| Sumitomo Electric Industries, Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120034763 | Method of Manufacturing Nitride Semiconductor Substrate - The present invention provides a method of manufacturing a nitride semiconductor substrate capable of efficiently manufacturing a nitride semiconductor substrate having a nonpolar plane as a major surface in which polycrystalline growth is minimized. A method of manufacturing a GaN substrate, which is a nitride semiconductor substrate, includes steps (S | 02-09-2012 |
| 20120034474 | JOINED PRODUCT - A joined product according to the present invention is a joined product including a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact or a diamond sintered compact serving as a second material to be joined. The first material to be joined and the second material to be joined are joined by a joining material that forms a liquid phase at a temperature exceeding 800° C. and lower than 1000° C. and that is placed between the first material to be joined and the second material to be joined. The first material to be joined and the second material to be joined are joined by resistance heating and pressing at a pressure of 0.1 to 200 MPa. | 02-09-2012 |
| 20120034149 | GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME - The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10 | 02-09-2012 |
| 20120033284 | SEMICONDUCTOR OPTICAL MODULATION DEVICE, MACH-ZEHNDER INTERFEROMETER TYPE SEMICONDUCTOR OPTICAL MODULATOR, AND METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL MODULATION DEVICE - A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer. | 02-09-2012 |
| 20120032740 | AMPLIFIER FOR RECEIVING INTERMITTENT OPTICAL SIGNAL - An amplifier for receiving an optical signal is disclosed. The amplifier provides a response time controller including an integrator with two time constants, a linear amplifier, a hysteresis comparator, an another integrator, and a switch to change the time constant. The switch includes two voltage followers, one of which turns off the switch to set the time constant in a longer state; while, the other of which turns on the switch and reflects the input of the integrator to set the time constant in a shorter state. | 02-09-2012 |
| 20120032191 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate ( | 02-09-2012 |
| 20120032147 | BIOLOGICAL COMPONENT DETECTION DEVICE - Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer | 02-09-2012 |
| 20120032145 | DETECTION DEVICE, LIGHT-RECEIVING ELEMENT ARRAY, SEMICONDUCTOR CHIP, METHOD FOR MANUFACTURING THE SAME, AND OPTICAL SENSOR APPARATUS - A detection device includes a light-receiving element array and a read-out integrated circuit (CMOS), bumps of the light-receiving element array being bonded to bumps of the read-out integrated circuit, and at least one of the light-receiving element array and the read-out integrated circuit having a concaved surface which faces the other. The bonded bumps positioned in a region near the periphery of the arrangement region of the bonded bumps have a larger diameter and a lower height than those of the bumps positioned in a central region. Therefore, it is possible to prevent bonding failure and insulation failure in the bumps from occurring due to a difference in coefficient of thermal expansion, while securing a small size and low cost. | 02-09-2012 |
| 20120031324 | METHOD FOR GROWING GROUP III NITRIDE CRYSTAL - The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates | 02-09-2012 |
| 20120028807 | OXIDE SUPERCONDUCTING COIL, OXIDE-SUPERCONDUCTING-COIL ASSEMBLY, AND ROTATING MACHINE - The invention offers a superconducting coil, which is an oxide superconducting coil | 02-02-2012 |
| 20120028494 | TERMINAL CONNECTOR AND ELECTRIC WIRE WITH TERMINAL CONNECTOR - An electric wire with a terminal connector includes an electric wire and a female terminal connector crimped onto a core wire exposed at the electric wire. A female terminal connector has a wire barrel having a surface to be applied to the core wire. The surface has a plurality of recesses formed therein. Each recess has a parallelogram-shaped opening edge. The opening edge of the recess includes a pair of first opening edges that are parallel to each other and a pair of second opening edges that are parallel to each other and different from the first opening edges. The recesses are spaced in the extending direction of the first opening edges and are spaced in the extending direction of the second opening edges. | 02-02-2012 |
| 20120028447 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer. | 02-02-2012 |
| 20120028423 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a channel layer; forming an electron supply layer on the channel layer; forming a cap layer made of gallium nitride on the electron supply layer; and performing an oxygen plasma treatment to an upper surface of the cap layer at a power density of | 02-02-2012 |
| 20120027039 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure | 02-02-2012 |
| 20120025210 | OPTICAL MODULE ENCLOSING LEAD FRAME AND SEMICONDUCTOR OPTICAL DEVICE MOUNTED ON THE LEAD FRAME WITH TRANSPARAENT MOLD RESIN - An optical module with a new arrangement is disclosed. The optical module molds devices with a resin transparent to light subject to the device mounted on the lead frame and electrically connected with the lead frame by the bonding wire. The lead frame provides a screen apart from the device by a distance substantially comparable with a dimension of the device. The screen compensates the stress induced in the bonding wire due to a large discrepancy on the thermal expansion coefficient of the transparent resin. | 02-02-2012 |
| 20120025208 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; forming a Si film made of silicon on a main surface of the base substrate; fabricating a stacked substrate by placing the SiC substrate on and in contact with the Si film; and connecting the base substrate and the SiC substrate to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate and a region making contact with the SiC substrate in the Si film. | 02-02-2012 |
| 20120025206 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first GaN layer provided on a SIC substrate, a second GaN layer provided on the first GaN layer, and an electron supply layer that is provided on the second GaN layer and has a band gap greater than that of GaN, the first GaN layer having an acceptor concentration higher than that of the second GaN layer. | 02-02-2012 |
| 20120025205 | SEMICONDUCTOR DEVICE - A semiconductor device includes an AlGaN layer that is provided on a SiC substrate and has an acceptor concentration equal to or higher than a donor concentration, a GaN layer provided on the AlGaN layer, and an electron supply layer that is provided on the GaN layer and has a band gap greater than that of GaN. | 02-02-2012 |
| 20120025204 | SEMICONDUCTOR DEVICE HAVING Si-SUBSTRATE AND PROCESS TO FORM THE SAME - A semiconductor device and a process to form the semiconductor device are disclosed. The semiconductor device includes a Si substrate, active devices primarily made of nitride based compound semiconductor material, and passive devices. The Si substrate includes a via hole piercing from the back surface to the primary surface of the Si substrate. The active device is mounted on the primary surface so as to cover at least a portion of the via hole. The metal layer cover the whole back surface, inner surfaces of the via hole, and the back surface of the active device exposed in the via hole. | 02-02-2012 |
| 20120025203 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first GaN layer formed on a substrate, the first GaN layer including a transition metal and an impurity under constant concentration, the impurity forming a deeper energy level in the first GaN layer than energy level formed by the transition metal, a second GaN layer formed on the first GaN layer, the second GaN layer including the transition metal and the impurity under inclined concentration, an inclined direction of the transition metal being same as an inclined direction of the impurity, and an electron supply layer formed on the second GaN layer. | 02-02-2012 |
| 20120025202 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a silicon substrate; a buffer layer provided on the silicon substrate and has a band gap greater than GaN; a first GaN layer provided on the buffer layer; and a second GaN layer provided directly on the first GaN layer, a carbon concentration of the first GaN layer being higher than a carbon concentration of the second GaN layer. | 02-02-2012 |
| 20120025188 | SEMICONDUCTOR DEVICE INTEGRATED WITH MONITORING DEVICE IN CENTER THEREOF - One type of a semiconductor device integrating with a monitoring device is disclosed. The device includes a plurality of gate fingers, two of which arranged in a center of the device has a space wider than a space between any other fingers to suppress the heat concentration on the center of the device. The monitoring region is arranged in this wider space to monitor the temperature dependence of the device. | 02-02-2012 |
| 20120024231 | SEMICONDUCTOR GROWING APPARATUS - A semiconductor growing apparatus including: susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor. | 02-02-2012 |
| 20120024227 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 02-02-2012 |
| 20120022708 | POWER SUPPLY CONTROLLER AND CONTROL METHOD THEREOF - A power supply controller is connected between a power source and a power-supply path, and includes a switch circuit, a power-supply path protection circuit, and a sleep mode setting circuit. The switch circuit is configured to permit and inhibit power supply from the power source to the load. The protection circuit controls switching operation of the switch circuit according to a power-supply command signal commanding start or stop of the power supply to the load, calculates a temperature of the power-supply path regardless of whether power is supplied to the load, do not calculate the temperature of the power-supply path in a sleep mode, and inhibits power supply to the switch circuit according to the calculated temperature reaching an upper limit. The sleep mode setting circuit sets the power supply controller to the sleep mode according to the of the power-supply path satisfying a temperature condition. | 01-26-2012 |
| 20120021597 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer. | 01-26-2012 |
| 20120021591 | Method of Manufacturing Nitride Substrate for Semiconductors - In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow. | 01-26-2012 |
| 20120021572 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode. | 01-26-2012 |
| 20120020611 | OPTICAL DEVICE PROVIDING ALIGNMENT SUBSTRATE FOR EMITTING WHITE LIGHT - An optical device that emits white light by mixing three or four light each having a specific color is disclosed. The optical device includes the alignment substrate having a first type of grooves each setting an optical fiber therein and a second type of a groove setting all fibers collectively. Between two type of grooves, all fibers are free from grooves to facilitate the assemble of the fibers. | 01-26-2012 |
| 20120020377 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a lower cladding layer; an active layer disposed on the lower cladding layer; all upper cladding layer disposed on the active layer; a diffraction-grating layer disposed on the upper cladding layer, the diffraction-grating layer including periodic projections and recesses; and a buried layer disposed on the periodic projections and recesses in the diffraction-grating layer. In addition, the diffraction-grating layer and the buried layer constitute a diffraction grating. The lower cladding layer, the active layer, and the upper cladding layer constitute a first optical waveguide, the active layer constituting a first core region in the first optical waveguide. The upper cladding layer, the diffraction-grating layer, and the buried layer constitute a second optical waveguide, the diffraction-grating layer constituting a second core region in the second optical waveguide. Furthermore, the first optical waveguide and the second optical waveguide are optically coupled through the upper cladding layer. | 01-26-2012 |
| 20120018743 | SEMICONDUCTOR DEVICE - A MOSFET includes a silicon carbide substrate including a main surface having an off angle of not less than 50° and not more than 65° with respect to a {0001} plane, a buffer layer and a drift layer formed on the main surface, a gate oxide film formed on and in contact with the drift layer, and a p type body region of a p conductivity type formed in the drift layer to include a region in contact with the gate oxide film. The p type body region has a p type impurity density of not less than 5×10 | 01-26-2012 |
