Tekcore Co., Ltd.
|Tekcore Co., Ltd. Patent applications|
|Patent application number||Title||Published|
|20150123160||FLIP CHIP LIGHT-EMITTING DIODE PACKAGE STRUCTURE - A flip chip light-emitting diode (LED) package structure includes a circuit board, an electrical conducting layer and a plurality of flip chip light-emitting elements. The circuit board includes a bearing surface. The electrical conducting layer is formed on the bearing surface, and includes a plurality of electrical connection regions independent of each other. Each flip chip light-emitting element includes a p-type electrode and an n-type electrode. The p-type electrodes and the n-type electrodes of the flip chip light-emitting elements are electrically connected to the electrical connection regions, so that the flip chip light-emitting elements are electrically connected in series to form a package structure. During packaging of the flip chip light-emitting elements, the structure formed by the serial connection forms a circuit that can withstand a high voltage, and further reduce the current.||05-07-2015|
|20120088318||Method for Fabricating a Vertical Light-Emitting Diode with High Brightness - A method for fabricating a vertical light-emitting diode comprises forming a stack including a plurality of epitaxial layers on a patterned first substrate, placing a second substrate on the stack, removing the first substrate to expose the first surface, planarizing a first surface of the stack that was in contact with the patterned first substrate and has a pattern corresponding to a pattern provided on the first substrate to form a planarized second surface, and forming a first electrode in contact with a side of the second substrate that is opposite to the stack, and a second electrode in contact with the second surface of the stack. A roughening step can be performed to form uneven surface portions on a region of the second surface for improving light emission through the second surface of the stack.||04-12-2012|
|20110163293||Vertical Light-Emitting Diode and Manufacture Method Thereof - The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction.||07-07-2011|
|20110097831||Method of Manufacturing a Vertical Type Light-Emitting Diode - In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.||04-28-2011|
|20110006307||Group III-Nitride Semiconductor Schottky Diode and Its Fabrication Method - A group III-nitride semiconductor Schottky diode comprises a conducting substrate having a first surface, a stack of multiple layers including a buffer layer and a semiconductor layer sequentially formed on the first surface, wherein the semiconductor layer comprises a group III nitride compound, a first electrode on the semiconductor layer, and a second electrode formed in contact with the first surface at a position adjacent to the stack of multiple layers. In other embodiments, the application also describes a method of fabricating the group III-nitride semiconductor Schottky diode.||01-13-2011|
Patent applications by Tekcore Co., Ltd.