| Tokyo Electron Limited Patent applications |
| Patent application number | Title | Published |
|---|
| 20120034793 | METHOD FOR FORMING METAL NITRIDE FILM - A wafer serving as a target substrate to be processed is loaded into a chamber, and an inside of the chamber is maintained under a vacuum level. Then, a TiN film is formed on the wafer by alternately supplying TiCl | 02-09-2012 |
| 20120034792 | COATING TREATMENT METHOD - The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a first number of rotations. The substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, consumption of the resist solution can be suppressed and a high in-plane uniformity can be obtained for the film thickness of the resist film. | 02-09-2012 |
| 20120034566 | MICRO-CHANNEL DEVICE AND METHOD FOR FABRICATING MICRO-CHANNEL DEVICE - A micro-channel device provided in a solution analysis system using pressure liquid feed comprises a plurality of straight-line channels and curved channels connecting the ends of the neighboring straight-line channels. The width w of each curved channel is smaller than the width t of each straight-line channel. The radius of curvature r of each curved channel is set so that the value of a expressed by formula (1) is equal to or smaller than the value of a at a local maximum point of the theoretical step height H expressed by formula (2) and based on the shape of the curved channel. | 02-09-2012 |
| 20120034557 | Method for preparing alignment mark for multiple patterning - A method for image pattern recognition in a multi-image patterning scheme is described. The method includes forming a first feature pattern on a substrate using a lithographic process, and forming a second feature pattern on the substrate using the lithographic process. The method further includes forming an inspection alignment mark on the substrate to distinguish the first feature pattern from the second feature pattern. The inspection alignment mark comprises a negative tone pattern having a first alignment structure aligned with at least a portion of the first feature pattern and a second alignment structure aligned with at least a portion of the second feature pattern, wherein the first alignment structure is independent from the second alignment structure. | 02-09-2012 |
| 20120034369 | VAPORIZING APPARATUS, SUBSTRATE PROCESSING APPARATUS, COATING AND DEVELOPING APPARATUS, AND SUBSTRATE PROCESSING METHOD - A vaporizing apparatus includes a heating plate disposed in a container to heat and vaporize a liquid chemical, a gas supply unit configured to supply a carrier gas carrying the chemical vaporized by the heating plate, into the container, a first detecting unit configured to detect the supply of the carrier gas into the container, and a second detecting unit configured to detect the vaporization of the liquid chemical by the heating plate. | 02-09-2012 |
| 20120031889 | MOUNTING TABLE STRUCTURE AND PROCESSING APPARATUS - Provided is a mounting table structure on which a target object is mounted to perform a heat treatment on the target object in a processing chamber and which heats the mounted target object. Outermost peripheral feed lines are connected to a plurality of positions different in the circumferential direction of an outermost peripheral resistance heating heater for heating an outermost peripheral heating zone of a mounting table body, thereby dividing the outermost peripheral resistance heating heater into a plurality of heater sections. A heater control unit can individually control electrical states (for example, voltage application states, zero potential states, and floating states) of the respective outermost peripheral feed lines. The power supply state of each of the heater sections can be changed by a simple configuration. | 02-09-2012 |
| 20120031875 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method includes: etching an anti reflection coating film with plasma generated from an etching gas by using a resist film that is patterned as a mask, in a deposited film in which an Si-ARC film constituting the anti reflection coating film is formed on a layer to be etched and the ArF resist film is formed on the anti reflection coating film; and modifying the ArF resist film with plasma generated from a modifying gas including a CF | 02-09-2012 |
| 20120031563 | PLASMA PROCESSING DEVICE - An inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container; an antenna-placing section provided between an inner surface and an outer surface of a wall of the vacuum container; a radio-frequency antenna placed in the antenna-placing section, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member separating the antenna-placing section and an internal space of the vacuum container, wherein the radio-frequency antenna has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves. | 02-09-2012 |
| 20120031560 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: an evacuable chamber | 02-09-2012 |
| 20120031434 | SUBSTRATE CLEANING METHOD - There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate. | 02-09-2012 |
| 20120031339 | DEPOSITION HEAD AND FILM FORMING APPARATUS - There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing. | 02-09-2012 |
| 20120031334 | GAS EXHAUST SYSTEM OF FILM-FORMING APPARATUS, FILM-FORMING APPARATUS, AND METHOD FOR PROCESSING EXHAUST GAS - A film-forming apparatus includes a processing chamber, and TiCl | 02-09-2012 |
| 20120031266 | EXHAUSTING METHOD AND GAS PROCESSING APPARATUS - An exhausting method includes determining an exhaust flow rate of a process gas to be a predetermined value that is less than or equal to a gas flow rate corresponding to a maximum process capability of a purification system when the process gas is diluted to a lower explosive limit; calculating a pressure drop amount per unit time to maintain the determined exhaust flow rate of the process gas, based on a relation between the exhaust flow rate and the pressure drop amount per unit time; and evacuating an inside of the chamber to maintain the determined exhaust flow rate, while controlling the pressure through an automatic pressure control valve by setting a target pressure value to be updated as a control value of the automatic pressure control valve at every predetermined time interval so as to achieve a calculated pressure drop amount per unit time. | 02-09-2012 |
| 20120029863 | PARTICLE DISTRIBUTION ANALYSIS METHOD FOR COMPUTER READABLE STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD - There is provided a support method for a particle distribution analysis for a substrate. In the support method, histogram data of inter-particle distances are created for all particles on a target substrate subjected to the particle distribution analysis from particle coordinate data of the target substrate. Further, histogram data of inter-particle distances are created for multiple virtual substrates each having the same number of randomly distributed particles as the particles on the target substrate. Based on a difference between the histogram data of the target substrate and the histogram data of each of the virtual substrates, determination data are created by quantifying a distance between the histogram data of the target substrate and the histogram data of the multiple virtual substrates, and the determination data are displayed on a display unit. | 02-02-2012 |
| 20120028471 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall of the second pattern of the photoresist layer; and etching the thin film using the insulating film and the photoresist layer which form the second pattern having the shrinked hole size as a mask. | 02-02-2012 |
| 20120028462 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber 1, and a film-forming source material in a vapor state is introduced into the chamber 1. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac) | 02-02-2012 |
| 20120028437 | TRENCH-FILLING METHOD AND FILM-FORMING SYSTEM - A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide. | 02-02-2012 |
| 20120026593 | MICROLENS ARRAY MANUFACTURING METHOD, AND MICROLENS ARRAY - There is provided a manufacturing method for a microlens array including a multiple number of microlenses protruded in a substantially hemispherical shape from a surface. The manufacturing method includes forming a resist layer for forming a shape of the microlenses on an organic film layer serving as a material layer of the microlenses; and etching the formed resist layer and the organic film layer by using a mixed gas including hydrogen-containing molecules and fluorine-containing molecules. | 02-02-2012 |
| 20120025380 | MANGANESE OXIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C. | 02-02-2012 |
| 20120022836 | METHOD FOR AUTOMATED DETERMINATION OF AN OPTIMALLY PARAMETERIZED SCATTEROMETRY MODEL - Provided is an automated determination of an optimized parameterization of a scatterometry model for analysis of a sample diffracting structure having unknown parameters. A preprocessor determines from a plurality of floating model parameters, a reduced set of model parameters which can be reasonably floated in the scatterometry model based on a relative precision for each parameter determined from the Jacobian of measured spectral information with respect to each parameter. The relative precision for each parameter is determined in a manner which accounts for correlation between the parameters for a combination. | 01-26-2012 |
| 20120021611 | COATING TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND COATING TREATMENT APPARATUS - A coating treatment method includes: a first step of rotating a substrate at a first rotation number; a second step of rotating the substrate at a second rotation number being slower than the first rotation number; a third step of rotating the substrate at a third rotation number being faster than the second rotation number and slower than the first rotation number; a fourth step of rotating the substrate at a fourth rotation number being slower than the third rotation number; and a fifth step of rotating the substrate at a fifth rotation number being faster than the fourth rotation number. A supply of a coating solution to a central portion of the substrate is continuously performed from the first step to a middle of the second step or during the first step, and the fourth rotation number is more than 0 rpm and 500 rpm or less. | 01-26-2012 |
| 20120021563 | METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL INTEGRATED CIRCUIT - There is provided a three-dimensional integrated circuit manufacturing method for temporarily attaching a chip to a transcription substrate, and securely detaching the chip from the transcription substrate when the chip is transferred to a supporting substrate. When a chip is temporarily attached to a transcription substrate, by evaporating a liquid existing between the chip and the transcription substrate, the solids of the chip and the transcription substrate can be attached to each other. Accordingly, the chip can be temporarily attached to the transcription substrate so as not to be deviated from its own position. Further, by setting adhesive strength between the chip and a supporting substrate to be higher than that between the chip and the transcription substrate, the chip can be securely detached from the transcription substrate when the chip is transferred from the transcription substrate to the supporting substrate. | 01-26-2012 |
| 20120021538 | PLASMA PROCESSING METHOD AND STORAGE MEDIUM - There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio. | 01-26-2012 |
| 20120018649 | ION SUPPLY DEVICE AND WORKPIECE PROCESSING SYSTEM PROVIDED WITH THE SAME - An ion supply device includes an ion generator for generating ions for removing static electricity, a carrier gas supply unit for supplying to the ion generator a carrier gas for carrying the ions generated in the ion generator, and an ion supply nozzle for blowing the ions and the carrier gas from the ion generator through a blow-off opening toward an electricity removal target from which static electricity is to be removed. A slit is provided at the blow-off opening and has an increased width as the slit gets distant from the electricity removal target. The ion supply nozzle includes an internal flow path and a plurality of internal fins provided at a portion of the internal flow path near the blow-off opening so that the ions and the carrier gas blown from the slit is uniformly distributed along a lengthwise direction of the slit. | 01-26-2012 |
| 20120017974 | METHOD AND DEVICE FOR DYE ADSORPTION FOR PHOTOSENSITIZING DYE, METHOD AND APPARATUS FOR PRODUCING DYE-SENSITIZED SOLAR CELL, AND DYE-SENSITIZED SOLAR CELL - A method for adsorption of a photosensitizing dye includes adsorbing the photosensitizing dye to the layer of an electrode material that functions as the working electrode of a dye-sensitized solar cell, within a reaction vessel containing a solution of the photosensitizing dye, wherein a flow of the photosensitizing dye solution is generated by means of a flow generation part in a direction perpendicular to the electrode material layer, a direction parallel thereto or both, and the flow rate of the photosensitizing dye solution to the electrode material layer is higher than the diffusion velocity of the photosensitizing dye. | 01-26-2012 |
