| SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120133013 | SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light receiving element includes a first semiconductor layer having a first conduction type, a second semiconductor layer that is provided on the first semiconductor layer and has a light receiving area, the second semiconductor layer having a second conduction type opposite to the first conduction type, an insulation film provided on the second semiconductor layer, and an electrode provided on the insulation film, the insulation film having a plurality of windows in an area in which the electrode overlaps the plurality of windows, the electrode being electrically connected to the second semiconductor layer via the plurality of windows. | 05-31-2012 |
| 20120087136 | OPTICAL DEVICE - An optical device includes: a chassis that receives an optical element; a first terminal that is extended from a bottom face of the chassis and is electrically connected to the optical element; a second terminal that is extended from a side face of the chassis and is electrically connected to the optical element; a projection portion that is provided on the bottom face of the chassis and a top face of the projection portion is higher than a distal end of the first terminal. | 04-12-2012 |
| 20120075004 | SWITCH AND METHOD OF CONTROL THE SAME - A switch includes, a common terminal, a first terminal, a second terminal, a first FET having a first source, a first drain and a first gate, one of the first source and the first drain being coupled to the common terminal, the other of the first source and the first drain being coupled to the first terminal, and a second FET having a second source, a second drain and a second gate, one of the second source and the second drain being coupled to the common terminal, the other of the second source and the second drain being coupled to the second terminal. The first FET is controlled to a turn-off state by an absolute voltage of the first gate which is smaller than an absolute voltage of the second gate to control a turning-off state for the second transistor. | 03-29-2012 |
| 20120075003 | ELECTRONIC CIRCUIT - An electronic circuit includes: first through third transistors having a control terminal, first and second terminals; a first direct current path supplying a direct current having passed through between the first terminal and the second terminal of at least one of the second transistor and the third transistor to the second terminal of the transistor at former position compared to the transistor through which the direct current passed; a second direct current path that is different from the first direct current path and supplies a direct current having passed through between the first terminal and the second terminal of at least one of the second transistor and the third transistor to the second terminal of the transistor at former position compared to the transistor through which the direct current passed; and a common coupling point coupling the first direct current path and the second direct current path in common. | 03-29-2012 |
| 20120028475 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm | 02-02-2012 |
| 20120028465 | PROCESS TO FORM VIA HOLE IN SEMICONDUCTOR WAFER - A process to form a via hole in a semiconductor wafer is disclosed. The process includes steps of, preparing a metal mask and etching the wafer by the metal mask as the etching mask. The preparation of the metal mask includes steps of: coating a nega-resist on the back surface of the wafer, carrying out the photolithography for the coated nega-resist, plating a metal selectively by the patterned photoresist, and removing the patterned photoresist. | 02-02-2012 |
| 20120028423 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a channel layer; forming an electron supply layer on the channel layer; forming a cap layer made of gallium nitride on the electron supply layer; and performing an oxygen plasma treatment to an upper surface of the cap layer at a power density of | 02-02-2012 |
| 20120027036 | OPTICAL DEVICE AND METHOD FOR FABRICATING OPTICAL DEVICE - An optical device including: a carrier having a first area and a second area, both edges of the second area having a wall of a step, one edge of the second area being adjacent to the first area, the first area having a first thickness, the second area having a second thickness larger than the first thickness; and a first optical component mounted on the first area of the carrier, the second area of the carrier being an absence area of a component. | 02-02-2012 |
