a bearing ball ( | 03-04-2010 |
| 20090316076 | ELECTRODE FOR COLD CATHODE TUBE, AND COLD CATHODE TUBE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - An electrode ( | 12-24-2009 |
| 20090290685 | MOLYBDENUM ALLOY; AND X-RAY TUBE ROTARY ANODE TARGET, X-RAY TUBE AND MELTING CRUCIBLE USING THE SAME - This invention provides a molybdenum alloy having excellent high-temperature strength, an X-ray tube rotary anode target having high-temperature strength, an X-ray tube, and a melting crucible. The molybdenum alloy, having an oxygen content of not more than 50 ppm, comprising 0.2 to 1.5% of a carbide by weight and the balance, molybdenum, wherein the carbide is at least one selected from titanium carbide, hafnium carbide, zirconium carbide, and tantalum carbide, and a part of the carbides has an aspect ratio of not less than 2. | 11-26-2009 |
| 20090285995 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME - An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith. | 11-19-2009 |
| 20090283309 | CERAMIC-METAL BONDED BODY, METHOD FOR MANUFACTURING THE BONDED BODY AND SEMI-CONDUCTOR DEVICE USING THE BONDED BODY - Problem is to provide a ceramic-metal composite and a semiconductor device that exhibits high bonding strength, heat cycle resistance, durability, and reliability even if the ceramic-metal composite is used in a power module. | 11-19-2009 |
| 20090243780 | FLAT MAGNETIC ELEMENT AND POWER IC PACKAGE USING THE SAME - A planar magnetic device | 10-01-2009 |
| 20090238508 | SLIDE MEMBER AND BEARING UTILIZING THE SAME - A sliding member includes a silicon nitride sintered compact containing a rare earth element of 7 to 18 mass % in terms of oxide and at least one element M selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W of 0.1 to 3 mass % in terms of oxide, and having a total content of impurity positive ion elements of 0.3 mass % or less and a thermal conductivity of 60 W/m·K or higher. The silicon nitride sintered compact includes silicon nitride crystal grains and a grain boundary phase, and has a ratio of crystalline compound phases in the grain boundary phase of 20% or more in area ratio, and an average grain size of the crystalline compound phases of 0.5 μm or less. The sliding member is used, for example, as a bearing ball | 09-24-2009 |
| 20090154195 | WHITE LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, BACKLIGHT USING SAME, AND LIQUID CRYSTAL DISPLAY - A white light-emitting device | 06-18-2009 |
| 20090134020 | SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - There are provided a sputtering target and a process for producing a sputtering target. The sputtering target includes a first layer located on its side to be sputter treated and a second layer located on its side not to be sputter treated. The first and second layers are bonded to each other through a bonding interface between the first layer and the second layer. The sputtering target satisfying the following requirements X and Y:
| 05-28-2009 |
| 20090115936 | BACKLIGHT AND LIQUID CRYSTAL DISPLAY USING SAME - A backlight unit | 05-07-2009 |
| 20090097233 | LIGHT-EMITTING DEVICE, BACKLIGHT USING SAME, AND LIQUID CRYSTAL DISPLAY - A light-emitting device includes a semiconductor light-emitting element arranged on a substrate having internal wiring, a reflector arranged around the semiconductor light-emitting element, and a light-emitting portion, filled in the reflector, having a phosphor which emits visible light when excited by light from the semiconductor light-emitting element. Electrical conduction to the light-emitting element is obtained via the internal wiring of the substrate and the reflector. | 04-16-2009 |
| 20090090452 | PROCESS FOR PRODUCING NONFLAT CERAMIC SUBSTRATE - In the production of a ceramic substrate ( | 04-09-2009 |
| 20090078891 | RADIATION SHIELDING SHEET - A radiation shielding sheet formed by filling a shielding material into an organic polymer material. The shielding material is an oxide powder containing at least one element selected from the group consisting of lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu) and gadolinium (Gd). The oxide powder has an average grain size of 1 to 20 μm, and a volumetric ratio of the shielding material filled in the radiation shielding sheet is 40 to 80 vol. %. | 03-26-2009 |
| 20090075071 | HIGH THERMALLY CONDUCTIVE ALUMINUM NITRIDE SINTERED PRODUCT - The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (I | 03-19-2009 |
| 20090058358 | POWER RECEIVING DEVICE, AND ELECTRONIC APPARATUS AND NON-CONTACT CHARGER USING THE SAME - Disclosed is an electronic apparatus ( | 03-05-2009 |
| 20090057698 | LIGHT EMISSION DEVICE - A light emitting apparatus | 03-05-2009 |
| 20090056996 | ELECTRONIC COMPONENT MODULE - An electronic component module | 03-05-2009 |
| 20090051260 | SINTERED ELECTRODE FOR COLD CATHODE TUBE, AND COLD CATHODE TUBE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SINTERED ELECTRODE - This invention provides a sintered electrode for a cold cathode tube in a cylindrical form having a bottom part on one end and an opening part on the other end, characterized in that a lead-in wire is joined integrally to the bottom part and a requirement of d | 02-26-2009 |
| 20090050920 | CERAMIC WIRING BOARD AND PROCESS FOR PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE USING THE SAME - A ceramic wiring board | 02-26-2009 |
| 20090045905 | PLANAR MAGNETIC DEVICE AND POWER SUPPLY IC PACKAGE USING SAME - A planar magnetic device | 02-19-2009 |
| 20090038667 | THERMOELECTRIC CONVERSION MODULE AND HEAT EXCHANGER AND THERMOELECTRIC POWER GENERATOR USING IT - A thermoelectric conversion module ( | 02-12-2009 |
| 20080298408 | SUBSTRATE FOR OPTICAL SEMICONDUCTOR - A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au, and a protective layer provided on the solder layer and composed of Au or Ag having a thickness of 0.01 μm or more and 1 μm or less. The substrate for optical semiconductors as described above makes it possible to reduce stress placed on the optical semiconductor, to suppress development of crystal defects, and to prolong its life when joining the optical semiconductor easily developing crystal defects by slight stress or when in use thereafter. | 12-04-2008 |
| 20080283797 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME - Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu | 11-20-2008 |
| 20080251765 | FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE USING THE SAME - An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith. | 10-16-2008 |
| 20080250847 | DETECTOR AND PRODUCTION METHOD THEREOF - A detector for detecting a gaseous component in a gas is comprised of a sensor having a gas detecting region configured to output an electric signal in response to detection of the gaseous component and a contact portion configured to conduct the electric signal; an enclosure housing the sensor and having a through hole configured to introduce the gas to the gas detecting region; a wiring partly facing to the contact portion and being led out of the enclosure; an electric conductor interposed between the contact portion and the wiring; a packing member surrounding the through hole and so as to make a gap between the sensor and the enclosure impervious to the gas. | 10-16-2008 |
| 20080245656 | Sputtering Target and Process For Producing Si Oxide Film Therewith - A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I | 10-09-2008 |