| 20120016508 | SEMICONDUCTOR FABRICATION APPARATUS AND TEMPERATURE ADJUSTMENT METHOD - A semiconductor fabrication apparatus includes a semiconductor wafer mounting table having a cavity therein; and a nozzle which jets a liquefied temperature adjustment medium having a temperature equal to or less than a targeted temperature to an inner wall of the cavity in order to adjust a temperature of the semiconductor wafer mounting table to the targeted temperature. The semiconductor fabrication apparatus further includes a pressure detecting unit for detecting an internal pressure of the cavity; and a vacuum pump which discharges gas within the cavity such that a pressure detected by the pressure detecting unit becomes equal to or more than a saturated vapor pressure related to the temperature of the temperature adjustment medium jetted from the nozzle and equal to or less than a saturated vapor pressure related to the targeted temperature. | 01-19-2012 |
| 20120015525 | METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS - A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated. | 01-19-2012 |
| 20120015307 | COATING AND DEVELOPING APPARATUS AND METHOD, AND STORAGE MEDIUM - In one embodiment, a coating and developing apparatus is provided with transfer units, provided between a stack of early-stage processing unit blocks and a stack of later-stage processing unit blocks to transfer a substrate between the transport mechanisms of laterally-adjacent unit blocks, and a vertically-movable auxiliary transfer mechanism for transporting a substrate between the transfer units. A stack of first developing unit blocks is stacked on the stack of early-stage processing unit blocks, and a stack of second developing unit blocks is stacked on the stack of later-stage processing unit blocks. | 01-19-2012 |
| 20120014768 | VACUUM PROCESSING APPARATUS - In a vacuum processing apparatus, a process station includes processing regions arranged in a row at intervals to perform vacuum processing on substrates, the substrates being sequentially transferred between the processing regions from upstream to downstream; a first transport unit for transferring the substrates in a first preliminary vacuum chamber to the processing region at an upstream end; a second transport unit arranged between the adjacent processing regions; and a third transport unit for transferring the substrates from the processing region at a downstream end to a second preliminary vacuum chamber. The control unit outputs a control signal such that in the transfer operations in which the substrates are respectively transferred to the subsequent downstream processing regions from the first preliminary vacuum chamber to the processing region at the downstream end, time periods of at least two transfer operations partially or totally overlap with each other. | 01-19-2012 |
| 20120014689 | SUBSTRATE CLEANING APPARATUS, COATING AND DEVELOPING APPARATUS HAVING THE SAME AND SUBSTRATE CLEANING METHOD - A substrate cleaning apparatus includes a substrate holding and rotating unit for holding a center of a rear surface of a substrate and rotating the substrate; a cleaning unit including a first cleaning member, a second cleaning member provided around the first cleaning member and a base to which the first and second cleaning members are secured; an elevating unit for moving the substrate holding and rotating unit and the cleaning unit relative to each other so as to allow the first and second cleaning members to come into contact with the rear surface of the substrate held by the substrate holding and rotating unit; and a driving unit for driving the substrate and the cleaning unit relative to each other in a direction along the rear surface of the substrate so as to allow part of the second cleaning member to be exposed to the outside of the substrate. | 01-19-2012 |
| 20120013859 | COATING AND DEVELOPING APPARATUS AND METHOD - In one embodiment, a coating and developing apparatus includes a processing block having two early-stage coating unit blocks, two later-stage coating unit blocks and two developing unit blocks, each unit blocks being vertically stacked on each other. The apparatus has at least two operation modes M | 01-19-2012 |
| 20120013730 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY COMPUTER STORAGE MEDIUM - A substrate processing apparatus includes: a holding unit holding a substrate; a rotation driving unit rotating the substrate held on the holding unit; a moving mechanism moving the holding unit between a delivery position and an edge exposure position; an exposure unit provided on the edge exposure position side and exposing an edge portion of a coating film above the substrate held on the holding unit; an image capturing unit provided on the edge exposure position side and above the exposure unit and capturing an image of the substrate held on the holding unit; and a direction change unit changing a direction of an optical path formed between the substrate held on the holding unit and the image capturing unit. The direction change unit includes a first reflecting mirror, a second reflecting mirror, and a third reflecting mirror. | 01-19-2012 |
| 20120012556 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - A plasma etching apparatus | 01-19-2012 |
| 20120012254 | GATE VALVE CLEANING METHOD AND SUBSTRATE PROCESSING SYSTEM - A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber. | 01-19-2012 |
| 20120009829 | ELECTRICAL JOINT MEMBER FOR REDUCING AN ELECTRICAL RESISTANCE BETWEEN CONDUCTIVE MEMBERS IN A PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a member for propagating high frequency from a high frequency power supply and/or to which the high frequency is applied. A power feed rod is electromagnetically shielded between a matching unit and a bottom plate of a chamber by a coaxial cylindrical conductor connected to a ground potential. A surface potential system disposed in an appropriate distance from the power feed rod in radius direction is installed in the cylindrical conductor, and measures in a non-contact state the electrostatic surface potential of the power feed rod through electrostatic capacitance and provides a controller with a surface potential detection signal including surface potential measurement value information. The controller performs a required signal processing or operation processing on the basis of the surface potential detection signal from the surface potential system, thereby obtaining the measurement value of the DC potential on the power feed rod. | 01-12-2012 |
| 20120009786 | PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit. | 01-12-2012 |
| 20120009528 | COATING AND DEVELOPING APPARATUS AND METHOD - In one embodiment, a coating and developing apparatus includes a processing block including a vertical stack of early-stage processing unit blocks; a vertical stack of later-stage processing unit blocks disposed laterally adjacent to respective ones of the early-stage processing unit blocks; a vertical stack of developing unit blocks stacked on the early-stage processing unit blocks; a vertical stack of auxiliary processing unit blocks disposed laterally adjacent to respective ones of the developing unit blocks; first transfer units, each of which are disposed between the laterally adjacent early-stage processing unit and later-stage processing unit; second transfer units, each of which is disposed between the laterally adjacent developing unit block and auxiliary processing unit block; and a auxiliary transfer mechanism for transferring a substrate between the first transfer units and between the second transfer units. | 01-12-2012 |
| 20120008936 | COATING AND DEVELOPING APPARATUS - A coating and developing apparatus includes a processing block having at least one coating film-forming unit block stack and a vertically stacked developing unit block stack. Each unit block stack includes vertically stacked unit blocks, and each unit block includes processing modules containing liquid processing modules and heating modules. Each unit block includes a transport mechanism moveable along a transport passage from a carrier block side to an interface block side, to transport a substrate between the processing modules belonging to the unit block. Transfer units are provided on the carrier block sides of the coating film-forming unit blocks and the developing unit blocks respectively, for transferring a substrate to and from the transport mechanism of the associated coating film-forming or developing unit blocks. A first transfer mechanism transfers a substrate removed from a carrier to one of the transfer units associated with the coating film-forming unit blocks. | 01-12-2012 |
| 20120006782 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method for removing a copper oxide film on a surface of Cu and a Cu-containing residue adhered to an interlayer insulating film in a Cu wiring structure on a substrate by using an organic acid-containing gas is provided. The substrate processing method includes removing the Cu-containing residue by etching by supplying the substrate with a processing gas containing an organic acid gas, after the temperature of the substrate is set to be maintained at a first temperature; and removing the copper oxide film on the surface of Cu by means of a reduction reaction by supplying the substrate with the processing gas containing the organic acid gas, after the temperature of the substrate is set to be maintained at a second temperature that is higher than the first temperature. | 01-12-2012 |
| 20120006492 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 01-12-2012 |
| 20120006488 | RING-SHAPED COMPONENT FOR USE IN A PLASMA PROCESSING, PLASMA PROCESSING APPARATUS AND OUTER RING-SHAPED MEMBER - A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves. | 01-12-2012 |
| 20120006362 | SUBSTRATE CLEANING DEVICE AND SUBSTRATE CLEANING METHOD - A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction. | 01-12-2012 |
| 20120004753 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD ADOPTED IN SUBSTRATE PROCESSING APPARATUS - In a substrate processing apparatus according to the present invention, wafer transfer timing with which wafers are to be transferred to individual processing chambers from a cassette container is determined in correspondence to each processing chamber, based upon the lengths of time required to process a single wafer in the processing chambers. Then, wafers are transferred from the cassette container in conformance to the transfer timing thus determined. By setting the wafer transfer timing with which wafers are transferred from the cassette container in coordination with the lengths of processing time at the individual processing chambers, the operation rates in the processing chambers are improved and ultimately, the throughput of the apparatus is improved. | 01-05-2012 |
| 20120003842 | METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber | 01-05-2012 |
| 20120003825 | METHOD OF FORMING STRAINED EPITAXIAL CARBON-DOPED SILICON FILMS - A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface. | 01-05-2012 |
| 20120002183 | LOCAL EXPOSURE APPARATUS, LOCAL EXPOSURE METHOD AND STORAGE MEDIUM - A local exposure apparatus for performing exposure processing on a specific area of a photosensitive film formed on a substrate includes a substrate conveyor configured to define a substrate conveying path and to horizontally convey the substrate along the substrate conveying path, a chamber configured to define an exposure processing space, a light source including a plurality of light-emitting elements linearly arranged above the substrate conveying path, a light emission drive unit configured to selectively drive one or more of the light-emitting elements of the light source, a substrate detector configured to detect the substrate conveyed by the substrate conveyor, and a control unit configured to control the light emission drive unit such that, when the specific area of the photosensitive film moves below the light source, only the light-emitting elements capable of irradiating the given area are driven to emit the light. | 01-05-2012 |
| 20120001304 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - There are provided a semiconductor device and a semiconductor device manufacturing method capable of preventing electrical leakage while suppressing increase of wiring resistance and deterioration of productivity. The semiconductor device manufacturing method for forming on a substrate a semiconductor device having a porous low-k film serving as an interlayer insulating film. Further, the semiconductor device manufacturing method includes forming the low-k film on the substrate; etching the low-k film to form a trench or a hole therein; reforming a surface of the low-k film exposed by etching the low-k film by allowing plasma of a nitro compound to act on the exposed surface within the trench or the hole; and filling the trench or the hole with a conductor. | 01-05-2012 |
