TAIWAN SEMICONDUCTOR MAUFACTURING COMPANY, LTD.
|TAIWAN SEMICONDUCTOR MAUFACTURING COMPANY, LTD. Patent applications|
|Patent application number||Title||Published|
|20140264478||INTERFACE FOR METAL GATE INTEGRATION - A metal oxide semiconductor field effect transistor (MOSFET) includes a semiconductor substrate and a interlayer dielectric (ILD) over the semiconductor substrate. A gate structure is formed within the ILD and disposed on the semiconductor substrate, wherein the gate structure includes a high-k dielectric material layer and a metal gate stack. One or more portions of a protection layer are formed over the gate stack, and a contact etch stop layer is formed over the ILD and over the one or more portions of the protection layer. The metal gate stack includes aluminum and the protection layer includes aluminum oxide.||09-18-2014|
|20120169409||CHARGE PUMP CIRCUITS, SYSTEMS, AND OPERATIONAL METHODS THEREOF - A charge pump circuit includes at least one stage between an input end and an output end. The at least one stage includes a first CMOS transistor coupled with a first capacitor and a second CMOS transistor coupled with a second capacitor. The at least one stage is capable of receiving a first timing signal and a second timing signal for pumping an input voltage at the input end to an output voltage at the output end. During a transitional period of the first timing signal and the second timing signal, the at least one stage is capable of substantially turning off at least one of the first CMOS transistor and the second CMOS transistor for substantially reducing leakage currents flowing through at least one of the first CMOS transistor and the second CMOS transistor.||07-05-2012|
|20110027944||METHOD OF FORMING ELECTRICAL CONNECTIONS - A method of forming electrical connections to a semiconductor wafer. A semiconductor wafer comprising an insulation layer is provided. The insulation layer has a surface. A patterned mask layer is formed over the surface of the insulation layer. The patterned mask layer exposes portions of the surface of the insulation layer through a plurality of holes. The portions of the plurality of holes are filled with a metal material comprising copper to form elongated columns of the metal material. The elongated columns of the metal material have a sidewall surface. The patterned mask layer is removed to expose the sidewall surface of the elongated columns of the metal material. A protection layer is formed on the exposed sidewall surface of the elongated columns of the metal material.||02-03-2011|
|20100102411||PHOTODETECTOR FOR BACKSIDE-ILLUMINATED SENSOR - A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.||04-29-2010|
Patent applications by TAIWAN SEMICONDUCTOR MAUFACTURING COMPANY, LTD.