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The Government of the United States of America, as represenied by the Secretary of the Navy
| The Government of the United States of America, as represenied by the Secretary of the Navy Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20090302352 | P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies - This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In | 12-10-2009 |