| 20120001102 | HIGHLY CLEAN AND HOT VALVE - A highly clean and high temperature valve apparatus includes a valve driving unit and a valve casing connected to a bonnet supporting a valve stem slidably. A stem portion has one end positioned in a circumferential wall closed at its two ends by upper and lower covers, and supports one end of the valve stem with its other end extending through the lower cover. The stem portion has its ends supported respectively by first and second bellows for closing an axial through hole of the lower cover tightly. A first pipe communicates with a first space isolated by the first bellows, and a second pipe communicates with a second space isolated by the first bellows. The fluid quantities in the first and second spaces are increased or decreased relative to each other, thereby to drive the stem portion supported in a floating state by the first and second bellows. | 01-05-2012 |
| 20120000886 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate. | 01-05-2012 |
| 20120000629 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates. | 01-05-2012 |
| 20120000612 | SUBSTRATE STAGE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM - A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other. | 01-05-2012 |
| 20110318936 | Etch process for reducing silicon recess - A method for selectively etching a substrate is described. The method includes disposing a substrate comprising a silicon nitride (SiN | 12-29-2011 |
| 20110318935 | METHOD OF SETTING THICKNESS OF DIELECTRIC AND SUBSTRATE PROCESSING APPARATUS HAVING DIELECTRIC DISPOSED IN ELECTRODE - Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less. | 12-29-2011 |
| 20110318934 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed | 12-29-2011 |
| 20110318933 | SUBSTRATE PROCESSING METHOD - There is provided a substrate processing method capable of preventing the decrease in etching efficiency by positive ions and increasing the overall etching efficiency by using negative ions. The substrate processing method includes applying a plasma RF and a bias RF in the pattern of a pulse wave, respectively. The substrate processing method repeatedly performs the steps of: ( | 12-29-2011 |
| 20110318925 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line. | 12-29-2011 |
| 20110318919 | SURFACE TREATMENT FOR A FLUOROCARBON FILM - A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step. | 12-29-2011 |
| 20110315318 | FOCUS RING AND MANUFACTURING METHOD THEREFOR - There is provided a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The focus ring is arranged to surround a periphery of a substrate mounted on the mounting table having a temperature control device. Further, the focus ring includes a flexible heat transfer sheet. Furthermore, the focus ring is in contact with the mounting table via the heat transfer sheet, and the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface. | 12-29-2011 |
| 20110315169 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS - In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. | 12-29-2011 |
| 20110312192 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed. | 12-22-2011 |
| 20110312190 | COATING METHOD AND COATING APPARATUS - A coating method based on such a technique includes a prewetting step of supplying a prewetting liquid to the center of a substrate (W) and rotating the substrate thereby spreading the prewetting liquid over the whole surface of a first substrate, and a coating film forming step of supplying a coating solution (e.g., a resist solution) to the substrate supplied with the prewetting liquid and drying the coating solution thereby forming a coating film on the surface of the first substrate. The prewetting liquid used is a mixed liquid obtained by mixing a solvent capable of dissolving components of the coating film (e.g., components of resist) and a high surface tension liquid having a surface tension higher than that of the solvent, the mixed liquid having a surface tension higher than that of the coating solution. | 12-22-2011 |
| 20110312188 | PROCESSING APPARATUS AND FILM FORMING METHOD - A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means. | 12-22-2011 |
| 20110309849 | INSPECTION METHOD FOR INSPECTING ELECTRIC CHARACTERISTICS OF DEVICES FORMED ON TARGET OBJECT - An inspection method for inspecting electric characteristics of devices formed on a target object using an apparatus including a vertical drive mechanism for lifting and lowering a movable mounting table and a control unit for controlling the vertical drive mechanism. The vertical drive mechanism includes an elevation shaft connected to the mounting table and a servo motor for driving the elevation shaft to lift and lower the mounting table. The control unit has a servo driver including a position control part for controlling a position of the motor, a torque control part for controlling a torque of the motor as a probe card is expanded or contracted by a change in temperature and a switching part for switching the position control part and the torque control part. The method includes heating or cooling the target object, controlling a position of the motor, and controlling a torque of the motor. | 12-22-2011 |
| 20110309562 | SUPPORT STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows from the bottom to the top or from the top to the bottom, includes: a top plate portion; a bottom portion; and a plurality of support posts connecting the top plate portion and the bottom portion. A plurality of support portions for supporting the objects to be processed are formed in each support post along the longitudinal direction, and the pitch of the support portions is set larger on the downstream side than on the upstream side in the flow direction of the processing gas. The support structure can enhance the in-plane uniformity of the thickness of a film formed on a processing object. | 12-22-2011 |
| 20110308733 | PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER SUPPORT DEVICE - There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount. | 12-22-2011 |
| 20110308549 | SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS - In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved. | 12-22-2011 |
| 20110308464 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM - Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates. | 12-22-2011 |
| 20110308067 | POSITIONING APPARATUS, A SUBSTRATE PROCESSING APPARATUS AND METHOD FOR FIXING A REFERENCE MEMBER - Provided is a positioning apparatus including: a reference member that is serving as a reference for positioning; a support part that supports the reference member; and a first fixing member provided on the support part that fixes the reference member and the support part or releases the fixing. The reference member is connected to the support part in a movable state and fixed to the support part by the first fixing member after a position is determined. The reference member of the positioning apparatus is precisely installed to a reference position. | 12-22-2011 |
| 20110307089 | METHOD AND SYSTEM FOR PERFORMING A CHEMICAL OXIDE REMOVAL PROCESS - A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH | 12-15-2011 |
| 20110306214 | Method of selectively etching an insulation stack for a metal interconnect - A method of patterning an insulation layer is described. The method includes preparing a film stack on a substrate, wherein the film stack comprises a cap layer, a SiCOH-containing layer overlying the cap layer, and a hard mask overlying the SiCOH-containing layer. The method further includes transferring a pattern through the film stack by performing a series of etch processes in a plasma etching system, wherein the series of etch processes utilize a temperature controlled substrate holder in the plasma etching system according to a substrate temperature control scheme that achieves etch selectivity between the SiCOH-containing layer and the underlying cap layer. | 12-15-2011 |
| 20110305831 | Method for chemical vapor deposition control - A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate. | 12-15-2011 |
| 20110303654 | Device to reduce shadowing during radiative heating of a substrate - A substrate heating apparatus configured to be coupled to a processing system and radiatively heat a substrate is described. The substrate heating apparatus comprises a radiative heat source coupled to a processing system and configured to produce electromagnetic (EM) radiation, a translucent object disposed between the radiative heat source and the substrate along an EM wave path there between, and an opaque object disposed between the radiative heat source and the substrate along the EM wave path there between. The translucent object comprises at least one textured surface to cause random refraction of the EM radiation passing through the translucent object, or an optical waveguide configured to encapsulate the opaque object and direct the EM radiation around the opaque object, or a combination thereof. | 12-15-2011 |
| 20110303643 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded. | 12-15-2011 |
| 20110303642 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM - A substrate processing system that can reliably prevent a rear surface of a substrate from getting scratched without bringing about a decrease in the throughput. A printing module connected to a loader module prints a protective film on the rear surface of the substrate before the substrate is subjected to plasma etching processing. A cleaning module connected to the loader module removes the protective film from the rear surface of the substrate after the substrate has been subjected to the plasma etching processing. | 12-15-2011 |
| 20110303364 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations. | 12-15-2011 |
| 20110303363 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus for plasma-processing a substrate by exciting a gas by the microwave includes a processing container formed of metal, a microwave source for outputting the microwave, a first dielectric member that faces an inner wall of the processing container and for transmitting the microwave output from the microwave source into the processing container, and a second dielectric member that is provided on an inner surface of the processing container and restrains the microwave from propagating along the inner surface of the processing container. | 12-15-2011 |
| 20110303362 | PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF - There is provided a plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high frequency antenna. The apparatus includes a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber in a space above the mounting table, and each gas nozzle has a gas discharge hole at a leading end of the gas nozzle in a protruding direction and a gas discharge hole at a sidewall of the gas nozzle. Further, the apparatus includes a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles and each central axis is extended in the protruding direction of each of the gas nozzles. | 12-15-2011 |
| 20110303152 | SUPPORT STRUCTURE, PROCESSING CONTAINER STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plurality of support posts connecting the top plate section and the bottom section, wherein a plurality of support portions for supporting the objects to be processed are formed in each support post at a predetermined pitch along the longitudinal direction, and the distance between the topmost support portion of the support portions of each support post and the top plate section as well as the distance between the lowermost support portion of the support portions of each support post and the bottom section are set not more than the pitch of the support portions. The support structure can prevent the occurrence of a turbulent gas flow in the top and bottom areas of the processing container structure. | 12-15-2011 |
| 20110303145 | Apparatus for chemical vapor deposition control - A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate. | 12-15-2011 |
| 20110300719 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film. | 12-08-2011 |
| 20110300717 | METHOD FOR CONTROLLING DANGLING BONDS IN FLUOROCARBON FILMS - Embodiments of the invention describe methods for forming fluorocarbon (CF) films for semiconductor devices. According to one embodiment, the method includes providing a substrate, depositing a CF film on the substrate, generating, in the absence of a plasma, a treatment gas containing a gaseous specie having a molecular dipole, and treating the CF film with the treatment gas containing the gaseous specie having the molecular dipole to reduce the number of dangling bonds in the CF film. According to some embodiments, the method further includes depositing a second CF film on the treated CF film. According to some embodiments, the CF films may be deposited using a microwave plasma source containing a radial line slot antenna (RLSA). | 12-08-2011 |
| 20110298465 | PROCESS MONITOR AND SEMICONDUCTOR MANUFACTURING APPARATUS - A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor. | 12-08-2011 |
