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SUSS MICROTEC INC

SUSS MICROTEC INC Patent applications
Patent application numberTitlePublished
20120037307AUTOMATED THERMAL SLIDE DEBONDER - An improved apparatus for debonding temporary bonded wafers includes a debonder, a cleaning module and a taping module. A vacuum chuck is used in the debonder for holding the debonded thinned wafer and remains with the thinned debonded wafer during the follow up processes steps of cleaning and mounting onto a dicing tape. In one embodiment the debonded thinned wafer remains onto the vacuum chuck and is moved with the vacuum chuck into the cleaning module and then the taping module. In another embodiment the debonded thinned wafer remains onto the vacuum chuck and first the cleaning module moves over the thinned wafer to clean the wafer and then the taping module moves over the thinned wafer to mount a dicing tape onto the wafer.02-16-2012
20110198817THIN WAFER CARRIER - An improved wafer carrier device for carrying and holding semiconductor wafers that have a thickness of below 100 micrometers includes a transportable wafer chuck having an enclosed vacuum reservoir and a top surface configured to support a wafer. The top surface has one or more through-openings extending from the top surface to the vacuum reservoir and the wafer is held onto the top surface via vacuum from the vacuum reservoir drawn through the through-openings.08-18-2011
20110146901AUTOMATED THERMAL SLIDE DEBONDER - An improved apparatus for debonding temporary bonded wafers includes a debonder, a cleaning module and a taping module. A vacuum chuck is used in the debonder for holding the debonded thinned wafer and remains with the thinned debonded wafer during the follow up processes steps of cleaning and mounting onto a dicing tape. In one embodiment the debonded thinned wafer remains onto the vacuum chuck and is moved with the vacuum chuck into the cleaning module and then the taping module. In another embodiment the debonded thinned wafer remains onto the vacuum chuck and first the cleaning module moves over the thinned wafer to clean the wafer and then the taping module moves over the thinned wafer to mount a dicing tape onto the wafer.06-23-2011
20110014774APPARATUS FOR TEMPORARY WAFER BONDING AND DEBONDING - An improved apparatus for temporary wafer bonding includes a temporary bonder cluster and a debonder cluster. The temporary bonder cluster includes temporary bonder modules that perform electronic wafer bonding processes including adhesive layer bonding, combination of an adhesive layer with a release layer bonding and a combination of a UV-light curable adhesive layer with a laser absorbing release layer bonding. The debonder cluster includes a thermal slide debonder, a mechanical debonder and a radiation debonder.01-20-2011
20110010908APPARATUS FOR THERMAL-SLIDE DEBONDING OF TEMPORARY BONDED SEMICONDUCTOR WAFERS - A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.01-20-2011
20100266373DEVICE FOR CENTERING WAFERS - A device for centering circular wafers includes a support chuck for supporting a circular wafer to be centered upon its top surface, left, right and middle centering linkage rods and a cam plate synchronizing the rectilinear motion of the left, right and middle centering linkage rods. The left centering linkage rod includes a first rotating arm at a first end and rectilinear motion of the left centering linkage rod translates into rotational motion of the first rotating arm. The right centering linkage rod comprises a second rotating arm at a first end, and rectilinear motion of the right centering linkage rod translates into rotational motion of the second rotating arm. The first and second rotating arms are rotatable around an axis perpendicular to the top surface of the support chuck and comprise a curved edge surface configured to roll against the curved edge of the circular wafer. The middle centering linkage rod includes a third alignment arm at a first end. The third alignment arm is placed in contact with the curved edge of the circular wafer and linear motion of the middle centering linkage rod in the Y-direction pushes the third alignment arm and the circular wafer toward or away from the center of the support chuck. The cam plate includes first and second linear cam profiles. The first cam profile provides rectilinear motion for the middle centering linkage rod and the second linear cam profile provides rectilinear motion for the left and right centering linkage rods.10-21-2010
20100264566RAPID FABRICATION OF A MICROELECTRONIC TEMPORARY SUPPORT FOR INORGANIC SUBSTRATES - A method for fabricating a rigid temporary support used for supporting inorganic substrates during processing includes providing an inorganic substrate comprising a first surface to be processed and a second surface opposite to the first surface. Next, applying a liquid layer to the second surface of the inorganic substrate and then curing the applied liquid layer and thereby forming a rigid temporary support attached to the second surface of the inorganic substrate. Next, processing the first surface of the inorganic substrate while supporting the inorganic substrate upon the rigid temporary support. The curing includes first exposing the applied liquid layer to ultraviolet (UV) radiation and then performing a post exposure bake (PEB) at a temperature sufficient to complete the curing of the applied liquid layer and to promote outgassing of substances.10-21-2010