| 20120025916 | DOHERTY AMPLIFIER - An amplifier includes a Doherty amplifier composed of a distributor distributing an input signal to two signals, a carrier amplifier that receives one of the two signals and has a first FET, a peaking amplifier that receives the other one of the two signals and has a second FET, and a combiner that transforms an output impedance of the carrier amplifier and combines outputs of the carrier amplifier and the peaking amplifier, and a voltage controller that changes at least one of a gate voltage and a drain voltage supplied to at least one of the first FET and the second FET in accordance with a frequency of the input signal when the frequency of the input signal varies. | 02-02-2012 |
| 20120025915 | DOHERTY AMPLIFIER - A Doherty amplifier includes: an input distributor; a coupler; a plurality of Doherty circuit connected between the input distributor and the coupler; wherein each of Doherty circuits has a carrier amplifier, a peaking amplifier, a distributor distributing a input signal to the carrier amplifier and the peaking amplifier, and a combiner that transforms an output impedance of the carrier amplifier and combines outputs of the carrier amplifier and the peaking amplifier. | 02-02-2012 |
| 20120025207 | PROCESS FOR DIVIDING WAFER INTO INDIVIDUAL CHIPS AND SEMICONDUCTOR CHIPS - A process to divide a wafer into individual chips is disclosed. The process (1) etches semiconductor layers for an active device to form two grooves putting the virtual cut line therebetween, where the semiconductor wafer is to be divided along the virtual cut line; (2) etches the substrate in a region including the virtual cut line but offset from the groove from the back surface thereof so as to expose the semiconductor layers in the primary surface; and (3) etches the semiconductor layer exposed in step (2). | 02-02-2012 |
| 20120021598 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device having a GaN-based semiconductor layer on a first surface of a substrate made of SiC, a pad being provided on the GaN-based layer, includes: forming a first via hole in the substrate by etching, with fluorine based gas, from a second surface of the substrate opposite to the first surface, the etching being carried out with the GaN-based layer being used as an etch stopper; and forming a second via hole in the GaN-based semiconductor layer, with chlorine based gas, from a bottom surface of the first via hole, the etching being carried out with the pad being used as an etching stopper, the chlorine based gas being an etchant different from the fluorine based gas. | 01-26-2012 |
| 20120021597 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: forming a silicon layer on an upper face of a nitride semiconductor layer including a channel layer of a FET; thermally treating the nitride semiconductor layer in the process of forming the silicon layer or after the process of forming the silicon layer; and forming an insulating layer on an upper face of the silicon layer after the process of forming the silicon layer. | 01-26-2012 |
| 20120021582 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: forming a lower electrode layer in contact with a surface of a nitride semiconductor layer; forming an Al layer on the lower electrode layer; performing a heat treatment after the formation of the Al layer; removing the Al layer after the heat treatment is performed; and forming an upper electrode layer on the lower electrode layer after the removal of the Al layer. | 01-26-2012 |
| 20120019326 | DOHERTY AMPLIFIER AND SEMICONDUCTOR DEVICE - A Doherty amplifier includes a carrier amplifier including a first FET, the first FET having a plurality of gate electrodes, and a peaking amplifier including a second FET, the second FET having a plurality of gate electrodes, a gate-to-gate interval of the gate electrodes of the second FET being shorter than a gate-to-gate interval of the first FET. | 01-26-2012 |
| 20120018742 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a SiC substrate, a semiconductor layer formed on the SiC substrate, a via hole penetrating through the SiC substrate and the semiconductor layer, a Cu pad that is formed on the semiconductor layer and is in contact with the via hole, and a barrier layer covering an upper face and side faces of the Cu pad, and restrains Cu diffusion. | 01-26-2012 |
| 20120018735 | SEMICONDUCTOR DEVICE - A semiconductor device includes a source electrode and a drain electrode formed on an active region of the semiconductor layer, a gate electrode formed on the active region of the semiconductor layer, a first insulating film formed on the semiconductor layer and covering the gate electrode, the first insulating film having a step portion following a shape of the gate electrode, a first field plate formed on the insulating film and located between the gate electrode and the drain electrode and separated from the step portion, a second insulating film formed on the first insulating film to cover the step portion and the first field plate, and a shield electrode formed on the second insulating film, the shield electrode extending from a portion located above the first field plate and a portion located above the gate electrode. | 01-26-2012 |