| 20110297257 | SUBSTRATE LIQUID PROCESSING APPARATUS, METHOD OF CONTROLLING SUBSTRATE LIQUID PROCESSING APPARATUS, AND STORAGE MEDIUM PERFORMING SUBSTRATE LIQUID PROCESSING APPARATUS CONTROL METHOD ON SUBSTRATE LIQUID PROCESSING APPARATUS - A substrate liquid processing apparatus includes a placement table configured to hold a substrate, a rotary driving unit configured to rotate the placement table, a liquid supply unit configured to supply a liquid to the substrate placed on the placement table, and an upper liquid guide cup, a central liquid guide cup, and a lower liquid guide cup which are disposed in this order from the top and are configured to guide downward the liquid scattering from the rotating substrate being placed on the placement table. A driving mechanism is configured to move up and down the upper liquid guide cup, the central liquid guide cup, and the lower liquid guide cup. The driving mechanism is connected to the central liquid guide cup. | 12-08-2011 |
| 20110297192 | SUBSTRATE LIQUID PROCESSING APPARATUS - A substrate liquid processing apparatus of the present invention includes a process-liquid supply unit selectively supplying a plurality of types of process-liquids to the substrate held by a substrate holding table, first and second guide cups which are disposed in this order from the top and are configured to respectively guide downward the process-liquid scattering from the rotating substrate while being held by the substrate holding table; and a position adjustment mechanism adjusting a positional relationship between the first and second guide cups and the substrate holding table. A first process-liquid recovery tank is provided at a lower area of the first and second guide cups and recovers the process-liquid guided by the first guide cup. A second process-liquid recovery tank is provided at the inner peripheral side of the first process-liquid recovery tank and recovers the process-liquid guided by the second guide cup. | 12-08-2011 |
| 20110297085 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM - A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier. | 12-08-2011 |
| 20110296707 | SUBSTRATE PROCESSING METHOD, AND PROGRAM STORAGE MEDIUM THEREFOR - A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control. | 12-08-2011 |
| 20110294232 | METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. | 12-01-2011 |
| 20110293401 | TURBOMOLECULAR PUMP, AND PARTICLE TRAP FOR TURBOMOLECULAR PUMP - A turbomolecular pump includes: a rotor ( | 12-01-2011 |
| 20110292356 | SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD - Provided is a substrate processing system including a group controller which determines a combination of processing apparatuses having the shortest total processing time including the processing end time in a final processing apparatus, determines a predictable elapsed time up to a processing start time by a predetermined downstream processing apparatus for a wafer lot from a processing end time of the wafer lot by a predetermined processing apparatus in the combination of the processing apparatuses, and determines a timing of discharging the substrate to the predetermined processing apparatus or an upstream processing apparatus of the predetermined processing apparatus so that the predictable elapsed time is set within a predetermined time when the predictable elapsed time exceeds the predetermined time. | 12-01-2011 |
| 20110290419 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrode | 12-01-2011 |
| 20110290280 | SUBSTRATE PROCESSING METHOD AND NON-TRANSITORY STORAGE MEDIUM FOR CARRYING OUT SUCH METHOD - Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture. | 12-01-2011 |
| 20110290279 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD - A substrate processing apparatus according to the present invention includes a process tank including a pair of opposed sidewalls, storing a chemical liquid therein and processing a plurality of substrates by the chemical liquid; a substrate holding mechanism including a holding part holding the plurality of substrates, and a back part connected to the holding part and interposed between the substrates held by the holding part and one of the pair of sidewalls when the substrate holding mechanism is loaded into the process tank. A heating device is disposed on the process tank and heats the stored chemical liquid. The heating device includes a first heating device disposed on the one sidewall, and a second heating device disposed on the other sidewall. Outputs of the first heating device and the second heating device are independently controlled. | 12-01-2011 |
| 20110287631 | PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base material, and can improve yield and productivity. The plasma processing apparatus includes a processing chamber, a lower electrode, an upper electrode, and a plurality of lifter pins for supporting a substrate to be processed. Each of the lifter pins includes a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part. The lower electrode includes through-holes for lifter pins each of which includes a pin body receiving part, which has an inner diameter less than the outer diameter of the lid part and receives the pin body part, and a lid receiving part, which is formed in an upper portion of the pin body receiving part and receives the cover portion, and in which the lifter pins are disposed. In a state where the lifter pins are lowered, the lid part is received in the lid receiving part, and the upper portion of the pin body receiving part is blocked by the lid part. | 11-24-2011 |
| 20110287629 | SILICON FILM FORMATION METHOD AND SILICON FILM FORMATION APPARATUS - A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon. | 11-24-2011 |
| 20110287172 | SUBSTRATE PROCESSING APPARATUS, CONTROL DEVICE THEREOF, AND CONTROL METHOD THEREOF - A process gas supply cycle pattern that will adversely affect the result of processing is changed beforehand. Based on information supplied from a setting input section, a pattern computation section obtains the result of computation of a process gas supply cycle pattern that includes a rotation cycle of a substrate rotation mechanism, a supply cycle of a process gas, a supply time of the process gas, and a supply count of the process gas. Based on information supplied from the setting input section, a simulator simulates the shape of a supply region of the process gas to be supplied onto a substrate. A comparison section compares the result of computation of the process gas supply cycle pattern determined by the pattern computation section against the result of referencing of a process gas supply cycle pattern that adversely affects the result of processing and is obtained from a storage section. | 11-24-2011 |
| 20110286738 | WET-PROCESSING APPARATUS - A wet-processing apparatus, which spouts a coating liquid onto a surface of a substrate of a substrate, includes: nozzles provided with passages for the coating liquid; a light source which illuminates an area between a plane containing the tips of the nozzles and the surface of the substrate; a camera for forming an image of the area; a control unit which provides a spout signal requesting spouting the liquid from the nozzle toward the substrate, and an imaging signal requesting the camera to start an imaging operation; and a decision unit which decides whether or not the liquid was spouted from the nozzle and whether or not changes occurred in the condition of the liquid spouted from the nozzle toward the substrate on the basis of an image formed by the camera and expressing the brightness of the liquid spouted toward the substrate and illuminated by light emitted by the light source. | 11-24-2011 |
| 20110284165 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus that is capable of promoting improvement of in-plane uniformity of a process compared to a conventional technology, promoting miniaturization of the apparatus and improvement of processing efficiency, and easily changing an interval between an upper electrode and a lower electrode. The plasma processing apparatus includes a lower electrode provided in a processing chamber; an upper electrode having a function of a shower head and capable of moving up and down; a lid provided at an upper side of the upper electrode and airtightly blocking an upper opening of the processing chamber; a plurality of exhaust holes formed on a facing surface of the upper electrode; an annular member capable of moving up and down with the upper electrode by being formed to protrude downward along a circumferential portion of the upper electrode, and forming a processing space surrounded by the lower electrode, the upper electrode, and the annular member at a descending location; and a coil disposed on an inner wall portion of the annular member and accommodated in a container formed of a dielectric material. | 11-24-2011 |
| 20110283942 | FILM FORMING APPARATUS AND GAS INJECTION MEMBER - A film forming apparatus includes: a chamber for holding a wafer; a susceptor on which the wafer is placed within the chamber; heaters which heat the wafer placed on the susceptor; and a shower plate disposed opposite to the susceptor to inject a film formation processing gas toward the wafer, a main body of the shower plate being made of aluminum or an aluminum alloy. With the apparatus, a film is deposited on the surface of the wafer, the film having a low thermal expansion coefficient, measured at the film deposition temperature, lower by at least about 5×10 | 11-24-2011 |
| 20110282484 | SUBSTRATE POSITIONING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE POSITIONING METHOD, AND COMPUTER READABLE MEDIUM HAVING A PROGRAM STORED THEREON - Disclosed is a substrate positioning apparatus capable of accurately performing positioning of a center of a circular-shape substrate with respect to a rotating shaft. The substrate positioning apparatus includes: a substrate disposing part; a first positioning mechanism including a first reference part contacting a side of the substrate; a second positioning mechanism including a second reference part contacting the side of the substrate; a first driver configured to drive the first positioning mechanism; a controller configured to control the drive of the first positioning mechanism. In particular, the second reference part contacts the substrate at a contact part and includes an elastic part that applies force in a moving direction of the first driver to the contact part and a detector that detects position information of the second positioning mechanism. | 11-17-2011 |
| 20110281443 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O | 11-17-2011 |
| 20110281377 | METHOD FOR SEPARATING AND TRANSFERRING IC CHIPS - [Problems] There are provided a chip separation method and a chip transfer method using features of dry etching. | 11-17-2011 |
| 20110281376 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM RECORDING PROGRAM - Disclosed is a substrate processing apparatus including: a substrate processing unit that performs substrate processing by supplying a processing liquid to a substrate to be processed; a positioning mechanism that contacts the sides of the substrate to determine the position of the substrate; a positioning driver that drives the positioning mechanism; a detector that detects the position of the positioning mechanism; a storage unit that stores the position of the positioning mechanism with respect to a reference substrate serving as a reference of the substrate as a reference position information; and an operator that calculates a difference between the reference position information and the position information of the positioning mechanism detected in the detector and calculates measurement information on the processed substrate based on the difference. | 11-17-2011 |
| 20110278205 | METHOD AND APPARATUS OF CONVEYING OBJECTS TO BE PROCESSED AND COMPUTER-READABLE STORAGE MEDIUM STORING PROGRAM - A method and an apparatus of simply and rapidly conveying objects having no detected abnormalities, and a computer-readable storage medium storing a program for use in the conveying method and apparatus. When abnormalities on semiconductor wafers in a wafer boat are detected, abnormality positions and types of abnormalities are identified and skip positions are determined (Step S | 11-17-2011 |
| 20110277847 | FLOW CONTROL METHOD FOR MULTIZONE GAS DISTRIBUTION - A method of supplying and controlling the flow of a process gas to a process chamber. The method includes initiating a known flow rate of a process gas to a process chamber, dividing the known flow rate of the process gas into a first flow of the process gas at a first flow rate and a second flow of the process gas at a second flow rate, measuring a first pressure associated with the first flow of the process gas, measuring a second pressure associated with the second flow of the process gas, and controlling the first flow rate and the second flow rate according to a target flow condition by adjusting a first conductance of the first flow of the process gas and a second conductance of the second flow of the process gas and monitoring the first pressure and the second pressure. | 11-17-2011 |
