| THE KANSAI ELECTRIC POWER CO., INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110318697 | GROUND FLARE - Provided is a ground flare in which a low-frequency vibration generated from a ground flare tower, such as a chimney, is properly adjusted to suppress it below a fixture-vibration generation limit, thereby preventing surrounding objects from resonating and vibrating. In a ground flare that burns a flammable exhaust gas with a burner at the lower end of a chimney, in which the lower end of the chimney and the periphery of the burner are surrounded by a windbreak, the low-frequency-noise sound pressure level of a ground flare tower composed of the chimney and the windbreak is reduced by selecting at least one of changing a natural frequency generated from the ground flare tower, using multiple ground flare towers, and installing a low-frequency-vibration absorber in the ground flare tower. | 12-29-2011 |
| 20110174009 | COMPRESSOR AND REFRIGERATING MACHINE - A compressor and a refrigerating machine which enable an easy disposal of a lubricant, are friendly to the natural environment, and have simple configurations, are provided. | 07-21-2011 |
| 20110158891 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. | 06-30-2011 |
| 20110135550 | CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD - [Object] To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas. | 06-09-2011 |
| 20110092355 | RECLAIMING APPARATUS AND RECLAIMING METHOD - A reclaiming apparatus | 04-21-2011 |
| 20110071318 | METHOD AND APPARATUS FOR PRODUCING MONO-LOWER-ALKYL MONOALKANOLAMINE - A reaction column ( | 03-24-2011 |
| 20110041685 | CO2 RECOVERY APPARATUS AND CO2 RECOVERY METHOD | 02-24-2011 |
| 20100326974 | METHOD FOR IMPROVING RESIDUAL STRESS IN TUBULAR BODY - An object is to provide a method and an apparatus for improving a residual stress in a tubular body, which are enabled to improve the residual stress reliably by clearly defining controlling rage for treatment conditions without depending on an installation state and configuration of the tubular body. When a cylindrical tubular body ( | 12-30-2010 |
| 20100322842 | CO2 RECOVERING APPARATUS AND METHOD | 12-23-2010 |
| 20100319532 | CO2 RECOVERY APPARATUS AND CO2 RECOVERY METHOD - Provided are a CO | 12-23-2010 |
| 20100319531 | CO2 RECOVERING APPARATUS AND METHOD | 12-23-2010 |
| 20100307344 | CO2 RECOVERING APPARATUS | 12-09-2010 |
| 20100304265 | SOLID OXIDE FUEL CELL - A solid oxide fuel cell of long lifetime in which good electric conductivity can be maintained between power generation cells even after long time use. A protective plate ( | 12-02-2010 |
| 20100261333 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
| 20100258817 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
| 20100258816 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
| 20100258005 | HEAT RECOVERY APPARATUS AND HEAT RECOVERY METHOD - A heat recovery apparatus, for an absorption apparatus for removing CO | 10-14-2010 |
| 20100180764 | ABSORBENT, CO2 OR H2S REDUCING APPARATUS, AND CO2 OR H2S REDUCING METHOD USING ABSORBENT - An absorbent according to the present invention absorbs CO | 07-22-2010 |
| 20100170396 | CO2 OR H2S REDUCING SYSTEM AND METHOD OF REDUCING CO2 OR H2S | 07-08-2010 |
| 20100032686 | Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage - Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named. | 02-11-2010 |
| 20100024556 | ULTRASONIC INSPECTION METHOD UTILIZING RESONANT PHENOMENA - A transmission probe and a reception probe for transmitting and receiving a wideband ultrasonic wave are provided. Each time when the locations of the probes and are moved, a received wave G | 02-04-2010 |
| 20100005722 | SYSTEM FOR COLLECTING CARBON DIOXIDE IN FLUE GAS - A system for collecting carbon dioxide in flue gas includes a stack that discharges flue gas discharged from an industrial facility to outside, a blower that is installed at the downstream side of the stack and draws the flue gas therein, a carbon-dioxide collecting device that collects carbon dioxide in the flue gas drawn in by the blower, and a gas flow sensor arranged near an exit side within the stack. A drawing amount of the flue gas by the blower to the carbon-dioxide collecting device is increased until an flow rate of the flue gas from the stack becomes zero in the gas flow sensor, and when the discharged amount of flue gas from the stack becomes zero, drawing in any more than that amount is stopped, and the carbon dioxide in the flue gas is collected while the flue gas is drawn in by a substantially constant amount. | 01-14-2010 |
| 20090317983 | Process for Producing Silicon Carbide Semiconductor Device - In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package. | 12-24-2009 |
| 20090304563 | Mercury removal system and method - The present invention provides a mercury removal system and method for effectively removing a mercury component, which is present in a gas stream in an extremely small amount in wet gas cleaning used for coal or heavy oil gasification, petroleum refining and the like. The mercury removal system in wet gas cleaning comprises a water washing tower for introducing therein a target gas containing a mercury component and transferring the mercury component into an absorbing solution, a flush drum ( | 12-10-2009 |
