| Tokyo Electron Limited Patent applications |
| Patent application number | Title | Published |
|---|
| 20120130529 | SUBSTRATE POSITION DETERMINING METHOD AND SUBSTRATE COLLECTING METHOD - Even in case that a wafer is so greatly deviated that a peripheral portion of the wafer cannot be detected, position determination of the wafer can be performed without inflicting a damage on the wafer. The wafer peripheral portion, which is a target, is detected based on output images from a plurality of imaging units disposed along a peripheral portion shape of the wafer (step S210), and a wafer position deviation correcting step (step S220) or a rough correcting step (step 230) is performed according to the number of the imaging units capable of detecting the wafer peripheral portion. In case that the wafer peripheral portion cannot be detected by all the imaging units, a wafer position adjusting step (step 240) for moving the wafer is performed in a position adjusting direction acquired by a combination of the output images by each imaging unit. | 05-24-2012 |
| 20120129354 | PROCESS FOR ETCHING SILICON WITH SELECTIVITY TO SILICON-GERMANIUM - A method for performing a selective etching process is described. The method includes preparing a substrate having a silicon layer (Si) and a silicon-germanium (SiGe | 05-24-2012 |
| 20120128942 | DOUBLE PATTERNING WITH INLINE CRITICAL DIMENSION SLIMMING - A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD. | 05-24-2012 |
| 20120128935 | SIDEWALL IMAGE TRANSFER PITCH DOUBLING AND INLINE CRITICAL DIMENSION SLIMMING - A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique. | 05-24-2012 |
| 20120128892 | SURFACE PROCESSING METHOD AND SURFACE PROCESSING APPARATUS - A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed. | 05-24-2012 |
| 20120126841 | PROBE APPARATUS AND METHOD FOR CORRECTING CONTACT POSITION - A probe apparatus includes a movable mounting table for supporting an object to be tested; a probe card disposed above the mounting table and having a plurality of probes to come into contact with electrodes of the object; a support body for supporting the probe card; and a control unit for controlling the mounting table. Electrical characteristics of the object are tested based on a signal from a tester by bringing the object and the probes into electrical contact with each other by overdriving the mounting table in a state where a test head is electrically connected with the probe card by a predetermined load. Further, one or more distance measuring devices for measuring a current overdriving amount of the mounting table are provided at one or more locations of the test head or the probe card. | 05-24-2012 |
| 20120126376 | SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×10 | 05-24-2012 |
| 20120125889 | CLUSTER BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, CLUSTER BEAM GENERATING METHOD, AND SUBSTRATE PROCESSING METHOD - A cluster beam generating apparatus that generates a cluster beam includes a mixer that mixes a gas source material and a liquid source material; a nozzle that supplies a cluster beam including clusters originating from the gas source material and the liquid source material that are mixed in the mixer; and a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam. | 05-24-2012 |
| 20120125765 | PLASMA PROCESSING APPARATUS AND PRINTED WIRING BOARD MANUFACTURING METHOD - It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films. | 05-24-2012 |
| 20120125376 | WET PROCESSING APPARATUS AND WET PROCESSING METHOD - A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate. | 05-24-2012 |
| 20120125368 | LIQUID PROCESSING METHOD, LIQUID PROCESSING APPARATUS AND STORAGE MEDIUM STORING PROGRAM FOR PERFORMING LIQUID PROCESSING METHOD - There are provided a liquid processing method and a liquid processing apparatus capable of removing a resist film without removing an underlying film when removing the resist film from a substrate on which the underlying film and the resist film are formed in sequence from the bottom and into which ions have been previously implanted. In the liquid processing method capable of processing a substrate by a processing solution, the method includes removing the resist film from the substrate by supplying the processing solution at a temperature of about 120° C. or higher to the substrate. The processing solution includes a sulfuric acid and a nitric acid at a preset ratio, and the substrate has thereon the underlying film and the resist film formed on the underlying film, and ions have been previously implanted into the substrate. | 05-24-2012 |
| 20120122289 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor. | 05-17-2012 |
| 20120119766 | PROBE APPARATUS AND METHOD FOR CORRECTING CONTACT POSITION - A probe apparatus includes a movable mounting table for supporting an object to be tested; a probe card disposed above the mounting table and having a plurality of probes to come into contact with electrodes of the object; a support body for supporting the probe card; and a control unit for controlling the mounting table. Electrical characteristics of the object are tested based on a signal from a tester by bringing the object and the probes into electrical contact with each other by overdriving the mounting table in a state where a test head is electrically connected with the probe card by a predetermined load. Further, one or more distance measuring devices for measuring a current overdriving amount of the mounting table are provided at one or more locations of the test head or the probe card. | 05-17-2012 |
| 20120118505 | PLASMA PROCESSING APPARATUS AND COOLING DEVICE FOR PLASMA PROCESSING APPARATUS - A coolant flow path for cooling a dielectric window of a side wall of a processing container of the plasma processing apparatus is provided. A coolant flows in a liquid or gaseous state in the coolant flow path without phase transition. At least a portion of the coolant flow path extending in a circumferential direction of the side wall has a cross-sectional area decreased toward downstream from upstream. | 05-17-2012 |
| 20120118504 | PROCESSING APPARATUS AND METHOD FOR OPERATING SAME - A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus. | 05-17-2012 |
| 20120118231 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM, AND SUBSTRATE PROCESSING APPARATUS - A method of processing a substrate by a substrate processing apparatus is disclosed. The substrate processing apparatus includes a processing container including a first space where a first processing gas or a second processing gas is supplied onto the substrate and a second space formed around the first space; a first exhaust unit configured to evacuate the first space; and a second exhaust unit configured to evacuate the second space. The method includes a first step of supplying the first processing gas into the first space; a second step of discharging the first processing gas from the first space; a third step of supplying the second processing gas into the first space; and a fourth step of discharging the second processing gas from the first space; wherein the pressure in the second space is adjusted by a pressure-adjusting gas supplied into the second space. | 05-17-2012 |
| 20120118229 | VACUUM PROCESSING APPARATUS AND ASSEMBLY METHOD THEREOF - The disclosure provides an assembly method of a vacuum processing apparatus having a reaction vessel and an exhaust port that are made of quartz and airtightly connected to each other, in order to prevent breakage of the vessel. The method includes (a) mounting an attachment member on one end portion of the reaction vessel, (b) connecting and fixing at least a flange portion of an exhaust pipe to the exhaust port, (c) fixing the attachment member to a portion of the exhaust pipe including at least the flange portion connected and fixed to the exhaust port by using fixing members after (a) and (b), (d) fixing the attachment member to a support portion after (a), and (e) fixing the exhaust pipe to an exhaust pipe fixing portion different from the attachment member at a lower position than a fixing position of the attachment member after completing (a) to (d). | 05-17-2012 |
| 20120116567 | SUBSTRATE TREATMENT APPARATUS, METHOD OF TRANSFERRING SUBSTRATE, AND NON-TRANSITORY COMPUTER STORAGE MEDIUM - A coating and developing treatment apparatus includes a substrate transfer mechanism; a defect inspection section; means for controlling transfer of a substrate; means for classifying a defect based on the state of the defect; means for storing a transfer route of the substrate by the substrate transfer mechanism when the substrate has been treated by treatment sections; and means for specifying, based on a kind of the defect classified by the defect classification means and the transfer route of the substrate stored in the storage means, a treatment section which is a cause of occurrence of the classified defect, and judging presence or absence of an abnormality of the specified treatment section, wherein the transfer control means controls the substrate transfer mechanism to transfer a substrate bypassing the treatment section which has been judged to be abnormal by the defective treatment specification means. | 05-10-2012 |
| 20120115400 | SURFACE TREATMENT METHOD, SHOWER HEAD, PROCESSING CONTAINER, AND PROCESSING APPARATUS USING THEM - The method of the present invention includes: a first blasting step of carrying out blasting of the surface of a metal base material, such as a shower head or a processing container, by using a blasting material composed of a non-sublimable material (e.g. alumina); and a second blasting step of carrying out blasting of the surface of the metal base material, which has undergone the first blasting step, by using a blasting material composed of a sublimable material (e.g. dry ice). The first blasting step properly roughens the surface of the metal base material so that a film, which adheres to the surface during film-forming processing, hardly peels off. In addition, the second blasting step almost fully removes the residual non-sublimable blasting material adhering to the surface of the metal base material, thereby preventing the generation of particles deriving from the residual non-sublimable blasting material falling off the metal base material. | 05-10-2012 |
| 20120115313 | SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND METHOD - A sealing member is lifted to cause its edge to be in contact with a contact surface of a support member. In the state where a precision ejection nozzle is isolated, a gas exhaust unit is operated to exhaust the inside of a chamber to reduce the pressure in the chamber to a predetermined level. Then, a purge gas is introduced into the chamber from a purge gas supply source through a gas introduction section to replace the atmosphere in the chamber with the purge gas, and the pressure in the chamber is returned to the atmospheric pressure. After that, the sealing member is lowered to release the isolation of the precision ejection nozzle. Then, liquid droplets of a liquid device material are ejected toward the surface of a substrate while a carriage is reciprocated in the X direction. | 05-10-2012 |
| 20120114869 | FILM FORMING METHOD - Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound. | 05-10-2012 |
| 20120111668 | VACUUM PROCESSING APPARATUS - A grease supply mechanism is provided inside a vacuum transfer chamber. The grease supply mechanism includes: a grease storage part in a bottomed cylindrical shape storing grease therein; and a movable cover covering an opening of the grease storage part and sliding while being in contact with an inner wall of the grease storage part. When the cover is pressed and moved, the grease is supplied into a grease inlet via a grease supply port. | 05-10-2012 |
