Tadahiro Ohmi Patent applications |
Patent application number | Title | Published |
20100072519 | P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT - In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe. | 03-25-2010 |
20080241587 | Film-Forming Apparatus And Film-Forming Method - For increasing the film-forming rate and enabling uniform film formation and waste elimination of raw material, a film-forming method and a film-forming apparatus can reach an evaporated film-forming material to a surface of a substrate by the flow of a transport gas so as to control the film-forming conditions by the flow of the gas. Thereby a uniform thin film can be deposited on the large-area substrate. That is, by directing the evaporated raw material toward the substrate, it is possible to increase the film-forming rate and achieve uniform film formation. | 10-02-2008 |
20080220592 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PLANARIZATION METHOD - A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach. | 09-11-2008 |