| Sumitomo Electric Industries, Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120129343 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device that can be in contact with both of an n-type SiC region and a p-type SiC region and can suppress increase in contact resistance due to oxidation, a method of manufacturing a semiconductor device includes the steps of preparing a SiC layer, and forming an ohmic electrode on a main surface of the SiC layer. The step of forming the ohmic electrode includes the steps of forming a conductor layer which will become the ohmic electrode on the main surface of the SiC layer, and performing heat treatment such that the conductor layer becomes the ohmic electrode. After the step of performing the heat treatment, a temperature of the ohmic electrode when a surface of the ohmic electrode is exposed to an atmosphere containing oxygen is set to 100° C. or lower. | 05-24-2012 |
| 20120129326 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, on one main surface of the substrate, a detection film having a light transmittance different from that of silicon carbide; confirming presence of the substrate by applying light to the detection film; and forming an active region in the substrate whose presence has been confirmed. | 05-24-2012 |
| 20120129056 | NEGATIVE ELECTRODE MATERIAL FOR BATTERY, NEGATIVE ELECTRODE PRECURSOR MATERIAL FOR BATTERY, AND BATTERY - In a molten salt battery | 05-24-2012 |
| 20120128312 | OPTICAL CABLE GRIPPING MEMBER - An optical cable gripping member which prevents the kinds of splicing devices from being diversified, thereby enabling reduction of the labor of component management and lowering of the production cost to be realized is obtained. | 05-24-2012 |
| 20120128016 | III-NITRIDE SEMICONDUCTOR LASER DIODE - Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current. | 05-24-2012 |
| 20120126928 | REACTOR AND REACTOR-USE COMPONENT - Provided is a reactor and a reactor component that can prevent cracking of a resin portion that is interposed between a coil and an internal core portion. The reactor includes a coil | 05-24-2012 |
| 20120126251 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate. | 05-24-2012 |
| 20120126250 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention provides a silicon carbide semiconductor device having an ohmic electrode improved in adhesion of a wire thereto by preventing deposition of carbon so as not to form a Schottky contact, as well as a method for manufacturing such a silicon carbide semiconductor device. In the SiC semiconductor device, upon forming the ohmic electrode, a first metal layer made of one first metallic element is formed on one main surface of a SiC layer. Further, a Si layer made of Si is formed on an opposite surface of the first metal layer to its surface facing the SiC layer. The stacked structure thus formed is subjected to thermal treatment. In this way, there can be obtained a silicon carbide semiconductor device having an ohmic electrode adhered well to a wire by preventing deposition of carbon atoms on the surface layer of the electrode and formation of a Schottky contact resulting from Si and SiC. | 05-24-2012 |
| 20120122301 | METHOD OF MANUFACTURING GaN-BASED FILM - A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided. | 05-17-2012 |
| 20120121273 | COMMON BASE CIRCUIT WITH OUTPUT COMPENSATION, CURRENT-TO-VOLTAGE CIRCUIT CONFIGURED WITH COMMON BASE AMPLIFIER, AND OPTICAL RECEIVER IMPLEMENTED WITH THE SAME - An amplifier implementing with a common base circuit is disclosed. The amplifier includes the common base circuit, a current shunt, and a current supplement. The common base circuit receives an input current. The current shunt shunts the input current based on the average of the output of the pre-amplifier. The current supplement supplements a current shunted by the current shunt. | 05-17-2012 |
| 20120121263 | PON SYSTEM AND TERMINAL OPERATION REGISTERING METHOD - In a PON system in which communication is performed at a plurality of types of transmission rate (L, M, and H) in an upstream direction from a plurality of terminals connected to a station apparatus through optical fibers, within a discovery period for allowing an unregistered terminal to be recognized by station apparatus, the terminal makes a discovery response at one type of transmission rate (L). With this configuration, station apparatus can wait for a discovery response with a receive function being allowed to support transmission rate (L). | 05-17-2012 |
| 20120119869 | REACTOR - Provided is a reactor having a small size. A reactor | 05-17-2012 |
| 20120119240 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer. | 05-17-2012 |
| 20120119225 | SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate. | 05-17-2012 |
| 20120118824 | WATER TREATMENT APPARATUS AND WATER TREATMENT METHOD - There is provided a water treatment apparatus, including: first membrane filtration means in which a filtration membrane having an average pore diameter of 1 μm or more is used; second membrane filtration means for treating water filtered by the first membrane filtration means, by using a microfiltration membrane or ultrafiltration membrane; and reverse osmosis membrane filtration means for treating water filtered by the second membrane filtration means. In particular, there is provided a water treatment apparatus, wherein a hydrophobic polymer membrane that is not subjected to hydrophilicizing processing is used as the filtration membrane having an average pore diameter of 1 μm or more. There is also provided a water treatment method that can be implemented by these water treatment apparatuses. | 05-17-2012 |
| 20120118234 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT - Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness. | 05-17-2012 |
| 20120118226 | Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate - Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula Al | 05-17-2012 |
| 20120118222 | METHOD OF MANUFACTURING GaN-BASED FILM - A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. | 05-17-2012 |
| 20120115035 | THREE-DIMENSIONAL NET-LIKE ALUMINUM POROUS BODY, ELECTRODE USING THE ALUMINUM POROUS BODY, NONAQUEOUS ELECTROLYTE BATTERY USING THE ELECTRODE, AND NONAQUEOUS ELECTROLYTE CAPACITOR USING THE ELECTRODE - Provided are a three-dimensional net-like aluminum porous body in which the diameter of cells in the porous body is uneven in the thickness direction of the porous body; a current collector and an electrode each using the aluminum porous body; and methods for producing these members. The porous body is a three-dimensional net-like aluminum porous body in a sheet form, for a current collector, in which the diameter of cells in the porous body is uneven in the thickness direction of the porous body. When a cross section in the thickness direction of the three-dimensional net-like aluminum porous body is divided into three regions of a region 1, a region 2 and a region 3 in this order, the average cell diameter of the regions 1 and 3 is preferably different from the cell diameter of the region 2. | 05-10-2012 |
| 20120115002 | MOLTEN SALT BATTERY - To provide a molten salt battery which is highly safe and has long charge/discharge cycle life. The molten salt battery of the present invention includes a negative electrode | 05-10-2012 |
| 20120114002 | GROUP III NITRIDE SEMICONDUCTOR LASER DIODE, AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER DIODE - Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al | 05-10-2012 |
| 20120113999 | DRIVER FOR LASER DIODE IMPLEMENTED WITH OFFSET CONTROL - A driver circuit for an LD is disclosed. The circuit includes a decision unit, an offset adjustor, and an amplifier each having the differential configuration in an embodiment. The decision unit decides and generates a signal LOS that distinguishes the existence/absence of the input signal. The offset adjustor, depending on the signal from the decision unit, adds/compensate the offset thereof. The amplifier, whose output are pulled up to the power supply Vcc through an inductor. Because the output of the offset adjustor compensates the offset thereof during the absence of the input signal, the output of the amplifier does not cause overshoot or undershoot. | 05-10-2012 |
| 20120112928 | TRAFFIC SIGNAL CONTROL SYSTEM, TRAFFIC SIGNAL CONTROL APPARATUS, AND TRAFFIC SIGNAL CONTROL METHOD (AS AMENDED) - Provided is a traffic signal control system that can operate in a flexible and sophisticated manner by, after selecting a pattern of a traffic signal control parameter corresponding to the current time using a first pattern switching table that is used in a time-controlled pattern selection scheme, selecting again a pattern using an additional second pattern switching table, where a call condition for selecting a set pattern is set in the second pattern switching table, and by selecting the pattern set in the second pattern switching table in place of the pattern selected in the first pattern switching table if a calculated travel time matches the call condition. | 05-10-2012 |
| 20120112209 | SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate. | 05-10-2012 |
| 20120112204 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND EPITAXIAL SUBSTRATE - For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization. | 05-10-2012 |
| 20120112203 | GROUP-III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE, AND EPITAXIAL SUBSTRATE - Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×10 | 05-10-2012 |
| 20120112135 | METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMICONDUCTOR CRYSTAL - A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal ( | 05-10-2012 |
| 20120111484 | MAGNESIUM ALLOY JOINED PART AND PRODUCTION METHOD THEREOF - The method of producing a magnesium alloy joined part has the following steps: a joining step of joining a reinforcing material made of metal to a plate material made of magnesium alloy without allowing an organic material to remain at the joined portion and a plastic-working step of performing plastic working on the plate material to which the reinforcing material is joined. A desirable means of joining the reinforcing material to the plate material can be to use an inorganic adhesive. Because the magnesium alloy joined part is formed by a structure in which the reinforcing material is joined to the plate material, in comparison with the case where the reinforcing material is formed by machining or the like, the magnesium alloy structural member can be obtained with high production efficiency. | 05-10-2012 |
| 20120108439 | METHOD OF PRODUCING SUBSTRATE AND SUPERCONDUCTING WIRE - The present invention relates to a method of producing a substrate, including the steps of preparing a substrate having a nickel layer formed on a copper layer through plating, subjecting the nickel layer to thermal treatment at 800-1000° C., and epitaxial-growing an intermediate layer on the nickel layer, after the step of subjecting the nickel layer to thermal treatment. According to the present invention, there can be provided a substrate that allows the orientation and flatness at the surface of a nickel layer to be improved, and a method of producing the substrate. | 05-03-2012 |