| 20120018622 | DIFFERENTIAL AMPLIFIER WITH FUNCTION OF VARIABLE GAIN AND OPTICAL RECEIVER IMPLEMENTED WITH THE SAME - A differential circuit with a function of a variable gain without shifting the output cross point is disclosed. The differential circuit includes an amplifying stage and a control stage. The amplifying stage includes three units each having a pair of transistors, a pair of load resistors, and a pair of current sources. The second and third units each put between the first unit and the load resistor to bypass the current. The control stage includes two units and two current sources to compensate the current bypassed by the second or third unit to keep the DC output level substantially in constant. | 01-26-2012 |
| 20120017826 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A supporting portion ( | 01-26-2012 |
| 20120015499 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. | 01-19-2012 |
| 20120014654 | OPTICAL FIBER AND METHOD FOR MANUFACTURING SAME - Provided is an optical fiber having a large relative refractive index difference and a reduced transmission loss, as well as a manufacturing method therefor. An optical fiber preform | 01-19-2012 |
| 20120012945 | SEMICONDUCTOR DEVICE - A semiconductor device includes source electrodes having source fingers, drain electrodes having drain fingers, and gate electrodes having bent portions between steps formed in stepwise side portions of source fingers and steps formed in stepwise side portions of drain fingers and being bent in the bent portions along the source fingers and the drain fingers. A shape of the stepwise side portion of one source finger and that of the stepwise portion of the corresponding drain finger are symmetrical about a midpoint of an imaginary line that connects the other end of the source finger and the other end of the corresponding drain finger. | 01-19-2012 |
| 20120012862 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate. | 01-19-2012 |
| 20120012858 | SEMICONDUCTOR DEVICE - A semiconductor device includes source fingers and drain fingers provided on an active region of a nitride semiconductor layer alternately, gate fingers having a side edge and a distal edge, a first insulation film provided on the nitride semiconductor layer and covers a top face, the side and distal edges of the gate fingers, field plates provided on the first insulation film between the gate fingers and the drain fingers, a minimum distance between the side face of the first insulation film located on the side edge of the gate fingers and the field plate being at least 100 nm, and field plate interconnections provided on the first insulation film and located outside of the active region and electrically connected with the source fingers and the field plates, a minimum distance between the side face of the first insulation film located on the distal edge of the gate fingers and the field plate interconnections being at least 100 nm. | 01-19-2012 |
| 20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
| 20120008660 | III-NITRIDE SEMICONDUCTOR LASER, AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER - Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface | 01-12-2012 |
| 20120007104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device employing silicon carbide, and the like are provided. In the semiconductor device, even when an electrode material and an upper electrode material are different, a problem does not take place at an interface at which these different types of metals are in contact with each other, thus obtaining high reliability in long-term use. | 01-12-2012 |
| 20120006979 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - The present invention relates to a laser processing apparatus and the like having a structure for implementing at the same time both an efficient laser processing in the place where a laser beam is difficult to reach and a laser processing without damages in the place where the laser beam is easy to reach. This laser processing apparatus comprises a laser light source, an irradiation optical system applying a laser beam to an object while scanning the laser beam, a photo-detector detecting the laser beam applied from the irradiation optical system, and a control section of making switching between a continuous oscillation and a pulse oscillation of the laser beam at the laser light source. In particular, the control section makes a continuous oscillation of the laser beam with respect to the laser light source in the case in which the laser beam applied from the irradiation optical system is detected at the photo-detector; while it makes a pulse oscillation of the laser beam with respect to the laser light source in the case in which no laser beam applied from the irradiation optical system is detected at the photo-detector. | 01-12-2012 |
| 20120006263 | FILM DEPOSITION APPARATUS - When a film is to be deposited on a semiconductor substrate or the like in a heating ambient, the semiconductor substrate is caused to warp (curve) to a considerable extent merely due to an increased temperature. The warpage leads to problems such as degradation of the homogeneity of the quality of the film deposited on the substrate and a high possibility of generation of a crack in the substrate. Accordingly, a film deposition apparatus of the present invention heats the substrate both from above and from below a main surface of the substrate so that a temperature gradient (temperature difference) between the upper side and the lower side of the main surface is reduced and the warpage of the substrate is suppressed. More preferably a measurement unit for measuring the curvature or warpage of the substrate is included. | 01-12-2012 |
| 20120006255 | METHOD OF MANUFACTURING SINGLE CRYSTAL - A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film. | 01-12-2012 |
| 20120003823 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed. | 01-05-2012 |
| 20120003822 | Wafer Guide, MOCVD Equipment, and Nitride Semiconductor Growth Method - Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support ( | 01-05-2012 |
| 20120003821 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer. | 01-05-2012 |
| 20120003820 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: | 01-05-2012 |
| 20120003812 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. | 01-05-2012 |
| 20120003811 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A first silicon carbide substrate has a first front-side surface and a first side surface. A second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces of the first and second silicon carbide substrates is disposed between the first side surface and the second side surface. A closing portion is provided to close the gap over the opening. By depositing sublimates from the first and second side surfaces onto the closing portion, a connecting portion is formed to connect the first and second side surfaces to each other so as to close the opening. After the step of forming the connecting portion, the closing portion is removed. | 01-05-2012 |
| 20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
| 20120003348 | NANO-IMPRINT MOLD - A nano-imprint mold includes a mold base; mold body having a first surface and a second surface opposite the first surface; and an elastic body disposed between a surface of the mold base and the first surface of the mold body, the elastic body being composed of resin. The second surface of the mold body is provided with a nano-imprint pattern. In addition, the elastic body has a bulk modulus lower than a bulk modulus of the mold body. | 01-05-2012 |
| 20120001195 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - A semiconductor substrate inclu8des an AlN layer that is formed so as to contact a Si substrate and has an FWMH of a rocking curve of a (002) plane by x-ray diffraction, the FWMH being less than or equal to 1500 seconds, and a GaN-based semiconductor layer formed on the AlN layer. | 01-05-2012 |
| 20120001194 | SEMICONDUCTOR DEVICE - A semiconductor device includes a Si substrate having a principal plane that is a crystal surface inclined at an off angle of 0.1 degrees or less with respect to a (111) plane, an AlN layer that is provided so as to contact the principal plane of the Si substrate and is configured so that an FWHM of a rocking curve of a (002) plane by x-ray diffraction is not greater than 2000 seconds, and a GaN-based semiconductor layer formed on the AlN layer. | 01-05-2012 |
| 20120000069 | METHOD FOR MANUFACTURING ELECTRIC WIRE WITH TERMINAL - A method for manufacturing an electric wire with a terminal, includes crimping a barrel portion of the terminal onto a core wire constructed of metal wires and creating a crack in a metal oxide layer immediately before the crimping. The metal oxide layer is formed on a metal surface of the core wire. The creating of crack is accomplished by applying a mechanical force to the metal oxide layer. | 01-05-2012 |
| 20110319269 | CONTAINER FOR SUPERCONDUCTING APPARATUS AND SUPERCONDUCTING APPARATUS - The invention offers a container for a superconducting apparatus and a superconducting apparatus. The container mounts in it a superconducting coil as a member including a superconductor. The container is provided with a vacuum insulated container | 12-29-2011 |
| 20110318603 | MAGNESIUM ALLOY MEMBER - A magnesium alloy structural member includes a base material composed of a magnesium alloy having an aluminum content of 4.5% by mass to 11% by mass, in which the base material has a pair of first and second surfaces, the first surface and the second surface being opposite each other, in which when a distance between the first surface and the second surface is defined as a thickness and when surface area regions are defined as regions extending from the first and second surfaces to positions 20 μm from the respective first and second surfaces in the thickness direction, in at least both the surface area regions, 10 or more fine precipitates are present in any 20 μm×20 μm subregion of each of the surface area regions, each of the fine precipitates containing both Mg and Al and having a greatest dimension of 0.5 μm to 3 μm. Because at least each of the surface area regions is composed of a microscopic texture in which fine precipitates are dispersed, the magnesium alloy structural member has excellent corrosion resistance without anticorrosion treatment and can be used for housings and so forth. | 12-29-2011 |
| 20110318530 | PRODUCT HAVING THROUGH-HOLE AND LASER PROCESSING METHOD - A processing method of forming a through-hole in a workpiece by means of a pulsed laser beam includes the steps of providing a removable sacrifice layer on the workpiece, forming a through-hole in the workpiece by the laser beam in a state where the sacrifice layer is provided, and removing the sacrifice layer from the workpiece after the step of forming the through-hole. | 12-29-2011 |
| 20110318015 | AMPLIFIER WITH OFFSET COMPENSATOR AND OPTICAL RECEIVER IMPLEMENTED WITH THE SAME - An amplifier for an optical receiver is disclosed. The amplifier includes a common base buffer, a differential amplifier, and some buffer amplifiers, where circuit block from the common base buffer to the buffer amplifiers have the differential arrangement and are connected in series in this order. The amplifier further includes an offset compensator that receives the outputs of the buffer amplifier put in the rear end of the amplifier and outputs control signals, which are complementary to each other and filtered by a low-pass-filter, to the base of the transistors in the common base buffer to compensate the offset appeared in the output of the buffer amplifier. | 12-29-2011 |
| 20110317965 | OPTICAL SUBASSEMBLY WITH OPTICAL DEVICE HAVING CERAMIC PACKAGE - An optical subassembly (OSA) with a newly arranged optical device is disclosed. The OSA provides a ceramic package that installs a semiconductor optical device, a joint portion welded to a lid of the ceramic package, and an optical coupling portion that receives an external optical fiber. In the OSA, the seal ring put between the top of the multi-layered ceramic package and the lid is isolated from the optical device; accordingly, the lid, the joint portion and the optical coupling portion are electrically isolated from the semiconductor optical device even when the OSA is installed in an optical apparatus such as an optical transceiver. | 12-29-2011 |
