| Tohoku Techno Arch Co., Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20100311977 | METHOD FOR PRODUCING 2-AZAADAMANTANE - To provide a method whereby a 2-azaadamantane can easily be obtained in good yield. | 12-09-2010 |
| 20100076330 | FETUS ELECTROCARDIOGRAM SIGNAL MEASURING METHOD AND ITS DEVICE - Disclosed are a fetus electrocardiogram signal measuring method and its device that are capable of measuring the electrocardiogram signals of a fetus even during fetus movements and even at a gestational age during which the measurement current is weak, without the need for reattaching the electrodes and providing any shield room, even if the mother is a hospitalized or ambulant pregnant woman. The fetus electrocardiogram signal measuring device includes (1) high input impedance electrodes, (2) region-variable ground electrodes, and (3) a differential amplifier circuit and an optimization computing section. | 03-25-2010 |
| 20090057835 | Group III nitride semiconductor and a manufacturing method thereof - A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor more than 10 μm on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer. | 03-05-2009 |
| 20080261378 | Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element - A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer ( | 10-23-2008 |
| 20080213151 | Pr-Containing Scintillator Single Crystal, Method of Manufacturing the Same, Radiation Detector, and Inspection Apparatus - The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr. | 09-04-2008 |