| 20120108436 | SUBSTRATE, METHOD OF PRODUCING SUBSTRATE, SUPERCONDUCTING WIRE, AND METHOD OF PRODUCING SUPERCONDUCTING WIRE - A substrate of the present invention includes a copper layer, an alloy layer containing copper and nickel, formed on the copper layer, a nickel layer formed on the alloy layer, and an intermediate layer formed on the nickel layer. The concentration of nickel in the alloy layer at the interface between the alloy layer and the nickel layer is greater than the concentration of nickel in the alloy layer at the interface between the alloy layer and the copper layer. According to the present invention, there can be provided a substrate that allows the AC loss of a superconducting wire to be reduced, a method of producing a substrate, a superconducting wire, and a method of producing a superconducting wire. | 05-03-2012 |
| 20120107968 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF ESTIMATING DAMAGE FROM FORMATION OF SCRIBE GROOVE - A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 05-03-2012 |
| 20120107218 | PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND PRODUCTION DEVICE OF SILICON CARBIDE CRYSTAL - A production method of a SiC crystal includes the following steps. That is, there is prepared a production device including a crucible and a heat insulator covering an outer circumference of the crucible. A source material is placed in the crucible. A seed crystal is placed opposite to the source material in the crucible. The silicon carbide crystal is grown by heating the source material in the crucible for sublimation thereof and depositing resultant source material gas on the seed crystal. The step of preparing the production device includes the step of providing a heat dissipation portion, which is constituted by a space, between the heat insulator and an outer surface of the crucible at a side of the seed crystal. | 05-03-2012 |
| 20120107171 | MAGNESIUM ALLOY SHEET - A magnesium alloy sheet having good press formability, a magnesium alloy structural member produced by pressing the sheet, and a method for producing a magnesium alloy sheet are provided. The magnesium alloy sheet is composed of a magnesium alloy containing Al and Mn. When a region from a surface of the alloy sheet to 30% of the thickness of the alloy sheet in a thickness direction of the magnesium alloy sheet is defined as a surface region and when a 200 μm | 05-03-2012 |
| 20120106981 | LASER DRIVER AND OPTICAL TRANSMITTER IMPLEMENTING THE SAME - An LD-Driver with the push-pull arrangement is disclosed. The driver includes the high side driver driven by the positive phase signal and the low side driver driven by the negative phase signal. When the positive phase signal is in HIGH, the high side driver becomes ON and the LD driver provides additional current to the bias current for the LD; while, when the negative phase signal is in HIGH, the low side driver becomes ON and the LD driver extracts a portion of the bias current for the LD. | 05-03-2012 |
| 20120106906 | STRANDED OPTICAL CABLE WITH CONNECTORS - The stranded optical cable | 05-03-2012 |
| 20120106581 | LASER PROCESSING METHOD - The present invention relates to a method of processing a metal thin film formed on a transparent substrate by radiating pulsed light onto the metal thin film, and having the steps of repeatedly outputting the pulsed light by directly modulating a semiconductor laser of the seed light source in accordance with electric signals, amplifying the pulsed light using an optical amplifier including an optical amplification medium, controlling the full width at half maximum of the pulsed light that is amplified and outputted by the optical amplifier to be 0.5 ns or less, and removing the metal thin film by radiating the pulsed light thus having the controlled full width at half maximum onto the metal thin film through the transparent substrate. | 05-03-2012 |
| 20120105169 | ELECTRONIC CIRCUIT - An electronic circuit includes a first transmission line connected to a DC power source, a second transmission line having one end connected to the first transmission line at a connecting node, a narrow portion formed in the second transmission line and provided at a position that is away from a specific position by equal to or greater than ⅛ wavelength of a signal, the specific position being away from the connecting node at a distance equal to ¼ wavelength, and a capacitor having one end connected to the other end of the second transmission line and the other end connected to a reference potential. | 05-03-2012 |
| 20120104859 | POWER CONVERSION DEVICE - There is provided a power conversion device having no limitation on a voltage on each of an input side and an output side, being compact, and involving a low loss. | 05-03-2012 |
| 20120104558 | III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - In a semiconductor device | 05-03-2012 |
| 20120104556 | POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present power device includes a metal-made support substrate, and a group III nitride conductive layer, a group III nitride active layer and an electrode successively formed on one main surface side of the metal-made support substrate. In addition, the present method for manufacturing a power device includes the steps of preparing a conductive-layer-joined metal-made support substrate in which a group III nitride conductive layer is joined to a metal-made support substrate, forming a group III nitride active layer on the group III nitride conductive layer, and forming an electrode on the group III nitride active layer. Thus, an inexpensive power device low in on-resistance and a method for manufacturing the same can be provided. | 05-03-2012 |
| 20120104433 | GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND EPITAXIAL WAFER - A primary surface | 05-03-2012 |
| 20120103023 | METHOD OF MANUFACTURING GLASS PREFORM - According to one embodiment, there is provided a method of manufacturing a glass preform, including: obtaining a glass-fine-particle deposit by a VAD process; and heating the obtained glass-fine-particle deposit at a high temperature, thereby manufacturing a transparent glass preform, wherein, while depositing glass fine particles, in addition to monitoring a deposition shape of the glass-fine-particle deposit and controlling a pull-up rate of the glass-fine-particle deposit, there is controlled at least any of: flow rates of glass starting gases to be charged into glass-fine-particle producing burners; flow rates of flame forming gases to be charged into the glass-fine-particle producing burners; and positions of the glass-fine-particle producing burners relative to the glass-fine-particle deposit, so that the deposition shape may become a target shape, and wherein the deposition of the glass fine particles is stopped in a case where the deposition shape deviates from the target shape. | 05-03-2012 |
| 20120101391 | BLOOD VESSEL WALL ANALYZING DEVICE AND BLOOD VESSEL WALL ANALYZING METHOD - The present invention relates to a blood vessel wall analyzing apparatus provided with a structure enabling accurate measurement of plaque components in a blood vessel wall in a state that reduces the burden on a patient. In the blood vessel wall analyzing apparatus ( | 04-26-2012 |
| 20120100654 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 04-26-2012 |
| 20120100643 | DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE - A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement. | 04-26-2012 |
| 20120100416 | MOLTEN SALT BATTERY CASE, AND MOLTEN SALT BATTERY - The case for a molten salt battery is used for a molten salt battery containing as an electrolyte a molten salt containing sodium ions. The case is formed of aluminum or an aluminum alloy containing 90% by mass or more of aluminum. | 04-26-2012 |
| 20120100392 | METAL LAMINATED STRUCTURE AND METHOD FOR PRODUCING THE METAL LAMINATED STRUCTURE - There is provided a metal laminated structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being disposed on one surface of the second metal layer, the third metal layer being disposed on the other surface of the second metal layer, the first metal layer including at least one of tungsten and molybdenum, the second metal layer including copper, the third metal layer including at least one of tungsten and molybdenum, and a method for producing the metal laminated structure. | 04-26-2012 |
| 20120100035 | MAGNESIUM ALLOY SHEET - A magnesium alloy sheet having high impact resistance at low temperature, a magnesium alloy structural member using this sheet, and a method for producing a magnesium alloy sheet are provided. The magnesium alloy sheet is composed of a magnesium alloy containing Al and Mn. When a region from a surface of the alloy sheet to 30% of the thickness of the alloy sheet in a thickness direction of the magnesium alloy sheet is defined as a surface region and when a 50 μm | 04-26-2012 |
| 20120099872 | OPTICAL COMMUNICATION MODULE - Plural conductive plates extend from a transparent containing unit containing the photoelectric conversion device, plural electrical circuit components are connected to the conductive plate, and the conductive plate extending from the transparent containing unit is accommodated in a housing while the conductive plate is bent. At that time, the conductive plate extending from the transparent containing unit is coupled at two portions in an extending direction by coupled-fixing members made of non-conductive synthetic resin, the electrical circuit components are mounted between the coupled-fixing members and the conductive plate is bent at portions outside these two coupled-fixing members. In the case that the conductive plate must be cut to generate a floating point portion, a floating-point fixing member is provided for coupling and fixing the floating point portion to an adjacent conductive plate. | 04-26-2012 |
| 20120097980 | SILICON CARBIDE INSULATING GATE TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A termination configuration of a silicon carbide insulating gate type semiconductor device includes a semiconductor layer of a first conductivity type having a first main face, a gate electrode, and a source interconnection, as well as a circumferential resurf region. The semiconductor layer includes a body region of a second conductivity type, a source region of the first conductivity type, a contact region of the second conductivity type, and a circumferential resurf region of the second conductivity type. A width of a portion of the circumferential resurf region excluding the body region is greater than or equal to ½ the thickness of at least the semiconductor layer. A silicon carbide insulating gate type semiconductor device of high breakdown voltage and high performance can be provided. | 04-26-2012 |
| 20120094415 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar. | 04-19-2012 |
| 20120094408 | METHOD FOR PRODUCING SURFACE EMITTING SEMICONDUCTOR DEVICE - A method for producing a surface emitting semiconductor device includes a step of forming a semiconductor stacked structure including an active layer, a first semiconductor layer containing aluminum on the active layer, and a DBR portion, on the first semiconductor layer, to include alternating stacked second semiconductor layers and third semiconductor layers having different aluminum contents; a step of forming a mesa portion by etching the DBR portion and the first semiconductor layer; an oxidation step of oxidizing the first semiconductor layer from a side face of the mesa portion toward the inside of the mesa portion to form an annular oxidized region inside the first semiconductor layer; a first etching step of selectively etching an oxidized region formed in the DBR portion; and a second etching step of removing a peripheral portion of the DBR portion. | 04-19-2012 |