| 20110317726 | LASER APPARATUS - The present invention relates to a laser apparatus with a structure for realizing a fast response in carrying out a start and an end of output of pulsed laser light while effectively suppressing damage to an optical amplifying medium. The laser apparatus is provided with a seed light source, an optical amplification section, a pulse modulator, a pump power controller, and a main controller. The pulse modulator receives an output start instruction and an output end instruction fed from the main controller and controls a start and an end of output of seed light from the seed light source. The pump power controller receives a pump trigger signal fed from the main controller and increases or decreases a power of pump light supplied to the amplification section. The main controller decreases the power of the pump light supplied to the amplification section, on the occasion of ending the output of the pulsed laser light, and thereafter makes the pulse modulator end the output of the seed light from the seed light source. | 12-29-2011 |
| 20110316622 | ELECTRONIC CIRCUIT - An electronic circuit includes an amplifier that amplifies an input signal, a control circuit configured to generate a control signal by averaging an output signal of the amplifier based on a time constant, a first time constant control circuit configured to generate a first time constant control signal based on the control signal, the first time constant control signal changing the time constant of the control circuit to a second time constant from a first time constant smaller than the second time constant, a second time constant control circuit configured to generate a second time constant control signal by averaging the output signal of the amplifier based on a third time constant between the first time constant and the second time constant, the second time constant control signal changing the time constant of the control circuit to the first time constant from the second time constant, and a bypass circuit bypassing the input signal of the amplifier based on the control signal. | 12-29-2011 |
| 20110315998 | EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER - A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base | 12-29-2011 |
| 20110315997 | GaN Substrate and Method of Its Manufacture, Method of Manufacturing GaN Layer-Bonded Substrate, and Method of Manufacturing Semiconductor Device - The present invention makes available a GaN substrate, and a method of its manufacture, that, with minimal machining allowances, facilitates consistent machining, and makes available a method of manufacturing a GaN layer-bonded substrate, and a semiconductor device, utilizing the GaN substrate. A GaN substrate ( | 12-29-2011 |
| 20110311191 | OPTO-ELECTRO HYBRID CABLE - An opto-electro hybrid cable is an opto-electro hybrid cable that has a plurality of optical fibers and a plurality of electronic wires inside a sheath. The plurality of optical fibers are accommodated in a tube having Shore D hardness of 65 or greater, the plurality of optical fibers are circumferentially disposed to abut on an inner circumference of the tube, and the plurality of electronic wires are disposed around the plurality of optical fibers. | 12-22-2011 |
| 20110309376 | METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR, SILICON CARBIDE SEMICONDUCTOR, AND SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of cleaning an SiC semiconductor capable of exhibiting an effect of cleaning an SiC semiconductor is provided. An SiC semiconductor and an SiC semiconductor device capable of achieving improved characteristics are provided. The method of cleaning an SiC semiconductor includes the steps of forming an oxide film on a surface of an SiC semiconductor (step S | 12-22-2011 |
| 20110309328 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device | 12-22-2011 |
| 20110306185 | METHOD FOR FORMING LAMINATED RESIN FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer on the semiconductor layer; forming a pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer on the non-silicon-containing resin layer; etching the silicon-containing resin layer; selectively etching the non-silicon-containing resin layer; and etching the semiconductor layer. The step of forming the silicon-containing resin layer includes the steps of applying a silicon-containing resin solution with a first viscosity on a surface of the non-silicon-containing resin layer, the silicon-containing resin solution containing a silicon-containing resin and a volatile solvent; heating the silicon-containing resin layer to a first temperature, the silicon-containing resin layer having a second viscosity by heating to the first temperature, the second viscosity being larger than the first viscosity; and applying a rinse solution containing a volatile component to an edge portion of the silicon-containing resin layer. | 12-15-2011 |
| 20110306181 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside. | 12-15-2011 |
| 20110306155 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching the silicon-containing resin layer to have a second pattern reverse to the first pattern; selectively etching the non-silicon-containing resin layer by a RIE method employing a gas mixture containing CF | 12-15-2011 |
| 20110305883 | ADHESIVE RESIN COMPOSITIONS, AND LAMINATES AND FLEXIBLE PRINTED WIRING BOARDS USING SAME - Provided are an adhesive resin composition that is halogen-free, has good adhesiveness, solder heat resistance, and flame retardancy, and has good flow characteristics, and a laminate and a flexible printed wiring board using the same. The adhesive resin composition contains a phosphorus-containing epoxy resin and/or a phosphorus-containing phenoxy resin, a phosphorus-containing polyester resin having a weight-average molecular weight of more than 20,000 and 150,000 or less, another thermoplastic resin, and a curing agent. The adhesive resin composition preferably further contains a benzoxazine compound. Preferably, substantially no inorganic filler is mixed in the adhesive resin composition. | 12-15-2011 |
| 20110300653 | METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device. | 12-08-2011 |
| 20110300354 | COMBINED SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A base portion is prepared which has a supporting layer made of a material different from silicon carbide, and a silicon carbide layer formed on the supporting layer. Each of first and second silicon carbide single-crystals is connected onto the silicon carbide layer of the base portion. In this way, a combined substrate having such a plurality of silicon carbide single-crystals can be provided at low cost. | 12-08-2011 |
| 20110300040 | METHOD FOR PRODUCING SODIUM TUNGSTATE, METHOD FOR COLLECTING TUNGSTEN, APPARATUS FOR PRODUCING SODIUM TUNGSTATE, AND METHOD FOR PRODUCING SODIUM TUNGSTATE AQUEOUS SOLUTION - Provided are a method for producing sodium tungstate by supplying an oxidant made of sodium nitrate or sodium nitrite to bring a tungsten containing material and the oxidant into contact with each other in an atmosphere containing oxygen to thereby continuously produce a reaction product; a method for collecting tungsten using the method; and an apparatus for producing sodium tungstate. Also provided are a method for producing a sodium tungstate aqueous solution in which a reductant is introduced into a melt containing the above-described reaction product which is then dissolved in water; and a method for collecting tungsten using the method. | 12-08-2011 |
| 20110299560 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface, and thereafter a first surface of the substrate product is scribed to form a scribed mark extending in a direction of the a-axis of the hexagonal III-nitride semiconductor. After forming the scribed mark, breakup of the substrate product is carried out by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region. This step results in forming another substrate product and a laser bar. The substrate product is divided into two, the first region and the second region, by a predetermined reference line, and the first and second regions are adjacent to each other. The laser bar has first and second end faces that extend from the first surface to a second surface and are formed by the breakup. The first and second end faces form a laser cavity of the III-nitride semiconductor laser device. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The first and second end faces intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis. | 12-08-2011 |
| 20110297963 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 | 12-08-2011 |
| 20110297959 | CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CHAMFERING NITRIDE SEMICONDUCTOR WAFER - Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra 10 nm and Ra 5 μm at edges of wafers. | 12-08-2011 |
| 20110294317 | GROUND CONNECTING DEVICE AND WIRE HARNESS HAVING THE SAME - Provided are a ground connecting device occupying only a little space and a wire harness having the ground connecting device. The ground connecting device comprises first and second ground joint connectors to connect a plurality of first and second grounding wires included in a wire harness to a ground site. The first ground joint connector includes a plurality of first wire terminals to be attached to respective terminal ends of the first grounding wires and a first ground conductor having a first ground-side terminal portion and a first connector housing which holds the first ground conductor. The second ground joint connector includes a plurality of wire terminals to be attached to respective terminal ends of the second remaining grounding wires, and a second ground conductor having a second ground-side terminal portion, and a second connector housing which holds the second ground conductor. The first and second connector housings are stacked above a wall surface while the ground-side terminal portions of the first and second ground conductors are stacked. | 12-01-2011 |
| 20110293293 | TRANS-IMPEDANCE AMPLIFIER WITH VARIABLE BANDWIDTH AND DIGITAL COHERENT OPTICAL RECEIVER INSTALLING THE SAME - A trans-impedance amplifier (TIA) with an adjustable bandwidth is disclosed. The TIA of the present invention includes the amplifying stage and the emitter follower stage arranged in the downstream of the amplifying stage. The transistor in the amplifying stage includes a diode in the emitter thereof to provide a substantial emitter level to the transistor. This diode is biased by another current source with a variable function. The operating point of the diode, in particular, the differential resistance thereof, is variable by the current source, which adjusts the bandwidth of the TIA without affecting the phase characteristic of the TIA. | 12-01-2011 |
| 20110292960 | WAVELENGTH TUNABLE SEMICONDUCTOR LASER - A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion. | 12-01-2011 |
| 20110292956 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch | 12-01-2011 |
| 20110291144 | OPTICAL SEMICONDUCTOR DEVICE - A semiconductor optical module M is disclosed, where it includes a stem | 12-01-2011 |
| 20110287647 | WATER-PROOFING JOINT CONNECTOR - The present invention provides a water-proofing joint connector capable of electrically interconnecting a plurality of terminals, with a simple structure, irrespective of the number of the terminals. The water-proofing joint connector includes a connection conductor, a housing and a cap member. The connecting conductor has a plurality of fitting portions to be fitted with respective terminals, preliminarily held within the housing. The housing includes a plurality of terminal insertion portions and a cap-member insertion portion which opens to an opposite side of the terminal insertion portions. The cap member has a cap portion to close the cap-member insertion portion and a fit detection portion to come into contact with the terminal locking portion elastically displaced by the terminals failing to be fully fitted, to thereby prevent the cap member from being attached to the cap-member insertion portion. | 11-24-2011 |
| 20110287603 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - First and second supported portions each made of silicon carbide and a supporting portion made of silicon carbide are arranged such that the first and second supported portions and the supporting portion face each other and a gap is provided between the first and second supported portions. By sublimating and recrystallizing silicon carbide of the supporting portion, the supporting portion is connected to each of the first and second single-crystal substrates. On this occasion, a through hole is formed in the supporting portion so as to be connected to the gap. Accordingly, a path is formed which allows a fluid to pass through the gap and the through hole. By closing this path, the fluid can be prevented from being leaked through the silicon carbide substrate. | 11-24-2011 |