| 20120111501 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a lower electrode which is provided in a process chamber and functions as a holding stage on which a substrate is placed; an upper electrode which functions as the shower head for introducing a gas and is vertically movable; a cover body which is provided over the upper electrode and hermetically closes an upper opening of the process chamber; an isolated space providing member which is provided to close a space between the upper electrode and the cover body, provides therein an isolated space isolated from a space outside the isolated space providing member, and includes therein an inlet/outlet through which a gas is introduced/exhausted, wherein a size of the isolated space varies as the upper electrode is vertically moved; and a gas introducing and exhausting mechanism which introduces/exhausts a gas into/from the isolated space of the isolated space providing member. | 05-10-2012 |
| 20120111500 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring. | 05-10-2012 |
| 20120111427 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, METHOD FOR CLEANING PLASMA PROCESSING APPARATUS AND PRESSURE CONTROL VALVE FOR PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path. | 05-10-2012 |
| 20120111373 | SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND STORAGE MEDIUM FOR SUBSTRATE CLEANING - A method for cleaning a surface of a substrate having a circuit pattern formed thereon, includes: forming a liquid film on the surface by feeding a cleaning solution onto the center of the surface while rotating the substrate with the substrate kept horizontal; forming a dry region by discharging gas to the center while moving a position of feed of the cleaning solution on the surface by a distance from the center toward the periphery of the substrate with the substrate being rotated; moving the position of feed of the cleaning solution on the surface toward the periphery at a speed equal to a speed at which the dry region is expanded toward the periphery while rotating the substrate; and controlling temperature of the cleaning solution to form the liquid film such that the temperature becomes higher than process atmosphere temperature on the surface during feed of the cleaning solution. | 05-10-2012 |
| 20120109582 | ABNORMALITY DETECTION SYSTEM, ABNORMALITY DETECTION METHOD, AND RECORDING MEDIUM - Disclosed is an abnormality detection system that accurately detects abnormalities that arise in a device. The abnormality detection system | 05-03-2012 |
| 20120108005 | METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM - A film-forming method includes a preprocessing step (step | 05-03-2012 |
| 20120107505 | METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM - There is provided a method for forming a Ge—Sb—Te film having a composition of Ge | 05-03-2012 |
| 20120103533 | BONDING APPARATUS AND BONDING METHOD - A bonding apparatus has an upper chuck and a lower chuck for holding wafers. The upper chuck is configured such that the center portion is bent to be convex when pressurized with a predetermined pressure. On the bottom surface of the lower chuck, there is an insulating ring formed of a combination of a plurality of insulating members to support the periphery of the lower chuck. The bottom surface of the insulating ring is supported by a support ring formed of a combination of a plurality of supporting members. The supporting members and the lower chuck are fixed by a bolt provided for each of the supporting members. The bolt is inserted through a through hole and a through hole which are formed in the insulating members and the supporting members, respectively, the through holes having a diameter larger than a diameter of the bolt. | 05-03-2012 |
| 20120103523 | PLASMA PROCESSING APPARATUS - The present disclosure provides a plasma processing apparatus capable of improving uniformity of a process on a substrate surface. The plasma processing apparatus performs a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber. The plasma processing apparatus includes a processing chamber main body having a top opening and formed in a container shape; an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging annular dielectric members and metal members, all having different diameters, and by airtightly sealing gaps between the dielectric members and the metal members; gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and a high frequency coil provided on an upper portion of the dielectric members and provided at the outside of the processing chamber. | 05-03-2012 |
| 20120103518 | FILM FORMATION APPARATUS - A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber. | 05-03-2012 |
| 20120103256 | VERTICAL HEAT TREATMENT APPARATUS - Provided is a vertical heat treatment apparatus which performs a film-forming process for substrates by supplying a film-forming gas to a plurality of substrates loaded onto a substrate supporter. The substrate supporter is rotated around an inclination axis, and the apparatus includes: a plurality of main holders which are provided at every reception position of the substrates in the substrate supporter and respectively supports the peripheries of the substrates at positions separated from each other in the circumferential direction; and first and second auxiliary holders which are located to be separated from the main holders in the circumferential direction and whose tops are lower than those of the main holders. Each substrate alternates between a position supported by the first auxiliary holder and the main holders and a position supported by the second auxiliary holder and the main holders every rotation of the substrate supporter. | 05-03-2012 |
| 20120101758 | METHOD OF ANALYZING CAUSE OF ABNORMALITY AND PROGRAM ANALYZING ABNORMALITY - A method of analyzing a cause of abnormality of a wafer processed by plasma in at least any one of two or more process modules disposed in a plasma processing system of a cluster type, the method includes recording information about transfer paths of the processing target from when the wafer is transferred from a shipping container and transferred to at least any one of the two or more process modules to when the processing target is returned to the shipping container, in relation with identification information of the wafer for each processing target; testing a state of the wafer after a plasma process has finished; and analyzing a cause of abnormality based on a result of comparison between recorded informations about transfer paths of the processing target determined to be abnormal and the processing target determined to be normal as a result of the testing. | 04-26-2012 |
| 20120100727 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR MANUFACTURING SAME, AND STORAGE MEDIUM - A method of manufacturing a semiconductor device includes steps of: generating positively or negatively charged fine bubbles having substantially zero buoyancy in a coating solution as an insulating film forming material; coating the coating solution including the bubbles on a substrate to form a coating film; and baking the coating film by heating the substrate before the bubbles are removed to obtain a porous low dielectric constant insulating film. | 04-26-2012 |
| 20120100725 | ADHESIVENESS OF FLUOROCARBON (CFX) FILM BY DOPING OF AMORPHOUS CARBON - A method of forming an amorphous carbon layer on an insulating layer includes the step of forming an amorphous carbon layer using a plasma reaction process. The amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a C | 04-26-2012 |
| 20120099951 | INSPECTION DEVICE, INSPECTION METHOD AND NON-TRANSITORY STORAGE MEDIUM FOR INSPECTING DEFORMATION OF SUBSTRATE HOLDING MEMBER, AND SUBSTRATE PROCESSING SYSTEM INCLUDING THE INSPECTION DEVICE - Disclosed is an inspection device for inspecting deformation of a substrate holding -member of a substrate transport apparatus. The substrate holding member is moved in the forward-and-backward direction relative to the transport base to pass across a light path of the detection light formed by an optical detection unit. The position, with respect to a direction transverse to the forward-and-backward direction, of the substrate holding member is detected based on a detection signal of the optical detection unit. Based on a correlation data expressing the relationship between a first parameter indicative of a change of a position of the substrate holding member with respect to the forward-and-backward direction and a second parameter indicative of the change of the position of the substrate holding member with respect to the direction transverse to the forward-and-backward direction, whether or not deformation occurs in the substrate holding member is judged. | 04-26-2012 |
| 20120098405 | Method and system for introducing process fluid through a chamber component - A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid. | 04-26-2012 |
| 20120098147 | PLASMA TREATMENT METHOD - A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx | 04-26-2012 |
| 20120097336 | TEMPLATE TREATMENT APPARATUS AND IMPRINT SYSTEM - The present invention is a template treatment apparatus forming a film of a release agent on a template having a transfer pattern formed on a front surface thereof, the template treatment apparatus including: a treatment station forming a film of a release agent on the front surface of the template; and a template carry-in/out station capable of keeping a plurality of the templates, and carrying the template into/out of the treatment station, wherein the treatment station includes: a cleaning unit cleaning the front surface of the template; a coating unit applying a release agent to the cleaned front surface of the template; a heating unit baking the applied release agent; and a carry unit carrying the template to the cleaning unit, the coating unit, and the heating unit. | 04-26-2012 |
| 20120095586 | USING VACUUM ULTRA-VIOLET (VUV) DATA IN MICROWAVE SOURCES - The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models. | 04-19-2012 |
| 20120094505 | METHOD FOR SELECTIVE OXIDATION, DEVICE FOR SELECTIVE OXIDATION, AND COMPUTER-READABLE MEMORY MEDIUM - A selective oxidation treatment method in which plasma of a hydrogen gas and an oxygen containing gas is allowed to act on an object to be treated, and in which silicon and a metallic material are exposed in the surface, within a treatment container of a plasma treatment apparatus comprises: after the supply of the hydrogen gas from a hydrogen gas supply source is initiated by using a first inert gas, which passes through a first supply path, as a carrier gas, initiating the supply of the oxygen containing gas from an oxygen containing gas supply source by using a second inert gas, which passes through a second supply path, as a carrier gas before the plasma is ignited; igniting the plasma of a treatment gas including the oxygen containing gas and the hydrogen gas within the treatment container; and selectively oxidizing the silicon by the plasma. | 04-19-2012 |
| 20120094495 | SUBSTRATE PROCESSING METHOD - A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening. | 04-19-2012 |
| 20120094483 | FILM FORMING METHOD, FILM FORMING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH | 04-19-2012 |
| 20120094014 | VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD - There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit. | 04-19-2012 |
| 20120091588 | BARRIER LAYER, FILM FORMING METHOD, AND PROCESSING SYSTEM - There is provided a film forming method for forming a film on a target object having thereon an insulating layer | 04-19-2012 |
| 20120091187 | BONDING APPARATUS AND BONDING METHOD - A bonding apparatus includes a thermal treating unit and a bonding unit that are integrally bonded together. The thermal treating unit includes a first thermal treating plate for supporting and thermally processing a superimposed substrate. The bonding unit includes a second thermal treating plate for supporting and thermally processing the superimposed substrate processed in thermal treating unit, and a pressing mechanism for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate includes a cooling mechanism for cooling the superimposed substrate placed on the first heating plate. Each unit can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms for conveying the wafers between the two units. | 04-19-2012 |
