TEL NEXX, Inc.
|TEL NEXX, Inc. Patent applications|
|Patent application number||Title||Published|
|20150047674||METHOD AND APPARATUS FOR REMOVAL OF PHOTORESIST USING IMPROVED CHEMISTRY - Techniques disclosed herein include a method and apparatus for stripping resist from a substrate without using high concentrations of toxic chemicals and without needing frequent bath replacement. Techniques include using a chemistry that lifts-off the resist, without substantially dissolving the resist, coupled with mechanically breaking removed resist into small particles using mechanical agitation and high fluid flow. Resist particles can then be removed from the vicinity of the wafer by a high-flow circulation out of a processing tank. Circulating flow can then be filtered to remove the resist particles from the circulating fluid and reintroduced into the processing tank. A filtering system can also remove particles from filters either during circulation or with circulation stopped.||02-19-2015|
|20130334036||APPARATUS FOR FLUID PROCESSING A WORKPIECE - A method of fluid processing a semiconductor workpiece, including disposing a workpiece holder with a housing capable of containing a fluid, the workpiece holder retaining the workpiece, providing an agitation system connected to the housing and comprising a member disposed within the housing adjacent the workpiece holder, and agitating the fluid by moving the member substantially parallel to a surface of the workpiece with a non-uniform oscillatory motion, the non-uniform oscillatory motion being a series of substantially continuous geometrically asymmetric oscillations wherein each consecutive oscillation of the series is geometrically asymmetric having at least two substantially continuous opposing strokes wherein reversal positions of each substantially continuous stroke of the substantially continuous asymmetric oscillation are disposed asymmetrically with respect to a center point of each immediately preceding substantially continuous stroke of the oscillation.||12-19-2013|
|20130213816||Incorporating High-Purity Copper Deposit As Smoothing Step After Direct On-Barrier Plating To Improve Quality Of Deposited Nucleation Metal In Microscale Features - Techniques disclosed herein a method and system for coating the interior surfaces of microscale hole features fabricated into the substantially planar surface of a substrate. Techniques include creating a separation or smoothing layer between a nucleation layer process and a metallization or gapfill process. The addition of such a separation layer avoids dissolving a seed layer and gapfill complications from remnant organic material. Techniques include adding a conformal copper smoothing layer step after applying a direct on-barrier nucleation layer. The smoothing layer adds a sufficient thickness so that the gapfill chemistry does not erode the nucleation layer. The smoothing layer can also provide a high-purity copper film that will not detrimentally interact with the TSV gapfill chemistry. This smoothing layer can also provide a surface with consistent roughness to allow uniform adhesion of the organic additives in the TSV gapfill chemistry to create a filling profile that is void-free.||08-22-2013|
|20130048610||EDGE BEVEL REMOVAL APPARATUS AND METHOD - A substrate edge bevel etch module for etching a material from a peripheral edge of a substrate with an etchant is described. The substrate edge bevel etch module includes a rotatable substrate holder having a support for a substrate, and a surface tension etch applicator comprising a wetted etching surface opposing a substrate surface proximate an edge of the substrate when the surface tension etch applicator is located proximate to the edge of the substrate. The surface tension etch applicator further includes an etchant dispensing portion, proximate the wetted etching surface, which dispenses an etchant in a region between the wetted etching surface and the substrate surface and wet at least a portion of the wetted etching surface and the substrate surface. A spacing between the wetted etching surface and the substrate surface is selected to retain the etchant using surface tension forces and form a meniscus there between.||02-28-2013|
|20120325671||ELECTROPLATED LEAD-FREE BUMP DEPOSITION - A method of forming a metal feature on a workpiece with deposition is provided. The method includes providing an under bump metal layer for solder of an electronic device on the workpiece, depositing a substantially pure tin layer directly to the under bump metal layer, and depositing a tin silver alloy layer onto the substantially pure tin layer.||12-27-2012|
Patent applications by TEL NEXX, Inc.