TAIWAN SIMICONDUCTOR MANUFACTURING COMPANY, LTD. Patent applications |
Patent application number | Title | Published |
20140272680 | Method For Mask Fabrication And Repair - A method for repairing a phase-defect region in a patterned mask for extreme ultraviolet lithography (EUVL) is disclosed. A patterned mask for EUVL is received. The patterned mask includes an absorptive region having an absorption layer over a defect-repairing-enhancement (DRE) layer, a reflective region having the DRE layer without the absorption layer on top of it, a defect and a phase-defect region resulting from the defect and intruding the reflective region. A location and a shape of the phase-defect region is determined. A portion or portions of the DRE layer in the reflective region is removed according to the location and the shape of the phase-defect region to compensate the effect of the phase-defect region. | 09-18-2014 |
20140092675 | TWO-PORT SRAM WRITE TRACKING SCHEME - A write tracking control circuit includes an input node, and a first transistor configured to pre-charge a word bit line connected to at least two memory cells. The write tracking control circuit further includes a second transistor configured to pre-charge a read bit line connected to the at least two memory cells. The write tracking control circuit further includes a first delay circuit between the input node and the first transistor, the first delay circuit configured to introduce a first delay time, wherein a gate of the first transistor is connected to the first delay circuit. The write tracking control circuit further includes a second delay circuit between the input node and the second transistor, the second delay circuit configured to introduce a second delay time different from the first delay time, wherein a gate of the second transistor is connected to the second delay circuit. | 04-03-2014 |