| 20120094402 | METHOD TO MANUFACTURE SEMICONDUCTOR DEVICE WITH OPTICAL GRATING - A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating. | 04-19-2012 |
| 20120093713 | SPINEL LIGHT-TRANSMITTING WINDOW MATERIAL AND METHOD FOR PRODUCING THE SAME - To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 μm, and the number of pores having a largest diameter of not less than 10 μm is not more than 2.0 per 1 cm | 04-19-2012 |
| 20120093190 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor laser device includes a first semiconductor stack portion that includes a grating layer and an active layer provided on the grating layer. The grating layer has a first region and second region; a diffraction grating provided in the first region; a semiconductor ridge structure portion provided on the first semiconductor stack portion and extending in a first direction; and a pair of first trenches provided along both side faces of the semiconductor ridge structure portion with the first region of the grating layer being located between the trenches. The first trenches penetrate through the grating layer. The first region of the grating layer has an end extending in a second direction intersecting with the first direction. The end of the first region of the grating layer reaches a trench. | 04-19-2012 |
| 20120092073 | TRANS-IMPEDANCE AMPLIFIER FOR OPTICAL RECEIVER - A trans-impedance amplifier (TIA) for an optical receiver is disclosed, where the TIA stabilizes the cross point in the output thereof independent of the variation of the power supply. The TIA of the invention includes an amplifier section, a source follower, and a bias generator. A transistor in the source follower to define the current flowing in the source follower and another transistor in the bias generator constitute a current-mirror circuit. The operating point of the other transistor in the bias generator depends on the variation of the power supply. The output level of the amplifier section follows the variation of the power supply. | 04-19-2012 |
| 20120091856 | SUBSTRATE, MANUFACTURING METHOD OF SUBSTRATE AND SAW DEVICE - A substrate having appropriate strength and allowing firm bonding to a piezoelectric substrate and the like can be obtained at a lower cost. The substrate for an SAW device is formed of spinel, and PV value representing difference in level of one main surface of the substrate is at least 2 nm and at most 8 nm. Preferably, average roughness Ra of one main surface of the substrate is at least 0.01 nm and at most 0.5 nm. With such characteristics, the main surface of the substrate to be bonded to a piezoelectric substrate of the SAW device can be bonded satisfactorily to the piezoelectric material forming the piezoelectric substrate utilizing van der Waals interaction. | 04-19-2012 |
| 20120091472 | SILICON CARBIDE SUBSTRATE - A first circular surface is provided with a first notch portion having a first shape. A second circular surface is opposite to the first circular surface and is provided with a second notch portion having a second shape. A side surface connects the first circular surface and the second circular surface to each other. The first notch portion and the second notch portion are opposite to each other. The side surface has a first depression connecting the first notch portion and the second notch portion to each other. | 04-19-2012 |
| 20120088326 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 04-12-2012 |
| 20120088139 | ELECTRODE FOR MOLTEN SALT BATTERY, MOLTEN SALT BATTERY, AND METHOD FOR PRODUCING ELECTRODE - An electrode for a molten salt battery includes a current collector connectable to an electrode terminal of the molten salt battery and an active material. The current collector has an internal space in which small spaces are mutually coupled. The internal space of the current collector is filled with the active material. | 04-12-2012 |
| 20120087626 | MULTI-CORE OPTICAL FIBRE - A multi-core optical fibre | 04-12-2012 |
| 20120086015 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×10 | 04-12-2012 |
| 20120080729 | FIELD EFFECT TRANSISTOR - A lateral field-effect transistor capable of improving switching speed and reducing operationally defective products is provided. A gate wiring has a base, a plurality of fingers protruding from the base, and a connection connecting tips of adjacent fingers. The finger of the gate wiring is arranged between the finger of a source wiring and the finger of a drain wiring. The base of the gate wiring is arranged between the base of the source wiring and the fingers of the drain wiring and intersects with the fingers of the source wiring, with an insulating film interposed between the base of the gate wiring and the fingers. | 04-05-2012 |
| 20120080659 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer. | 04-05-2012 |
| 20120078117 | BLOOD VESSEL INNER WALL ANALYZING DEVICE AND BLOOD VESSEL INNER WALL ANALYZING METHOD - The present invention relates to a blood vessel inner wall analyzing apparatus provided with a structure for more accurately analyzing components of substances adhered to the inner walls of blood vessels. A blood vessel inner wall analyzing apparatus ( | 03-29-2012 |
| 20120075003 | ELECTRONIC CIRCUIT - An electronic circuit includes: first through third transistors having a control terminal, first and second terminals; a first direct current path supplying a direct current having passed through between the first terminal and the second terminal of at least one of the second transistor and the third transistor to the second terminal of the transistor at former position compared to the transistor through which the direct current passed; a second direct current path that is different from the first direct current path and supplies a direct current having passed through between the first terminal and the second terminal of at least one of the second transistor and the third transistor to the second terminal of the transistor at former position compared to the transistor through which the direct current passed; and a common coupling point coupling the first direct current path and the second direct current path in common. | 03-29-2012 |
| 20120074403 | METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE - The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with few stacking faults. A method for growing a GaN crystal includes the steps of preparing a GaN seed crystal substrate | 03-29-2012 |
| 20120074312 | METHOD FOR QUANTIFYING RED PHOSPHOROUS IN RESIN - The invention offers a method of quantitatively analyzing red phosphorus in a resin by the pyrolysis GCMS, the method having a further improved quantification accuracy. The method has the following steps: determining the retention time A of red phosphorus by performing pyrolysis GCMS measurement under a predetermined separating condition; determining the peak strength ratio B of the specimen to be measured by performing pyrolysis GCMS measurement to confirm that a peak of a mass spectrum is detected at the same retention time as the retention time A and by dividing the measured value of the peak area by the quantity of the specimen; confirming that when the height of the peak at an m/z of 124 in the mass spectrum is taken as 10, the height of the peak at an m/z of 62 lies in the 1.82-2.06 range and the height of the peak at an m/z of 93 lies in the 1.03-1.15 range; determining the relationship between the peak strength ratio C and the red-phosphorus content using multiple reference specimens under the same separating condition; and determining the quantity of the red phosphorus in the specimen to be measured by comparing the peak strength ratio B with the foregoing relationship. | 03-29-2012 |
| 20120074059 | CLEANING METHOD FOR FILTRATION MEMBRANE AND MEMBRANE FILTRATION APPARATUS - There is provided a cleaning method for a hydrophobic filtration membrane used for membrane filtration of water to be treated such as seawater, discharged water and ballast water including a jelly-like suspended substance and clogged with the suspended substance in the water to be treated, the filtration membrane being brought into contact with limonene-containing water, or backwashing of the filtration membrane with a cleaning liquid being done, and then, a flow having air taken therein being applied onto a surface of the filtration membrane or a water stream from an eductor nozzle being sprayed onto the filtration membrane. There is also provided a membrane filtration apparatus capable of efficiently performing the above-mentioned cleaning method. | 03-29-2012 |
| 20120070929 | METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE - Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S | 03-22-2012 |
| 20120070735 | METHOD FOR PRODUCING POROUS METAL BODY, POROUS ALUMINUM BODY, BATTERY ELECTRODE MATERIAL INCLUDING POROUS METAL BODY OR POROUS ALUMINUM BODY, AND ELECTRODE MATERIAL FOR ELECTRICAL DOUBLE LAYER CAPACITOR - A porous metal body containing continuous pores and having a low oxygen content is provided by decomposing a porous resin body that contains continuous pores and has a layer of a metal thereon by heating the porous resin body at a temperature equal to or less than the melting point of the metal while the porous resin body is immersed in a first molten salt and a negative potential is applied to the metal layer; and a method for producing the porous metal body is provided. | 03-22-2012 |
| 20120070683 | MANUFACTURING METHOD OF ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - There is provided a manufacturing method of an aluminum structure, including a conductive treatment process of forming an electrically conductive layer on a surface of a resin molded body, the electrically conductive layer being made of one or more metals selected from the group consisting of gold, silver, platinum, rhodium, ruthenium, palladium, nickel, copper, cobalt, iron, and aluminum, and a plating process of plating the resin molded body subjected to the conductive treatment process with aluminum in a molten salt bath. The manufacturing method of an aluminum structure allows aluminum plating on the surface of even a porous resin molded body having a three-dimensional network structure. In particular, there is also provided a manufacturing method of an aluminum structure that can form porous aluminum having a large area. | 03-22-2012 |
| 20120070605 | SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE - An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes. | 03-22-2012 |
| 20120070248 | LINEAR OBJECT, BOLT, NUT AND WASHER EACH COMPRISING MAGNESIUM ALLOY - There is provided a linear object comprising magnesium-alloy having not only excellent heat resistance but also excellent plastic formability. The linear object comprising magnesium-alloy contains, on a mass percent basis, 0.1% to 6% Y, one or more elements selected from the group consisting of 0.1% to 6% Al, 0.01% to 2% Zn, 0.01% to 2% Mn, 0.1% to 6% Sn, 0.01% to 2% Ca, 0.01% to 2% Si, 0.01% to 2% Zr, and 0.01% to 2% Nd, and the balance being Mg and incidental impurities, in which the linear object comprising magnesium-alloy has a creep strain of 1.0% or less, the creep strain being determined by a creep test at a temperature of 150° C. and a stress of 75 MPa for 100 hours. | 03-22-2012 |
