SUNEDISON, INC. Patent applications |
Patent application number | Title | Published |
20160068399 | METHODS FOR SEPARATING HALOSILANES - Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed. | 03-10-2016 |
20150151977 | SYSTEMS FOR PRODUCING SILANE - Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen. | 06-04-2015 |
20150123248 | SILICON WAFERS WITH SUPPRESSED MINORITY CARRIER LIFETIME DEGRADATION - Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates. | 05-07-2015 |
20150110702 | PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERTIONS - Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon. | 04-23-2015 |
20150075969 | PROCESSES AND SYSTEMS FOR PURIFYING SILANE - Processes and systems for purifying silane-containing streams and, in particular, for purifying silane-containing streams that also contain ethylene are disclosed. The processes and systems may be arranged such that one or more ethylene reactors are downstream of light-end distillation operations. | 03-19-2015 |
20140327112 | METHOD TO DELINEATE CRYSTAL RELATED DEFECTS - Process for detecting grown-in-defects in a semiconductor silicon substrate. The process includes contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration sufficient to grow grown-in -defects disposed in the semiconductor silicon substrate to a size capable of being detected by an optical detection device. | 11-06-2014 |
20140187023 | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Compression - Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. | 07-03-2014 |
20140187022 | Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension - Apparatus and processes for preparing heterostructures with reduced strain are disclosed. The heterostructures may include a semiconductor structure that conforms to a surface layer having a different crystal lattice constant than the structure to form a relatively low-defect heterostructure. | 07-03-2014 |
20140182788 | Apparatus for Stressing Semiconductor Substrates - Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant. | 07-03-2014 |
20140141537 | PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INACTIVE OXYGEN PRECIPITATE NUCLEI - Processes for the treatment of silicon wafers to form a high density non-uniform distribution of oxygen precipitate nuclei therein such that, upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, the wafers form oxygen precipitates in the bulk and a precipitate-free zone near the surface are disclosed. The processes involve activation of inactive oxygen precipitate nuclei by performing heat treatments between about 400° C. and about 600° C. for at least about 1 hour. | 05-22-2014 |