| 20110277793 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND COMPUTER-READABLE STORAGE MEDIUM STORING LIQUID PROCESSING PROGRAM - There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. | 11-17-2011 |
| 20110272100 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, FOCUS RING, AND FOCUS RING COMPONENT - When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a lower surface of a peripheral edge portion of the substrate to be processed placed on the mounting table is formed under the peripheral edge portion of the substrate to be processed, and the ions consequently collide with the lower surface of the peripheral edge portion, which reduces the occurrence of deposition. | 11-10-2011 |
| 20110270465 | TEMPERATURE SETTING METHOD OF HEAT PROCESSING PLATE, TEMPERATURE SETTING APPARATUS OF HEAT PROCESSING PLATE, PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDING PROGRAM THEREON - An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured during a heat processing period from immediately after a temperature measuring wafer is mounted on the heating plate to the time when the actual heat processing time elapses. Whether the uniformity in temperature within the wafer is allowable or not is determined from the temperature of the wafer in the heat processing period, and if the determination result is negative, a correction value for a temperature setting parameter of the heating plate is calculated using a correction value calculation model from the measurement result, and the temperature setting parameter is changed. | 11-03-2011 |
| 20110269315 | THIN FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature. | 11-03-2011 |
| 20110269078 | SUBSTRATE TREATMENT TO REDUCE PATTERN ROUGHNESS - A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface | 11-03-2011 |
| 20110269061 | DEVELOPING METHOD - Disclosed is a developing method that performs a developing for forming a second resist pattern after forming and exposing a resist film on a surface of a substrate on which a first resist pattern is formed. The method includes a first process for developing the substrate for a first time period t | 11-03-2011 |
| 20110268872 | FILM FORMATION METHOD FOR FORMING HAFNIUM OXIDE FILM - A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature. | 11-03-2011 |
| 20110268870 | FILM FORMING APPARATUS AND FILM FORMING METHOD - In an apparatus for film formation, constituted so that an organic EL molecular gas is ejected into an ejection vessel, a plurality of organic EL material vessels are provided together with a piping system for connecting the plurality of organic EL material vessels to the ejection vessel. The plurality of organic EL material vessels are selectively put into a supply state of organic EL molecules. The piping system is constructed so that the carrier gas is fed into each organic EL material vessel in such a manner that the pressure during film formation and the pressure during non-film formation are equal to each other. During non-film formation, the carrier gas is allowed to flow from one of the organic EL material vessels to other material vessel. | 11-03-2011 |
| 20110268511 | SUBSTRATE CARRYING DEVICE, SUBSTRATE CARRYING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - The substrate carrying device includes a carrying passage forming member forming a carrying passage along which a substrate is carried, exhaust grooves extending parallel to the carrying passage in the upper surface of the carrying passage forming member, a plurality of pairs each of right and left carrying gas flow grooves formed in the upper surface of the carrying passage forming member, inclined to a substrate carrying direction so as to approach the exhaust grooves from the right-hand side and the left-hand side of the exhaust grooves, respectively, and having inner ends joined to the exhaust grooves, respectively, and gas spouting pores formed near outer ends of the carrying gas flow grooves to spout a gas for causing the substrate to float and for creating substrate carrying gas flows flowing from the outer ends of the carrying gas flow grooves toward the inner ends of the carrying gas flow grooves. | 11-03-2011 |
| 20110266257 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less. | 11-03-2011 |
| 20110265952 | MICROWAVE PLASMA PROCESSING DEVICE AND GATE VALVE FOR MICROWAVE PLASMA PROCESSING DEVICE - A gate valve includes a plate-shaped valve element which is rectangular-shaped to suit the shape of an opening of a processing chamber and has a size larger than the opening. A hermetically sealing member to perform hermetic sealing by abutting on and being pressed against an outer side of the processing chamber is provided in the valve element. A microwave reflecting mechanism which is formed in a groove shape so as to surround a periphery of the hermetically sealing member is provided at an outer peripheral portion of the hermetically sealing member. | 11-03-2011 |
| 20110265950 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TARGET SUBSTRATE PROCESSING SYSTEM - A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film. | 11-03-2011 |
| 20110265896 | PROCESS LIQUID FEED MECHANISM - A process liquid feed mechanism includes a fixed cylinder with a thread around a peripheral surface, a movable cylinder provided coaxially with the fixed cylinder, a process liquid feed tube and an operating rotator. The movable cylinder is screw-engaged to the fixed cylinder. The process liquid feed tube is fixed in an axial position relative to the movable cylinder and passes through the lid and a cylinder including the fixed cylinder and the movable cylinder to be axially movable relative to the cylinder. The operating rotator includes an annular portion provided coaxially with the movable cylinder. An engaging portion and an engaged portion, which are provided in the movable cylinder and the annular portion respectively, rotate the movable cylinder through engagement therebetween with rotation of the operating rotator and release the engagement as a torque on the movable cylinder increases. | 11-03-2011 |
| 20110265895 | GAS SUPPLY APPARATUS FOR SEMICONDUCTOR MANUFACTURING APPARATUS - There is provided a gas supply apparatus | 11-03-2011 |
| 20110265725 | FILM DEPOSITION DEVICE AND SUBSTRATE PROCESSING DEVICE - A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a linear transport path in which the substrate mounting parts are transported linearly. A first reactive gas supplying part is arranged along a transporting direction in which the substrate mounting parts are transported in the linear transport path, to supply a first reactive gas to the substrate mounting parts. A second reactive gas supplying part is arranged alternately with the first reactive gas supplying part along the transporting direction, to supply a second reactive gas to the substrate mounting parts. A separation gas supplying part is arranged to supply a separation gas to a space between the first reactive gas supplying part and the second reactive gas supplying part. | 11-03-2011 |
| 20110265718 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD - A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism. | 11-03-2011 |
| 20110264250 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM STORING PROGRAM - A substrate processing system includes a controller that outputs a control signal for controlling a substrate processing apparatus; and a software interlock component that outputs an interlock signal if a predetermined interlock condition is satisfied. In the substrate processing apparatus, a multiple number of devices of the same kind are provided and each device is selected to be either an interlocked state or a non-interlocked state with other devices. The software interlock component outputs an interlock signal to any one of the multiple number of devices of the same kind if it is determined that the multiple number of devices satisfy the predetermined interlock condition. If any one of the multiple number of devices of the same kind receives the interlock signal, the multiple number of devices are interlocked according to an instruction of the interlock signal regardless of an interlocked state or a non-interlocked state of the devices. | 10-27-2011 |
| 20110263123 | PLACING TABLE STRUCTURE - Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition restraint gas supply means which is arranged in the placing table for the purpose of supplying decomposition restraint gas, which restraints thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table. | 10-27-2011 |
| 20110263105 | AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS - The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group. | 10-27-2011 |
| 20110262623 | COATER/DEVELOPER, METHOD OF COATING AND DEVELOPING RESIST FILM, AND COMPUTER READABLE STORING MEDIUM - A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised. | 10-27-2011 |
| 20110259523 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes a processing chamber; a microwave source that outputs a microwave; a dielectric plate that radiates the microwave output from the microwave source to the inside of the processing chamber; and a metal electrode provided on the side of a plasma-facing surface of the dielectric plate so as to be adjacent to the dielectric plate. Here, a part of the dielectric plate is exposed to the inside of the processing chamber at an outside of the metal electrode. Further, a cell area is defined as a virtual area that divides the ceiling surface of the processing chamber and is formed by two straight lines parallel to one diagonal line of the metal electrode and two straight lines parallel to the other diagonal line of the metal electrode and the cell area is a minimum rectangular area including the metal electrode and the dielectric plate. | 10-27-2011 |
| 20110259521 | SUBSTRATE TREATMENT APPARATUS - The density of a treatment fluid in exhaust gas is reduced, the amount of the treatment fluid that flows into exhausting equipment connected to a substrate treatment apparatus is reduced, and a load on the exhausting equipment is reduced. A substrate treatment apparatus includes: a substrate treating unit that treats a substrate; a treatment fluid supply unit that supplies, to the substrate treating unit, a treatment fluid used to treat the substrate; and an exhaust gas treating unit into which an exhaust gas containing the treatment fluid discharged from the substrate treating unit is introduced. The exhaust gas treating unit includes spray nozzles that spray a solvent toward the exhaust gas, the solvent dissolving the treatment fluid, thereby reducing the density of the treatment fluid in the exhaust gas. The exhaust gas treating unit has porous dispersion plates that cause the exhaust gas to disperse. | 10-27-2011 |
| 20110257783 | SUBSTRATE TRANSFER METHOD AND SUBSTRATE TRANSFER APPARATUS - A substrate transfer method of delivering a substrate transferred by a transfer arm to a mounting unit and associated apparatus. The method includes moving the transfer arm to a position above the mounting unit, and, when delivering the substrate onto the mounting unit, detecting a mounting portion of the mounting unit by a mounting portion detector having a light emitting element and a light receiving element provided at opposite positions across a center point of the transfer arm on a bottom surface of the transfer arm, and then lowering the transfer arm in an oblique direction to mount the substrate on the mounting unit. | 10-20-2011 |
| 20110254078 | METHOD FOR DEPOSITING SILICON NITRIDE FILM, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a method for depositing a silicon nitride film in a plasma CVD device which introduces microwaves into a process chamber by a planar antenna having a plurality of apertures, and the method including setting the pressure in the process chamber within a range from 10 Pa to 133.3 Pa and performing plasma CVD by using film formation gas including a silicon containing compound gas and a nitrogen gas while applying an RF bias to the wafer by supplying high-frequency power with an output density within a range from 0.009 W/cm | 10-20-2011 |
| 20110253311 | SUBSTRATE PROCESSING APPARATUS FOR PERFORMING PLASMA PROCESS - A substrate processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate. The apparatus includes a gas feed passage configured to supply a process gas into the process container and an exhaust passage configured to exhaust gas from inside the process container. The apparatus further includes a plasma generation mechanism configured to generate plasma of the process gas inside the process container and a metal component to be exposed to plasma inside the process container. The metal component is provided with a silicon film that coats at least a portion thereof to be exposed to plasma and to suffer an intense electric filed generated thereabout. | 10-20-2011 |