| 20120070121 | FRONT END MODULE FOR OPTICAL RECEIVER - A front end module for an optical receiver is disclosed. The module includes a PD, a trans-impedance amplifier (TIA), an insulating carrier for mounting the PD, and a conductive base for mounting the carrier. The carrier provides first and second metal films thereon. The first metal film carries a photocurrent from the PD to the TIA, while, the second metal film carries the bias supply to the PD. The PD is mounted on the first and second metal films by the flip-chip arrangement. The second metal film surrounds the first metal film to suppress resonances appeared in the trans-impedance spectrum of the front end module. | 03-22-2012 |
| 20120070112 | OPTICAL FIBER SHEET AND BODY MOTION SENSOR - A body motion sensor, such as an SAS diagnostic device, with which a subject can be examined in a state close to that in an ordinary living environment and it is possible to clearly discriminate between an apnea state and a hypopnea state by means of a relatively simple analytical method; and an optical fiber sheet suitable for use in the sensor. The body motion sensor, such as an SAS diagnostic device, comprises a light source such as an LED, an optical fiber sheet, and an analysis unit that determines fluctuations in the quantity of light outputted from the optical fiber sheet and detects motions of the body. As the optical fiber sheet, use is made of an optical fiber sheet comprising a planar object, such as a fabric, paper, or plastic sheet, and graded-index optical quartz fibers directly or indirectly disposed thereon or affixed thereto When the sheet is produced, it is preferred to use a pressure-sensitive adhesive sheet comprising a sheet support, such as paper or fabric, and a pressure-sensitive adhesive layer formed thereon. | 03-22-2012 |
| 20120068195 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates. | 03-22-2012 |
| 20120068155 | III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - In a semiconductor device | 03-22-2012 |
| 20120067731 | MANUFACTURING METHOD OF ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - There is provided a manufacturing method of an aluminum structure, including a conductive treatment process of forming an electrically conductive layer made of aluminum on a surface of a resin molded body and a plating process of plating the resin molded body subjected to the conductive treatment process with aluminum in a molten salt bath. Even with a porous resin molded body having a three-dimensional network structure, the method allows the surface of the porous resin molded body to be plated with aluminum, thus forming a high-purity aluminum structure having a uniform thick film. Porous aluminum having a large area is also provided. | 03-22-2012 |
| 20120067730 | MANUFACTURING METHOD OF ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - A porous resin article having a three-dimensional network structure is used. A resin molded body at least the surface of which has been subjected to conductive treatment is plated with aluminum in a molten salt bath to form an aluminum structure, thus forming a porous aluminum that includes an aluminum layer having a thickness in the range of 1 to 100 μm, has an aluminum purity of 98.0% or more and a carbon content of 1.0% or more and 2% or less, and contains inevitable impurities as the balance. Even with a porous resin molded body having a three-dimensional network structure, this allows the surface of the porous resin molded body to be plated with aluminum, thus forming a high-purity aluminum structure having a uniform thick film. | 03-22-2012 |
| 20120063188 | INVERTER DEVICE RELAY-CONNECTING MEMBER - A relay-connecting member ( | 03-15-2012 |
| 20120063161 | LIGHT SOURCE DEVICE AND DISPLAY APPARATUS - A light source device includes a single optical waveguide, a plurality of optical sub-assemblies, and an assembly holder. The optical waveguide includes a core area extending along a predetermined axis, a cladding area covering a periphery of the core area, and a first end face extending along a plane intersecting the predetermined axis. The assembly holder has an inner surface supporting the optical sub-assemblies so that the optical sub-assemblies are respectively arranged on a plurality of reference lines and optically coupled to the first end face of the optical waveguide. Each optical sub-assembly includes a semiconductor light-emitting element having a light-emitting surface optically coupled to the first end face of the optical waveguide, and a support member on which the semiconductor light-emitting element is mounted. The reference lines extend in different directions from one point on a predetermined axis of the core area to the cladding area. | 03-15-2012 |
| 20120062985 | OPTICAL FIBER AMPLIFYING MODULE - The present invention relates to an optical fiber amplifying module equipped with a structure for stably attaining a high gain even when amplifying light having a low duty cycle. The optical fiber amplifying module comprises at least three amplification optical fibers successively arranged from an input connector to an output collimator. A bandpass filter is arranged between the first- and second-stage amplification optical fibers. Control means having a structure constituted by optically passive components alone or a feedback structure functions so as to render an upper limit to a gain for input light in the first-stage amplification optical fiber, thereby preventing the deterioration in performances such as destruction of the bandpass filter from occurring in optical components positioned on the upstream side of the final-stage amplification optical fiber. | 03-15-2012 |
| 20120061687 | SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - A silicon carbide substrate, which allows for reduced resistivity in the thickness direction thereof while restraining stacking faults from being produced due to heat treatment, includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on one main surface of the base layer. The base layer has an impurity concentration greater than 2×10 | 03-15-2012 |
| 20120061686 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith. Thus, the silicon carbide substrate | 03-15-2012 |
| 20120061643 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE METHOD FOR MAKING THE SAME - A GaN-based semiconductor light emitting device | 03-15-2012 |
| 20120061122 | CONDUCTOR FOR ELECTRIC WIRE, AND ELECTRIC WIRE FOR AUTOMOBILE - A conductor for electric wire that has excellent strength and excellent weldability, and an electric wire for automobile including the conductor. The conductor for electric wire contains a copper alloy having an oxygen content of 50 mass parts per million or less, the copper alloy containing 0.1 to 0.6 mass % Mg, and a balance of copper and an unavoidable impurity. It is preferable that the copper alloy further contains one or a plurality of material elements selected from the group consisting of Ag, In, Sr and Ca, the selected one or plurality of material elements being 0.0005 to 0.3 mass % in total. It is preferable that the copper alloy further contains 0.2 to 0.75 mass % Sn. | 03-15-2012 |
| 20120058635 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing includes the steps of forming a BCB resin region on a semiconductor optical device; processing a surface of the BCB resin region with inductively coupled plasma produced with a high-frequency power supply for supplying ICP power and a high-frequency power supply for supplying bias power, thus forming a silicon oxide film on the surface of the BCB resin region and roughening the surface of the BCB resin region with projections and recesses; and forming an electrode pad on the surface of the BCB resin region in direct contact with the silicon oxide film. The surface roughness of the BCB resin region and the thickness of the silicon oxide film on the surface of the BCB resin region are controlled by adjusting the bias power and the ICP power. | 03-08-2012 |
| 20120058583 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 03-08-2012 |
| 20120058582 | METHOD FOR ETCHING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF | 03-08-2012 |
| 20120058581 | METHOD OF MANUFACTURING LASER DIODE - Manufacturing a laser diode includes growing an active layer, a first InP layer, and a diffraction grating layer; forming an alignment mark having a recess by etching the diffraction grating layer and the first InP layer; forming a first etching mask; forming a diffraction grating in the diffraction grating layer using the first etching mask; forming a modified layer containing InAsP on a surface of the alignment mark recess by supplying a first source gas containing As and a second source gas containing P; growing a second InP layer on the diffraction grating layer and on the alignment mark; forming a second etching mask on the second InP layer; selectively etching the second InP layer embedded in the recess of the alignment mark through the second etching mask by using the modified layer serving as an etching stopper; and forming a waveguide structure using the alignment mark. | 03-08-2012 |
| 20120058393 | BATTERY AND ENERGY SYSTEM - A battery including a positive electrode, a negative electrode mainly composed of sodium, and an electrolyte provided between the positive electrode and the negative electrode, the electrolyte being molten salt containing anions expressed with chemical formula (I) below and cations of metal, | 03-08-2012 |
| 20120056203 | SEMICONDUCTOR DEVICE - A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on the active layer and separated from the source electrode. The silicon carbide substrate includes: a base layer made of single-crystal silicon carbide, and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The SiC layer has a defect density smaller than that of the base layer. | 03-08-2012 |
| 20120056202 | SEMICONDUCTOR DEVICE - A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10 | 03-08-2012 |
| 20120056201 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n | 03-08-2012 |
| 20120055605 | METHOD OF MANUFACTURING WIRE HARNESS - A method of manufacturing a wire harness is provided. A portion of a wire is mounted on a first holder such that the portion of the wire is disposed between a thermoplastic material and another thermoplastic material, the thermoplastic material and the other thermoplastic material, that are mounted on the first holder, are pressed by heater-equipped the lower mold and the upper mold, thereby press-forming and heating the thermoplastic material and the other thermoplastic material, so that the portion of the wire is covered around with the thermoplastic material and the other thermoplastic material and that mutually contacting surfaces of the thermoplastic material and the other thermoplastic material are welded, and thereafter, the portion of the wire that is covered the thermoplastic material and the other thermoplastic material is removed from the lower mold and the upper mold while being mounted on an upper side of the first holder. | 03-08-2012 |
| 20120045183 | OPTICAL MODULE WITH CERAMIC PACKAGE - An optical module with an arrangement is disclosed in which the module has the LD, the TEC, and the lens with the lens carrier also mounted on the TEC. The signal light from the LD is concentrated by the lens and reflected by the mirror each assembled with the lens carrier mounted on the TEC. The TEC is mounted on the bottom metal that covers the bottom of the ceramic package, the first layer of which is widely cut to set the TEC therein. The FPC is coupled in at least two edges of the first ceramic layer left from the cut. | 02-23-2012 |