| 20120015513 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a recess to an AlGaN layer by etching, the AlGaN layer having an Al composition ratio of 0.2 or greater, the recess having a bottom having an RMS roughness less than 0.3 nm, forming a first Ta layer having a thickness of 4 nm to 8 nm on the bottom of the recess, and annealing the first Ta layer to make an ohmic contact in the AlGaN layer. | 01-19-2012 |
| 20120008962 | CONTROLLER FOR OPTICAL TRANSCEIVER AND A METHOD TO CONTROL THE SAME - A method is disclosed, where the access time to the extended memory space may be shortened in an optical transceiver coupled with a host device through I | 01-12-2012 |
| 20110292960 | WAVELENGTH TUNABLE SEMICONDUCTOR LASER - A wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more; a second facet; a wavelength selection portion between the first facet and the second facet; and an optical absorption region between the first facet and the wavelength selection portion. Another wavelength tunable semiconductor laser includes: a first facet having reflectivity of 10% or more to inside of the semiconductor laser; a second facet for output; a wavelength selection portion having diffraction gratings and positioned between the first and the second facet; an optical absorption region located between the first facet and the wavelength selection portion. | 12-01-2011 |
| 20110292381 | METHOD FOR MEASURING OPTICAL INPUT POWER BY AVALANCHE PHOTODIODE - A method to monitor an output of an APD is disclosed. The method includes steps of, (a) measuring dark currents of the APD at several temperatures in advance to a practical operation of the APD, (b) measuring an output current of the APD by illuminating the APD practically at a measured temperature, (c) estimating a dark current at the measured temperature from measured dark currents, and (d) subtracting the estimated dark current from the output current. | 12-01-2011 |
| 20110291221 | SEMICONDUCTOR LIGHT RECEIVING DEVICE - A semiconductor light receiving device includes: a substrate having a rectangular shape with first through fourth corners, a multilayer structure formed on the substrate, a light receiving part having a mesa structure positioned at a first corner side from a center part of the rectangular shape of the substrate, a first electrode pad provided on the semiconductor substrate, and a second electrode pad provided on the semiconductor substrate so as to be close to a second corner diagonally opposite to the first corner, a first minimum distance between the second electrode pad and an edge of the substrate being longer than a second minimum distance between the first electrode pad and the edge of the substrate. | 12-01-2011 |
| 20110278047 | FLEXIBLE PRINTED CIRCUIT BOARD - A flexible printed circuit board includes: a substrate having a first edge and a second edge; a first wiring pattern disposed on the substrate and having a lead connection portion at a side of the first edge of the substrate; a second wiring pattern disposed on the substrate and having a lead connection portion at a side of the first edge of the substrate; a first solder pattern disposed on the lead connection portion of the first wiring pattern; and a second solder pattern disposed on the lead connection portion of the second wiring pattern and having a length longer than the first solder pattern. | 11-17-2011 |
| 20110261855 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer. | 10-27-2011 |
| 20110261848 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×10 | 10-27-2011 |
| 20110252860 | METHOD FOR CONTROLLING TESTING APPARATUS - A method for controlling testing apparatus having a plurality of device stations for test, a plurality of measuring portions measuring an identical item, and a matrix switch changing a coupling combination between the plurality of the device stations for test and the plurality of the measuring portions, including: performing checking step of a measuring portion with respect to the plurality of the measuring portions, the checking step measuring the measuring portion by measuring a standard device; and performing checking step of a device station for test with respect to the plurality of the device stations for test, the checking step mounting a standard sample on the device station for test and checking the standard sample with use of the measuring portion coupled to the device station for test on which the standard sample is mounted. | 10-20-2011 |
