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THE INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCE

THE INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCE Patent applications
Patent application numberTitlePublished
20090291523Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate - There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.11-26-2009