| 20110287279 | HIGHLY CORROSION-RESISTANT POROUS METAL MEMBER - A porous metal member composed of an alloy at least containing nickel and tungsten is provided. The alloy may contain 50 to 80 wt % of nickel and 20 to 50 wt % of tungsten and may further contain 10 wt % or less of phosphorus and/or 10 wt % or less of boron. Such a porous metal member can be produced by, for example, making a porous base such as a urethane foam be electrically conductive, forming an alloy film containing nickel and tungsten, then removing the porous base from the alloy film, and subsequently reducing the alloy. | 11-24-2011 |
| 20110285486 | PROCESS FOR PRODUCING METALLURGICAL POWDER, PROCESS FOR PRODUCING DUST CORE, DUST CORE, AND COIL COMPONENT - A process for producing metallurgical powder includes a step of coating surfaces of a plurality of first particles | 11-24-2011 |
| 20110284873 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids. | 11-24-2011 |
| 20110284872 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide, and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing the SiC substrate on and in contact with a main surface of the base substrate; connecting the base substrate and the SiC substrate by heating the stacked substrate to allow the base substrate to have a temperature higher than that of the SiC substrate; and forming an epitaxial growth layer on an opposite main surface, to the SiC substrate, of the base substrate connected to the SiC substrate. | 11-24-2011 |
| 20110284871 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A silicon carbide substrate includes a base layer made of silicon carbide, an SiC layer made of single crystal silicon carbide, arranged on the base layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer, and a cover layer made of silicon carbide, formed on a main surface of the base layer at a side opposite to the SiC layer, and having a concentration of inevitable impurities lower than the concentration of inevitable impurities in the base layer. | 11-24-2011 |
| 20110280532 | Optical fiber manufacturing method and optical fiber - The present invention relates to, for example, a method of easily manufacturing an optical fiber having any refractive index profile with fewer kinds of rods, and an optical fiber is manufactured by preparing a plurality of rods including at least two kinds of rods having different refractive indexes from each other, bundling rods selected from the plurality of rods to construct two or more rod units, producing a preform including a region in which the two or more rod units are combined so as to have a cross-sectional shape having rotational symmetry of order 2 or more, and manufacturing an optical fiber by drawing the preform. | 11-17-2011 |
| 20110280527 | COMPOSITE OPTICAL FIBER CABLE AND COMPOSITE OPTICAL FIBER CABLE ASSEMBLY - A composite optical fiber cable has coated optical fibers and electric wires disposed inside a sheath. The optical fibers are enclosed within a first protective tube that is situated at the cross-sectional center, while the electric wires are disposed between the first protective tube and the sheath, and are capable of moving in the circumferential direction of the first protective tube. A composite optical fiber cable assembly includes a composite optical fiber cable and a connector attached to the cable. Inside the connector, a wiring portion for wiring the optical fiber to a ferrule and a wiring portion for wiring the electric wire to an electric terminal are disposed within a common space S inside a housing, and at least the wiring portion of the optical fiber which lies inside the space S is covered by a second protective tube. | 11-17-2011 |
| 20110280524 | OPTICAL TRANSCEIVER WITH ENHANCED PRODUCTIVITY - An optical transceiver with an enhanced productivity is disclosed. The optical transceiver of the invention includes a plurality of OSAs, an optical component of an optical multiplexer or an optical de-multiplexer, and inner fibers connecting the OSAs with the optical component. The optical transceiver further includes a gasket to shield the inside of the housing and put the inner fibers therein to guide them. | 11-17-2011 |
| 20110280522 | OPTICAL CONNECTOR MODULE - The object of this invention is to provide an optical connector module | 11-17-2011 |
| 20110278647 | III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND METHOD OF FABRICATING III-NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE - A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor. | 11-17-2011 |
| 20110278595 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container. | 11-17-2011 |
| 20110278594 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide. | 11-17-2011 |
| 20110278593 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible. | 11-17-2011 |
| 20110278588 | Method of Preparing and Storing GaN Substrate, Prepared and Stored GaN Substrate, and Semiconductor Device and Method of Its Manufacture - A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m | 11-17-2011 |
| 20110278047 | FLEXIBLE PRINTED CIRCUIT BOARD - A flexible printed circuit board includes: a substrate having a first edge and a second edge; a first wiring pattern disposed on the substrate and having a lead connection portion at a side of the first edge of the substrate; a second wiring pattern disposed on the substrate and having a lead connection portion at a side of the first edge of the substrate; a first solder pattern disposed on the lead connection portion of the first wiring pattern; and a second solder pattern disposed on the lead connection portion of the second wiring pattern and having a length longer than the first solder pattern. | 11-17-2011 |
| 20110275224 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A material substrate is prepared which has a first surface and a second surface opposite to each other in a thickness direction and is made of silicon carbide. The material substrate is partially carbonized to divide the material substrate into a carbonized portion made of a material obtained by carbonizing silicon carbide, and a silicon carbide portion made of silicon carbide. This step of partially carbonizing the material substrate is performed to partially carbonize the second surface. In order to adjust a shape of the material substrate when viewed in a planar view, a portion of the material substrate is removed. This step of removing the portion of the material substrate includes the step of processing the carbonized portion. Accordingly, a silicon carbide substrate having a desired planar shape can be obtained readily. | 11-10-2011 |
| 20110274879 | CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME - An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×10 | 11-10-2011 |
| 20110272734 | Light-Emitting Device Substrate - The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device | 11-10-2011 |
| 20110272193 | Construction for stopping water from penetrating into drain wire contained in shielded wire and method for stopping water from penetrating thereinto - A Drain wire led out from the interior to the exterior of a shielded wire is covered with a heat shrinkable tube made of an insulating resin or with a rubber tube including silicon or EPDM (ethylene-propylene rubber). A water-stop agent is penetrated between the element wires of the drain wire in the heat shrinkable tube or the rubber tube. In addition, A boundary portion between a terminal connected to an end of the drain wire and the heat shrinkable tube is covered with a rubber stopper. | 11-10-2011 |
| 20110272087 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - Upon arranging a base portion and first and second silicon carbide layers such that each of a first backside surface of the first silicon carbide layer and a second backside surface of the second silicon carbide layer faces a first main surface of the base portion, at least one of the first and second silicon carbide layers is partially projected as a projection to outside the first main surface when viewed in a planar view. Each of the first and second backside surfaces and the first main surface are connected to each other by heating. This heating carbonizes at least a part of the projection, thereby forming a carbonized portion. When removing the projection, the carbonized portion is processed. In this way, the planar shape of a silicon carbide substrate can be readily adjusted. | 11-10-2011 |
| 20110269323 | GROUND JOINT CONNECTOR AND WIRE HARNESS INCLUDING THE SAME - The present invention provides a ground joint connector capable of collectively connecting a plurality of grounding wires included in a wire harness for a vehicle, to a given ground site, while occupying a little space. The ground joint connector JC comprises a plurality of wire terminals to be attached to respective terminal ends of the grounding wires, a grounding conductor a connector housing holding the grounding conductor. The grounding conductor includes a plurality of wire-side terminal portions to be fitted to the respective wire terminals in a terminal fitting direction and a ground-side terminal portion to be connected to the ground site while fixed onto the wall surface around the ground site. The wire-side terminal portions aligned in a direction approximately perpendicular to the terminal fitting direction and parallel to the wall surface, and integrally joined to the ground-side terminal portion. The connector housing holds the grounding conductor to allow the ground-side terminal portion to protrude to outside and includes a plurality of terminal receiving chambers and a plurality of terminal locking portions. The terminal locking portions lock the respective wire terminals inserted into the respective terminal receiving chambers and fitted with the respective wire-side terminal portions. | 11-03-2011 |
| 20110268986 | MAGNESIUM ALLOY MEMBER AND METHOD FOR PRODUCING SAME - The method of producing a magnesium alloy joined part has the following steps: a joining step of joining a reinforcing material made of metal to a plate material made of magnesium alloy without allowing an organic material to remain at the joined portion and a plastic-working step of performing plastic working on the plate material to which the reinforcing material is joined. A desirable means of joining the reinforcing material to the plate material can be to use an inorganic adhesive. Because the magnesium alloy joined part is formed by a structure in which the reinforcing material is joined to the plate material, in comparison with the case where the reinforcing material is formed by machining or the like, the magnesium alloy structural member can be obtained with high production efficiency. | 11-03-2011 |
| 20110268454 | LD DRIVER WITH AN IMPROVED FALLING EDGE OF DRIVING SIGNAL AND OPTICAL TRANSMITTER PROVIDING THE SAME - An LD driver to generate an asymmetrical driving current with a relatively faster falling edge and an optical transmitter having the LD driver are disclosed. The LD driver includes a primary driver and the sub-driver connected in parallel to the primary driver. The primary driver converts the input signal or the delayed signal delayed from the input signal into the primary current. The sub-driver generates a symmetrical current tracing the input or the delayed signal, and an asymmetrical current formed by the OR operation between the input and delayed signals. The driving current is formed by adding the primary current, the symmetrical current and the asymmetrical current. | 11-03-2011 |
| 20110268145 | OPTICAL COMPONENT - At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like. | 11-03-2011 |
| 20110266026 | FLAME RETARDANT, FLAME-RETARDANT RESIN COMPOSITION, AND INSULATED WIRE - A flame retardant, a flame-retardant resin composition and an insulated wire that have an excellent low-temperature property and cold-resistance property, and high manufacturability. The flame retardant contains magnesium hydroxide that is obtained by chemical synthesis, and a surface treatment agent that contains an organic polymer having a melting point of 150° C. or more, with the surface treatment agent, a surface of the magnesium hydroxide being treated. The flame-retardant resin composition contains the flame retardant and a resin that is a base material. The insulated wire is prepared by covering and insulating a conductor with the flame-retardant resin composition. | 11-03-2011 |