| 20110228800 | METHOD FOR TUNING SEMICONDUCTOR LASER - A method for tuning a semiconductor laser including a plurality of wavelength selection portions, each of which has a periodic wavelength characteristic, including: controlling a value of a refractive index controlling means of the wavelength selection portions to achieve a desired output wavelength of the laser; and shifting the value when the value is equal to or excess of a predetermined value to a basal value side until achieving the desired output wavelength, the basal value being a value without applying refractive index variation by the refractive index controlling means, the predetermined value being a value for shifting one period of the periodic wavelength characteristic. | 09-22-2011 |
| 20110222822 | OPTICAL TRANSCEIVER HAVING INNER METAL COVER - An optical transceiver that provides an inner metal cover in addition to a metal cover and a frame is disclosed. The inner cover includes a ceiling, a front skirt bent downward at a front edge of the ceiling, sides bent downward at both side edges of the ceiling, and a pair of arms extending rearward from respective side ends of the ceiling. The ceiling makes an obtuse angle with respect to the front skirt when the arms are not assembled with the frame, and shapes in convex protruding outward when the metal cover is not assembled with frame and. Assembling the inner cover and the metal cover with the frame, the inner cover comes in securely contact with the metal cover. | 09-15-2011 |
| 20110204381 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. | 08-25-2011 |
| 20110200062 | METHOD OF CONTROLLING WAVELENGTH-TUNABLE LASER - A method of controlling a wavelength-tunable laser selecting an oscillation wavelength with a combination of a plurality of wavelength selection portions of which wavelength peak is different from each other, comprising: a first step of confirming a control direction of the wavelength selection portion in a case where a setting value is changed from a first setting value for achieving the first wavelength to a second setting value for achieving the second wavelength; a second step of setting a setting value that is shifted from the second setting value in a direction that is opposite of a pre-determined changing direction on the wavelength selection portion as a prepared setting value, when the control direction confirmed in the first step is opposite to the pre-determined changing direction; and a third step of changing the prepared setting value set in the second step to the second setting value. | 08-18-2011 |
| 20110193095 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, a gate insulating film that is formed on a surface of the GaN-based semiconductor layer and is made of aluminum oxide, and a gate electrode formed on the gate insulating film, the gate insulating film having a carbon concentration of 2×10 | 08-11-2011 |
| 20110164885 | METHOD TO CONTROL TEMPERATURE OF LD - New method to control the optical transmitter is disclosed. The optical transmitter provides both of the ATC feedback loop and the APC feedback loop. When a failure occurs in the ATC feedback loop and the temperature sensor is unable to output an adequate signal any longer, the optical transmitter cuts the APC loop and operates the LD in constant conditions. The output of the monitor PD is transferred to the ATC loop to control the TEC based on the optical output of the LD. | 07-07-2011 |
| 20110164634 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes: a semiconductor laser; a carrier that has a carrier side face facing with a longitudinal direction of the semiconductor laser, has a carrier edge area, and has a first bonding area that is the closest to a first end of the semiconductor laser and a second bonding area that is the closet to a second end of the semiconductor laser; a first thermal conduction portion that has a first thermal resistance and couples between the first bonding area and an outer connection terminal; and a second thermal conduction portion that has a second thermal resistance smaller than the first thermal resistance and couples between the second bonding area and an outer connection terminal, wherein the first end side of the semiconductor laser is closer to the carrier side face than the second end side of the semiconductor laser. | 07-07-2011 |
| 20110135258 | OPTICAL TRANSCEIVER WITH A SHIELD MEMBER BETWEEN TWO OSAS - An optical transceiver provides a TOSA, a ROSA, a base member, a circuit board and a shield member. The shield member is formed by cutting and bending a metal sheet without welding or soldering. The shield member includes a center partition and a pair of sides, which forms two spaces each receiving the TOSA or the ROSA. The center partition has a V-shaped cross section which is able to be inserted into a cut of the circuit board so as to shield the ROSA from the TOSA. The shield member provides a frame ground by being in the bottom of the center partition in contact with the base member and also in contact with the cover. | 06-09-2011 |
