| 20110198680 | Non-Volatile Memory Device Including Quantum Dots Embeded in Oxide Thin Film, and Fabrication Method of the Same - A non-volatile memory device is provided in which quantum dots are embedded in an oxide thin film formed on a substrate. A conventional Si CMOS process can be used to manufacture the non-volatile memory device in a cost-effective way. Also, a photonic device and an electronic/photonic device, which can store a light signal or emit a stored signal as light, can be produced on a Si wafer in a cost-effective manner. | 08-18-2011 |
