| TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENSE OF JAPAN Patent applications |
| Patent application number | Title | Published |
|---|
| 20100032652 | INFRARED PHOTODETECTOR - An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer. | 02-11-2010 |
| 20100032651 | QUANTUM DOT INFRARED PHOTODETECTOR - A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots. | 02-11-2010 |
| 20100032552 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer | 02-11-2010 |
