| Sundew Technologies LLC Patent applications |
| Patent application number | Title | Published |
|---|
| 20110311725 | APPARATUS AND METHODS FOR SAFELY PROVIDING HAZARDOUS REACTANTS - An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point. | 12-22-2011 |
| 20110310526 | CAPACITORS WITH HIGH ENERGY STORAGE DENSITY AND LOW ESR - Electrostatic capacitors with high capacitance density and high-energy storage are implemented over conventional electrolytic capacitor anode substrates using highly conformal contact layers deposited by atomic layer deposition. Capacitor films that are suitable for energy storage, electrical and electronics circuits, and for integration onto PC boards endure long lifetime and high-temperature operation range. | 12-22-2011 |
| 20110206909 | COATINGS FOR SUPPRESSING METALLIC WHISKERS - A coating is formed by depositing the coating on a metallic feature at a deposition temperature. Subsequently, the deposited coating and the metallic feature are cooled below the deposition temperature. The coating is chosen such that this cooling step causes the coating to induce a tensile stress in the metallic feature sufficient to substantially suppress the growth of metallic whiskers on that metallic feature. The coating thereby acts to suppress the growth of metallic whiskers. | 08-25-2011 |
| 20110070141 | DEPOSITION METHOD AND APPARATUS - A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate. | 03-24-2011 |
| 20100301011 | APPARATUS AND METHOD FOR DOWNSTREAM PRESSURE CONTROL AND SUB-ATMOSPHERIC REACTIVE GAS ABATEMENT - A sub-atmospheric downstream pressure control apparatus includes a first flow restricting element (FRE); a pressure control chamber (PCC) located in serial fluidic communication downstream from the first FRE; a second FRE located in serial fluidic communication downstream from the PCC; a gas source; and a flow controlling device in serial fluidic communication downstream from the gas source and upstream from the PCC. | 12-02-2010 |
| 20100224804 | FAIL SAFE PNEUMATICALLY ACTUATED VALVE WITH FAST TIME RESPONSE AND ADJUSTABLE CONDUCTANCE - Apparatus and method for fail-safe high-speed-pneumatic valve is disclosed. Fail-safe dependability is provided by a spring-loaded normally-closed pneumatic actuator. When the spring-loaded actuator is pressurized, the normally closed mechanism is actuated to the valve active position. Concurrently, the pressure is directly applied to deflect a diaphragm or a bellow-assembly back to sealing position. Ultra high purity embodiments with standard dome shaped diaphragms are disclosed. Additional high conductance diaphragms and bellows embodiments are employed for higher conductance valves. Novel flow path layouts are disclosed. The valves are applicable for fast gas and fluid switching and are particularly suitable for high productivity Atomic Layer Deposition (ALD) applications. Additional embodiments cover improved diaphragm and seal reliability, externally adjustable valve conductance, improved valve safety and high temperature valve seals. | 09-09-2010 |
| 20100166957 | PERIMETER PARTITION-VALVE WITH PROTECTED SEALS AND ASSOCIATED SMALL SIZE PROCESS CHAMBERS AND MULTIPLE CHAMBER SYSTEMS - A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint. | 07-01-2010 |
| 20100129548 | ALD APPARATUS AND METHOD - Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation. | 05-27-2010 |
| 20100043888 | ALD APPARATUS AND METHOD - An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance. | 02-25-2010 |
| 20100003404 | ALD METHOD AND APPARATUS - A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed. | 01-07-2010 |