| 20120045182 | OPTICAL TRANSCEIVER HAVING EFFECTIVE HEAT CONDUCTING PATH FROM TOSA TO METAL HOUSING - An optical transceiver having a effective heat conducting path from the TOSA to the metal housing is disclosed. The TOSA has a bottom member, on which a heat generating device such as TEC is mounted, extending to a direction perpendicular to the longitudinal axis of the metal housing. The optical transceiver further includes a block movably in contact with the bottom member of the TOSA and the inner surface of the metal housing to establish the effective heat conducting path from the TOSA to the metal housing. | 02-23-2012 |
| 20120045181 | OPTICAL TRANSCEIVER HAVING EFFECTIVE HEAT DISSIPATING PATH FROM OSA TO COVER - A heat transferring mechanism of an optical transceiver is disclosed. The optical transceiver includes a metal cover, a OSA that generate heat, and a heat conductor. The OSA has the heat transferring surface extending to a direction intersecting, or substantially in perpendicular, to the longitudinal direction of the optical transceiver. The heat conductor, which is formed only by cutting and bending of metal plate, includes a contact plate and the transfer plate in thermally contact to a heat transferring surface of the OSA and an inner surface of the metal cover to form an effective heat transferring path from the OSA to the cover. | 02-23-2012 |
| 20120043118 | ADHESIVE RESIN COMPOSITION, AND LAMINATE AND FLEXIBLE PRINTED WIRING BOARD USING THE SAME - Provided is an adhesive resin composition containing (A) an epoxy resin and/or a phenoxy resin; (B) an epoxy-containing styrene copolymer containing a monomer unit having an epoxy group and a styrene monomer unit; (C) a thermoplastic resin; and (D) a curing agent, in which the content percentage of the epoxy-containing styrene copolymer (B) relative to the total amount of the resin components contained in the adhesive resin composition is 3% to 25% by mass. The adhesive resin composition is a halogen-free adhesive composition having good flame retardancy and a high peel strength. Also provided are a laminate and a flexible printed wiring board that use the adhesive resin composition. | 02-23-2012 |
| 20120040556 | CONNECTING MEMBER-TERMINATED MULTI-CORE COAXIAL CABLE AND METHOD FOR MANUFACTURE THEREOF - A multi-core coaxial cable is composed of includes a plurality of coaxial cables, each of which having an insulator, an outer conductor, and a sheath successively disposed in a coaxial arrangement around a center conductor, and which are collectively covered by a cable sheath. At one end portion of the multi-core coaxial cable, the plurality of coaxial cables are exposed from the cable sheath and arranged in parallel rows. A connecting member is connected to one end of the multi-core coaxial cable, and the center conductors and outer conductors of the plurality of coaxial cables are respectively conductively connected to terminal portions of the connecting member. The covering member is positioned covering the periphery of the plurality of coaxial cables between the cable sheath and the connecting member. | 02-16-2012 |
| 20120040511 | AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME - Seeds are implanted in a regular pattern upon an undersubstrate. An Al | 02-16-2012 |
| 20120040041 | METHOD FOR MANUFACTURING NANO-IMPRINT MOLD, METHOD FOR FORMING RESIN PATTERN BY NANO-IMPRINT TECHNIQUE, AND NANO-IMPRINT MOLD - A nano-imprint mold includes a mold body having a first surface provided with a pattern having projections and recesses, a second surface opposite the first surface and a side surface between the first surface and the second surface; and a mold base having a surface for fixing the mold body thereto. In addition, the second surface of the mold body is fixed to a part of the surface of the mold base, the second surface of the mold body being disposed away from at least a part of an edge of the surface of the mold base. Furthermore, the mold body has a shape such that a width thereof in a direction orthogonal to a direction extending from the first surface toward the second surface decreases from the first surface toward the second surface. | 02-16-2012 |
| 20120037924 | Junction Field-Effect Transistor - A junction field-effect transistor ( | 02-16-2012 |
| 20120037918 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME - A semiconductor device includes a semiconductor layer ( | 02-16-2012 |
| 20120034763 | Method of Manufacturing Nitride Semiconductor Substrate - The present invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S | 02-09-2012 |
| 20120034474 | JOINED PRODUCT - A joined product according to the present invention is a joined product including a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact or a diamond sintered compact serving as a second material to be joined. The first material to be joined and the second material to be joined are joined by a joining material that forms a liquid phase at a temperature exceeding 800° C. and lower than 1000° C. and that is placed between the first material to be joined and the second material to be joined. The first material to be joined and the second material to be joined are joined by resistance heating and pressing at a pressure of 0.1 to 200 MPa. | 02-09-2012 |
| 20120034149 | GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME - The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10 | 02-09-2012 |
| 20120033284 | SEMICONDUCTOR OPTICAL MODULATION DEVICE, MACH-ZEHNDER INTERFEROMETER TYPE SEMICONDUCTOR OPTICAL MODULATOR, AND METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL MODULATION DEVICE - A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer. | 02-09-2012 |
| 20120032740 | AMPLIFIER FOR RECEIVING INTERMITTENT OPTICAL SIGNAL - An amplifier for receiving an optical signal is disclosed. The amplifier provides a response time controller including an integrator with two time constants, a linear amplifier, a hysteresis comparator, an another integrator, and a switch to change the time constant. The switch includes two voltage followers, one of which turns off the switch to set the time constant in a longer state; while, the other of which turns on the switch and reflects the input of the integrator to set the time constant in a shorter state. | 02-09-2012 |
| 20120032191 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate ( | 02-09-2012 |
| 20120032147 | BIOLOGICAL COMPONENT DETECTION DEVICE - Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer | 02-09-2012 |
| 20120032145 | DETECTION DEVICE, LIGHT-RECEIVING ELEMENT ARRAY, SEMICONDUCTOR CHIP, METHOD FOR MANUFACTURING THE SAME, AND OPTICAL SENSOR APPARATUS - A detection device includes a light-receiving element array and a read-out integrated circuit (CMOS), bumps of the light-receiving element array being bonded to bumps of the read-out integrated circuit, and at least one of the light-receiving element array and the read-out integrated circuit having a concaved surface which faces the other. The bonded bumps positioned in a region near the periphery of the arrangement region of the bonded bumps have a larger diameter and a lower height than those of the bumps positioned in a central region. Therefore, it is possible to prevent bonding failure and insulation failure in the bumps from occurring due to a difference in coefficient of thermal expansion, while securing a small size and low cost. | 02-09-2012 |
| 20120031324 | METHOD FOR GROWING GROUP III NITRIDE CRYSTAL - The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates | 02-09-2012 |
| 20120028807 | OXIDE SUPERCONDUCTING COIL, OXIDE-SUPERCONDUCTING-COIL ASSEMBLY, AND ROTATING MACHINE - The invention offers a superconducting coil, which is an oxide superconducting coil | 02-02-2012 |
| 20120028494 | TERMINAL CONNECTOR AND ELECTRIC WIRE WITH TERMINAL CONNECTOR - An electric wire with a terminal connector includes an electric wire and a female terminal connector crimped onto a core wire exposed at the electric wire. A female terminal connector has a wire barrel having a surface to be applied to the core wire. The surface has a plurality of recesses formed therein. Each recess has a parallelogram-shaped opening edge. The opening edge of the recess includes a pair of first opening edges that are parallel to each other and a pair of second opening edges that are parallel to each other and different from the first opening edges. The recesses are spaced in the extending direction of the first opening edges and are spaced in the extending direction of the second opening edges. | 02-02-2012 |
| 20120028447 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer. | 02-02-2012 |
| 20120028423 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a channel layer; forming an electron supply layer on the channel layer; forming a cap layer made of gallium nitride on the electron supply layer; and performing an oxygen plasma treatment to an upper surface of the cap layer at a power density of | 02-02-2012 |
| 20120027039 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure | 02-02-2012 |
| 20120025210 | OPTICAL MODULE ENCLOSING LEAD FRAME AND SEMICONDUCTOR OPTICAL DEVICE MOUNTED ON THE LEAD FRAME WITH TRANSPARAENT MOLD RESIN - An optical module with a new arrangement is disclosed. The optical module molds devices with a resin transparent to light subject to the device mounted on the lead frame and electrically connected with the lead frame by the bonding wire. The lead frame provides a screen apart from the device by a distance substantially comparable with a dimension of the device. The screen compensates the stress induced in the bonding wire due to a large discrepancy on the thermal expansion coefficient of the transparent resin. | 02-02-2012 |
| 20120025208 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; forming a Si film made of silicon on a main surface of the base substrate; fabricating a stacked substrate by placing the SiC substrate on and in contact with the Si film; and connecting the base substrate and the SiC substrate to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate and a region making contact with the SiC substrate in the Si film. | 02-02-2012 |
| 20120025206 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first GaN layer provided on a SIC substrate, a second GaN layer provided on the first GaN layer, and an electron supply layer that is provided on the second GaN layer and has a band gap greater than that of GaN, the first GaN layer having an acceptor concentration higher than that of the second GaN layer. | 02-02-2012 |
| 20120025205 | SEMICONDUCTOR DEVICE - A semiconductor device includes an AlGaN layer that is provided on a SiC substrate and has an acceptor concentration equal to or higher than a donor concentration, a GaN layer provided on the AlGaN layer, and an electron supply layer that is provided on the GaN layer and has a band gap greater than that of GaN. | 02-02-2012 |
| 20120025204 | SEMICONDUCTOR DEVICE HAVING Si-SUBSTRATE AND PROCESS TO FORM THE SAME - A semiconductor device and a process to form the semiconductor device are disclosed. The semiconductor device includes a Si substrate, active devices primarily made of nitride based compound semiconductor material, and passive devices. The Si substrate includes a via hole piercing from the back surface to the primary surface of the Si substrate. The active device is mounted on the primary surface so as to cover at least a portion of the via hole. The metal layer cover the whole back surface, inner surfaces of the via hole, and the back surface of the active device exposed in the via hole. | 02-02-2012 |