| 20120091186 | BONDING APPARATUS - A bonding apparatus for bonding substrates having metal bonding portions, includes: a processing container having an opening formed on the bottom of the processing container; a thermal treating plate disposed within the processing container, the thermal treating plate allowing for substrates to be mounted thereon and allowing for thermal treatment of the substrates; a pressing mechanism disposed within the processing container opposite the thermal treating plate and which presses the substrates to the thermal treating plate; an annular supporter which is disposed in an inner side of the processing container along the opening of the processing container, the annular supporter providing an airtight seal between the processing container and the thermal treating plate, and supporting the thermal treating plate; and a cooling mechanism which is disposed in an inner side of the supporter below the thermal treating plate, the cooling mechanism cooling the thermal treating plate. | 04-19-2012 |
| 20120091097 | Using Vacuum Ultra-Violet (VUV) Data in Radio Frequency (RF) Sources - The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models. | 04-19-2012 |
| 20120090783 | PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF - There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes. | 04-19-2012 |
| 20120090782 | MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS - There are provided a microwave plasma source and a plasma processing apparatus capable of improving uniformity of a plasma density distribution within a processing chamber by controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed. The microwave plasma source | 04-19-2012 |
| 20120088030 | FILM FORMING APPARATUS, FILM FORMING METHOD, AND RECORDING MEDIUM - A film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas a vacuum ejecting mechanism; and a rotary mechanism rotating the loading table relative to the reaction gas supplying units and the separating areas. | 04-12-2012 |
| 20120087766 | TRANSFER MODULE - There is provided a transfer module capable of enhancing strength of a transfer chamber. An openable/closable cover is provided at the transfer chamber configured to be evacuable to vacuum. A robot is provided in the transfer chamber. The robot has hollow rotation shafts at a part of a device for transferring a processing target object W. A pillar for supporting the cover in a closed state is positioned within the hollow rotation shafts of the robot. Since the pillar supports a load applied to the cover by an atmospheric pressure, a thickness of the cover can be reduced, so that manufacturing cost can be reduced. Further, the robot is not interfered by the pillar when the robot rotates the processing target object W about the rotation shafts or moves the processing target object W in a radial direction. | 04-12-2012 |
| 20120086142 | IMPRINT SYSTEM, IMPRINT METHOD, AND NON-TRANSITORY COMPUTER STORAGE MEDIUM - The present invention is a system including: an imprint unit transferring a transfer pattern to a coating film on a substrate using a template to form a predetermined pattern in the coating film; a treatment station connected to the imprint unit and performing a predetermined treatment on the template; a template carry-in/out station connected to the treatment station, capable of keeping templates, and carrying the template in/out from/to the treatment station; a carry line provided through the imprint unit and carrying the template between the imprint unit and the treatment station; and a substrate carry-in/out station connected to the imprint unit, capable of keeping substrates, and carrying the substrate in/out from/to the imprint unit. | 04-12-2012 |
| 20120084059 | DATA ACQUISITION METHOD OF SUBSTRATE TREATMENT APPARATUS AND SENSOR SUBSTRATE - The present invention holds a sensor substrate including a sensor part for collecting information about a module and a power receiving coil for supplying power to the sensor part, on a holding member; moves the holding member forward to deliver the sensor substrate to the module; supplies power to a power transmitting coil provided at a base of the holding member to form a magnetic field, and causes the power transmitting coil and the power receiving coil to resonate in the magnetic field to supply power from the power transmitting coil to the power receiving coil; and acquires data about the module by the sensor part. | 04-05-2012 |
| 20120084045 | TEMPERATURE MEASURING METHOD, STORAGE MEDIUM, AND PROGRAM - Provided is a temperature measuring method which can accurately measure a temperature of an object to be measured compared to a conventional method, even if a thin film is formed on the object. The temperature measuring method includes: transmitting a light from a light source to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film based on an intensity of the second interference wave; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length, based on the calculated film thickness of the thin film; compensating for the optical path length from the first interference wave to the second interference wave based on the calculated optical path difference; and calculating a temperature of the object at the measurement point based on the compensated optical path length. | 04-05-2012 |
| 20120084026 | METHOD AND SYSTEM FOR CHARACTERIZING A PLASMA - Disclosed are a method and system for measuring the electron energy distribution function (EEDF) in a plasma which has a pronounced drifting Maxwellian component of the EEDF. The method comprises fitting an acquired unfiltered electron current vs. bias voltage curve to a functional form which assumes an EEDF comprising at least one stationary Maxwellian component and at least one drifting Maxwellian component. The method and system allow more accurate characterization of plasmas with electron components with pronounced drift, such as plasmas in microwave surface wave plasma (SWP) sources. | 04-05-2012 |
| 20120083127 | METHOD FOR FORMING A PATTERN AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for forming a fine pattern on a substrate includes providing a substrate including a material with an initial pattern formed thereon and having a first line width, performing a self-limiting oxidation and/or nitridation process on a surface of the material and thereby forming an oxide, a nitride, or an oxynitride film on a surface of the initial pattern, and removing the oxide, nitride, or oxynitride film. The method further includes repeating the formation and removal of the oxide, nitride, or oxynitride film to form a second pattern having a second line width that is smaller than the first line width of the initial pattern. The patterned material can contain silicon, a silicon-containing material, a metal, or a metal-nitride, and the self-limiting oxidation process can include exposure to vapor phase ozone, atomic oxygen generated by non-ionizing electromagnetic (EM) radiation, atomic nitrogen generated by ionizing or non-ionizing EM radiation, or a combination thereof. | 04-05-2012 |
| 20120077347 | Selective etch process for silicon nitride - A method for selectively etching a substrate is described. The method includes preparing a substrate comprising a silicon nitride layer overlying a silicon-containing contact region, and patterning the silicon nitride layer to expose the silicon-containing contact region using a plasma etching process in a plasma etching system. The plasma etching process uses a process composition having as incipient ingredients a process gas containing C, H and F, and a non-oxygen-containing additive gas, wherein the non-oxygen-containing additive gas includes H, or C, or both H and C, and excludes a halogen atom. | 03-29-2012 |
| 20120077322 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD - To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm | 03-29-2012 |
| 20120075460 | SUBSTRATE POSITION DETECTION APPARATUS, FILM DEPOSITION APPARATUS EQUIPPED WITH THE SAME, AND SUBSTRATE POSITION DETECTION METHOD - A substrate position detection method includes rotating the susceptor so that the substrate receiving portion is moved into an image taking area of a imaging apparatus; detecting first two position detection marks provided in the process chamber so that the first two position detection marks are within the image taking area, wherein a first perpendicular bisector of the first two position detection marks passes through a rotational center of the susceptor; detecting second two position detection marks provided in the susceptor so that the second two position detection marks can be within the image taking area, wherein a second perpendicular bisector of the second two position detection marks passes through the rotational center of the susceptor and a center of the substrate receiving portion; and determining whether the substrate receiving portion is positioned in a predetermined range in accordance with the detected first two and second two position detection marks. | 03-29-2012 |
| 20120074339 | REGULATING VALVE DEVICE - [Problem] To provide a regulating valve device having a valve element opened or closed by a working fluid. | 03-29-2012 |
| 20120074100 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuits | 03-29-2012 |
| 20120073781 | TEMPERATURE CONTROL SYSTEM - The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit. | 03-29-2012 |
| 20120073757 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including a processing chamber having a dielectric window; a substrate holding unit for holding thereon a processing target substrate within the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the substrate; a RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; and a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas. Here, the RF antenna includes a plurality of coil segments that are arranged along a loop having a preset shape and a preset size while electrically connected in parallel to each other. | 03-29-2012 |
| 20120073756 | PLASMA PROCESSING APPARATUS - There is provided an inductively coupled plasma etching apparatus capable of suppressing a wavelength effect within a RF antenna and performing a plasma process uniformly in both a circumferential and a radial direction. In the plasma etching apparatus, a RF antenna | 03-29-2012 |
| 20120073755 | ELECTRODE AND PLASMA PROCESSING APPARATUS - Electric field intensity distribution of a high frequency power for plasma generation can be controlled without generating abnormal electric discharge. There is provided an electrode for a plasma processing apparatus capable of supplying a gas. The electrode may include a base member | 03-29-2012 |
| 20120073753 | ELECTRODE PLATE FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS - An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region. | 03-29-2012 |
| 20120072010 | TRANSFER DEVICE, PROCESSING SYSTEM, CONTROL METHOD OF TRANSFER DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM - A transfer device for transferring a transfer target object includes a support member, which is movable forward and backward, for supporting the transfer target object, and a sensor for detecting that a tip of the support member comes into contact with an obstacle when the support member moves forward. The sensor includes a first conductive ring having flexibility, which is provided at the tip of the support member in a grounded state, a second conductive ring provided inside the first conductive ring and separated from the first conductive ring, and a detector which detects that the first conductive ring and the second conductive ring are short-circuited when the first conductive ring comes into contact with the second conductive ring by being deformed due to a contact with the obstacle. | 03-22-2012 |
| 20120072005 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PLACING POSITION ADJUSTING METHOD AND STORAGE MEDIUM - A substrate placing position adjusting method which acquires data on a substrate placing position where a substrate carrying unit is required to place a substrate on a substrate holding device capable of rotating about a vertical axis and included in a processing unit for processing a substrate substantially horizontally held by the substrate holding device, said substrate placing position adjusting method comprising the steps of: transferring a jig from the substrate carrying unit to the substrate holding device; measuring centrifugal acceleration imparted to a measuring position in the jig when the substrate holding device holding the jig is rotated at a fixed angular velocity; and calculating an eccentricity of the measuring position from a rotation center of the substrate holding device on the basis of a centrifugal acceleration. | 03-22-2012 |