| 20110089515 | SEMICONDUCTOR LIGHT RECEIVING DEVICE - A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on the semiconductor substrate and has an upper electrode coupled electrically to a lower electrode of the first semiconductor light receiving element with a wiring provided on the semiconductor substrate; and a second mesa that is provided on the semiconductor substrate and has an upper electrode that has a same electrical potential as the upper electrode of the first semiconductor light receiving element when coupled to the electrode wiring on the mounting carrier. | 04-21-2011 |
| 20110084341 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a rectangular shape, and a via hole that has an elliptic shape or a track shape having a linear portion in a long-axis direction of the track shape, a long axis of the elliptic shape or the track shape being arranged in a long-side direction of the substrate. | 04-14-2011 |
| 20110081784 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming step of forming an etching mask on a second main face of a substrate, the etching mask being made of Cu or Cu alloy and having an opening, the second main face being on an opposite side of a first main face of the substrate where a nitride semiconductor layer is provided; a first etching step of applying a dry etching to the second main face of the substrate with use of the etching mask so that all of or a part of the nitride semiconductor layer is left; a removing step of removing the etching mask after the first etching step; and a second etching step of dry-etching the left nitride semiconductor layer after the removing step. | 04-07-2011 |
| 20110044591 | OPTICAL TRANSCEIVER WITH OPTICAL RECEPTACLE SEPARATED FROM FRAME AND PROCESS TO ASSEMBLE THE SAME - An optical transceiver with an optical receptacle separated from the frame is disclosed. The optical transceiver comprises an optical sub-assembly, an optical receptacle and a frame. The optical receptacle, which is set between the side walls of the frame, and assembled therewith by fastening a screw between the optical receptacle and the side wall of the frame. Inserting the screw into the screw hole, the optical receptacle is forced to move rearward which securely fixes the optical subassembly assembled with the optical receptacle between the optical receptacle and the saddle provided in the frame. | 02-24-2011 |
| 20100317164 | SEMICONDUCTOR DEVICE FABRICATION METHOD - The present invention is a method for fabricating a semiconductor device including the steps of: a first silicon nitride film having a refractive index of 2.2 or higher on a semiconductor layer made of a GaN- or InP-based semiconductor; forming, on the first silicon nitride film, a second silicon nitride film having a refractive index lower than that of the first silicon nitride; forming a source electrode and a drain electrode in areas in which the semiconductor layer is exposed; annealing the source electrode and the drain electrode in a state in which the first silicon nitride film and the second silicon nitride film are formed; and forming a gate electrode on the semiconductor layer between the source electrode and the drain electrode. | 12-16-2010 |
| 20100297796 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device including growing an InAlGaAsP layer having a thickness of 1.0 μm or more on a surface of an InP semiconductor layer at a growth temperature of 680 degrees C. or more, a composition ratio “X” of Ga in InAlGa of the InAlGaAsP being 0≦X≦0.08. | 11-25-2010 |
| 20100296532 | LASER DEVICE AND LASER DEVICE CONTROL DATA - A laser device includes a resonator having a gain region, a first wavelength selection portion having a periodical peak in wavelength characteristics and a second wavelength selection portion having a periodical peak in wavelength characteristics in a wavelength range smaller than a variable range of an oscillation wavelength at a period different from the first wavelength selection portion, the oscillation wavelength selected with a single direction changing of a refractive index of the second wavelength selection portion changing in a single direction; a storing portion storing a setting value of a refractive index of the second wavelength selection portion for selecting an oscillation wavelength according to an oscillation wavelength to be attained within an extent from a maximum value to a minimum value of the refractive index over the plurality of the ranges; and a controller giving the setting value to the resonator. | 11-25-2010 |
| 20100248459 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including: cleaning an apparatus used to grow a layer including Ga; performing a first step of forming a first layer on a substrate made of silicon by using the apparatus, the first layer including a nitride semiconductor that does not include Ga as a composition element and has a Ga impurity concentration of 2×10 | 09-30-2010 |
