Tohoku Techno Arch Co., Ltd.
|Tohoku Techno Arch Co., Ltd. Patent applications|
|Patent application number||Title||Published|
|20140326424||ARC MELTING FURNACE APPARATUS AND METHOD OF ARC MELTING MELT MATERIAL - The Present invention provides an arc melting furnace apparatus and a method of controlling arc discharge, in which a melt material having been melted can be stirred efficiently, avoiding labor intensive work. The furnace is provided with a mold||11-06-2014|
|20140202286||METAL POWDER PRODUCTION METHOD AND METAL POWDER PRODUCTION DEVICE - A metal powder production method and a metal powder production device capable of reducing the size of the device, reducing costs, and obtaining spherical metal powder are provided. Supply means supplies a downward flow of molten metal, and a plurality of jet burners emit flame jets to the downward flow of the molten metal supplied from the supply means. Each of the jet burners is provided to emit the flame jet from the same angle and from each of positions rotationally symmetrical with each other with respect to the downward flow of the molten metal.||07-24-2014|
|20140053288||EPO KNOCKOUT GFP ANEMIC MOUSE - The present invention relates to a model animal spontaneously developing anemia. More specifically, the invention relates to a transgenic non-human mammal spontaneously developing anemia associated with a postnatal decrease in production of erythropoietin (Epo), Epo-producing cells prepared from the transgenic non-human mammal, and a screening method using the Epo-producing cells.||02-20-2014|
|20130333812||COPPER ALLOY AND PROCESS FOR PRODUCING COPPER ALLOY - To provide a copper alloy of the FCC structure containing Ni: 3.0 to 29.5 mass %, Al: 0.5 to 7.0 mass %, and Si: 0.1 to 1.5 mass %, with the remainder consisting of Cu and incidental impurities, wherein the copper alloy is of the high strength, but is excellent in workability, and has high electrical conductivity, and can control property thereof, by precipitating a γ′ phase of the L1||12-19-2013|
|20130306874||GARNET-TYPE CRYSTAL FOR SCINTILLATOR AND RADIATION DETECTOR USING THE SAME - The garnet-type crystal for a scintillator of the present invention is represented by General Formula (1), (2), or (3),||11-21-2013|
|20130104948||THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION DEVICE||05-02-2013|
|20120310005||METHOD FOR PRODUCING 2-AZAADAMANTANE - To provide a method whereby a 2-azaadamantane can easily be obtained in good yield.||12-06-2012|
|20100311977||METHOD FOR PRODUCING 2-AZAADAMANTANE - To provide a method whereby a 2-azaadamantane can easily be obtained in good yield.||12-09-2010|
|20100076330||FETUS ELECTROCARDIOGRAM SIGNAL MEASURING METHOD AND ITS DEVICE - Disclosed are a fetus electrocardiogram signal measuring method and its device that are capable of measuring the electrocardiogram signals of a fetus even during fetus movements and even at a gestational age during which the measurement current is weak, without the need for reattaching the electrodes and providing any shield room, even if the mother is a hospitalized or ambulant pregnant woman. The fetus electrocardiogram signal measuring device includes (1) high input impedance electrodes, (2) region-variable ground electrodes, and (3) a differential amplifier circuit and an optimization computing section.||03-25-2010|
|20090057835||Group III nitride semiconductor and a manufacturing method thereof - A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor more than 10 μm on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer.||03-05-2009|
|20080261378||Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element - A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (||10-23-2008|
|20080213151||Pr-Containing Scintillator Single Crystal, Method of Manufacturing the Same, Radiation Detector, and Inspection Apparatus - The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.||09-04-2008|
Patent applications by Tohoku Techno Arch Co., Ltd.