Tokyo Denpa Co., Ltd.
|Tokyo Denpa Co., Ltd. Patent applications|
|Patent application number||Title||Published|
|20110204355||ZINC OXIDE BASED SUBSTRATE AND METHOD FOR MANUFACTURING ZINC OXIDE BASED SUBSTRATE - A zinc oxide based substrate satisfies a condition that impurities Si, C, Ge, Sn, and Pb which are Group IV elements each have a concentration of 1×10||08-25-2011|
|20110117349||ZINC OXIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME - To produce a zinc oxide single crystal having a sufficiently low lithium concentration and a high crystallinity. A zinc oxide crystal is grown by hydrothermal synthesis method using a solution having a lithium concentration of 1 ppm or less (weight basis), while suppressing a fluctuation range of crystal growth temperature within 5° C. or at a temperature within the range of 300 to 370° C.||05-19-2011|
|20090104103||ARTIFICIAL QUARTZ MEMBER, PROCESS FOR PRODUCING THE SAME, AND OPTICAL ELEMENT COMPRISING THE SAME - An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.||04-23-2009|
Patent applications by Tokyo Denpa Co., Ltd.