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TOPSIL SIMICONDUCTOR MATERIALS A/S

TOPSIL SIMICONDUCTOR MATERIALS A/S Patent applications
Patent application numberTitlePublished
20100107968METHOD AND APPARATUS FOR PRODUCING A SINGLE CRYSTAL - A method is disclosed for producing a single crystal comprising passing a polycrystalline rod through a heating region to create a molten zone, applying a magnetic field to the molten zone, and inducing growth of a single crystal upon solidification of the molten material on a single crystal seed. The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method.05-06-2010