| 20100247033 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device in which light having a wavelength of 1.25 μm or greater is waveguided, includes: a first waveguide of embedded type that includes a semiconductor and is lattice-matched with InP, the first waveguide having a region having a first constant width equal to or greater than 1.50 μm and a first region narrower than the region; and a second waveguide of embedded type that includes another semiconductor having a refractive index different from that of the first waveguide, the second waveguide having a region having a second constant width smaller than 1.50 μm and a second region wider than said region. The first waveguide and the second waveguide are joined at an intermediate waveguide portion. The intermediate waveguide portion includes the first region and the second region and a joining plane on which the first region and the second region are joined. The joining plane has a width equal to or smaller than 1.35 μm. | 09-30-2010 |
| 20100247031 | OPTICAL WAVEGUIDE DEVICE, ITS MANUFACTURE METHOD, LASER MODULE AND OPTICAL TRANSMISSION SYSTEM - A first optical waveguide of a convex shape is formed over a substrate. A second optical waveguide of a convex shape is formed over the substrate. A multimode interference waveguide of a convex shape is formed over the substrate for optically coupling the first optical waveguide to the second optical waveguide. Either side of the first optical waveguide is filled with a filling material, but either side of the second optical waveguide is not filled with the filling material. | 09-30-2010 |
| 20100246629 | MULTIPLE-WAVELENGTH LASER DEVICE - A multiple-wavelength laser device includes a first semiconductor laser chip having two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; a second semiconductor laser chip having two or less than two modulable unit laser portions, outputs of the unit laser portions being optically coupled to a single output optical axis; an optical coupler that combines the output optical axes of the first and the second semiconductor laser chips; and a plurality of drive current pathways or a plurality of signal transmission pathways that are coupled to each of the unit laser portions of the first and the second semiconductor laser chips with a connection conductor. | 09-30-2010 |
| 20100246627 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: a beam splitter that splits an input optical axis into a first split axis having a first split angle and a second split axis having a second split angle larger than the first split angle; a first unit that is located on the first split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the first unit and the beam splitter having a first length; a second unit that is located on the second split axis of the beam splitter and has one or more optical components, an interval between a more distant end of the second unit and the beam splitter having a second length larger than the first length; and an optical semiconductor element that has a first outputting end having a first output axis coupled optically to the input optical axis of the beam splitter, a second outputting end having a second output axis, and optical gain, the optical semiconductor element being inclined so that the second output axis is arranged away to a side of the second split axis from the first output axis. | 09-30-2010 |
| 20100246620 | LASER DEVICE - A laser device includes: an optical modulator that is optically coupled to a semiconductor laser mounted on a first mounting portion; a second mounting portion that is separately away from the first mounting portion; a bridge that couples the first mounting portion and the second mounting portion; a driver IC that is mounted on the second mounting portion and drives the optical modulator through a transmission pathway provided on the bridge; and a capacitor that is provided on the bridge and is coupled to the transmission pathway. | 09-30-2010 |
| 20100244098 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of AlN or Al | 09-30-2010 |
| 20100243989 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a superlattice buffer layer that is formed on the substrate and is composed of first Al | 09-30-2010 |
| 20100240198 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side, the nitrogen-source flow ratio being a ratio of a flow rate of a nitrogen source to a total flow rate of growth gas; and growing a GaN-based semiconductor layer on the AlN layer by MOVPE. | 09-23-2010 |
| 20100238426 | TESTING METHOD OF SEMICONDUCTOR LASER AND LASER TESTING DEVICE - A testing method of a semiconductor laser emitting a wavelength under a test different from a reference wavelength in a given wavelength range includes: a first step of obtaining a length of an optical fiber under the test satisfying a reference dispersion condition at the wavelength under the test, based on the reference dispersion condition for the test and a unit dispersion amount of the optical fiber; and a second step of inputting a modulation signal that is a modulated laser light of the semiconductor laser having a wavelength as the wavelength under the test into an optical fiber having substantially the same length as the length obtained in the first step and evaluating an output of the optical fiber. | 09-23-2010 |