| 20110250765 | COATING TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND COATING TREATMENT APPARATUS - A coating treatment method includes: a first step of discharging a coating solution from a nozzle to a central portion of a substrate while acceleratingly rotating the substrate, to apply the coating solution over the substrate; a second step of then decelerating the rotation of the substrate and continuously rotating the substrate; and a third step of then accelerating the rotation of the substrate to dry the coating solution on the substrate. In the first step, the acceleration of the rotation of the substrate is changed in the order of a first acceleration, a second acceleration higher than the first acceleration, and a third acceleration lower than the second acceleration to acceleratingly rotate the substrate at all times. | 10-13-2011 |
| 20110250761 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14. | 10-13-2011 |
| 20110248024 | HEAT TREATMENT APPARATUS - In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit. | 10-13-2011 |
| 20110247759 | FOCUS RING AND SUBSTRATE MOUNTING SYSTEM - A focus ring surrounds an outer periphery of a substrate mounted on a mounting table having a temperature control mechanism and includes a contact surface which comes into contact with the mounting table and a heat transfer sheet formed on the contact surface. The heat transfer sheet contains an organic material and a heat transfer material mixed with the organic material, and has a film thickness larger than or equal to about 40 μm and smaller than about 100 μm. | 10-13-2011 |
| 20110247662 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus capable of drying a substrate to be processed while suppressing the pattern collapse or the occurrence of contamination. A substrate is held in a liquid bath while being immersed in a liquid, and the liquid bath is disposed in a processing space of a processing vessel. A processing of drying the substrate is performed by replacing the liquid in the liquid bath with a supercritical-state fluid. A predetermined mechanism moves liquid bath between a processing location in the processing case and a stand-by location outside the processing case. A heater installed in the processing case changes the fluid to a supercritical state or maintains the supercritical state while cooling mechanisms cool down the liquid bath moved to the stand-by location outside the processing vessel. | 10-13-2011 |
| 20110247659 | FILM REMOVING DEVICE AND FILM REMOVING METHOD - A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface. | 10-13-2011 |
| 20110247560 | SUBSTRATE PROCESSING APPARATUS - A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in order to oppose the substrate supporting portion, and configured to produce a reaction gas by allowing a source gas introduced from a gas introduction portion to contact a catalyst and to eject the reaction gas to an inner space of the reaction chamber, thereby processing the substrate supported by the substrate supporting portion with the ejected reaction gas. | 10-13-2011 |
| 20110246400 | SYSTEM FOR OPTICAL METROLOGY OPTIMIZATION USING RAY TRACING - Provided is a system for determining profile parameters of a sample structure on a workpiece using an optical metrology system optimized to achieve one or more accuracy targets. The optical metrology system comprises an optical metrology tool configured to measure a diffraction signal off a sample structure, an optical metrology tool model configured to model the optical metrology tool using a selected number of rays and selected beam propagation parameters for the illumination beam and the diffraction beam; a signal adjuster configured to adjust the measured diffraction signal off the sample structure using the optical metrology tool model and calibration parameters, the signal adjuster generating an adjusted metrology output signal; and a profile extractor configured to determine one or more profile parameters of the sample structure using the adjusted metrology output signal, a profile model of the sample structure, and one or more extraction modules. | 10-06-2011 |
| 20110246142 | OPTIMIZATION OF RAY TRACING AND BEAM PROPAGATION PARAMETERS - Provided is a method for determining profile parameters of a sample structure on a workpiece using an optical metrology system optimized to achieve one or more accuracy targets, the optical metrology system including an optical metrology tool, an optical metrology tool model, a profile model of the sample structure, and a parameter extraction algorithm, the method comprising: setting one or more accuracy targets for profile parameter determination for the sample structure; selecting a number of rays and beam propagation parameters to be used to model the optical metrology tool, measuring a diffraction signal off the sample structure using the optical metrology tool, generating a metrology output signal, determining an adjusted metrology output signal using the metrology output signal and calibration data, concurrently optimizing the optical metrology tool model and the profile model using the adjusted metrology output signal and the parameter extraction algorithm. | 10-06-2011 |
| 20110246141 | METHOD OF OPTICAL METROLOGY OPTIMIZATION USING RAY TRACING - Provided is a method for determining a profile of a sample structure on a workpiece using an optical metrology system that includes an optical metrology tool, an optical metrology model, and a profile extraction algorithm. The method comprises selecting a number of rays for the illumination beam, selecting beam propagation parameters, and using a processor, determining beam propagation parameters for each ray of the selected number of rays, determining the beam propagation parameters for each ray, calculating intensity and polarization of each ray, calculating total intensity and polarization of the diffraction beam, calculating a metrology output signal, extracting one or more profile parameters using the metrology output signal, calibration data, and a profile extraction algorithm. | 10-06-2011 |
| 20110245955 | AUTOMATED PROCESS CONTROL USING AN ADJUSTED METROLOGY OUTPUT SIGNAL - Provided is a method for controlling a fabrication cluster using an optical metrology system that includes an optical metrology tool, an optical metrology model, and a profile extraction algorithm. The method comprises: selecting a number of rays for the illumination beam, selecting beam propagation parameters, using a processor, determining beam propagation parameters from the light source of the to the sample structure, determining the beam propagation parameters from the sample structure to the detector, calculating intensity and polarization of each ray on the detector, generating a total intensity and polarization of the diffraction beam, calculating a metrology output signal from the total intensity and polarization, extracting the one or more profile parameters using the metrology output signal, transmitting at least one profile parameter to a fabrication cluster, and adjusting at least one process parameter or equipment setting of the fabrication cluster. | 10-06-2011 |
| 20110244691 | ETCHING PROCESSING METHOD - An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated. | 10-06-2011 |
| 20110244680 | SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES - A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal-containing cap layers selectively on the metal surfaces by exposing the dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor. The removing includes treating the planarized patterned substrate containing the residue with a reactant gas containing a hydrophobic functional group, and exposing the treated planarized patterned substrate to a reducing gas. | 10-06-2011 |
| 20110244403 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS - A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then developed to remove either a region having high radiation exposure or a region having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines. | 10-06-2011 |
| 20110244402 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS - A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines. | 10-06-2011 |
| 20110244391 | COMPOSITION AND METHOD FOR REDUCING PATTERN COLLAPSE - A radiation-sensitive composition and method for using the composition to reduce the probability of pattern collapse is provided. The radiation-sensitive composition includes a bulk matrix of radiation-sensitive material with a base-reactive, surface-modifying agent dispersed throughout the matrix. The base-reactive, surface-modifying agent is reactive to hydroxide and increases the surface hydrophobicity of a pattern formed in a layer of the radiation-sensitive composition upon treatment with a basic developing solution during lithographic processing of a substrate. | 10-06-2011 |
| 20110244128 | FLOW PLATE UTILIZATION IN FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION - A filament assisted chemical vapor deposition (FACVD) system. The FACVD system includes a gas distribution assembly, heater filament assembly, and a flow plate that is disposed between the gas distribution assembly and the heater filament assembly. The heater filament assembly and the flow plate have a corresponding extent across a dimension of the reactor and are separated by different distances across that extent. | 10-06-2011 |
| 20110242513 | SUBSTRATE PROCESSING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND SUBSTRATE PROCESSING SYSTEM - A processing temperature of thermal processing is corrected based on measurement of a first dimension of a resist pattern on a substrate from a previously obtained relation between a dimension of a resist pattern and a temperature of thermal processing, a second dimension of the resist pattern after thermal processing is performed at the corrected processing temperature is measured, a distribution within the substrate of the second dimension is classified into a linear component expressed by an approximated curved surface and a nonlinear component, a processing condition of exposure processing is corrected based on the linear component from a previously obtained relation between a dimension of a resist pattern and a processing condition of exposure processing, and thermal processing at the processing temperature corrected in a temperature correcting step and exposure processing under the processing condition corrected in an exposure condition correcting step are performed to form a predetermined pattern. | 10-06-2011 |
| 20110242510 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE SURFACE PROCESSING APPARATUS, SUBSTRATE SURFACE INSPECTING APPARATUS, SUBSTRATE SURFACE INSPECTING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD - A substrate processing system which enables a minute piece of foreign matter attached to a substrate surface to be detected and are suitable for mass production of substrates. The substrate processing system has a substrate processing apparatus that carries out predetermined processing on a substrate. The substrate processing system comprises a substrate surface processing apparatus having a fluid supply unit that supplies onto a surface of the substrate a fluid containing an altering substance that alters a substance exposed at the surface of the substrate, and a substrate surface inspecting apparatus that inspects the surface of the substrate onto which the fluid has been supplied. | 10-06-2011 |
| 20110242508 | INTERFACE SYSTEM - An interface system includes: a first transfer chamber having a closable first transfer opening through which a substrate is transferred between the first transfer chamber and an exposure system and capable of being evacuated to a reduced pressure; a plurality of load-lock chambers each having a second transfer opening through which a substrate is transferred between the load-lock chamber and the first transfer chamber, and a third transfer opening through which a substrate is transferred between the load-lock chamber and the coating and developing system; a plurality of heating modules for heating a substrate, each having a fifth transfer opening through which a substrate is transferred between the same heating module; and a plurality of cooling modules for cooling a substrate, each having a sixth transfer opening through which a substrate is transferred between the same cooling module and the second transfer chamber. | 10-06-2011 |
| 20110241128 | MULTILAYER SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE - A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure. | 10-06-2011 |
| 20110241085 | DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE - A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer. | 10-06-2011 |
| 20110240599 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply. | 10-06-2011 |
| 20110240598 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus | 10-06-2011 |
| 20110240597 | SUBSTRATE TREATMENT METHOD, COATING FILM REMOVING APPARATUS, AND SUBSTRATE TREATMENT SYSTEM - According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing. | 10-06-2011 |
| 20110240224 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber. | 10-06-2011 |