| 20110266025 | FLAME-RETARDANT RESIN COMPOSITION, AND INSULATED WIRE - A flame-retardant resin composition that has an excellent cold-resistance property and wear-resistance property even when containing as a flame retardant a metallic hydrate such as magnesium hydroxide, and an insulated wire including the composition. The resin composition contains a flame retardant mainly consisting of a metallic hydrate, and a base resin, wherein the base resin contains two or more kinds of polyolefin resins having a flexural modulus of 2000 MPa or more, wherein at least one of the polyolefin resins has a melt flow rate (MFR) of 5 g/10 min or less. The base resin preferably further contains a polyolefin resin having a melt flow rate (MFR) of more than 5 g/10 min. At least one of the polyolefin resins is preferably a polypropylene resin having a functional group. The insulated wire includes a conductor, and an insulator containing the flame-retardant resin composition, with which the conductor is covered. | 11-03-2011 |
| 20110265709 | Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus - Nitride semiconductor crystal manufacturing method according to which the following steps are carried out. To begin with, a crucible ( | 11-03-2011 |
| 20110262681 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A carbon layer is formed on a first region of a main surface of a material substrate. On the material substrate, first and second single-crystal layers are arranged such that each of a first backside surface of the first single-crystal layer and a second backside surface of the second single-crystal layer has a portion facing a second region of the main surface of the material substrate and such that a gap between a first side surface of the first single-crystal layer and a second side surface of the second single-crystal layer is located over the carbon layer. By heating the material substrate and the first and second single-crystal layers, a base substrate connected to each of the first and second backside surfaces is formed. In this way, voids can be prevented from being formed in the silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
| 20110262680 | SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A sublimation preventing layer is formed to cover a first region of a main surface of a material substrate. First and second single-crystal layers are arranged on the material substrate such that a gap between first and second side surfaces is located over the sublimation preventing layer. The material substrate and the first and second single-crystal layers are heated to sublimate silicon carbide from a second region of the main surface and recrystallize the sublimated silicon carbide on the first backside surface of the first single-crystal layer and the second backside surface of the second single-crystal layer, thereby forming a base substrate connected to each of the first and second backside surfaces. This can prevent formation of voids in a silicon carbide substrate having such a plurality of single-crystal layers. | 10-27-2011 |
| 20110262083 | OPTICAL CONNECTOR MODULE - There is provided an optical connector module in which an adhesive is interposed between a lens and a distal surface of an optical fiber, wherein the module includes a transparent positioning device and an optical fiber fixed in the positioning device. The positioning device has a lens provided to an end surface, a concave insertion portion into which the optical fiber is inserted and which is disposed so that the bottom surface in contact with the distal surface of the optical fiber is positioned opposite the lens, and a debris receiving portion that extends from the bottom surface in a radial direction of the optical fiber and has a surface continuous with the bottom surface. | 10-27-2011 |
| 20110262082 | CONNECTOR COMPONENT - A connector component is provided as one compatible with conductor coupling and fiber coupling. A receptacle | 10-27-2011 |
| 20110262078 | PLUGGABLE OPTICAL TRANSCEIVER HAVING ELECTRICALLY SHIELDED RECEPTACLE, AND OPTICAL CONNECTOR INSTALLED THEREIN - A pluggable optical transceiver is disclosed. The transceiver comprises a plurality of OSAs, an optical member and a plurality of inner fibers to couple the optical member with OSAs. The inner fibers each provides an inner connector to couple with one of OSAs. The housing, which installs the OSAs, the optical member and the inner fiber, is made of metal and has a grooves into which the inner fibers is set so as to arrange them orderly. | 10-27-2011 |
| 20110261359 | GAS MONITORING DEVICE, COMBUSTION STATE MONITORING DEVICE, SECULAR CHANGE MONITORING DEVICE, AND IMPURITY CONCENTRATION MONITORING DEVICE - [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. | 10-27-2011 |
| 20110260295 | III-Nitride Crystal Substrate and III-Nitride Semiconductor Device - Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate ( | 10-27-2011 |
| 20110260175 | SEMICONDUCTOR DEVICE - A silicon carbide layer is provided on a substrate, has a hexagonal single-crystal structure, and has a surface at which a depletion layer is formed. A protective film is insulative and provided on the silicon carbide layer to directly cover the surface. The surface thus directly covered with the protective film includes a portion having an off angle of not more than 10° relative to the {0-33-8} plane of the silicon carbide layer. This results in reduced leakage current flowing in an interface between the protective film and the semiconductor layer. | 10-27-2011 |
| 20110255831 | PLUGGABLE OPTICAL TRANSCEIVER HAVING INNER OPTICAL CONNECTION AND OPTICAL CONNECTOR INSTALLED THEREIN - A pluggable optical transceiver is disclosed. The transceiver comprises a plurality of OSAs, an optical member and a plurality of inner fibers to couple the optical member with OSAs. The inner fibers each provides an inner connector to couple with one of OSAs. The housing, which installs the OSAs, the optical member and the inner fiber, is made of metal and has a grooves into which the inner fibers is set so as to arrange them orderly. | 10-20-2011 |
| 20110254715 | CONTROLLER TO CONTROL ELECTRICAL POWER OF LOAD IN CONSTANT - A heater controller for controlling a heater precisely in the equi-power mode is disclosed. The controller includes a current source, a voltage monitor to detect a voltage drop caused in the heater, and a controller. The voltage drop may be converted to the digital form as refereeing to the first reference, while, the heater current is converted from the digital form as referring to the second reference. The second reference shows substantial temperature dependence, while, the first reference has lesser temperature dependence. The control corrects the temperature dependence of the second reference as referring to the first reference. | 10-20-2011 |
| 20110254017 | MANUFACTURING METHOD FOR CRYSTAL, CRYSTAL, AND SEMICONDUCTOR DEVICE - A manufacturing method for a crystal, a crystal, and a semiconductor device capable of growing a high-quality crystal are provided. The manufacturing method for a crystal of the present invention includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; fixing the backside surface of the seed crystal to a pedestal; and growing the crystal on the frontside surface of the seed crystal. In the step of fixing, the seed crystal is fixed to the pedestal by coating the backside surface of the seed crystal with a Si layer or disposing a Si layer on the backside surface of the seed crystal, and carbonizing the Si layer. | 10-20-2011 |
| 20110250395 | ELECTRODE CONNECTION STRUCTURE, CONDUCTIVE ADHESIVE USED THEREFOR, AND ELECTRONIC DEVICE - There is provided a connecting structure with high reliability produced at low cost through the production process simplified by connecting connection electrodes, each including an organic film as an oxidation preventing film, to each other using a conductive adhesive. An electrode-connecting structure in which a first connection electrode | 10-13-2011 |
| 20110250394 | DIAMOND COATED TOOL - The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 μm and not more than 10 μm and an average length of roughness profile elements RSm of not less than 1 μm and not more than 100 μm, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction. | 10-13-2011 |
| 20110249946 | OPTO ELECTRICAL CONVERTING MODULE AND COMPONENT USED FOR THE SAME - An opto electrical converting module-purpose component includes an optical fiber positioning component having an edge plane, a light emitting element provided on the edge plane, a light receiving element provided on the edge plane, a plurality of leads provided on the edge plane, which are electrically connected to the light emitting element and the light receiving element respectively, and a transimpedance amplifier is provided on the optical fiber positioning component. The edge plane has a plurality of through-holes into which optical fibers are inserted to be fixed. | 10-13-2011 |
| 20110249940 | OPTICAL BRANCHING DEVICE AND OPTICAL COMMUNICATION SYSTEM INCLUDING THE SAME - The present invention provides an optical branching device and an optical communication system which are easy to connect with optical fibers. In the optical branching device, when light emitted from an optical fiber in a front stage is incident on an entrance port of a multicore optical fiber, the light propagates through a first core and then is distributed from the first core to four second cores by core-to-core crosstalk between the first and second cores. The light beams distributed to the four second cores propagate through the respective cores and are emitted to four optical waveguides optically coupled core-to-core thereto within a fan-out part at exit ports. | 10-13-2011 |
| 20110247857 | Conductor of an electric wire, and an insulated wire - A conductor of an electric wire, and an insulated wire which are excellent in corrosion resistance and recyclability, of which the strength which is decreased by weight reduction and diameter reduction is improved. The conductor includes a strand which includes a first elemental wire made from pure copper and a second elemental wire made from a copper alloy. In the conductor, a cross-sectional area of the first elemental wire as a percentage of a cross-sectional area of the conductor is preferably within a range of 10 to 90%. Examples of the copper alloy include a Cu—Ni—Si alloy, and a copper alloy containing Sn, Ag, Mg, or Zn. The conductor may be compressed concentrically. The insulated wire is prepared by covering the conductor with an insulator. | 10-13-2011 |
| 20110247856 | SHIELDED CABLE - There is provided a shielded cable wherein a metal coated resin tape is helically wound, whereby a plurality of signal cables are shielded, and no sudden signal attenuation occurs in high frequency ranges. A shielded cable has a shield conductor produced by helically winding a metal coated resin tape together around the circumference of a plurality of signal wires, upper and lower metal foils are in electrical contact with each other in overlap parts of the winding of the metal coated resin tape. The metal coated resin tape is formed with one edge part folded back so that the metal foil is disposed on an outward side. The overlap width of the winding of the metal coated resin tape is one-quarter to one-half of the tape width. | 10-13-2011 |
| 20110243576 | OPTICAL RECEIVER FOR THE WDM SYSTEM AND THE METHOD FOR CONTROLLING THE SAME - An optical receiver with a simplified arrangement able to compensate the optical loss of the transmission medium is disclosed. The optical receiver of the invention includes an SOA in the front end thereof, an optical de-multiplexer, and a plurality of receiver modules that receives de-multiplexed light. The optical gain of the SOA is adjusted based on the electrical signals output from respective optical modules. When the receiver modules show the output thereof in a preset range, the bias current is kept unchanged, while, one receiver module shows the output out of the range, the bias current is incremented or decremented. When one receiver module shows the output out of the absolute maximum/minimum, the bias current is forced to the initial value. | 10-06-2011 |
| 20110243491 | MACH-ZEHNDER INTERFEROMETER TYPE OPTICAL MODULATOR - A Mach-Zehnder interferometer type optical modulator includes a first end facet and a reflecting portion opposing the first end facet; a single optical coupler including input and output ports, the optical coupler being disposed between the first end facet and the reflecting portion; first and second optical waveguides that are connected to the input ports of the optical coupler; third and fourth optical waveguides that are connected to the output ports of the optical coupler; and a phase shifting section disposed between the optical coupler and the reflecting portion. The phase shifting section includes a first optical waveguide structure constituting part of the third optical waveguide; a first upper electrode on the first optical waveguide structure; a second optical waveguide structure constituting part of the fourth optical waveguide; and a second upper electrode on the second optical waveguide structure. | 10-06-2011 |