| 20120071005 | HEAT TREATING APPARATUS, HEAT TREATING METHOD AND STORAGE MEDIUM - A heat treating apparatus, which performs a specified heat treatment on a target object, includes a processing chamber accommodating therein the target object; a mounting table for mounting thereon the target object; a vacuum exhaust system for vacuum evacuating the processing chamber; an electromagnetic wave supply unit for irradiating an electromagnetic wave onto the target object to heat the target object; and a controller for controlling the heat treating apparatus such that the electromagnetic wave is irradiated onto the target object at a high vacuum level at which plasma is not generated. Further, a heat treating method performs a specified heat treatment on a target object, wherein the target object is accommodated in a processing chamber capable of being vacuum evacuated, and the target object is heated by irradiating an electromagnetic wave thereon at a high vacuum level at which plasma is not generated in the processing chamber. | 03-22-2012 |
| 20120070621 | CONDUCTIVE FILM FORMING METHOD, CONDUCTIVE FILM FORMING APPARATUS AND CONDUCTIVE FILM - There is provided a conductive film forming method including disposing a material | 03-22-2012 |
| 20120070564 | Bake Plate Exhaust Monitor - An Exhaust Gas Analyzer (EGA) subsystem for monitoring exhaust gasses, for controlling and rapidly adjusting the processing conditions within a processing chamber in a thermal processing unit used for heating-treating wafers before and/or during Post Application Bake (PAB) procedures. The EGA subsystem can be used to control and/or optimize the heat-treating of coated wafers at different bake plate temperatures, and the EGA subsystem can provide a high wafer throughput. | 03-22-2012 |
| 20120068603 | PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots. | 03-22-2012 |
| 20120067866 | THERMALLY ZONED SUBSTRATE HOLDER ASSEMBLY - A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber). | 03-22-2012 |
| 20120067845 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion | 03-22-2012 |
| 20120067523 | TUNER AND MICROWAVE PLASMA SOURCE - A tuner matching an impedance of a load in the chamber to a characteristic impedance of the microwave power source is provided. The tuner includes: a body having a tubular outer conductor and a tubular inner conductor coaxially provided in the outer conductor, the body forming a part of the microwave transmission path; an annular dielectric slug provided between the outer conductor and the inner conductor, the slug being movable along a longitudinal direction of the inner conductor; and a drive mechanism for moving the slug and including a drive part for applying a driving force; a drive transmission part for transmitting the driving force to the slug; a drive guide part for guiding movement of the slug; and a holding part for holding the slug at the drive transmission part. The drive transmission part, the drive guide part and the holding part are accommodated in the inner conductor. | 03-22-2012 |
| 20120064726 | PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber | 03-15-2012 |
| 20120064717 | METHOD FOR FORMING CVD-RU FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES - In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere. | 03-15-2012 |
| 20120064713 | Ultra-low-k dual damascene structure and method of fabricating - A method of patterning an insulation layer is described. The method includes preparing a feature pattern in an insulation layer using at least one hard mask layer formed on the insulation layer, where the insulation layer contains a low-k material having a dielectric constant less than the dielectric constant of SiO | 03-15-2012 |
| 20120064708 | FILM FORMING METHOD, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND SUBSTRATE PROCESSING APPARATUS THEREFOR - In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate. | 03-15-2012 |
| 20120064472 | VERTICAL-TYPE HEAT TREATMENT APPARATUS - A heat treatment apparatus and control method enabling the apparatus to settle down an internal temperature of a treating vessel to a target temperature accurately and quickly. The heat treatment apparatus includes a furnace body with a heater on an inner circumferential surface thereof, the treating vessel disposed inside the furnace body, a cooling medium supply blower and cooling medium release blower each connected to the furnace body, and a temperature sensor provided inside the treating vessel. A signal from the temperature sensor is sent to a heater output computing unit and blower output computing unit included in a controller. The heater output computing unit determines a heater output level based on a heater output numerical model and the signal from the temperature sensor. The blower output computing unit determines a blower output level based on a blower output numerical model and the signal from the temperature sensor. | 03-15-2012 |
| 20120064469 | VERTICAL-TYPE HEAT TREATMENT APPARATUS, AND CONTROL METHOD FOR SAME - A heat treatment apparatus and control method enabling the apparatus to settle down the internal temperature of a treating vessel to a target temperature accurately and quickly. The apparatus includes a furnace body with a heater on an inner circumferential surface thereof, a treating vessel disposed inside the furnace body, a cooling medium supply blower and cooling medium release blower connected to the furnace body, and a temperature sensor provided inside the treating vessel. A signal from the temperature sensor is sent to a heater output computing unit of a controller. The computing unit determines a heater output level to be obtained during temperature regulation with the heater only, the heater output level being based on a preset temperature that has been determined by a temperature determining unit and temperature detected by the temperature sensor. A blower output computing unit activates blower output based on the heater output level. | 03-15-2012 |
| 20120064259 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion. | 03-15-2012 |
| 20120064248 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate. | 03-15-2012 |
| 20120064247 | METHOD FOR FORMING CU FILM, AND STORAGE MEDIUM - A film-forming source material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and initial nuclei of Cu are formed on the wafer. Then, the film-forming source material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nuclei of Cu formed thereon. | 03-15-2012 |
| 20120063765 | COATING AND DEVELOPING APPARATUS, COATING AND DEVELOPING METHOD AND NON-TRANSITORY TANGIBLE MEDIUM - A process block including a group of liquid-process related unit blocks, a first heating-process related block arranged on a carrier block side of the group of unit blocks, and a second heating-process related block arranged on an interface block side of the group of unit blocks. The group of liquid-process unit blocks includes doubled unit blocks for preprocessing for forming an antireflection film and a resist film, doubled unit blocks for post-processing for forming an upper layer film and performing a cleaning operation before exposure, and a unit block for developing. The first heating-process related block heats a substrate coated with a resist liquid and a substrate that has been developed. The second heating-process related block heats a substrate that has been exposed but is not yet developed, a substrate on which an antireflection film has been formed and a substrate on which an upper layer film has been formed. | 03-15-2012 |
| 20120063486 | TEMPERATURE MEASURING APPARATUS AND TEMPERATURE MEASURING METHOD - The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit. | 03-15-2012 |
| 20120062870 | PHYSICAL STATE MEASURING APPARATUS AND PHYSICAL STATE MEASURING METHOD - The physical state measuring apparatus includes: a light source; a transmitting unit which transmits a light from the light source to a measurement point of an object to be measured; a nonlinear optical device which changes a wavelength of the light reflected by the measurement point to a wavelength that is different from the wavelength before the changing; a light receiving unit which receives the light whose wavelength has been changed; and a measuring unit which measures a physical state of the object to be measured at the measurement point based on a waveform of the light received by the light receiving unit. | 03-15-2012 |
| 20120062259 | WAFER INSPECTION APPARATUS AND METHOD FOR PRE-HEATING PROBE CARD - A wafer inspection apparatus includes a first and second wafer transfer mechanisms, an alignment chamber, a second wafer transfer mechanism and a plurality of inspection chambers. The first wafer transfer mechanism is installed at a first transfer area to transfer wafers individually from a housing. The alignment chamber has an alignment mechanism configured to align the wafer at an inspection position for an electrical characteristics inspection. The second wafer transfer mechanism is configured to transfer the wafer through a wafer retaining support in a second transfer area formed along the first transfer area and an alignment area. The plurality of inspection chambers is arranged at an inspection area formed along the second transfer area and is configured to inspect electrical characteristics of the wafer transferred by the second wafer transfer mechanism through the wafer retaining support. | 03-15-2012 |
| 20120062258 | WAFER INSPECTION INTERFACE AND WAFER INSPECTION APPARATUS - A wafer inspection interface IF comprises a probe card, an adsorption unit configured to adsorb a wafer to the probe card, a wafer adsorption sealing member to which the probe card is adsorbed, and a fixing ring configured to fix the wafer adsorption sealing member to a card holder. The adsorption unit includes an air exhaustion unit, a first air duct whose right end portion is opened in the hermetically closed space and the left end portion is opened at a side of the fixing ring, a second air duct whose right end portion is opened to face an opening of the left end portion of the first air duct and the left end portion is opened to be connected with the air exhaustion unit, and a hole by which the first air duct is in communication with the second air duct. | 03-15-2012 |
| 20120061384 | MICROWAVE IRRADIATION DEVICE AND MICROWAVE IRRADIATION METHOD - A microwave irradiation device includes a chamber for accommodating an object to be processed; a plurality of magnetrons for generating microwaves and irradiating the microwaves to the object to be processed in the chamber; and a power supply unit for supplying a pulse-shaped voltage to each magnetron. The power supply unit supplies the pulse-shaped voltage to the magnetrons while preventing temporal overlap of voltage pulses of the pulse-shaped voltage supplied to the respective magnetrons with each other. | 03-15-2012 |
| 20120061351 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD - There is provided a plasma processing apparatus including a susceptor | 03-15-2012 |
| 20120061021 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND COMPUTER-READABLE STORAGE MEDIUM - In the present invention, a plurality of rounds of patterning are performed on a substrate. In a patterning system, the substrate on which a first round of patterning has been performed is transferred to a planarizing film forming unit, where a planarizing film is formed above the substrate. The substrate is then transferred to the patterning system and subjected to a second round of patterning. The time from the completion of the forming processing of the planarizing film to the start of the second round of patterning is managed to be constant among the substrates. According to the present invention, in the pattern forming processing of performing a plurality of rounds of patterning, a pattern with a desired dimension can be stably formed above the substrate. | 03-15-2012 |