| 20100237928 | SWITCHING CIRCUIT AND METHOD FOR TESTING THE SAME - There is provided a method for testing a switching circuit including a first FET connected between input/output terminals, a capacitor connected between one of the input/output terminals and the first FET, and a second FET that is connected in parallel with the capacitor and has a gate electrode connected to a ground terminal. The method includes, applying a potential that sets the second FET to a conducting state to the ground terminal, and testing a DC test for the first FET via the second FET. | 09-23-2010 |
| 20100231295 | ELECTRONIC CIRCUIT - An electronic circuit includes a transimpedance amplifier, a bypass circuit that allows a part of an input signal to be applied to the transimpedance amplifier to flow through the bypass circuit so as to bypass the transimpedance amplifier on the basis of a control signal, and a control signal circuit that includes a hold circuit having a time constant that is variable on the basis of a time constant control signal and generates the control signal. | 09-16-2010 |
| 20100193894 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip, and a guard ring made of an electrically conductive material and arranged between electrodes on the semiconductor chip and side edges of the semiconductor chip, the guard ring being divided by isolating sections on the semiconductor chip. | 08-05-2010 |
| 20100164112 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer, an electrode pad that is composed of Au and is provided on the semiconductor layer, a silicon nitride film provided on the semiconductor layer and the electrode pad so that an end portion of the silicon nitride film is located, and a metal layer that contacts a part of a surface of the electrode pad and the end portion of the silicon nitride film and is provided so that another part of the surface of the electrode pad is exposed, the metal layer including any of Ti, Ta and Pt. | 07-01-2010 |
| 20100164103 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer composed of one of GaAs based semiconductor, InP-based semiconductor, and GaN-based semiconductor; a first silicon nitride film that is provided on the semiconductor layer, and of which an end portion is in contact with a surface of the semiconductor layer; a protective film that is composed of one of polyimide and benzocyclobutene, and is provided on the semiconductor layer and the first silicon nitride film, the protective film covering the end portion of the first silicon nitride film; and a first metallic layer that is composed of one of titanium, tantalum and platinum, and is continuously provided from a first portion located between the semiconductor layer and the protective film to a second portion located between the end portion of the first silicon nitride film and the protective film, the first metallic layer being in contact with the surface of the semiconductor layer and a surface of the end portion of the first silicon nitride film. | 07-01-2010 |
| 20100159656 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a GaN-based semiconductor layer on a substrate; forming a gate insulating film of aluminum oxide on the GaN-based semiconductor layer at a temperature equal to or lower than 450° C.; forming a protection film on an upper surface of the gate insulating film; performing a process with an alkaline solution in a state in which the upper surface of the gate insulating film is covered with the protection film; and forming a gate electrode on the gate insulating film. | 06-24-2010 |
| 20100118906 | SEMICONDUCTOR LASER - A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substantially zero strain against the GaAs, the well layers and the barrier layer being alternately stacked; a pair of first AlGaInP layers that has substantially zero strain against the GaAs, and is provided so that the first AlGaInP layers contact upper and lower surfaces of the multiple quantum well active layer respectively; and a pair of second AlGaInP layers that has a compressive strain against the GaAs, and is provided so that the second AlGaInP layers contact the pair of first AlGaInP layers respectively. | 05-13-2010 |
| 20090310979 | ELECTRONIC CIRCUIT AND COMMUNICATION SYSTEM - An electronic circuit includes: a differential amplifier circuit into which a digital input signal and a reference signal are fed; a feedback circuit outputting an average of amplitude of the input signal; and a peak holding circuit outputting a signal held based on an output signal of the feedback circuit as the reference signal. | 12-17-2009 |