| 20110241803 | SIGNAL TRANSMISSION LINE - A signal transmission line includes a dielectric substrate having first and second surfaces opposite to each other, a first conductor layer provided between the first surface and the second surface and set at a ground potential, a first transmission line having a signal conductor that is provided on the first surface and has a capacitive coupling with the first conductor layer, a second transmission line provided on the second surface, and a connecting conductor that passes through the dielectric substrate and connects the signal conductor of the first transmission line and the second transmission line. The first conductor layer has a first opening in which the connecting conductor is located. A distance between the first conductor layer and the connecting conductor in a first direction in which the signal conductor extends is smaller than a distance between the first conductor layer and the connecting conductor in a second direction orthogonal to the first direction. | 10-06-2011 |
| 20110241777 | CONVERSION CIRCUIT FROM SINGLE PHASE SIGNAL TO DIFFERENTIAL PHASE SIGNAL - A differential amplifier showing a suppressed output offset is disclosed. The differential amplifier includes a pair of differential transistors, a pair of cascode transistors, and a reference generator. One of differential transistors receives an AC signal, while, the other of differential transistors receives an average voltage of the AC signal. The reference generator receives the average voltage of the AC signal and outputs a bias commonly provided to the cascode transistor. The bias is raised by a substantially constant level from the average voltage, which compensates the output offset of the differential amplifier. | 10-06-2011 |
| 20110241739 | ELECTRONIC CIRCUIT - A circuit includes: a first line to which input and output signal terminals are connected; a first transistor having a first terminal connected to the first line, a second terminal connected to a ground potential, and a control terminal supplied with a first oscillation signal, the first transistor outputting the first signal and its harmonic component; a second transistor having a first terminal connected to the first line, a second terminal connected to the ground potential, and a control terminal supplied with a second oscillation signal, the second transistor outputting the second signal and its harmonic component; a first harmonic generator connected to the control terminal of the first transistor and generates a harmonic component including the harmonic component by the first transistor; and a second harmonic generator connected to the control terminal of the second transistor and generates a harmonic component including the harmonic component by the second transistor. | 10-06-2011 |
| 20110241022 | SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE - A substrate, the presence of which can be detected with a method similar to a conventional method of detecting a Si substrate even if the substrate is transparent, and a method of manufacturing the substrate are provided. Light incident on an end portion of a transparent substrate is not transmitted through the substrate as with the light incident on a central portion of the substrate, but is totally reflected from a total reflection surface in a detection region present in at least a portion of the end portion of the substrate. A photoelectric sensor can recognize that a ratio of transmission of the light at the end portion of the substrate has become smaller, thereby detecting the presence of the substrate. | 10-06-2011 |
| 20110241016 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element LE | 10-06-2011 |
| 20110236175 | PROCESSING METHOD AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE - There are obtained a processing method that allows adherence of foreign particles to an object to be processed in a load lock chamber to be suppressed, and a fabrication method of a semiconductor device using the processing method. The processing method includes the step of receiving a substrate that is the object to be processed at a load lock chamber (substrate load lock chamber) to load the substrate into a processing chamber where processing is to be applied to the substrate, and reducing internal pressure from a substrate load lock chamber | 09-29-2011 |
| 20110235983 | OPTICAL FIBER CABLE - The present invention relates to an optical fiber cable incorporating a multi-core fiber provided with a plurality of cores and a cladding region. The optical fiber cable has a jacket covering the multi-core fiber. The multi-core fiber is arranged so that a hold wrap holds the cores in a state in which they are provided with a bend of not more than a fixed radius of curvature, in order to reduce crosstalk between the cores. | 09-29-2011 |
| 20110235980 | OPTICAL MODULE WITH OPTICAL AXIS BENT PERPENDICULARLY WITHIN PACKAGE - An optical module on the invention provides a multi-layered ceramic package in which the LD, the sub-mount to mount the LD, the optical component to bend the optical axis of the light emitted from the LD toward the lens, and the monitor PD to monitor a portion of the light transmitted through the optical component. These components are mounted on a metal in the package with an adhesive. At least one of the sub-mount and the optical component provides a chamfer in a front bottom corner thereof to provide a room to receive fillets formed in the surfaces facing to and abutting against the other surface. | 09-29-2011 |
| 20110235971 | SEMICONDUCTOR OPTICAL DEVICE - A semiconductor optical device includes a first optical waveguide including first, second, and third sections; a second optical waveguide including fourth, fifth, and sixth sections; an input optical coupler; and an output optical coupler. The first and second optical waveguides and the input and output optical couplers each include a first cladding layer composed of an n-type semiconductor and a core layer. The second and fifth sections each include an intermediate semiconductor layer on the core layer, and a second cladding layer composed of an n-type semiconductor. The first, third, fourth, and sixth sections and the input and output optical couplers each further include a third cladding layer on the core layer. At least one of the third cladding layers includes a first cladding section on the core layer and a second cladding section on the first cladding section. The second cladding section is composed of a semi-insulating semiconductor. | 09-29-2011 |
| 20110235961 | MACH-ZEHNDER INTERFEROMETER TYPE OPTICAL MODULATOR - A Mach-Zehnder interferometer type optical modulator includes first and third optical waveguides; input and output optical couplers; and a phase shifting section disposed between the input and output optical couplers. The phase shifting section includes first and second optical waveguide structures each including an n-type semiconductor section, a core layer and a cladding layer. The cladding layer of the first optical waveguide structure includes a first section disposed on the core layer, and second and third sections disposed on the first section. The second and third sections are juxtaposed to each other in a direction that intersects a waveguiding direction. The first and second sections are composed of a p-type semiconductor, and the third section is composed of an undoped semiconductor. | 09-29-2011 |
| 20110235667 | SEMICONDUCTOR LASER - A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator. | 09-29-2011 |
| 20110235660 | DRIVER CIRCUIT FOR TUNABLE LD - An LD driver is disclosed where the power dissipation is reduced without enlarging the circuit scale. The LD driver, which drives a tunable LD including a SG-DGB region, a CSG-DBR region, and an SOA region, includes a DC/DC converter connected to current sources or voltage sources each coupled with at least two regions of the SG-DFB, CSG-DBR and SOA regions, and a voltage controller to control the output of the DC/DC converter which is commonly provided to the current sources or the voltage sources. The voltage controller independently monitors the bias conditions of the at least two regions above, and sets the output of the DC/DC converter so as to exceed a largest voltage among voltages currently provided to respective regions by a preset margin to operate the current sources or the voltage sources normally. | 09-29-2011 |
| 20110235659 | SEMICONDUCTOR LASER - A semiconductor laser includes a light emission end facet; a first optical waveguide extending in a predetermined optical-axis direction, the first optical waveguide being optically coupled to the light emission end facet; a ring resonator having a plurality of periodic transmittance peak wavelengths, the ring resonator being optically coupled to the first optical waveguide; a plurality of gain waveguides that generate light by injection of current; an optical coupler portion that optically couples the first optical waveguide to each of the plurality of gain waveguides; and a plurality of second optical waveguides including diffraction gratings, the plurality of second optical waveguides being respectively optically coupled to the plurality of gain waveguides. Also, each of the diffraction gratings in the plurality of second optical waveguides has a different reflection band. | 09-29-2011 |
| 20110235163 | COMPOSITE PHOTONIC STRUCTURE ELEMENT, SURFACE EMITTING LASER USING THE COMPOSITE PHOTONIC STRUCTURE ELEMENT, WAVELENGTH CONVERSION ELEMENT, AND LASER PROCESSING DEVICE USING THE WAVELENGTH CONVERSION ELEMENT - A composite photonic structure element comprises a photonic crystal and multilayer films. The photonic crystal is formed by alternately laminating a plurality of sets of an active layer having a nonlinear effect for converting a fundamental wave into a second harmonic and an inactive layer having no nonlinear effect, and is constructed such that the energy of the fundamental wave coincides with a photonic bandgap end. Each of the multilayer films is formed by laminating a plurality of sets of two kinds of thin films having different refractive indexes and reflects the fundamental wave. The multilayer films are connected to both ends of the photonic crystal. The fundamental wave enters one of end faces and is reciprocally reflected between resonators having the multilayer films, so that the intensity of the fundamental wave is enhanced within the photonic crystal. The fundamental wave is converted into a second harmonic in the active layer, and the second harmonic is taken out from the other end face. | 09-29-2011 |
| 20110233832 | AIR SPRING FOR VEHICLE AND RAILWAY TRUCK FOR VEHICLE - The invention offers an air spring for obtaining a vehicle that renders good comfortableness even at the time of the curved-track running. The air spring for a vehicle has an upper board, a lower board, a diaphragm, and a stopper rubber placed between the lower board and a lower plate. The air spring is provided with a mechanism for restraining the displacement of the stopper rubber, the mechanism having a first restraining member placed on either one of the lower plate and the lower board and a second restraining member placed on the other. The shape of restraining wall surfaces is formed such that in the relative positional relationship between the first and second restraining members, when the first or second restraining member displaces itself such that it delineates an arc by placing the center at the railway truck axis of the railway truck of a vehicle, the spacings between the first and second restraining members at the left side and right side are equal to each other or decrease as the amount of displacement along the arc increases. | 09-29-2011 |
| 20110233561 | SEMICONDUCTOR SUBSTRATE - A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween. | 09-29-2011 |
| 20110232964 | CABLE ASSEMBLY - A cable assembly having sufficient bending resistance has a clamp provided at an end of a multi-core cable. The clamp, which is formed such that the inner diameter thereof increases as it is closer to the rear end, is fixed by caulking to the outer circumference of a sheath. An inner spring and an outer spring are arranged around the outer circumference of a sheath. The inner spring is fixed to the clamp in such a manner as the end thereof on the cable tip side is sandwiched between the sheath and the inner surface of the clamp. The outer spring is shorter than the inner spring in the cable axial direction, and the end thereof on the cable tip side is fixed to the outer circumference of the clamp. The outer circumference of the inner spring and the outer spring is covered with a rubber boot. | 09-29-2011 |