| 20120059502 | SUBSTRATE TRANSFER METHOD AND STORAGE MEDIUM - There is provided a substrate transfer method capable of preventing fine particles from adhering to a wafer. A substrate processing system | 03-08-2012 |
| 20120057862 | COATING AND DEVELOPING APPARATUS, COATING AND DEVELOPING METHOD AND NON-TRANSITORY TANGIBLE MEDIUM - A process block is formed by arranging a heating-process related block on the side of a carrier block, a group of liquid-process related unit blocks, and a heating block on the side of an interface block, in this order from the side of the carrier block to the side of the interface block. The group of liquid-process related unit blocks is composed of: a group of unit blocks for coating films that is formed by stacking upward a unit block for an antireflection film, a unit block for a resist film, and a unit bock for an upper layer film, in this order; and unit blocks for developing that are stacked on one another in the up and down direction with respect to the group of unit blocks for coating films. Liquid process modules of each of the liquid-process related unit blocks are arranged on the right and left sides of a transfer path for a substrate. | 03-08-2012 |
| 20120057861 | COATING AND DEVELOPING APPARATUS AND METHOD, AND STORAGE MEDIUM - In one embodiment, a coating and developing apparatus is provided with a processing block including a liquid processing block disposed on the carrier block side and a heating processing block disposed on the interface block side. The liquid processing block includes a first unit block, a second unit block, and one or more of developing unit blocks overlying or underlying a stack of the first unit block and the second unit block. The first unit block includes antireflection film-forming modules and resist film-forming modules disposed on both sides of the transport passage thereof. The second unit block includes upper film-forming modules and hardening modules disposed on both sides of the transport passage thereof. | 03-08-2012 |
| 20120055506 | SUBSTRATE CLEANING METHOD - In a substrate cleaning method for cleaning a substrate with fine patterns having grooves or holes whose representative length is 0.1 mm or less, the substrate is arranged in a space which contains water, such that the substrate faces an acute-angled leading end of a discharge electrode which can be cooled, with a predetermined interval therebetween, with a counter electrode being interposed at a predetermined position between the substrate and the discharge electrode. Then, a predetermined voltage is applied between the discharge electrode and the counter electrode while generating dew condensation in the discharge electrode by cooling the discharge electrode. The substrate is cleaned by generating an aerosol containing water particles having sizes of equal to less than 10 nm in the leading end of the discharge electrode and spraying the aerosol on the substrate. | 03-08-2012 |
| 20120055403 | MOUNTING TABLE STRUCTURE, FILM FORMING APPARATUS AND RAW MATERIAL RECOVERY METHOD - Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas. | 03-08-2012 |
| 20120055402 | PROCESSING APPARATUS - A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit. | 03-08-2012 |
| 20120055401 | SUBSTRATE PROCESSING METHOD AND SYSTEM - A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine. | 03-08-2012 |
| 20120046904 | SUBSTRATE CARRYING MECHANISM, SUBSTRATE CARRYING METHOD AND RECORDING MEDIUM STORING PROGRAM INCLUDING SET OF INSTRUCTIONS TO BE EXECUTED TO ACCOMPLISH THE SUBSTRATE CARRYING METHOD - A substrate carrying mechanism includes: a base; a substrate holding member placed on the base and capable of holding a substrate and of being advanced and retracted relative to the base; four or more detecting units respectively for detecting different parts of the edge of a substrate held by the substrate holding member when the substrate holding member holding a substrate is retracted; and a controller that determines whether or not a notch formed in the edge of the substrate has been detected by one of the detecting units, on the basis of measurements measured by the four or more detecting units and corrects an error in a transfer position where the substrate is to be transferred to the succeeding processing unit on the basis of measurements measured by the detecting units excluding the one detecting unit that has detected the notch of the substrate. | 02-23-2012 |
| 20120046774 | SUBSTRATE PROCESSING APPARATUS, CONTROL METHOD ADOPTED IN SUBSTRATE PROCESSING APPARATUS AND PROGRAM - A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means. In this substrate processing apparatus, switch-over control is executed to select either the scrubbing common discharge system of the non-scrubbing common discharge system in correspondence to the type of processing executed in the processing chamber. | 02-23-2012 |
| 20120045721 | METHOD FOR FORMING A SELF-ALIGNED DOUBLE PATTERN - The invention can provide a method of processing a substrate using Double-Patterned-Shadow (D-P-S) processing sequences that can include (D-P-S) creation procedures, (D-P-S) evaluation procedures, and (D-P-S) transfer sequences. The (D-P-S) creation procedures can include deposition procedures, activation procedures, de-protecting procedures, sidewall angle (SWA) correction procedure, and Double Patterned (DP) developing procedures. | 02-23-2012 |
| 20120043062 | METHOD FOR COOLING OBJECT TO BE PROCESSED, AND APPARATUS FOR PROCESSING OBJECT TO BE PROCESSED - Provided is a method for cooling an object to be processed. The cooling method is provided with a step of placing the object in a heated state on a stage, and a step of cooling the object by blowing a cooling gas to a region the near-center region of the object placed on the stage, including the center thereof. | 02-23-2012 |
| 20120043024 | SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD - There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water. | 02-23-2012 |
| 20120040085 | METHOD FOR FORMING Cu FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a wafer (W) is loaded into a chamber | 02-16-2012 |
| 20120037613 | ELEMENT WIRE CONTACT PREVENTION MEMBER AND METHOD FOR MAINTENANCE OF HEATER DEVICE - An insulative element wire contact prevention member is installed in a heater device having heater element wires spirally wound around the circumference of an object to be heated. The element wire contact prevention member is interposed between the heater element wires in a portion at which a gap between the heater element wires becomes narrower than that at the time of arrangement of the heater element wires due to deformation of the heater element wires. | 02-16-2012 |
| 20120037597 | PLASMA PROCESSING APPARATUS AND PLASMA CONTROL METHOD - There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber | 02-16-2012 |
| 20120037592 | Method for high aspect ratio patterning in a spin-on layer - A method of patterning a substrate is described. The method includes preparing a film stack on a substrate, wherein the film stack comprises a spin-on layer, and heating the spin-on layer to a cure temperature less than a thermal decomposition temperature of the spin-on layer and exceeding about 200 degrees C. to increase mechanical strength of the spin-on layer. The method further includes forming a feature pattern without pattern collapse in the spin-on layer, wherein the feature pattern is characterized by a critical dimension less than 35 nm (nanometers) and an aspect ratio relating a height of the feature pattern to the critical dimension exceeding 5:1. | 02-16-2012 |
| 20120037316 | METHOD OF SUPPLYING ETCHING GAS AND ETCHING APPARATUS - A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container. | 02-16-2012 |
| 20120037314 | SUBSTRATE PROCESSING APPARATUS AND SIDE WALL COMPONENT - A substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material. | 02-16-2012 |
| 20120034793 | METHOD FOR FORMING METAL NITRIDE FILM - A wafer serving as a target substrate to be processed is loaded into a chamber, and an inside of the chamber is maintained under a vacuum level. Then, a TiN film is formed on the wafer by alternately supplying TiCl | 02-09-2012 |
| 20120034792 | COATING TREATMENT METHOD - The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a first number of rotations. The substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, consumption of the resist solution can be suppressed and a high in-plane uniformity can be obtained for the film thickness of the resist film. | 02-09-2012 |
| 20120034566 | MICRO-CHANNEL DEVICE AND METHOD FOR FABRICATING MICRO-CHANNEL DEVICE - A micro-channel device provided in a solution analysis system using pressure liquid feed comprises a plurality of straight-line channels and curved channels connecting the ends of the neighboring straight-line channels. The width w of each curved channel is smaller than the width t of each straight-line channel. The radius of curvature r of each curved channel is set so that the value of a expressed by formula (1) is equal to or smaller than the value of a at a local maximum point of the theoretical step height H expressed by formula (2) and based on the shape of the curved channel. | 02-09-2012 |
| 20120034557 | Method for preparing alignment mark for multiple patterning - A method for image pattern recognition in a multi-image patterning scheme is described. The method includes forming a first feature pattern on a substrate using a lithographic process, and forming a second feature pattern on the substrate using the lithographic process. The method further includes forming an inspection alignment mark on the substrate to distinguish the first feature pattern from the second feature pattern. The inspection alignment mark comprises a negative tone pattern having a first alignment structure aligned with at least a portion of the first feature pattern and a second alignment structure aligned with at least a portion of the second feature pattern, wherein the first alignment structure is independent from the second alignment structure. | 02-09-2012 |
| 20120034369 | VAPORIZING APPARATUS, SUBSTRATE PROCESSING APPARATUS, COATING AND DEVELOPING APPARATUS, AND SUBSTRATE PROCESSING METHOD - A vaporizing apparatus includes a heating plate disposed in a container to heat and vaporize a liquid chemical, a gas supply unit configured to supply a carrier gas carrying the chemical vaporized by the heating plate, into the container, a first detecting unit configured to detect the supply of the carrier gas into the container, and a second detecting unit configured to detect the vaporization of the liquid chemical by the heating plate. | 02-09-2012 |
| 20120031889 | MOUNTING TABLE STRUCTURE AND PROCESSING APPARATUS - Provided is a mounting table structure on which a target object is mounted to perform a heat treatment on the target object in a processing chamber and which heats the mounted target object. Outermost peripheral feed lines are connected to a plurality of positions different in the circumferential direction of an outermost peripheral resistance heating heater for heating an outermost peripheral heating zone of a mounting table body, thereby dividing the outermost peripheral resistance heating heater into a plurality of heater sections. A heater control unit can individually control electrical states (for example, voltage application states, zero potential states, and floating states) of the respective outermost peripheral feed lines. The power supply state of each of the heater sections can be changed by a simple configuration. | 02-09-2012 |
| 20120031875 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method includes: etching an anti reflection coating film with plasma generated from an etching gas by using a resist film that is patterned as a mask, in a deposited film in which an Si-ARC film constituting the anti reflection coating film is formed on a layer to be etched and the ArF resist film is formed on the anti reflection coating film; and modifying the ArF resist film with plasma generated from a modifying gas including a CF | 02-09-2012 |