| 20110240223 | SUBSTRATE PROCESSING SYSTEM - There is provided a substrate processing system having high maintainability by widening a gap between various processing apparatuses connected with side surfaces of transfer modules and capable of achieving sufficient productivity by avoiding deterioration in throughput. The substrate processing system for manufacturing an organic EL device by forming a multiple number of layers including, e.g., an organic layer on a substrate includes at least one transfer module configured to be evacuable and arranged along a straight transfer route. Within the transfer module, a multiple number of loading/unloading areas for loading/unloading the substrate with respect to a processing apparatus and at least one stocking area positioned between the loading/unloading areas are alternately arranged along the transfer route in series, and the processing apparatus is connected with a side surface of the transfer module at a position facing each of the loading/unloading areas. | 10-06-2011 |
| 20110240222 | PLASMA PROCESSING APPARATUS - A gas shower head having many gas discharging ports formed on the lower surface is provided on the top wall of a processing container such that the gas shower head faces a placing table on which a substrate is to be placed, and the top wall of the processing container at the periphery of the gas shower head is composed of a dielectric material. A coil is provided on the dielectric material, and the phase of high frequency waves to be supplied to the gas shower head and the coil is adjusted so that the phase of the electrical field in a processing region above the substrate and the phase of the electrical field in the peripheral region surrounding the processing region are same or opposite to each other. | 10-06-2011 |
| 20110240221 | PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference. | 10-06-2011 |
| 20110240066 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - Disclosed is a substrate processing apparatus capable of drying a substrate to be processed while suppressing a pattern collapse or occurrence of contamination. In a processing vessel, a substrate is immersed in a liquid in the longitudinal direction, and the liquid is pushed out by a substitution fluid of a supercritical state to be discharged from the processing vessel. Thereafter, the substitution fluid subjected to the substitution with the liquid is discharged from the processing vessel to depressurize the processing vessel, and the substitution fluid is changed from the supercritical state to a gaseous state to dry the substrate. | 10-06-2011 |
| 20110239167 | Simplified Micro-Bridging and Roughness Analysis - The invention provides apparatus and methods for processing substrates using pooled statistically based variance data. The statistically based variance data can include Pooled Polymer De-protection Variance (PPDV) data that can be used to determine micro-bridging defect data, LER defect data, and LWR defect data. | 09-29-2011 |
| 20110238201 | VACUUM PROCESSING APPARATUS AND VACUUM TRANSFER APPARATUS - Transfer capability is improved without having to extend a longitudinal space of a platform of a cluster tool downward. In a platform PF, a first transfer robot | 09-29-2011 |
| 20110237088 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND COMPUTER-READABLE RECORDING MEDIUM RECORDING PROGRAM THEREON - In the present invention, the position of a substrate on a thermal plate is detected when baking after exposure is performed in a first round of patterning. In a second round of patterning, the setting position of the substrate is adjusted based on a detection result of the position before the substrate is mounted on the thermal plate in the baking after exposure. In the baking after exposure in the second round of patterning, the substrate is mounted at the same position with respect to the thermal plate as that in the baking after exposure in the first round of patterning. In performing a plurality of rounds of patterning on a film to be processed, a pattern with a desired dimension is finally formed above the substrate, and the uniformity of the pattern dimension within the substrate is ensured. | 09-29-2011 |
| 20110237084 | Differential metal gate etching process - A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F. | 09-29-2011 |
| 20110237083 | SUBSTRATE PROCESSING METHOD - Disclosed is a substrate processing method configured to prevent the occurrence of a bowing shape to form a hole of a vertical processing shape on a mask layer, and to secure a remaining layer quantity as the mask layer. The substrate processing method receives a wafer W in which a mask layer and an intermediate layer are stacked on a target layer to be processed in a chamber, generates plasma of processing gas in the chamber, performs an etching process on wafer W using the plasma, thereby forming a pattern shape on the target layer to be processed through the intermediate layer and the mask layer. The etching process etches the mask layer by applying excitation power of 500 W for generating plasma, maintaining processing pressure at 5 mTorr (9.31×10 | 09-29-2011 |
| 20110237082 | MICRO PATTERN FORMING METHOD - There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film. | 09-29-2011 |
| 20110237080 | Method for integrating low-k dielectrics - A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation. | 09-29-2011 |
| 20110237076 | FILM-FORMING METHOD AND FILM-FORMING APPARATUS - A film forming method includes arranging a target substrate to be processed in a chamber; supplying a processing gas including a chlorine containing gas through a supply path to the chamber in which the target substrate is arranged; and arranging a Ti containing unit in the supply path of the processing gas and making a reaction between the chlorine containing gas of the processing gas and Ti of the Ti containing unit by bringing the chlorine containing gas into contact with the Ti containing unit, when the processing gas is supplied to the chamber. The method further includes depositing Ti on a surface of the target substrate by a thermal reaction by supplying to the target substrate a Ti precursor gas produced by the reaction between the chlorine containing gas and Ti of the Ti containing unit while heating the target substrate provided in the chamber. | 09-29-2011 |
| 20110237066 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess. | 09-29-2011 |
| 20110236845 | HEAT PROCESSING APPARATUS AND HEAT PROCESSING METHOD - A heat processing apparatus includes a heating plate configured to heat the substrate; a cover configured to surround a space above the heating plate; an exhaust gas flow forming mechanism configured to exhaust gas inside the cover to form exhaust gas flows within the space above the heating plate; a downflow forming mechanism configured to form downflows uniformly supplied onto an upper surface of the substrate placed on the heating plate; and a control mechanism configured to execute mode switching control between a mode arranged to heat the substrate while forming the downflows by the downflow forming mechanism and a mode arranged to heat the substrate while forming the exhaust gas flows by the exhaust gas flow forming mechanism. | 09-29-2011 |
| 20110236598 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O | 09-29-2011 |
| 20110235675 | SUBSTRATE MOUNTING TABLE - There is provided a substrate mounting table capable of accurately measuring a temperature of a wafer supported on the substrate mounting table without incurring contamination within a chamber and without forming a hole for measuring a temperature in the substrate mounting table. The substrate mounting table includes a mounting surface | 09-29-2011 |
| 20110235056 | METHOD FOR MEASURING WEAR RATE - A wear rate measurement method includes thermally coupling a focus ring having a top surface and a bottom surface with a reference piece having a bottom surface facing a susceptor and a top surface facing the focus ring; measuring a first optical path length of a low-coherence light beam that travels forward and backward within the focus ring by irradiating the low-coherence light beam to the focus ring orthogonally to the top surface and the bottom surface thereof; measuring a second optical path length of a low-coherence light beam that travels forward and backward within the reference piece by irradiating the low-coherence light beam to the reference piece orthogonally to the top surface and the bottom surface thereof; and calculating a wear rate of the focus ring based on a ratio between the first optical path length and the second optical path length. | 09-29-2011 |
| 20110234251 | PROBE CARD - A probe card installed in a probe device includes a supporting plate capable of supporting a contact body and a circuit board installed above a top surface of the supporting plate. A connection member is installed at a top surface of the circuit board and the supporting plate and the connection member are connected to each other by a connection body. Load control members are installed at a top surface of the connection member and capable of maintaining a contact load between the contact body and an object to be inspected at a constant level. Elastic members are installed at a peripheral portion of the connection member and capable of fixing a horizontal position of the supporting plate. An intermediate member is installed between the circuit board and the supporting plate and configured to elastically and electrically connect the circuit board and the supporting plate. | 09-29-2011 |
| 20110234247 | WAFER CHUCK INCLINATION CORRECTING METHOD AND PROBE APPARATUS - A method for correcting inclination of a wafer chuck includes obtaining in advance a correction amount for each of the semiconductor chips which corrects the inclination of the wafer chuck in the case of applying a contact load to at least each one of the semiconductor chips and storing each of the correction amounts in a data storage unit; calculating a total correction amount for correcting the inclination of the wafer chuck by calculating the correction amount of each of the semiconductor chips bringing into contact with the probes when the semiconductor wafer comes into electrical contact with the probes and adding the calculated correction amounts; and correcting the inclination of the wafer chuck based on the total correction amount. | 09-29-2011 |
| 20110233546 | WAFER-TYPE TEMPERATURE SENSOR AND MANUFACTURING METHOD THEREOF - A wafer-type temperature sensor may include a wafer for temperature detection; a circuit board bonded to one surface of the wafer for temperature detection; at least one temperature data detector provided on the one surface of the wafer for temperature detection and capable of detecting temperature data; and a temperature detecting unit mounted on the circuit board and capable of detecting a temperature of the wafer for temperature detection from the temperature data detected by the temperature data detector. Here, a difference between a linear expansion coefficient of the circuit board and a linear expansion coefficient of the wafer for temperature detection may be equal to or less than a predetermined value. | 09-29-2011 |
| 20110233430 | Ultraviolet treatment apparatus - A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate. | 09-29-2011 |
| 20110233187 | HEATING APPARATUS, HEATING METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A disclosed heating apparatus for heating a substrate on which a film is coated includes a process chamber having a gas supply opening for supplying a first gas to the process chamber and a gas evacuation opening for evacuating the first gas from the process chamber; a heating plate that is arranged in the process chamber and includes a heating element for heating the substrate; plural protrusions arranged on the heating plate so as to support the substrate; plural suction holes formed in the heating plate so as to attract by suction the substrate toward the heating plate; and a gas inlet adapted to supply a second gas to a gap between the heating plate and the substrate supported by the plural protrusions. | 09-29-2011 |
| 20110233170 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode. | 09-29-2011 |
| 20110232888 | ZONE TEMPERATURE CONTROL STRUCTURE - A zone temperature control structure which has two or more zone of which surface temperatures are controlled to different temperatures, respectively. The structure can maintain a temperature difference by suppressing heat conduction in a direction in which the zones are arrayed, and prevent formation of a hot spot by ensuring smooth heat conduction for heat input in a direction intersecting the direction in which the zones are arrayed. A heat-conducting anisotropic material layer is disposed between the two or more zones. The heat-conducting anisotropic material layer is configured such that heat conductivity is lower in the direction in which the two or more zones are arrayed than in the direction intersecting the direction in which the two or more zones are arrayed. | 09-29-2011 |