| 20120025203 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first GaN layer formed on a substrate, the first GaN layer including a transition metal and an impurity under constant concentration, the impurity forming a deeper energy level in the first GaN layer than energy level formed by the transition metal, a second GaN layer formed on the first GaN layer, the second GaN layer including the transition metal and the impurity under inclined concentration, an inclined direction of the transition metal being same as an inclined direction of the impurity, and an electron supply layer formed on the second GaN layer. | 02-02-2012 |
| 20120025202 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a silicon substrate; a buffer layer provided on the silicon substrate and has a band gap greater than GaN; a first GaN layer provided on the buffer layer; and a second GaN layer provided directly on the first GaN layer, a carbon concentration of the first GaN layer being higher than a carbon concentration of the second GaN layer. | 02-02-2012 |
| 20120025188 | SEMICONDUCTOR DEVICE INTEGRATED WITH MONITORING DEVICE IN CENTER THEREOF - One type of a semiconductor device integrating with a monitoring device is disclosed. The device includes a plurality of gate fingers, two of which arranged in a center of the device has a space wider than a space between any other fingers to suppress the heat concentration on the center of the device. The monitoring region is arranged in this wider space to monitor the temperature dependence of the device. | 02-02-2012 |
| 20120024231 | SEMICONDUCTOR GROWING APPARATUS - A semiconductor growing apparatus including: susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor. | 02-02-2012 |
| 20120024227 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 02-02-2012 |
| 20120022708 | POWER SUPPLY CONTROLLER AND CONTROL METHOD THEREOF - A power supply controller is connected between a power source and a power-supply path, and includes a switch circuit, a power-supply path protection circuit, and a sleep mode setting circuit. The switch circuit is configured to permit and inhibit power supply from the power source to the load. The protection circuit controls switching operation of the switch circuit according to a power-supply command signal commanding start or stop of the power supply to the load, calculates a temperature of the power-supply path regardless of whether power is supplied to the load, do not calculate the temperature of the power-supply path in a sleep mode, and inhibits power supply to the switch circuit according to the calculated temperature reaching an upper limit. The sleep mode setting circuit sets the power supply controller to the sleep mode according to the of the power-supply path satisfying a temperature condition. | 01-26-2012 |
| 20120021597 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer. | 01-26-2012 |
| 20120021591 | Method of Manufacturing Nitride Substrate for Semiconductors - In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow. | 01-26-2012 |
| 20120021572 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode. | 01-26-2012 |
| 20120020611 | OPTICAL DEVICE PROVIDING ALIGNMENT SUBSTRATE FOR EMITTING WHITE LIGHT - An optical device that emits white light by mixing three or four light each having a specific color is disclosed. The optical device includes the alignment substrate having a first type of grooves each setting an optical fiber therein and a second type of a groove setting all fibers collectively. Between two type of grooves, all fibers are free from grooves to facilitate the assemble of the fibers. | 01-26-2012 |
| 20120020377 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a lower cladding layer; an active layer disposed on the lower cladding layer; all upper cladding layer disposed on the active layer; a diffraction-grating layer disposed on the upper cladding layer, the diffraction-grating layer including periodic projections and recesses; and a buried layer disposed on the periodic projections and recesses in the diffraction-grating layer. In addition, the diffraction-grating layer and the buried layer constitute a diffraction grating. The lower cladding layer, the active layer, and the upper cladding layer constitute a first optical waveguide, the active layer constituting a first core region in the first optical waveguide. The upper cladding layer, the diffraction-grating layer, and the buried layer constitute a second optical waveguide, the diffraction-grating layer constituting a second core region in the second optical waveguide. Furthermore, the first optical waveguide and the second optical waveguide are optically coupled through the upper cladding layer. | 01-26-2012 |
| 20120018743 | SEMICONDUCTOR DEVICE - A MOSFET includes a silicon carbide substrate including a main surface having an off angle of not less than 50° and not more than 65° with respect to a {0001} plane, a buffer layer and a drift layer formed on the main surface, a gate oxide film formed on and in contact with the drift layer, and a p type body region of a p conductivity type formed in the drift layer to include a region in contact with the gate oxide film. The p type body region has a p type impurity density of not less than 5×10 | 01-26-2012 |
| 20120018622 | DIFFERENTIAL AMPLIFIER WITH FUNCTION OF VARIABLE GAIN AND OPTICAL RECEIVER IMPLEMENTED WITH THE SAME - A differential circuit with a function of a variable gain without shifting the output cross point is disclosed. The differential circuit includes an amplifying stage and a control stage. The amplifying stage includes three units each having a pair of transistors, a pair of load resistors, and a pair of current sources. The second and third units each put between the first unit and the load resistor to bypass the current. The control stage includes two units and two current sources to compensate the current bypassed by the second or third unit to keep the DC output level substantially in constant. | 01-26-2012 |
| 20120017826 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A supporting portion ( | 01-26-2012 |
| 20120015499 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. | 01-19-2012 |
| 20120014654 | OPTICAL FIBER AND METHOD FOR MANUFACTURING SAME - Provided is an optical fiber having a large relative refractive index difference and a reduced transmission loss, as well as a manufacturing method therefor. An optical fiber preform | 01-19-2012 |
| 20120012945 | SEMICONDUCTOR DEVICE - A semiconductor device includes source electrodes having source fingers, drain electrodes having drain fingers, and gate electrodes having bent portions between steps formed in stepwise side portions of source fingers and steps formed in stepwise side portions of drain fingers and being bent in the bent portions along the source fingers and the drain fingers. A shape of the stepwise side portion of one source finger and that of the stepwise portion of the corresponding drain finger are symmetrical about a midpoint of an imaginary line that connects the other end of the source finger and the other end of the corresponding drain finger. | 01-19-2012 |
| 20120012862 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate. | 01-19-2012 |
| 20120012858 | SEMICONDUCTOR DEVICE - A semiconductor device includes source fingers and drain fingers provided on an active region of a nitride semiconductor layer alternately, gate fingers having a side edge and a distal edge, a first insulation film provided on the nitride semiconductor layer and covers a top face, the side and distal edges of the gate fingers, field plates provided on the first insulation film between the gate fingers and the drain fingers, a minimum distance between the side face of the first insulation film located on the side edge of the gate fingers and the field plate being at least 100 nm, and field plate interconnections provided on the first insulation film and located outside of the active region and electrically connected with the source fingers and the field plates, a minimum distance between the side face of the first insulation film located on the distal edge of the gate fingers and the field plate interconnections being at least 100 nm. | 01-19-2012 |
| 20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
| 20120008660 | III-NITRIDE SEMICONDUCTOR LASER, AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER - Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface | 01-12-2012 |
| 20120007104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device employing silicon carbide, and the like are provided. In the semiconductor device, even when an electrode material and an upper electrode material are different, a problem does not take place at an interface at which these different types of metals are in contact with each other, thus obtaining high reliability in long-term use. | 01-12-2012 |
| 20120006979 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - The present invention relates to a laser processing apparatus and the like having a structure for implementing at the same time both an efficient laser processing in the place where a laser beam is difficult to reach and a laser processing without damages in the place where the laser beam is easy to reach. This laser processing apparatus comprises a laser light source, an irradiation optical system applying a laser beam to an object while scanning the laser beam, a photo-detector detecting the laser beam applied from the irradiation optical system, and a control section of making switching between a continuous oscillation and a pulse oscillation of the laser beam at the laser light source. In particular, the control section makes a continuous oscillation of the laser beam with respect to the laser light source in the case in which the laser beam applied from the irradiation optical system is detected at the photo-detector; while it makes a pulse oscillation of the laser beam with respect to the laser light source in the case in which no laser beam applied from the irradiation optical system is detected at the photo-detector. | 01-12-2012 |
| 20120006263 | FILM DEPOSITION APPARATUS - When a film is to be deposited on a semiconductor substrate or the like in a heating ambient, the semiconductor substrate is caused to warp (curve) to a considerable extent merely due to an increased temperature. The warpage leads to problems such as degradation of the homogeneity of the quality of the film deposited on the substrate and a high possibility of generation of a crack in the substrate. Accordingly, a film deposition apparatus of the present invention heats the substrate both from above and from below a main surface of the substrate so that a temperature gradient (temperature difference) between the upper side and the lower side of the main surface is reduced and the warpage of the substrate is suppressed. More preferably a measurement unit for measuring the curvature or warpage of the substrate is included. | 01-12-2012 |
| 20120006255 | METHOD OF MANUFACTURING SINGLE CRYSTAL - A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film. | 01-12-2012 |
| 20120003823 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed. | 01-05-2012 |
| 20120003822 | Wafer Guide, MOCVD Equipment, and Nitride Semiconductor Growth Method - Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support ( | 01-05-2012 |
| 20120003821 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer. | 01-05-2012 |
| 20120003820 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: | 01-05-2012 |
| 20120003812 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. | 01-05-2012 |
