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TAIWAN SEMICONDUTOR MANUFACTURING CO., LTD.
| TAIWAN SEMICONDUTOR MANUFACTURING CO., LTD. Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20100155849 | TRANSISTORS WITH METAL GATE AND METHODS FOR FORMING THE SAME - A semiconductor device includes at least one first gate dielectric layer over a substrate. A first transition-metal oxycarbide (MC | 06-24-2010 |