| 20090277330 | Absorbent Liquid, and Apparatus and Method for Removing CO2 or H2S from Gas with Use of Absorbent Liquid - An absorbent liquid according to the present invention is an absorbent liquid for absorbing CO | 11-12-2009 |
| 20090255670 | Method of Monitoring Underground Diffusion of Carbon Dioxide - An object is to provide a monitoring method for monitoring underground diffusion of carbon dioxide, which is used when injecting carbon dioxide into an underground coal seam to cause it to be adsorbed to the coal seam, and collecting hydrocarbon gases that have been displaced by the carbon dioxide and released from the coal seam, and with which the behavior of carbon dioxide injected into the ground can be continuously measured over a long period of time at a low cost, using a relatively simple device. | 10-15-2009 |
| 20090197151 | METHOD FOR OPERATING REDOX FLOW BATTERY AND REDOX FLOW BATTERY CELL STACK - The invention provides an operating method of a redox flow battery capable of grasping a charging state of the battery more reliably to stabilize an output capacity of the battery. The method is for operating the redox flow battery comprising a cell stack | 08-06-2009 |
| 20090195296 | Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices - In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C. | 08-06-2009 |
| 20090140195 | Gate valve - An object is to provide a gate valve capable of preventing operational deficiencies caused by particulate materials accumulating in a valve box, thus providing superior sealing properties and high durability, having a simple structure, and allowing inspection and maintenance to be performed easily. A gate valve installed in a transport line for transporting fluid containing particulate material at a coal gasification plant includes a valve box having an inlet portion and an outlet portion in which a channel constituting a part of the transport line is formed; a valve unit, provided between the inlet portion and the outlet portion, which extends in an opening-and-closing direction orthogonal to an axial direction of the channel, and which is movable in the opening-and-closing direction; a wedge plate provided between the valve unit and the inlet portion so as to extend in the opening-and-closing direction; and a guide plate provided between the valve unit and the outlet portion so as to extend in the opening-and-closing direction. Areas between the valve unit and the wedge plate and between and the valve unit and guide plate are sealed by means of surface contact. | 06-04-2009 |
| 20090072356 | High-Heat-Resistant Semiconductor Device - In a wide gap semiconductor device of SiC or the like used at a temperature of 150 degrees centigrade or higher, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high-molecular compound, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional steric structure which is formed by linking together organosilicon polymers C with covalent bonds resulting from addition reaction. The organosilicon polymers C have been formed by linking at least one organosilicon polymers A having a crosslinked structure using siloxane (Si—O—Si combination) with at least one organosilicon polymers B having a linear linked structure using siloxane through siloxane bonds. | 03-19-2009 |
| 20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
| 20080307704 | Coal gasification plant and method for operating the same - It is an object to solve a bypass line corrosion problem effectively, enable prompt supply of a fuel gas into a bypass line in the event of an emergency, and provide an inexpensive coal gasification plant. An integrated coal gasification combined cycle power generation plant includes a coal gasification furnace, a dust remover, a gas refiner, a gas turbine and the like, a main system line connecting therebetween, and a bypass line connecting between the outlet side of the coal gasification furnace in the main system line and a flare stack, wherein a dust remover bypass valve which is disposed in an upstream portion of the bypass line and which opens and closes the bypass line, a treatment gas control valve which is disposed in a downstream portion of the bypass line and which controls the flow rate, and a first inert gas input line which is disposed downstream from the dust remover bypass valve and which supplies the inert gas to the bypass line are provided. | 12-18-2008 |
| 20080223215 | CO2 RECOVERY SYSTEM AND WASTE-PRODUCT REMOVING METHOD | 09-18-2008 |
| 20080210948 | High-Heat-Resistive Semiconductor Device - The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may include, for example, a silicon-containing polymer which has one or more reactive groups (A′) selected from Si—R | 09-04-2008 |
| 20080204115 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME, AND POWER CONVERSION APPARATUS INCORPORATING THIS SEMICONDUCTOR DEVICE - The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising. | 08-28-2008 |
