20150115507 | METHOD OF MAKING HIGH PURITY POLYCRYSTALLINE ALUMINUM OXYNITRIDE BODIES USEFUL IN SEMICONDUCTOR PROCESS CHAMBERS - A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AION powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components. | 04-30-2015 |