| 20120003811 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A first silicon carbide substrate has a first front-side surface and a first side surface. A second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces of the first and second silicon carbide substrates is disposed between the first side surface and the second side surface. A closing portion is provided to close the gap over the opening. By depositing sublimates from the first and second side surfaces onto the closing portion, a connecting portion is formed to connect the first and second side surfaces to each other so as to close the opening. After the step of forming the connecting portion, the closing portion is removed. | 01-05-2012 |
| 20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
| 20120003348 | NANO-IMPRINT MOLD - A nano-imprint mold includes a mold base; mold body having a first surface and a second surface opposite the first surface; and an elastic body disposed between a surface of the mold base and the first surface of the mold body, the elastic body being composed of resin. The second surface of the mold body is provided with a nano-imprint pattern. In addition, the elastic body has a bulk modulus lower than a bulk modulus of the mold body. | 01-05-2012 |
| 20120001195 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - A semiconductor substrate inclu8des an AlN layer that is formed so as to contact a Si substrate and has an FWMH of a rocking curve of a (002) plane by x-ray diffraction, the FWMH being less than or equal to 1500 seconds, and a GaN-based semiconductor layer formed on the AlN layer. | 01-05-2012 |
| 20120001194 | SEMICONDUCTOR DEVICE - A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer. | 01-05-2012 |
| 20120000069 | METHOD FOR MANUFACTURING ELECTRIC WIRE WITH TERMINAL - A method for manufacturing an electric wire with a terminal, includes crimping a barrel portion of the terminal onto a core wire constructed of metal wires and creating a crack in a metal oxide layer immediately before the crimping. The metal oxide layer is formed on a metal surface of the core wire. The creating of crack is accomplished by applying a mechanical force to the metal oxide layer. | 01-05-2012 |
| 20110319269 | CONTAINER FOR SUPERCONDUCTING APPARATUS AND SUPERCONDUCTING APPARATUS - The invention offers a container for a superconducting apparatus and a superconducting apparatus. The container mounts in it a superconducting coil as a member including a superconductor. The container is provided with a vacuum insulated container | 12-29-2011 |
| 20110318603 | MAGNESIUM ALLOY MEMBER - A magnesium alloy structural member includes a base material composed of a magnesium alloy having an aluminum content of 4.5% by mass to 11% by mass, in which the base material has a pair of first and second surfaces, the first surface and the second surface being opposite each other, in which when a distance between the first surface and the second surface is defined as a thickness and when surface area regions are defined as regions extending from the first and second surfaces to positions 20 μm from the respective first and second surfaces in the thickness direction, in at least both the surface area regions, 10 or more fine precipitates are present in any 20 μm×20 μm subregion of each of the surface area regions, each of the fine precipitates containing both Mg and Al and having a greatest dimension of 0.5 μm to 3 μm. Because at least each of the surface area regions is composed of a microscopic texture in which fine precipitates are dispersed, the magnesium alloy structural member has excellent corrosion resistance without anticorrosion treatment and can be used for housings and so forth. | 12-29-2011 |
| 20110318530 | PRODUCT HAVING THROUGH-HOLE AND LASER PROCESSING METHOD - A processing method of forming a through-hole in a workpiece by means of a pulsed laser beam includes the steps of providing a removable sacrifice layer on the workpiece, forming a through-hole in the workpiece by the laser beam in a state where the sacrifice layer is provided, and removing the sacrifice layer from the workpiece after the step of forming the through-hole. | 12-29-2011 |
| 20110318015 | AMPLIFIER WITH OFFSET COMPENSATOR AND OPTICAL RECEIVER IMPLEMENTED WITH THE SAME - An amplifier for an optical receiver is disclosed. The amplifier includes a common base buffer, a differential amplifier, and some buffer amplifiers, where circuit block from the common base buffer to the buffer amplifiers have the differential arrangement and are connected in series in this order. The amplifier further includes an offset compensator that receives the outputs of the buffer amplifier put in the rear end of the amplifier and outputs control signals, which are complementary to each other and filtered by a low-pass-filter, to the base of the transistors in the common base buffer to compensate the offset appeared in the output of the buffer amplifier. | 12-29-2011 |
| 20110317965 | OPTICAL SUBASSEMBLY WITH OPTICAL DEVICE HAVING CERAMIC PACKAGE - An optical subassembly (OSA) with a newly arranged optical device is disclosed. The OSA provides a ceramic package that installs a semiconductor optical device, a joint portion welded to a lid of the ceramic package, and an optical coupling portion that receives an external optical fiber. In the OSA, the seal ring put between the top of the multi-layered ceramic package and the lid is isolated from the optical device; accordingly, the lid, the joint portion and the optical coupling portion are electrically isolated from the semiconductor optical device even when the OSA is installed in an optical apparatus such as an optical transceiver. | 12-29-2011 |
| 20110317726 | LASER APPARATUS - The present invention relates to a laser apparatus with a structure for realizing a fast response in carrying out a start and an end of output of pulsed laser light while effectively suppressing damage to an optical amplifying medium. The laser apparatus is provided with a seed light source, an optical amplification section, a pulse modulator, a pump power controller, and a main controller. The pulse modulator receives an output start instruction and an output end instruction fed from the main controller and controls a start and an end of output of seed light from the seed light source. The pump power controller receives a pump trigger signal fed from the main controller and increases or decreases a power of pump light supplied to the amplification section. The main controller decreases the power of the pump light supplied to the amplification section, on the occasion of ending the output of the pulsed laser light, and thereafter makes the pulse modulator end the output of the seed light from the seed light source. | 12-29-2011 |
| 20110316622 | ELECTRONIC CIRCUIT - An electronic circuit includes an amplifier that amplifies an input signal, a control circuit configured to generate a control signal by averaging an output signal of the amplifier based on a time constant, a first time constant control circuit configured to generate a first time constant control signal based on the control signal, the first time constant control signal changing the time constant of the control circuit to a second time constant from a first time constant smaller than the second time constant, a second time constant control circuit configured to generate a second time constant control signal by averaging the output signal of the amplifier based on a third time constant between the first time constant and the second time constant, the second time constant control signal changing the time constant of the control circuit to the first time constant from the second time constant, and a bypass circuit bypassing the input signal of the amplifier based on the control signal. | 12-29-2011 |
| 20110315998 | EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER - A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base | 12-29-2011 |
| 20110315997 | GaN Substrate and Method of Its Manufacture, Method of Manufacturing GaN Layer-Bonded Substrate, and Method of Manufacturing Semiconductor Device - The present invention makes available a GaN substrate, and a method of its manufacture, that, with minimal machining allowances, facilitates consistent machining, and makes available a method of manufacturing a GaN layer-bonded substrate, and a semiconductor device, utilizing the GaN substrate. A GaN substrate ( | 12-29-2011 |
| 20110311191 | OPTO-ELECTRO HYBRID CABLE - An opto-electro hybrid cable is an opto-electro hybrid cable that has a plurality of optical fibers and a plurality of electronic wires inside a sheath. The plurality of optical fibers are accommodated in a tube having Shore D hardness of 65 or greater, the plurality of optical fibers are circumferentially disposed to abut on an inner circumference of the tube, and the plurality of electronic wires are disposed around the plurality of optical fibers. | 12-22-2011 |
| 20110309376 | METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR, SILICON CARBIDE SEMICONDUCTOR, AND SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of cleaning an SiC semiconductor capable of exhibiting an effect of cleaning an SiC semiconductor is provided. An SiC semiconductor and an SiC semiconductor device capable of achieving improved characteristics are provided. The method of cleaning an SiC semiconductor includes the steps of forming an oxide film on a surface of an SiC semiconductor (step S | 12-22-2011 |
| 20110309328 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device | 12-22-2011 |
| 20110306185 | METHOD FOR FORMING LAMINATED RESIN FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer on the semiconductor layer; forming a pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer on the non-silicon-containing resin layer; etching the silicon-containing resin layer; selectively etching the non-silicon-containing resin layer; and etching the semiconductor layer. The step of forming the silicon-containing resin layer includes the steps of applying a silicon-containing resin solution with a first viscosity on a surface of the non-silicon-containing resin layer, the silicon-containing resin solution containing a silicon-containing resin and a volatile solvent; heating the silicon-containing resin layer to a first temperature, the silicon-containing resin layer having a second viscosity by heating to the first temperature, the second viscosity being larger than the first viscosity; and applying a rinse solution containing a volatile component to an edge portion of the silicon-containing resin layer. | 12-15-2011 |
| 20110306181 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside. | 12-15-2011 |
| 20110306155 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching the silicon-containing resin layer to have a second pattern reverse to the first pattern; selectively etching the non-silicon-containing resin layer by a RIE method employing a gas mixture containing CF | 12-15-2011 |
| 20110305883 | ADHESIVE RESIN COMPOSITIONS, AND LAMINATES AND FLEXIBLE PRINTED WIRING BOARDS USING SAME - Provided are an adhesive resin composition that is halogen-free, has good adhesiveness, solder heat resistance, and flame retardancy, and has good flow characteristics, and a laminate and a flexible printed wiring board using the same. The adhesive resin composition contains a phosphorus-containing epoxy resin and/or a phosphorus-containing phenoxy resin, a phosphorus-containing polyester resin having a weight-average molecular weight of more than 20,000 and 150,000 or less, another thermoplastic resin, and a curing agent. The adhesive resin composition preferably further contains a benzoxazine compound. Preferably, substantially no inorganic filler is mixed in the adhesive resin composition. | 12-15-2011 |