| 20110232564 | METHOD OF GROWING GALLIUM NITRIDE CRYSTAL AND METHOD OF MANUFACTURING GALLIUM NITRIDE CRYSTAL - In a method of growing GaN crystal in one aspect, the following steps are performed. An underlying substrate is prepared. Then, a mask layer having an opening portion and composed of SiO | 09-29-2011 |
| 20110229719 | MANUFACTURING METHOD FOR CRYSTAL, MANUFACTURING APPARATUS FOR CRYSTAL, AND STACKED FILM - A manufacturing method for a crystal, a manufacturing apparatus for a crystal, and a stacked film capable of growing a high-quality crystal are provided. The manufacturing method for a crystal includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; forming at least one film selected from the group consisting of a hard carbon film, a diamond film, a tantalum film, and a tantalum carbide film on the backside surface of the seed crystal; and growing the crystal on the frontside surface of the seed crystal. | 09-22-2011 |
| 20110229096 | PLUGGABLE OPTICAL TRANSCEIVER HAVING FUNCTIONAL LATCH SCREW - A pluggable optical transceiver is disclosed. The transceiver comprises a plurality of OSAs, an optical member and a plurality of inner fibers to couple the optical member with OSAs. The inner fibers each provides an inner connector to couple with one of OSAs. The housing, which installs the OSAs, the optical member and the inner fiber, is made of metal and has a grooves into which the inner fibers is set so as to arrange them orderly. | 09-22-2011 |
| 20110229095 | PLUGGABLE OPTICAL TRANSCEIVER WITH ELECTRICAL PLUG BOARD SEPARATED FROM CIRCUIT BOARD - A pluggable optical transceiver is disclosed. The transceiver comprises a plurality of OSAs, an optical member and a plurality of inner fibers to couple the optical member with OSAs. The inner fibers each provides an inner connector to couple with one of OSAs. The housing, which installs the OSAs, the optical member and the inner fiber, is made of metal and has a grooves into which the inner fibers is set so as to arrange them orderly. | 09-22-2011 |
| 20110228804 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 09-22-2011 |
| 20110227796 | CERAMIC POWDER, DIELECTRIC COMPOSITE MATERIAL CONTAINING THE CERAMIC POWDER, AND DIELECTRIC ANTENNA - Ceramic powder having a BET specific surface area within a range of from 0.1 to 2.0 m | 09-22-2011 |
| 20110227690 | SOFT MAGNETIC MATERIAL, COMPACT, DUST CORE, ELECTROMAGNETIC COMPONENT, METHOD OF PRODUCING SOFT MAGNETIC MATERIAL, AND METHOD OF PRODUCING DUST CORE - A soft magnetic material includes a plurality of magnetic particles, a binder, and a lubricant. The binder binds the plurality of magnetic particles. The lubricant is contained in the aggregate of the bound magnetic particles, and has a melting point less than or equal to 100° C. The method of producing a soft magnetic material includes the steps of forming an additive by mixing a binder and a lubricant including fatty acid monoamide, and binding the plurality of magnetic particles by the additive. | 09-22-2011 |
| 20110227096 | SEMICONDUCTOR DEVICE - A semiconductor device having a construction capable of achieving suppressed deterioration of electric characteristics in an insulating member is provided. An n | 09-22-2011 |
| 20110227035 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate ( | 09-22-2011 |
| 20110226182 | CRUCIBLE, CRYSTAL PRODUCTION DEVICE, AND HOLDER - A crucible includes a body portion having a hollow inner portion, and a projection portion connected to an inner circumferential surface of the body portion and projecting toward the inner portion. The projection portion has a side surface provided with a thread. A holder includes a base and a protrusion connected to an end portion of the base. The protrusion has an inner circumferential side provided with a thread. A crystal production device includes the crucible and the holder. The holder is attached to the projection portion of the crucible by means of the threads formed in the holder and the crucible. | 09-22-2011 |
| 20110225792 | METHOD FOR MANUFACTURING PLUGGABLE OPTICAL TRANSCEIVER - A pluggable optical transceiver is disclosed. The transceiver comprises a plurality of OSAs, an optical member and a plurality of inner fibers to couple the optical member with OSAs. The inner fibers each provides an inner connector to couple with one of OSAs. The housing, which installs the OSAs, the optical member and the inner fiber, is made of metal and has a grooves into which the inner fibers is set so as to arrange them orderly. | 09-22-2011 |
| 20110223749 | METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×10 | 09-15-2011 |
| 20110223701 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device | 09-15-2011 |
| 20110222828 | MULTI-CORE OPTICAL FIBER - The present invention relates to a multi-core optical fiber having a structure for reducing transmission loss and nonlinearity. The multi-core optical fiber comprises plural cores extending along a center axis direction, and a cladding surrounding the peripheries of the plural cores. The cladding is comprised of silica glass doped with fluorine, and each of the plural cores is comprised of silica glass doped with chlorine or pure silica glass. | 09-15-2011 |
| 20110220294 | METHOD OF PROCESSING TERMINUS OF OPTICAL FIBER AND TERMINUS PROCESSING TOOL - Provides a method and a terminus processing tool whereby terminus processing for the purpose of connection to another optical fiber may be carried out simply. The terminus processing method entails cutting an optical fiber | 09-15-2011 |
| 20110217224 | SILICON CARBIDE CRYSTAL, METHOD OF MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND CRUCIBLE - A method of manufacturing SiC crystal includes the following steps. A manufacturing apparatus including a crucible having a main body portion and a heat insulating material covering the main body portion is prepared. In the main body portion, seed crystal is arranged opposed to a source material. The source material is heated to sublime and a source gas is precipitated on the seed crystal, to thereby grow SiC crystal. The step of preparing the manufacturing apparatus includes the step of arranging a heat radiation portion higher in thermal conductivity than the heat insulating material on a side of an outer surface of the main body portion on a side of seed crystal and covering the entire outer surface of the main body portion on the side of the seed crystal with the heat radiation portion or with the heat radiation portion and the heat insulating material. | 09-08-2011 |
| 20110216190 | FOREIGN MATTER DETECTION DEVICE - A foreign matter inspection apparatus, which enables more sufficient detection of foreign matter included in inspection objects, comprises: (1) a transparent drum having a cylindrical shape turning around a horizontal central axis; (2) an object supplying unit for supplying inspection objects to such a given region on the surface of the drum as will not cause the inspection objects to slide; (3) a first image capturing unit for imaging the inspection objects placed on a first imaging area included in the given region, such imaging being done from outside the drum; (4) a second image capturing unit for imaging the inspection objects placed on a second imaging area included in the given region, such imaging being done from inside the drum; and (5) an analyzing unit for analyzing existence/nonexistence of any foreign matter mingling with the inspection objects, such analysis being done on the basis of images captured by the first image capturing unit and the second image capturing unit. | 09-08-2011 |
| 20110215440 | Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device - Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the { | 09-08-2011 |
| 20110215225 | OPTICAL RECEIVER DEVICE - An optical receiver device including: a light-receiving element having a first electrode acting as an outputting electrode and a second electrode coupled to a potential that is different from a ground potential; an amplifier device having an amplifier element, a connection terminal including a signal electrode and a ground electrode on an upper face thereof; a first conductor coupling a potential of the first electrode of the light-receiving element to the signal electrode, the first conductor being introduced from the upper face side of the amplifier device; and a second conductor coupling a potential of the second electrode of the light-receiving element to the ground electrode, the second conductor introduced from the upper face side of the amplifier device. | 09-08-2011 |
| 20110212560 | METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING EPITAXIAL WAFER - Provided is a method of fabricating a nitride semiconductor light emitting device, and this method can reduce degradation of a well layer during formation of a p-type gallium nitride based semiconductor region and a barrier layer. After growth of a gallium nitride based semiconductor region | 09-01-2011 |
| 20110212556 | PROCESS TO FORM A MOLD OF NANOIMPRINT TECHNIQUE FOR MAKING DIFFRACTION GRATING FOR DFB-LD - A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resist pattern by developing the irradiated resist, (d) coating the SOG film on the patterned resist, (e) attaching the silica substrate on the cured SOG film, and (f) removing the dummy substrate with the resist from the SOG film and the silica substrate. Using the mold thus formed, the diffraction grating for the DFB-LD is formed by the nanoimprint technique. | 09-01-2011 |
| 20110211789 | PHASE PLATE AND PHASE PLATE MANUFACTURING METHOD - The invention relates to a phase plate which is easy to manufacture such as to have a desirable characteristic and the like. The phase plate ( | 09-01-2011 |
| 20110211788 | OPTICAL FIBER AND OPTICAL COMMUNICATION SYSTEM INCLUDING SAME - The invention relates to an optical fiber employable in an optical communication system using Raman amplification and adapted to improve OSNR and suppress bending loss at the same time, and the like. The optical fiber is a silica-based optical fiber having a depressed refractive index profile constituted by at least a core, an inner cladding having a low refractive index, and an outer cladding, an effective area A | 09-01-2011 |
| 20110210378 | HIGH ELECTRON MOBILITY TRANSISTOR, EPITAXIAL WAFER, AND METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR - A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region. | 09-01-2011 |
| 20110210342 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A SiC substrate includes a first orientation flat parallel to the <11-20> direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends. | 09-01-2011 |
| 20110210313 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure | 09-01-2011 |
| 20110208884 | COMMUNICATION APPARATUS, RELAY APPARATUS, COMMUNICATION SYSTEM AND COMMUNICATION METHOD - It is expected to provide a communication apparatus, relay apparatus, communication system and communication method for effectively performing a communication timing adjustment when a collision has occurred on a communication line, efficiently reducing the communication collision with reducing processing loads on each apparatus, for making each apparatus effectively perform the transmission timing adjustment, and for improving the communication efficiency. ECUs are connected to communication lines with a bus topology. A relay apparatus is connected to the communication lines, obtains a time distribution based on a number of messages transmitted to the communication lines. When the bias occurs in the transmission timings, the relay apparatus transmits an instruction message that instructs to perform the timing adjustment for messages transmitted between the ECUs. In addition, it is determined whether a message to be relayed is held. When it is determined that such a message is held, the instruction message is transmitted. | 08-25-2011 |