20100263794APPARATUS FOR MECHANICALLY DEBONDING TEMPORARY BONDED SEMICONDUCTOR WAFERS - A debonder apparatus for debonding two via an adhesive layer combined with a release layer temporary bonded wafers includes a chuck assembly, a flex plate assembly and a contact roller. The chuck assembly includes a chuck and a first wafer holder configured to hold wafers in contact with the top surface of the chuck. The flex plate assembly includes a flex plate and a second wafer holder configured to hold wafers in contact with a first surface of the flex plate. The flex plate comprises a first edge connected to a hinge and a second edge diametrically opposite to the first edge, and the flex plate's first edge is arranged adjacent to a first edge of the chuck and the flex plate is configured to swing around the hinge and to be placed above the top surface of the chuck. The contact roller is arranged adjacent to a second edge of the chuck, which is diametrically opposite to its first edge. A debond drive motor is configured to move the contact roller vertical to the plane of the chuck top surface. In operation, a wafer pair, comprising a carrier wafer stacked upon and being bonded to a device wafer via an adhesive layer and a release layer, is placed upon the chuck so that the ubonded surface of the device wafer is in contact with the chuck top surface. Next, the flex plate swings around the hinge and is placed above the bottom chuck so that its first surface is in contact with the unbonded surface of the carrier wafer. Next, the contact roller is driven upward until it contacts and pushes the second edge of the flex plate up while the carrier wafer is held by the flex plate and the device wafer is held by the chuck via the second and first wafer holders, respectively. The contact roller push flexes the second edge of the flex plate and causes delamination of the wafer pair along the release layer.10-21-2010
20100122762METHOD AND APPARATUS FOR WAFER BONDING WITH ENHANCED WAFER MATING - An improved wafer-to-wafer bonding method includes aligning an upper and a lower wafer and initiating a bond at a single point by applying pressure to a single point of the upper wafer via the flow of pressurized gas through a port terminating at the single point. The bond-front propagates radially across the aligned oppositely oriented wafer surfaces at a set radial velocity rate bringing the two wafer surfaces into full atomic contact by controlling the gas pressure and/or controlling the velocity of the motion of the lower wafer up toward the upper wafer.05-20-2010
20100089978METHOD AND APPARATUS FOR WAFER BONDING - An improved apparatus for bonding semiconductor structures includes equipment for treating a first surface of a first semiconductor structure and a first surface of a second semiconductor structure with formic acid, equipment for positioning the first surface of the first semiconductor structure directly opposite and in contact with the first surface of the second semiconductor structure and equipment for forming a bond interface between the treated first surfaces of the first and second semiconductor structures by pressing the first and second semiconductor structures together. The equipment for treating the surfaces of the first and second semiconductor structures with formic acid includes a sealed tank filled partially with liquid formic acid and partially with formic acid vapor. Opening an inlet valve connects the tank to a nitrogen gas source and allows nitrogen gas to flow through the tank. Opening an outlet valve allows a mixture of formic acid vapor with nitrogen gas to flow out of the tank. The mixture is used for treating the surfaces of the first and second semiconductor structures.04-15-2010
20090251699APPARATUS AND METHOD FOR SEMICONDUCTOR WAFER ALIGNMENT - An apparatus for aligning semiconductor wafers includes equipment for positioning a first surface of a first semiconductor wafer directly opposite to a first surface of a second semiconductor wafer and equipment for aligning a first structure on the first semiconductor wafer with a second structure on the first surface of the second semiconductor wafer. The aligning equipment comprises at least one movable alignment device configured to be moved during alignment and to be inserted between the first surface of the first semiconductor wafer and the first surface of the second semiconductor wafer. The positioning equipment are vibrationally and mechanically isolated from the alignment device motion.10-08-2009

Patent applications by SUSS MICROTEC INC