| 20110232677 | Method for cleaning low-k dielectrics - A method and system for treating a substrate and, in particular, a method and system for cleaning a low dielectric constant (low-k) dielectric film to remove, among other things, undesired residue is described. The method includes irradiating a region on a substrate containing one or more layers or structures with infrared (IR) radiation and optionally ultraviolet (UV) radiation to remove material or undesired residues from the one or more layers or structures. Furthermore, the method may optionally include exposing at least a portion of the region to a gas or vapor jet emanating from a gas nozzle along a jet axis in a direction towards the substrate. | 09-29-2011 |
| 20110232567 | METHOD OF CLEANING THE FILAMENT AND REACTOR'S INTERIOR IN FACVD - A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma. | 09-29-2011 |
| 20110229637 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A disclosed substrate processing method includes steps of: arranging a substrate in a chamber; introducing H | 09-22-2011 |
| 20110229120 | RINSING METHOD AND DEVELOPING METHOD - A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP | 09-22-2011 |
| 20110228439 | SUBSTRATE MOUNTING AND DEMOUNTING METHOD - A substrate mounting and demounting method that can prevent fine particles from getting stuck in a rear surface of a substrate. A substrate processing apparatus that implements the substrate mounting and demounting method has an electrostatic chuck that has therein an electrode plate to which a DC voltage is applied, and attracts and holds a substrate through an electrostatic force generated due to the applied DC voltage, and a heat-transmitting gas supply unit that supplies a heat-transmitting gas into a gap between the attracted and held substrate and the electrostatic chuck. When the DC voltage applied to the electrode plate is increased while being gradually changed, the pressure of the supplied heat-transmitting gas is increased in stages in response to the increase in the DC voltage. | 09-22-2011 |
| 20110226421 | PLASMA PROCESSING APPARATUS - An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber | 09-22-2011 |
| 20110226420 | ELECTRODE AND PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including a processing chamber | 09-22-2011 |
| 20110226181 | FILM FORMING APPARATUS - Disclosed is a film forming apparatus to form a thin film on a surface of an object to be processed by using a raw material gas including an organometallic compound includes; a processing container to carry out vacuum exhaustion; a placing table having a heater; and a gas introduction mechanism having a plurality of decomposition promoting gas introduction holes facing the placing table, and raw material gas introduction holes, wherein the decomposition promoting gas introduction holes being disposed while facing the object to be processed on the placing table in order to introduce a decomposition promoting gas to promote decomposition of the raw material gas, and the raw material gas introduction holes being disposed while surrounding a formation area of the plurality of decomposition promoting gas introduction holes in order to introduce the raw material gas. | 09-22-2011 |
| 20110226178 | FILM DEPOSITION SYSTEM - A film deposition system which a cycle of alternately supplying a first reactive gas and a second reactive gas and exhausting them is repeated twice or more in a vacuum vessel to cause reaction between the two gases, thereby depositing thin films on substrate surfaces, the film deposition system includes: a plurality of lower members having substrate-placing areas on which substrates will be placed; a plurality of upper members so placed that they face the lower members to form processing spaces together with the substrate-placing areas; a first reactive gas supply unit and a second reactive gas supply unit for supplying a first reactive gas and a second reactive gas, respectively, to the processing spaces; a purge gas supply unit for supplying a purge gas in the period between a first reactive gas supply period and a second reactive gas supply period; exhaust openings, situated along circumferences of the processing spaces, for communicating the inside of the processing spaces with the atmosphere in the vacuum vessel that is outside of the processing spaces; and an evacuating unit for evacuating the processing spaces via the atmosphere in the exhaust openings and the vacuum vessel. | 09-22-2011 |
| 20110224818 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MODIFYING SUBSTRATE PROCESSING CONDITIONS AND STORAGE MEDIUM - A substrate processing apparatus includes a setting unit for setting substrate processing conditions for a substrate in a substrate processing unit for performing a process on the substrate; a detection unit for detecting an abnormality of the substrate processing unit while the substrate processing unit performs the process on the substrate under the substrate processing conditions; a stopping unit for stopping the process on the substrate of the substrate processing unit if the abnormality is detected; and a modifying unit for modifying the substrate processing conditions for a substrate on which the process is stopped to be performed by the stopping unit. Further, a method for modifying substrate processing conditions includes the steps of setting processing conditions; detecting an abnormality of the substrate processing unit; stopping the process if the abnormality is detected; and modifying the processing conditions for a substrate on which the process is stopped. | 09-15-2011 |
| 20110223552 | VERTICAL HEAT TREATMENT APPARATUS AND METHOD FOR COOLING THE APPARATUS - A vertical heat treatment apparatus including a furnace body having a heating section in the inner circumferential surface; a treatment container for housing a plurality of objects W to be treated. An air supply line is connected to the furnace body, and an air exhaust line is connected to the furnace body. An air supply blower and an air supply line valve mechanism, and an air exhaust blower and an air exhaust line valve mechanism are provided in the air supply line and the air exhaust line, respectively. A pressure detection system is provided for detecting the pressure in the space. A control section controls, based on a detection signal from the pressure detection system the blowers, the air supply line valve mechanism and the air exhaust line valve mechanism to keep the space at a slightly negative pressure. | 09-15-2011 |
| 20110222581 | PROBE FOR TEMPERATURE MEASUREMENT, TEMPERATURE MEASURING SYSTEM AND TEMPERATURE MEASURING METHOD USING THE SAME - A probe for temperature measurement uses interference of a low-coherence light beam. The probe includes a temperature acquiring member configured to be brought into contact with a surface of a temperature measurement target and thermally assimilate with the temperature measurement target; a light irradiating/receiving unit configured to irradiate a measurement light beam as a low-coherence light beam to the temperature acquiring member and receive reflected light beams from a front surface and a rear surface of the temperature acquiring member; and a housing configured to define a distance between the temperature acquiring member and the light irradiating/receiving unit to a preset length and isolate optical paths of the measurement light beam and the two reflected light beams from an atmosphere in which the temperature measurement target is placed. | 09-15-2011 |
| 20110222038 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PLACING TABLE - A substrate processing apparatus, for performing a plasma process to a substrate (W) in a processing container held in a vacuum state, has a substrate placing table ( | 09-15-2011 |
| 20110220609 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support | 09-15-2011 |
| 20110220492 | SURFACE PLANARIZATION METHOD - Disclosed is a surface planarization method capable of planarizing the surface of a substrate while maintaining the film thickness of a polysilicon layer. A wafer formed with a polysilicon layer on the surface thereof is loaded on a susceptor of a chamber of a substrate processing apparatus, the pressure in the chamber is set to any one of 100 mTorr or more and 800 mTorr or less, and the flow ratio of argon gas in a mixed gas of oxygen gas and argon gas is set to any one of 50% or more and 95% or less, plasma is generated by exciting the mixed gas with a high-frequency power having a frequency set to any one of 13 MHz or more and 100 MHz or less, and the surface of the wafer is sputtered by positive ions of oxygen or argon in the generated plasma. | 09-15-2011 |
| 20110220288 | TEMPERATURE CONTROL SYSTEM, TEMPERATURE CONTROL METHOD, PLASMA PROCESSING APPARATUS AND COMPUTER STORAGE MEDIUM - There is provided a temperature control system configured to control a temperature of a temperature control target member of a processing chamber for performing a plasma process on a substrate therein. The temperature control system includes a heating unit configured to heat the temperature control target member; a cooling unit configured to cool the temperature control target member by circulating a liquid coolant; and a flow rate control unit configured to control a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber. | 09-15-2011 |
| 20110220216 | LIQUID TREATMENT APPARATUS, MOUNTING AND DISMOUNTING METHOD OF A CUP BODY, AND STORAGE MEDIUM - A liquid treatment apparatus treating a surface of a substrate held generally horizontally on a stage in a housing by supplying a treating liquid to said surface from a supply nozzle. The liquid treatment apparatus includes a cup body provided so as to surround the substrate held in the substrate holding part laterally, the cup body being mounted detachably to a base inside the housing from an upward direction thereof; a cup body holding part holding the cup body detachably; and an elevating mechanism moving the cup body holding part up and down between a first position at which the cup body is mounted upon the base body and a second position located above the first position. | 09-15-2011 |
| 20110220157 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING A COMPUTER PROGRAM FOR PERFORMING SUBSTRATE PROCESSING METHOD - A substrate processing apparatus according to the present invention comprises: a processing part configured to process a substrate; a chemical-liquid storing container configured to store a chemical liquid; a chemical-liquid supply driving part configured to supply the chemical liquid from the chemical-liquid storing container into the processing part; a circulation line configured to circulate the chemical liquid stored in the chemical-liquid storing container; and a mixture generating part provided on the circulation line. An inert-gas supply source is configured to supply an inert gas into the mixture generating part. The mixture generating part is configured to mix the chemical liquid supplied from the chemical-liquid storing container and the inert gas supplied from the inert-gas supply source with each other so as to generate a gas-liquid mixture. | 09-15-2011 |
| 20110220153 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - There is provided a substrate processing method including cleaning a substrate by immersing the substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied to a cleaning tank; transferring the substrate picked up from the cleaning tank to a drying chamber while holding the substrate in a longitudinal direction; and drying the substrate in the drying chamber communicating with an upper area of the cleaning tank by alternately supplying a first drying gas containing vapor of a solvent for removing a liquid and a second drying gas without containing the vapor of the solvent for removing the liquid to an area where the substrate is exposed between the upper area of the cleaning tank and the drying chamber after an upper end of the cleaned substrate is picked up from a liquid surface of the cleaning solution. | 09-15-2011 |
| 20110220148 | Method for performing preventative maintenance in a substrate processing system - A method for performing preventative maintenance in a substrate processing system is described. The method includes diagnosing a level of contamination in a substrate processing system, scheduling a wet clean process when necessary, and scheduling a dry clean process when necessary. The dry clean process may include an ozone cleaning process. | 09-15-2011 |
| 20110220089 | VERTICAL HEAT TREATMENT APPARATUS AND ASSEMBLY OF PRESSURE DETECTION SYSTEM AND TEMPERATURE SENSOR - A vertical heat treatment apparatus including a furnace body having heater elements, and a treatment container, disposed in the furnace body, for housing and heat treating objects W to be treated. An air supply line and an air exhaust line are connected to the furnace body. An air supply blower and an air supply line valve mechanism are disposed in the air supply line, and an air exhaust blower and an air exhaust line valve mechanism are disposed in the air exhaust line. A protective tube is provided which penetrates through the furnace body and in which a temperature sensor signal line is housed, and a pressure detection hole is formed in the protective tube. A pressure detection sensor is connected to the pressure detection hole. | 09-15-2011 |