| 20120031563 | PLASMA PROCESSING DEVICE - An inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container; an antenna-placing section provided between an inner surface and an outer surface of a wall of the vacuum container; a radio-frequency antenna placed in the antenna-placing section, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member separating the antenna-placing section and an internal space of the vacuum container, wherein the radio-frequency antenna has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves. | 02-09-2012 |
| 20120031560 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: an evacuable chamber | 02-09-2012 |
| 20120031434 | SUBSTRATE CLEANING METHOD - There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate. | 02-09-2012 |
| 20120031339 | DEPOSITION HEAD AND FILM FORMING APPARATUS - There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing. | 02-09-2012 |
| 20120031334 | GAS EXHAUST SYSTEM OF FILM-FORMING APPARATUS, FILM-FORMING APPARATUS, AND METHOD FOR PROCESSING EXHAUST GAS - A film-forming apparatus includes a processing chamber, and TiCl | 02-09-2012 |
| 20120031266 | EXHAUSTING METHOD AND GAS PROCESSING APPARATUS - An exhausting method includes determining an exhaust flow rate of a process gas to be a predetermined value that is less than or equal to a gas flow rate corresponding to a maximum process capability of a purification system when the process gas is diluted to a lower explosive limit; calculating a pressure drop amount per unit time to maintain the determined exhaust flow rate of the process gas, based on a relation between the exhaust flow rate and the pressure drop amount per unit time; and evacuating an inside of the chamber to maintain the determined exhaust flow rate, while controlling the pressure through an automatic pressure control valve by setting a target pressure value to be updated as a control value of the automatic pressure control valve at every predetermined time interval so as to achieve a calculated pressure drop amount per unit time. | 02-09-2012 |
| 20120029863 | PARTICLE DISTRIBUTION ANALYSIS METHOD FOR COMPUTER READABLE STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD - There is provided a support method for a particle distribution analysis for a substrate. In the support method, histogram data of inter-particle distances are created for all particles on a target substrate subjected to the particle distribution analysis from particle coordinate data of the target substrate. Further, histogram data of inter-particle distances are created for multiple virtual substrates each having the same number of randomly distributed particles as the particles on the target substrate. Based on a difference between the histogram data of the target substrate and the histogram data of each of the virtual substrates, determination data are created by quantifying a distance between the histogram data of the target substrate and the histogram data of the multiple virtual substrates, and the determination data are displayed on a display unit. | 02-02-2012 |
| 20120028471 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall of the second pattern of the photoresist layer; and etching the thin film using the insulating film and the photoresist layer which form the second pattern having the shrinked hole size as a mask. | 02-02-2012 |
| 20120028462 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac) | 02-02-2012 |
| 20120028437 | TRENCH-FILLING METHOD AND FILM-FORMING SYSTEM - A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide. | 02-02-2012 |
| 20120026593 | MICROLENS ARRAY MANUFACTURING METHOD, AND MICROLENS ARRAY - There is provided a manufacturing method for a microlens array including a multiple number of microlenses protruded in a substantially hemispherical shape from a surface. The manufacturing method includes forming a resist layer for forming a shape of the microlenses on an organic film layer serving as a material layer of the microlenses; and etching the formed resist layer and the organic film layer by using a mixed gas including hydrogen-containing molecules and fluorine-containing molecules. | 02-02-2012 |
| 20120025380 | MANGANESE OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C. | 02-02-2012 |
| 20120022836 | METHOD FOR AUTOMATED DETERMINATION OF AN OPTIMALLY PARAMETERIZED SCATTEROMETRY MODEL - Provided is an automated determination of an optimized parameterization of a scatterometry model for analysis of a sample diffracting structure having unknown parameters. A preprocessor determines from a plurality of floating model parameters, a reduced set of model parameters which can be reasonably floated in the scatterometry model based on a relative precision for each parameter determined from the Jacobian of measured spectral information with respect to each parameter. The relative precision for each parameter is determined in a manner which accounts for correlation between the parameters for a combination. | 01-26-2012 |
| 20120021611 | COATING TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND COATING TREATMENT APPARATUS - A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less. | 01-26-2012 |
| 20120021563 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL INTEGRATED CIRCUIT - There is provided a three-dimensional integrated circuit manufacturing method for temporarily attaching a chip to a transcription substrate, and securely detaching the chip from the transcription substrate when the chip is transferred to a supporting substrate. When a chip is temporarily attached to a transcription substrate, by evaporating a liquid existing between the chip and the transcription substrate, the solids of the chip and the transcription substrate can be attached to each other. Accordingly, the chip can be temporarily attached to the transcription substrate so as not to be deviated from its own position. Further, by setting adhesive strength between the chip and a supporting substrate to be higher than that between the chip and the transcription substrate, the chip can be securely detached from the transcription substrate when the chip is transferred from the transcription substrate to the supporting substrate. | 01-26-2012 |
| 20120021538 | PLASMA PROCESSING METHOD AND STORAGE MEDIUM - There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio. | 01-26-2012 |
| 20120018649 | ION SUPPLY DEVICE AND WORKPIECE PROCESSING SYSTEM PROVIDED WITH THE SAME - An ion supply device includes an ion generator for generating ions for removing static electricity, a carrier gas supply unit for supplying to the ion generator a carrier gas for carrying the ions generated in the ion generator, and an ion supply nozzle for blowing the ions and the carrier gas from the ion generator through a blow-off opening toward an electricity removal target from which static electricity is to be removed. A slit is provided at the blow-off opening and has an increased width as the slit gets distant from the electricity removal target. The ion supply nozzle includes an internal flow path and a plurality of internal fins provided at a portion of the internal flow path near the blow-off opening so that the ions and the carrier gas blown from the slit is uniformly distributed along a lengthwise direction of the slit. | 01-26-2012 |
| 20120017974 | METHOD AND DEVICE FOR DYE ADSORPTION FOR PHOTOSENSITIZING DYE, METHOD AND APPARATUS FOR PRODUCING DYE-SENSITIZED SOLAR CELL, AND DYE-SENSITIZED SOLAR CELL - A method for adsorption of a photosensitizing dye includes adsorbing the photosensitizing dye to the layer of an electrode material that functions as the working electrode of a dye-sensitized solar cell, within a reaction vessel containing a solution of the photosensitizing dye, wherein a flow of the photosensitizing dye solution is generated by means of a flow generation part in a direction perpendicular to the electrode material layer, a direction parallel thereto or both, and the flow rate of the photosensitizing dye solution to the electrode material layer is higher than the diffusion velocity of the photosensitizing dye. | 01-26-2012 |
| 20120016508 | SEMICONDUCTOR FABRICATION APPARATUS AND TEMPERATURE ADJUSTMENT METHOD - A semiconductor fabrication apparatus includes a semiconductor wafer mounting table having a cavity therein; and a nozzle which jets a liquefied temperature adjustment medium having a temperature equal to or less than a targeted temperature to an inner wall of the cavity in order to adjust a temperature of the semiconductor wafer mounting table to the targeted temperature. The semiconductor fabrication apparatus further includes a pressure detecting unit for detecting an internal pressure of the cavity; and a vacuum pump which discharges gas within the cavity such that a pressure detected by the pressure detecting unit becomes equal to or more than a saturated vapor pressure related to the temperature of the temperature adjustment medium jetted from the nozzle and equal to or less than a saturated vapor pressure related to the targeted temperature. | 01-19-2012 |
| 20120015525 | METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS - A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated. | 01-19-2012 |
| 20120015307 | COATING AND DEVELOPING APPARATUS AND METHOD, AND STORAGE MEDIUM - In one embodiment, a coating and developing apparatus is provided with transfer units, provided between a stack of early-stage processing unit blocks and a stack of later-stage processing unit blocks to transfer a substrate between the transport mechanisms of laterally-adjacent unit blocks, and a vertically-movable auxiliary transfer mechanism for transporting a substrate between the transfer units. A stack of first developing unit blocks is stacked on the stack of early-stage processing unit blocks, and a stack of second developing unit blocks is stacked on the stack of later-stage processing unit blocks. | 01-19-2012 |
| 20120014768 | VACUUM PROCESSING APPARATUS - In a vacuum processing apparatus, a process station includes processing regions arranged in a row at intervals to perform vacuum processing on substrates, the substrates being sequentially transferred between the processing regions from upstream to downstream; a first transport unit for transferring the substrates in a first preliminary vacuum chamber to the processing region at an upstream end; a second transport unit arranged between the adjacent processing regions; and a third transport unit for transferring the substrates from the processing region at a downstream end to a second preliminary vacuum chamber. The control unit outputs a control signal such that in the transfer operations in which the substrates are respectively transferred to the subsequent downstream processing regions from the first preliminary vacuum chamber to the processing region at the downstream end, time periods of at least two transfer operations partially or totally overlap with each other. | 01-19-2012 |
| 20120014689 | SUBSTRATE CLEANING APPARATUS, COATING AND DEVELOPING APPARATUS HAVING THE SAME AND SUBSTRATE CLEANING METHOD - A substrate cleaning apparatus includes a substrate holding and rotating unit for holding a center of a rear surface of a substrate and rotating the substrate; a cleaning unit including a first cleaning member, a second cleaning member provided around the first cleaning member and a base to which the first and second cleaning members are secured; an elevating unit for moving the substrate holding and rotating unit and the cleaning unit relative to each other so as to allow the first and second cleaning members to come into contact with the rear surface of the substrate held by the substrate holding and rotating unit; and a driving unit for driving the substrate and the cleaning unit relative to each other in a direction along the rear surface of the substrate so as to allow part of the second cleaning member to be exposed to the outside of the substrate. | 01-19-2012 |
