| TG SOLAR CORPORATION Patent applications |
| Patent application number | Title | Published |
| 20110139216 | SOLAR CELL AND METHOD FOR MANUFACTURING SAME - A solar cell and a manufacturing method thereof are disclosed. The solar cell in accordance with the present invention includes a substrate | 06-16-2011 |
| 20110039421 | HEAT TREATMENT METHOD - A heat treatment method which can prevent heat deformation of a substrate caused during a heat treatment process on the substrate with a thin film formed on its surface is provided. The heat treatment method in accordance with the present invention includes (a) stacking a second substrate | 02-17-2011 |
| 20100240165 | METHOD FOR MANUFACTURING SOLAR CELL - A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperature. The manufacturing method of a solar cell in accordance with the present invention includes the steps of (a) forming a first amorphous silicon layer on a substrate; (b) forming a second amorphous silicon layer on the first amorphous silicon layer; (c) forming a metal layer on the second amorphous silicon layer; (d) performing crystallization-annealing the second amorphous silicon layer; and (e) forming a third amorphous silicon layer on a resulting crystalline silicon layer of the step (d). | 09-23-2010 |
| 20100229934 | Solar cell and method for the same - A polycrystalline silicon solar cell and its manufacturing method are disclosed. The polycrystalline silicon solar cell in according with the present invention is formed by crystallizing amorphous silicon, in which a metal catalyst is used to lower crystallization temperature. The solar cell in according with the present invention is characterized by comprising a plurality of polycrystalline silicon layers, wherein at least one of the plurality of polycrystalline silicon layers contains a metal component. | 09-16-2010 |