| 20110300653 | METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device. | 12-08-2011 |
| 20110300354 | COMBINED SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A base portion is prepared which has a supporting layer made of a material different from silicon carbide, and a silicon carbide layer formed on the supporting layer. Each of first and second silicon carbide single-crystals is connected onto the silicon carbide layer of the base portion. In this way, a combined substrate having such a plurality of silicon carbide single-crystals can be provided at low cost. | 12-08-2011 |
| 20110300040 | METHOD FOR PRODUCING SODIUM TUNGSTATE, METHOD FOR COLLECTING TUNGSTEN, APPARATUS FOR PRODUCING SODIUM TUNGSTATE, AND METHOD FOR PRODUCING SODIUM TUNGSTATE AQUEOUS SOLUTION - Provided are a method for producing sodium tungstate by supplying an oxidant made of sodium nitrate or sodium nitrite to bring a tungsten containing material and the oxidant into contact with each other in an atmosphere containing oxygen to thereby continuously produce a reaction product; a method for collecting tungsten using the method; and an apparatus for producing sodium tungstate. Also provided are a method for producing a sodium tungstate aqueous solution in which a reductant is introduced into a melt containing the above-described reaction product which is then dissolved in water; and a method for collecting tungsten using the method. | 12-08-2011 |
| 20110299560 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface, and thereafter a first surface of the substrate product is scribed to form a scribed mark extending in a direction of the a-axis of the hexagonal III-nitride semiconductor. After forming the scribed mark, breakup of the substrate product is carried out by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region. This step results in forming another substrate product and a laser bar. The substrate product is divided into two, the first region and the second region, by a predetermined reference line, and the first and second regions are adjacent to each other. The laser bar has first and second end faces that extend from the first surface to a second surface and are formed by the breakup. The first and second end faces form a laser cavity of the III-nitride semiconductor laser device. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The first and second end faces intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. | 12-08-2011 |
| 20110297963 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 | 12-08-2011 |
| 20110297959 | CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CHAMFERING NITRIDE SEMICONDUCTOR WAFER - Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra 10 nm and Ra 5 μm at edges of wafers. | 12-08-2011 |
| 20110294317 | GROUND CONNECTING DEVICE AND WIRE HARNESS HAVING THE SAME - Provided are a ground connecting device occupying only a little space and a wire harness having the ground connecting device. The ground connecting device comprises first and second ground joint connectors to connect a plurality of first and second grounding wires included in a wire harness to a ground site. The first ground joint connector includes a plurality of first wire terminals to be attached to respective terminal ends of the first grounding wires and a first ground conductor having a first ground-side terminal portion and a first connector housing which holds the first ground conductor. The second ground joint connector includes a plurality of wire terminals to be attached to respective terminal ends of the second remaining grounding wires, and a second ground conductor having a second ground-side terminal portion, and a second connector housing which holds the second ground conductor. The first and second connector housings are stacked above a wall surface while the ground-side terminal portions of the first and second ground conductors are stacked. | 12-01-2011 |
| 20110293293 | TRANS-IMPEDANCE AMPLIFIER WITH VARIABLE BANDWIDTH AND DIGITAL COHERENT OPTICAL RECEIVER INSTALLING THE SAME - A trans-impedance amplifier (TIA) with an adjustable bandwidth is disclosed. The TIA of the present invention includes the amplifying stage and the emitter follower stage arranged in the downstream of the amplifying stage. The transistor in the amplifying stage includes a diode in the emitter thereof to provide a substantial emitter level to the transistor. This diode is biased by another current source with a variable function. The operating point of the diode, in particular, the differential resistance thereof, is variable by the current source, which adjusts the bandwidth of the TIA without affecting the phase characteristic of the TIA. | 12-01-2011 |
| 20110292960 | WAVELENGTH TUNABLE SEMICONDUCTOR LASER - A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion. | 12-01-2011 |
| 20110292956 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch | 12-01-2011 |
| 20110291144 | OPTICAL SEMICONDUCTOR DEVICE - A semiconductor optical module M is disclosed, where it includes a stem | 12-01-2011 |
| 20110287647 | WATER-PROOFING JOINT CONNECTOR - The present invention provides a water-proofing joint connector capable of electrically interconnecting a plurality of terminals, with a simple structure, irrespective of the number of the terminals. The water-proofing joint connector includes a connection conductor, a housing and a cap member. The connecting conductor has a plurality of fitting portions to be fitted with respective terminals, preliminarily held within the housing. The housing includes a plurality of terminal insertion portions and a cap-member insertion portion which opens to an opposite side of the terminal insertion portions. The cap member has a cap portion to close the cap-member insertion portion and a fit detection portion to come into contact with the terminal locking portion elastically displaced by the terminals failing to be fully fitted, to thereby prevent the cap member from being attached to the cap-member insertion portion. | 11-24-2011 |
| 20110287603 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - First and second supported portions each made of silicon carbide and a supporting portion made of silicon carbide are arranged such that the first and second supported portions and the supporting portion face each other and a gap is provided between the first and second supported portions. By sublimating and recrystallizing silicon carbide of the supporting portion, the supporting portion is connected to each of the first and second single-crystal substrates. On this occasion, a through hole is formed in the supporting portion so as to be connected to the gap. Accordingly, a path is formed which allows a fluid to pass through the gap and the through hole. By closing this path, the fluid can be prevented from being leaked through the silicon carbide substrate. | 11-24-2011 |
| 20110287279 | HIGHLY CORROSION-RESISTANT POROUS METAL MEMBER - A porous metal member composed of an alloy at least containing nickel and tungsten is provided. The alloy may contain 50 to 80 wt % of nickel and 20 to 50 wt % of tungsten and may further contain 10 wt % or less of phosphorus and/or 10 wt % or less of boron. Such a porous metal member can be produced by, for example, making a porous base such as a urethane foam be electrically conductive, forming an alloy film containing nickel and tungsten, then removing the porous base from the alloy film, and subsequently reducing the alloy. | 11-24-2011 |
| 20110285486 | PROCESS FOR PRODUCING METALLURGICAL POWDER, PROCESS FOR PRODUCING DUST CORE, DUST CORE, AND COIL COMPONENT - A process for producing metallurgical powder includes a step of coating surfaces of a plurality of first particles | 11-24-2011 |
| 20110284873 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids. | 11-24-2011 |
| 20110284872 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide, and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing the SiC substrate on and in contact with a main surface of the base substrate; connecting the base substrate and the SiC substrate by heating the stacked substrate to allow the base substrate to have a temperature higher than that of the SiC substrate; and forming an epitaxial growth layer on an opposite main surface, to the SiC substrate, of the base substrate connected to the SiC substrate. | 11-24-2011 |
| 20110284871 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A silicon carbide substrate includes a base layer made of silicon carbide, an SiC layer made of single crystal silicon carbide, arranged on the base layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer, and a cover layer made of silicon carbide, formed on a main surface of the base layer at a side opposite to the SiC layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer. | 11-24-2011 |
| 20110280532 | Optical fiber manufacturing method and optical fiber - The present invention relates to, for example, a method of easily manufacturing an optical fiber having any refractive index profile with fewer kinds of rods, and an optical fiber is manufactured by preparing a plurality of rods including at least two kinds of rods having different refractive indexes from each other, bundling rods selected from the plurality of rods to construct two or more rod units, producing a preform including a region in which the two or more rod units are combined so as to have a cross-sectional shape having rotational symmetry of order 2 or more, and manufacturing an optical fiber by drawing the preform. | 11-17-2011 |
| 20110280527 | COMPOSITE OPTICAL FIBER CABLE AND COMPOSITE OPTICAL FIBER CABLE ASSEMBLY - A composite optical fiber cable has coated optical fibers and electric wires disposed inside a sheath. The optical fibers are enclosed within a first protective tube that is situated at the cross-sectional center, while the electric wires are disposed between the first protective tube and the sheath, and are capable of moving in the circumferential direction of the first protective tube. A composite optical fiber cable assembly includes a composite optical fiber cable and a connector attached to the cable. Inside the connector, a wiring portion for wiring the optical fiber to a ferrule and a wiring portion for wiring the electric wire to an electric terminal are disposed within a common space S inside a housing, and at least the wiring portion of the optical fiber which lies inside the space S is covered by a second protective tube. | 11-17-2011 |
| 20110280524 | OPTICAL TRANSCEIVER WITH ENHANCED PRODUCTIVITY - An optical transceiver with an enhanced productivity is disclosed. The optical transceiver of the invention includes a plurality of OSAs, an optical component of an optical multiplexer or an optical de-multiplexer, and inner fibers connecting the OSAs with the optical component. The optical transceiver further includes a gasket to shield the inside of the housing and put the inner fibers therein to guide them. | 11-17-2011 |
| 20110280522 | OPTICAL CONNECTOR MODULE - The object of this invention is to provide an optical connector module | 11-17-2011 |
| 20110278647 | III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND METHOD OF FABRICATING III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE - A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor. | 11-17-2011 |
| 20110278595 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container. | 11-17-2011 |