| 20120013859 | COATING AND DEVELOPING APPARATUS AND METHOD - In one embodiment, a coating and developing apparatus includes a processing block having two early-stage coating unit blocks, two later-stage coating unit blocks and two developing unit blocks, each unit blocks being vertically stacked on each other. The apparatus has at least two operation modes M | 01-19-2012 |
| 20120013730 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY COMPUTER STORAGE MEDIUM - A substrate processing apparatus includes: a holding unit holding a substrate; a rotation driving unit rotating the substrate held on the holding unit; a moving mechanism moving the holding unit between a delivery position and an edge exposure position; an exposure unit provided on the edge exposure position side and exposing an edge portion of a coating film above the substrate held on the holding unit; an image capturing unit provided on the edge exposure position side and above the exposure unit and capturing an image of the substrate held on the holding unit; and a direction change unit changing a direction of an optical path formed between the substrate held on the holding unit and the image capturing unit. The direction change unit includes a first reflecting mirror, a second reflecting mirror, and a third reflecting mirror. | 01-19-2012 |
| 20120012556 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus | 01-19-2012 |
| 20120012254 | GATE VALVE CLEANING METHOD AND SUBSTRATE PROCESSING SYSTEM - A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber. | 01-19-2012 |
| 20120009829 | ELECTRICAL JOINT MEMBER FOR REDUCING AN ELECTRICAL RESISTANCE BETWEEN CONDUCTIVE MEMBERS IN A PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a member for propagating high frequency from a high frequency power supply and/or to which the high frequency is applied. A power feed rod is electromagnetically shielded between a matching unit and a bottom plate of a chamber by a coaxial cylindrical conductor connected to a ground potential. A surface potential system disposed in an appropriate distance from the power feed rod in radius direction is installed in the cylindrical conductor, and measures in a non-contact state the electrostatic surface potential of the power feed rod through electrostatic capacitance and provides a controller with a surface potential detection signal including surface potential measurement value information. The controller performs a required signal processing or operation processing on the basis of the surface potential detection signal from the surface potential system, thereby obtaining the measurement value of the DC potential on the power feed rod. | 01-12-2012 |
| 20120009786 | PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit. | 01-12-2012 |
| 20120009528 | COATING AND DEVELOPING APPARATUS AND METHOD - In one embodiment, a coating and developing apparatus includes a processing block including a vertical stack of early-stage processing unit blocks; a vertical stack of later-stage processing unit blocks disposed laterally adjacent to respective ones of the early-stage processing unit blocks; a vertical stack of developing unit blocks stacked on the early-stage processing unit blocks; a vertical stack of auxiliary processing unit blocks disposed laterally adjacent to respective ones of the developing unit blocks; first transfer units, each of which are disposed between the laterally adjacent early-stage processing unit and later-stage processing unit; second transfer units, each of which is disposed between the laterally adjacent developing unit block and auxiliary processing unit block; and a auxiliary transfer mechanism for transferring a substrate between the first transfer units and between the second transfer units. | 01-12-2012 |
| 20120008936 | COATING AND DEVELOPING APPARATUS - A coating and developing apparatus includes a processing block having at least one coating film-forming unit block stack and a vertically stacked developing unit block stack. Each unit block stack includes vertically stacked unit blocks, and each unit block includes processing modules containing liquid processing modules and heating modules. Each unit block includes a transport mechanism moveable along a transport passage from a carrier block side to an interface block side, to transport a substrate between the processing modules belonging to the unit block. Transfer units are provided on the carrier block sides of the coating film-forming unit blocks and the developing unit blocks respectively, for transferring a substrate to and from the transport mechanism of the associated coating film-forming or developing unit blocks. A first transfer mechanism transfers a substrate removed from a carrier to one of the transfer units associated with the coating film-forming unit blocks. | 01-12-2012 |
| 20120006782 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method for removing a copper oxide film on a surface of Cu and a Cu-containing residue adhered to an interlayer insulating film in a Cu wiring structure on a substrate by using an organic acid-containing gas is provided. The substrate processing method includes removing the Cu-containing residue by etching by supplying the substrate with a processing gas containing an organic acid gas, after the temperature of the substrate is set to be maintained at a first temperature; and removing the copper oxide film on the surface of Cu by means of a reduction reaction by supplying the substrate with the processing gas containing the organic acid gas, after the temperature of the substrate is set to be maintained at a second temperature that is higher than the first temperature. | 01-12-2012 |
| 20120006492 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 01-12-2012 |
| 20120006488 | RING-SHAPED COMPONENT FOR USE IN A PLASMA PROCESSING, PLASMA PROCESSING APPARATUS AND OUTER RING-SHAPED MEMBER - A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves. | 01-12-2012 |
| 20120006362 | SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD - A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction. | 01-12-2012 |
| 20120004753 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD ADOPTED IN SUBSTRATE PROCESSING APPARATUS - In a substrate processing apparatus according to the present invention, wafer transfer timing with which wafers are to be transferred to individual processing chambers from a cassette container is determined in correspondence to each processing chamber, based upon the lengths of time required to process a single wafer in the processing chambers. Then, wafers are transferred from the cassette container in conformance to the transfer timing thus determined. By setting the wafer transfer timing with which wafers are transferred from the cassette container in coordination with the lengths of processing time at the individual processing chambers, the operation rates in the processing chambers are improved and ultimately, the throughput of the apparatus is improved. | 01-05-2012 |
| 20120003842 | METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber | 01-05-2012 |
| 20120003825 | METHOD OF FORMING STRAINED EPITAXIAL CARBON-DOPED SILICON FILMS - A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface. | 01-05-2012 |
| 20120002183 | LOCAL EXPOSURE APPARATUS, LOCAL EXPOSURE METHOD AND STORAGE MEDIUM - A local exposure apparatus for performing exposure processing on a specific area of a photosensitive film formed on a substrate includes a substrate conveyor configured to define a substrate conveying path and to horizontally convey the substrate along the substrate conveying path, a chamber configured to define an exposure processing space, a light source including a plurality of light-emitting elements linearly arranged above the substrate conveying path, a light emission drive unit configured to selectively drive one or more of the light-emitting elements of the light source, a substrate detector configured to detect the substrate conveyed by the substrate conveyor, and a control unit configured to control the light emission drive unit such that, when the specific area of the photosensitive film moves below the light source, only the light-emitting elements capable of irradiating the given area are driven to emit the light. | 01-05-2012 |
| 20120001304 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - There are provided a semiconductor device and a semiconductor device manufacturing method capable of preventing electrical leakage while suppressing increase of wiring resistance and deterioration of productivity. The semiconductor device manufacturing method for forming on a substrate a semiconductor device having a porous low-k film serving as an interlayer insulating film. Further, the semiconductor device manufacturing method includes forming the low-k film on the substrate; etching the low-k film to form a trench or a hole therein; reforming a surface of the low-k film exposed by etching the low-k film by allowing plasma of a nitro compound to act on the exposed surface within the trench or the hole; and filling the trench or the hole with a conductor. | 01-05-2012 |
| 20120001102 | HIGHLY CLEAN AND HOT VALVE - A highly clean and high temperature valve apparatus includes a valve driving unit and a valve casing connected to a bonnet supporting a valve stem slidably. A stem portion has one end positioned in a circumferential wall closed at its two ends by upper and lower covers, and supports one end of the valve stem with its other end extending through the lower cover. The stem portion has its ends supported respectively by first and second bellows for closing an axial through hole of the lower cover tightly. A first pipe communicates with a first space isolated by the first bellows, and a second pipe communicates with a second space isolated by the first bellows. The fluid quantities in the first and second spaces are increased or decreased relative to each other, thereby to drive the stem portion supported in a floating state by the first and second bellows. | 01-05-2012 |
| 20120000886 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate. | 01-05-2012 |
| 20120000629 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates. | 01-05-2012 |
| 20120000612 | SUBSTRATE STAGE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM - A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other. | 01-05-2012 |
| 20110318936 | Etch process for reducing silicon recess - A method for selectively etching a substrate is described. The method includes disposing a substrate comprising a silicon nitride (SiN | 12-29-2011 |
| 20110318935 | METHOD OF SETTING THICKNESS OF DIELECTRIC AND SUBSTRATE PROCESSING APPARATUS HAVING DIELECTRIC DISPOSED IN ELECTRODE - Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less. | 12-29-2011 |
| 20110318934 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed | 12-29-2011 |
| 20110318933 | SUBSTRATE PROCESSING METHOD - There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: ( | 12-29-2011 |
| 20110318925 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line. | 12-29-2011 |
| 20110318919 | SURFACE TREATMENT FOR A FLUOROCARBON FILM - A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step. | 12-29-2011 |
| 20110315318 | FOCUS RING AND MANUFACTURING METHOD THEREFOR - There is provided a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The focus ring is arranged to surround a periphery of a substrate mounted on the mounting table having a temperature control device. Further, the focus ring includes a flexible heat transfer sheet. Furthermore, the focus ring is in contact with the mounting table via the heat transfer sheet, and the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface. | 12-29-2011 |
| 20110315169 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS - In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. | 12-29-2011 |
| 20110312192 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed. | 12-22-2011 |
