| Taiwan Semiconductor Manufacturing Company Patent applications |
| Patent application number | Title | Published |
|---|
| 20100175479 | Method to produce 3-D optical gyroscope my MEMS technology - A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam adjacent to a first edge of the gyro disk. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. | 07-15-2010 |
| 20100171203 | Robust TSV structure - A die includes a seal-ring structure below a substrate. The seal-ring structure is disposed around at least one substrate region. At least one means for substantially preventing ion diffusion into the substrate region. The at least one means is coupled with the seal-ring structure. | 07-08-2010 |
| 20100126531 | METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT USING SUPERCRITICAL FLUIDS - A process of cleaning a semiconductor device fabrication equipment is provided. In one embodiment, the semiconductor device fabrication equipment is placed in a chamber; a fluid is introduced into the chamber; a pressure and temperature of the fluid is controlled to bring the fluid to a supercritical state; the semiconductor device fabrication equipment is cleaned by having the supercritical fluid contact the semiconductor device fabrication equipment; the supercritical fluid is removed from the chamber; and the semiconductor device fabrication equipment is removed from the chamber. | 05-27-2010 |
| 20090299669 | Method of yield management for semiconductor manufacture and apparatus thereof - A method of yield management for semiconductor manufacture and an apparatus thereof are provided. The method includes the following steps. Defect data of a layer of a semiconductor wafer is obtained, wherein the defect data includes sizes and locations of defects with respect to the layer. A layout with respect to the layer is obtained. And a critical area analysis is performed in parallel for the layer by a plurality of processing devices according to the defect data and the layout to determine locations of defects falling into a critical area of the layer among the locations of the defects. | 12-03-2009 |