| 20110206330 | MULTICORE OPTICAL FIBER - The present invention relates to a multicore optical fiber having a structure for effectively inhibiting polarization mode dispersion from increasing, and the multicore optical fiber comprises a plurality of multicore units and a cladding region integrally covering the plurality of multicore units while separating the multicore units from each other. Each of the plurality of multicore units includes a plurality of core regions arranged such as to construct a predetermined core arrangement structure on a cross section orthogonal to an axis. The core arrangement structure of each multicore unit on the cross section has such a rotational symmetry as to coincide with the unrotated core arrangement structure at least three times while rotating by 360° about a center of the multicore unit, thereby reducing the structural asymmetry of each multicore unit. This lowers the structural birefringence in each multicore unit, thereby inhibiting the polarization mode dispersion from increasing in the multicore optical fiber. | 08-25-2011 |
| 20110204381 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 08-25-2011 |
| 20110201184 | OXYGEN DOPING METHOD TO GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE - Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained. | 08-18-2011 |
| 20110201142 | Method of Manufacturing a Light-Emitting Device - To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer. | 08-18-2011 |
| 20110198766 | METHOD AND APPARATUS FOR PRODUCING OPTICAL FIBER - An optical fiber producing method and apparatus are provided in which sufficient pulling tension is applied to an optical fiber to enhance the twisting efficiency without affecting winding tension of a winding bobbin, whereby the PMD of the optical fiber can be reduced. In a method of producing an optical fiber in which, in a path where an optical fiber | 08-18-2011 |
| 20110198693 | III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER - Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminate | 08-18-2011 |
| 20110198566 | METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT - A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N | 08-18-2011 |
| 20110198107 | FLAME RETARDANT, FLAME-RETARDANT COMPOSITION, AND INSULATED WIRE - A flame retardant capable of improving cold resistance and manufacturability of a flame-retardant composition containing itself, and a flame-retardant composition and an insulated wire including the same. A flame retardant is prepared by subjecting an aggregation prepared by aggregating particles mainly consisting of magnesium hydroxide made from magnesium chloride contained in seawater to surface treatment using a surface treatment agent containing an organic polymer. The organic polymer is an olefin resin such as polyethylene and polypropylene. The organic polymer is a resin having a low melt viscosity or a low melting point, and specifically a resin having a melt viscosity of 1000 mPa·s or less at 140° C., or having a melting point of 100° C. or less. The flame-retardant composition contains the flame retardant and a matrix polymer. The insulated wire is prepared by covering a conductor with the composition. | 08-18-2011 |
| 20110198027 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized. | 08-18-2011 |
| 20110194826 | PHOTONIC CRYSTAL FIBER - Provided is a photonic crystal fiber capable of fusion-splicing with an ordinary optical fiber at low splicing loss and having a core region and a cladding region that surrounds the core region, wherein the cladding region is structured such that high refractive index sub-regions are periodically arranged in a two-dimensional periodic structure in the low refractive index background sub-region at a cross-section perpendicular to the fiber axis, and wherein the refractive index of the core region is higher than the refractive index of the low refractive index background sub-region. The refractive index profile of the photonic crystal fiber is uniform along the fiber axis. The effective refractive index of the core guided mode may be higher than the refractive index of the low refractive index background sub-region. | 08-11-2011 |
| 20110193414 | ELECTRIC POWER SUPPLY CONTROL CIRCUIT - An electric power supply control circuit includes a bypass circuit connected in parallel with a semiconductor switch. Upon a control circuit being in an inactive state while a load being in a non-electrifying state or in a standby state, the bypass circuit connects a power source to the load. The bypass circuit includes a electrifying decision circuit that generates an activation signal for activating the control circuit in accordance with the load being put in an operation state. The electrifying decision circuit supplies the activation signal to the control circuit so as to turn on the semiconductor switch and allow electric power supply to the load through an electrifying line. | 08-11-2011 |
| 20110193196 | Indium Phosphide Substrate Manufacturing Method, Epitaxial Wafer Manufacturing Method, Indium Phosphide Substrate, and Epitaxial Wafer - Affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and eptiaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S | 08-11-2011 |
| 20110186862 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×10 | 08-04-2011 |
| 20110186860 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LIGHT EMITTING APPARATUS - Disclosed is a nitride-based semiconductor light emitting device with excellent light extraction efficiency. A light emitting device | 08-04-2011 |
| 20110184660 | ANALYZER OF PHOSPHORYLATION OF PEPTIDE OR PROTEIN, PHOSPHORYLATION DETERMINATION PROGRAM, AND RECORDING MEDIUM FOR THE PROGRAM - To provide an analyzer configured to enable to determine whether or not phosphoric acid is bound to a peptide or protein in a short time according to a simple procedure, and to provide a program for use in the analyzer, and a recording medium for storing the program. | 07-28-2011 |
| 20110182556 | PLASTIC-CLADDING OPTICAL FIBER - A plastic-cladding optical fiber is provided. The plastic-cladding optical fiber is provided includes: a core layer made of quartz glass; and a cladding layer formed by hardening a curable resin composition over a periphery of the core layer. Adhesion between the core layer and the cladding layer ranges 1.5 g/mm to 4.0 g/mm. | 07-28-2011 |
| 20110182311 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME, GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR FABRICATING GALLIUM NITRIDE LIGHT-EMITTING DIODE - Provided is a gallium nitride based semiconductor light-emitting device with a structure capable of enhancing the degree of polarization. A light-emitting diode | 07-28-2011 |
| 20110181363 | ELECTRONIC CIRCUIT - An electronic circuit includes a first transistor having a first terminal grounded, a second transistor having a control terminal coupled with a second terminal of the first transistor, a first terminal grounded via a first capacitor, and a second terminal to which a DC power supply is connected, a first distributed constant line having one end connected to a first node between the second terminal of the first transistor and the control terminal of the second transistor and another end grounded via a second capacitor, a second distributed constant line having one end connected to the second terminal of the first transistor and another end connected to the first node, a third distributed constant line having one end connected to the control terminal of the second transistor and another end connected to the first node, a resistor connected between a second node between the first line and the second capacitor and a third node between the first terminal of the second transistor and the first capacitor, and a path that connects the third node and the second terminal of the first transistor via the first line and the resistor in a DC circuit operation. | 07-28-2011 |
| 20110180814 | INSULATED GATE FIELD EFFECT TRANSISTOR - A MOSFET, which is capable of reducing on resistance by reducing channel mobility even when a gate voltage is high, includes: an n type substrate made of SiC and having a main surface with an off angle of 50°-65° relative to a {0001} plane; an n type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; a p type well region formed in the reverse breakdown voltage holding layer distant away from a first main surface thereof; a gate oxide film formed on the well region; an n type contact region disposed between the well region and the gate oxide film; a channel region connecting the n type contact region and the reverse breakdown voltage holding layer; and a gate electrode disposed on the gate oxide film. In a region including an interface between the channel region and the gate oxide film, a high-concentration nitrogen region is formed. | 07-28-2011 |
| 20110180813 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is capable of reducing on resistance by reducing channel mobility, includes: an n type substrate made of SiC and having a main surface with an off angle of not less than 50° and not more than 65° relative to a plane orientation of {0001}; a p type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; an n type well region formed to include a second main surface of the reverse breakdown voltage holding layer; an emitter region formed in the well region to include the second main surface and including a p type impurity at a concentration higher than that of the reverse breakdown voltage holding layer; a gate oxide film formed on the reverse breakdown voltage holding layer; and a gate electrode formed on the gate oxide film. In a region including an interface between the well region and the gate oxide film, a high-concentration nitrogen region is formed to have a nitrogen concentration higher than those of the well region and the gate oxide film. | 07-28-2011 |
| 20110180812 | SEMICONDUCTOR DEVICE - A MOSFET which is a semiconductor device capable of achieving a stable reverse breakdown voltage and reduced on-resistance includes a SiC wafer of an n conductivity type, a plurality of p bodies of a p conductivity type formed to include a first main surface of the SiC wafer, and n | 07-28-2011 |
| 20110180805 | GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE - A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA | 07-28-2011 |
| 20110177407 | ELECTROCHEMICAL REACTOR, METHOD FOR MANUFACTURING THE ELECTROCHEMICAL REACTOR, GAS DECOMPOSING ELEMENT, AMMONIA DECOMPOSING ELEMENT, AND POWER GENERATOR - [Object] To provide an electrochemical reactor that is small in size but high in throughput capacity, does not generate NOx or carbon dioxide, can be operated at a low running cost, is easy to handle during assembling, and has a simple structure and high durability, a method for manufacturing the reactor, a gas decomposing element, an ammonia decomposing element, and a power generator. | 07-21-2011 |
| 20110176958 | SINTERED COMPACT, PROCESS FOR PRODUCTION THEREOF, AND OPTICAL ELEMENT - There is provided a sintered body that does not readily deform during use and that allows a high flexibility for the design of surface layers, a method for manufacturing the sintered body, and an optical component including the sintered body. The method for manufacturing a sintered body includes a sintered body having a predetermined shape, the sintered body having a ceramic base material, the method for manufacturing a sintered body comprising a step for preparing a ceramic preform, a step for using a predetermined mold having an upper die and a lower die to hot-press the ceramic preform to form a pressure-sintered body, and a step for cooling the pressure-sintered body while applying a pressure load of approximately 5% or more and 100% or less (and preferably approximately 20% or more and 40% or less) of the pressure load applied during the step for forming the pressure-sintered body. | 07-21-2011 |
| 20110176569 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure | 07-21-2011 |
| 20110176203 | LASER APPARATUS - The present invention relates to a laser apparatus capable of supplying laser beams from each of plural beam emitting ends constituting laser beam output ports, and realizes the overall low power consumption and low non-linearization. The laser apparatus comprises a seed light source, beam emitting ends, an intermediate optical amplifier, an optical branching device, and final-stage optical amplifiers. The number of beam emitting ends is greater than the number of seed light sources, and the final-stage optical amplifiers and the beam emitting ends correspond to each other one-on-one. The optical branching device includes an input port associated to the seed light source and plural output ports associated to the respective beam emitting ends so as to constitute a part of the light paths between the seed light source and the beam emitting ends. The intermediate optical amplifier is disposed on the light path between the seed light source and the optical branching device, while the final-stage optical amplifiers are respectively disposed on the branch lines between the beam emitting ends and the optical branching device. | 07-21-2011 |