| 20110312190 | COATING METHOD AND COATING APPARATUS - A coating method based on such a technique includes a prewetting step of supplying a prewetting liquid to the center of a substrate (W) and rotating the substrate thereby spreading the prewetting liquid over the whole surface of a first substrate, and a coating film forming step of supplying a coating solution (e.g., a resist solution) to the substrate supplied with the prewetting liquid and drying the coating solution thereby forming a coating film on the surface of the first substrate. The prewetting liquid used is a mixed liquid obtained by mixing a solvent capable of dissolving components of the coating film (e.g., components of resist) and a high surface tension liquid having a surface tension higher than that of the solvent, the mixed liquid having a surface tension higher than that of the coating solution. | 12-22-2011 |
| 20110312188 | PROCESSING APPARATUS AND FILM FORMING METHOD - A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means. | 12-22-2011 |
| 20110309849 | INSPECTION METHOD FOR INSPECTING ELECTRIC CHARACTERISTICS OF DEVICES FORMED ON TARGET OBJECT - An inspection method for inspecting electric characteristics of devices formed on a target object using an apparatus including a vertical drive mechanism for lifting and lowering a movable mounting table and a control unit for controlling the vertical drive mechanism. The vertical drive mechanism includes an elevation shaft connected to the mounting table and a servo motor for driving the elevation shaft to lift and lower the mounting table. The control unit has a servo driver including a position control part for controlling a position of the motor, a torque control part for controlling a torque of the motor as a probe card is expanded or contracted by a change in temperature and a switching part for switching the position control part and the torque control part. The method includes heating or cooling the target object, controlling a position of the motor, and controlling a torque of the motor. | 12-22-2011 |
| 20110309562 | SUPPORT STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows from the bottom to the top or from the top to the bottom, includes: a top plate portion; a bottom portion; and a plurality of support posts connecting the top plate portion and the bottom portion. A plurality of support portions for supporting the objects to be processed are formed in each support post along the longitudinal direction, and the pitch of the support portions is set larger on the downstream side than on the upstream side in the flow direction of the processing gas. The support structure can enhance the in-plane uniformity of the thickness of a film formed on a processing object. | 12-22-2011 |
| 20110308733 | PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER SUPPORT DEVICE - There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount. | 12-22-2011 |
| 20110308549 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS - In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved. | 12-22-2011 |
| 20110308464 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM - Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates. | 12-22-2011 |
| 20110308067 | POSITIONING APPARATUS, A SUBSTRATE PROCESSING APPARATUS AND METHOD FOR FIXING A REFERENCE MEMBER - Provided is a positioning apparatus including: a reference member that is serving as a reference for positioning; a support part that supports the reference member; and a first fixing member provided on the support part that fixes the reference member and the support part or releases the fixing. The reference member is connected to the support part in a movable state and fixed to the support part by the first fixing member after a position is determined. The reference member of the positioning apparatus is precisely installed to a reference position. | 12-22-2011 |
| 20110307089 | METHOD AND SYSTEM FOR PERFORMING A CHEMICAL OXIDE REMOVAL PROCESS - A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH | 12-15-2011 |
| 20110306214 | Method of selectively etching an insulation stack for a metal interconnect - A method of patterning an insulation layer is described. The method includes preparing a film stack on a substrate, wherein the film stack comprises a cap layer, a SiCOH-containing layer overlying the cap layer, and a hard mask overlying the SiCOH-containing layer. The method further includes transferring a pattern through the film stack by performing a series of etch processes in a plasma etching system, wherein the series of etch processes utilize a temperature controlled substrate holder in the plasma etching system according to a substrate temperature control scheme that achieves etch selectivity between the SiCOH-containing layer and the underlying cap layer. | 12-15-2011 |
| 20110305831 | Method for chemical vapor deposition control - A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate. | 12-15-2011 |
| 20110303654 | Device to reduce shadowing during radiative heating of a substrate - A substrate heating apparatus configured to be coupled to a processing system and radiatively heat a substrate is described. The substrate heating apparatus comprises a radiative heat source coupled to a processing system and configured to produce electromagnetic (EM) radiation, a translucent object disposed between the radiative heat source and the substrate along an EM wave path there between, and an opaque object disposed between the radiative heat source and the substrate along the EM wave path there between. The translucent object comprises at least one textured surface to cause random refraction of the EM radiation passing through the translucent object, or an optical waveguide configured to encapsulate the opaque object and direct the EM radiation around the opaque object, or a combination thereof. | 12-15-2011 |
| 20110303643 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded. | 12-15-2011 |
| 20110303642 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM - A substrate processing system that can reliably prevent a rear surface of a substrate from getting scratched without bringing about a decrease in the throughput. A printing module connected to a loader module prints a protective film on the rear surface of the substrate before the substrate is subjected to plasma etching processing. A cleaning module connected to the loader module removes the protective film from the rear surface of the substrate after the substrate has been subjected to the plasma etching processing. | 12-15-2011 |
| 20110303364 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations. | 12-15-2011 |
| 20110303363 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus for plasma-processing a substrate by exciting a gas by the microwave includes a processing container formed of metal, a microwave source for outputting the microwave, a first dielectric member that faces an inner wall of the processing container and for transmitting the microwave output from the microwave source into the processing container, and a second dielectric member that is provided on an inner surface of the processing container and restrains the microwave from propagating along the inner surface of the processing container. | 12-15-2011 |
| 20110303362 | PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF - There is provided a plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high frequency antenna. The apparatus includes a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber in a space above the mounting table, and each gas nozzle has a gas discharge hole at a leading end of the gas nozzle in a protruding direction and a gas discharge hole at a sidewall of the gas nozzle. Further, the apparatus includes a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles and each central axis is extended in the protruding direction of each of the gas nozzles. | 12-15-2011 |
| 20110303152 | SUPPORT STRUCTURE, PROCESSING CONTAINER STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plurality of support posts connecting the top plate section and the bottom section, wherein a plurality of support portions for supporting the objects to be processed are formed in each support post at a predetermined pitch along the longitudinal direction, and the distance between the topmost support portion of the support portions of each support post and the top plate section as well as the distance between the lowermost support portion of the support portions of each support post and the bottom section are set not more than the pitch of the support portions. The support structure can prevent the occurrence of a turbulent gas flow in the top and bottom areas of the processing container structure. | 12-15-2011 |
| 20110303145 | Apparatus for chemical vapor deposition control - A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate. | 12-15-2011 |
| 20110300719 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film. | 12-08-2011 |
| 20110300717 | METHOD FOR CONTROLLING DANGLING BONDS IN FLUOROCARBON FILMS - Embodiments of the invention describe methods for forming fluorocarbon (CF) films for semiconductor devices. According to one embodiment, the method includes providing a substrate, depositing a CF film on the substrate, generating, in the absence of a plasma, a treatment gas containing a gaseous specie having a molecular dipole, and treating the CF film with the treatment gas containing the gaseous specie having the molecular dipole to reduce the number of dangling bonds in the CF film. According to some embodiments, the method further includes depositing a second CF film on the treated CF film. According to some embodiments, the CF films may be deposited using a microwave plasma source containing a radial line slot antenna (RLSA). | 12-08-2011 |
| 20110298465 | PROCESS MONITOR AND SEMICONDUCTOR MANUFACTURING APPARATUS - A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor. | 12-08-2011 |
| 20110297257 | SUBSTRATE LIQUID PROCESSING APPARATUS, METHOD OF CONTROLLING SUBSTRATE LIQUID PROCESSING APPARATUS, AND STORAGE MEDIUM PERFORMING SUBSTRATE LIQUID PROCESSING APPARATUS CONTROL METHOD ON SUBSTRATE LIQUID PROCESSING APPARATUS - A substrate liquid processing apparatus includes a placement table configured to hold a substrate, a rotary driving unit configured to rotate the placement table, a liquid supply unit configured to supply a liquid to the substrate placed on the placement table, and an upper liquid guide cup, a central liquid guide cup, and a lower liquid guide cup which are disposed in this order from the top and are configured to guide downward the liquid scattering from the rotating substrate being placed on the placement table. A driving mechanism is configured to move up and down the upper liquid guide cup, the central liquid guide cup, and the lower liquid guide cup. The driving mechanism is connected to the central liquid guide cup. | 12-08-2011 |
| 20110297192 | SUBSTRATE LIQUID PROCESSING APPARATUS - A substrate liquid processing apparatus of the present invention includes a process-liquid supply unit selectively supplying a plurality of types of process-liquids to the substrate held by a substrate holding table, first and second guide cups which are disposed in this order from the top and are configured to respectively guide downward the process-liquid scattering from the rotating substrate while being held by the substrate holding table; and a position adjustment mechanism adjusting a positional relationship between the first and second guide cups and the substrate holding table. A first process-liquid recovery tank is provided at a lower area of the first and second guide cups and recovers the process-liquid guided by the first guide cup. A second process-liquid recovery tank is provided at the inner peripheral side of the first process-liquid recovery tank and recovers the process-liquid guided by the second guide cup. | 12-08-2011 |
| 20110297085 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM - A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier. | 12-08-2011 |
| 20110296707 | SUBSTRATE PROCESSING METHOD, AND PROGRAM STORAGE MEDIUM THEREFOR - A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control. | 12-08-2011 |
| 20110294232 | METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. | 12-01-2011 |
| 20110293401 | TURBOMOLECULAR PUMP, AND PARTICLE TRAP FOR TURBOMOLECULAR PUMP - A turbomolecular pump includes: a rotor ( | 12-01-2011 |
