| TES CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20130095665 | SYSTEMS AND METHODS FOR PROCESSING SUBSTRATES - A substrate processing system comprises a first processing module in which a process gas is supplied to a substrate to etch a silicon oxide layer formed on the substrate and a second processing module in which an activated oxygen gas is supplied to the substrate. With the system and a method using the same, the silicon oxide layer can be etched and a condensation layer and/or fumes and/or photoresist residues can be removed in a cost-effective way. | 04-18-2013 |
| 20110001430 | ELECTRODE DEVICE AND APPARATUS FOR GENERATING PLASMA - Provided are an electrode device and an apparatus for generating plasma. The electrode device for generating plasma includes: a planar member disposed to face a susceptor supporting a substrate and generating plasma between the substrate and the planar member; and a linear member providing a high frequency signal to the planar member via a plurality of feeding points that are electrically connected to the planar member and allowing admittance to be reduced as the linear member is closer to the feeding points on a path from supply points at which the high frequency signal is supplied to the linear member, to each of the feeding points, wherein the linear ember includes a connection unit, the connection unit including: a first member connecting two feeding points from among four feeding points disposed adjacent to one another in a straight line and is disposed to be separated from a plane that includes the straight line in which the feeding points are formed and forms a predetermined angle with the planar member; and a second member connecting two feeding points to which the first member is not connected, from among the four feeding points and is disposed symmetrical with the first member with respect to the plane that includes the straight line in which the feeding points are formed. | 01-06-2011 |
| 20090250443 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate. | 10-08-2009 |
| 20080293248 | METHOD OF FORMING AMORPHOUS CARBON FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - The present invention relates to a method of forming an amorphous carbon film and a method of manufacturing a semiconductor device using the method. An amorphous carbon film is formed on a substrate by vaporizing a liquid hydrocarbon compound, which has chain structure and one double bond, and supplying the compound to a chamber, and ionizing the compound. The amorphous carbon film is used as a hard mask film. | 11-27-2008 |
| 20080277064 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively. | 11-13-2008 |
| 20080202689 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a chamber; an insulating member disposed in an upper portion of the chamber; a ground electrode formed at a side wall of the chamber, a ground potential being applied to the ground electrode; and a lower electrode disposed in a lower portion of the chamber, a substrate being placed on the lower electrode, wherein the lower electrode is divided into a plurality of electrodes. | 08-28-2008 |
