SUMCO TECHXIV CORPORATION Patent applications |
Patent application number | Title | Published |
20160102418 | METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON WAFER - A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 mΩ·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm | 04-14-2016 |
20150380493 | MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER, AND EPITAXIAL SILICON WAFER - An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 mΩ·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter. | 12-31-2015 |
20150162181 | SEMICONDUCTOR WAFER MANUFACTURING METHOD - A method of manufacturing a semiconductor wafer includes: rough-polishing front and back surfaces of the semiconductor wafer; mirror-polishing a chamfered portion of the rough-polished semiconductor wafer; performing mirror finish polishing on the front surface or both the front and back surfaces of the semiconductor wafer having the mirror-polished chamfered portion; and forming an oxide film on an entire surface of the semiconductor wafer after the mirror-polishing of the chamfered portion and before the mirror finish polishing. | 06-11-2015 |
20150107509 | SILICON SINGLE CRYSTAL PULLING APPARATUS AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL - Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt. | 04-23-2015 |
20140295126 | METHOD FOR SLICING SEMICONDUCTOR SINGLE CRYSTAL INGOT - An amount of warp of a wafer is not only reduced, but the amount of warp of the wafer is also accurately controlled to a desired amount. The present invention relates to a method for slicing a semiconductor single crystal ingot, by which a cylindrical semiconductor single crystal ingot is bonded to and held by a holder in a state where the ingot is rotated at a predetermined rotation angle around a crystal axis of the ingot different from a center axis of a cylinder of this ingot and the ingot is sliced by a cutting apparatus in this state. The predetermined rotation angle at the time of bonding and holding the ingot with the use of the holder in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount. | 10-02-2014 |
20140033967 | METHOD FOR MANUFACTURING SINGLE CRYSTAL - In consideration of influence of segregation, an evaporation area of a volatile dopant and influence of pulling-up speed at the time of manufacturing a monocrystal using a monocrystal pulling-up device, an evaporation speed formula for calculating evaporation speed of the dopant is derived. At predetermined timing during pulling-up, gas flow volume and inner pressure in a chamber are controlled such that a cumulative evaporation amount of the dopant, calculated based on the evaporation speed formula, becomes a predetermined amount. A difference between a resistivity profile of the monocrystal predicted based on the evaporation speed formula and an actual resistivity profile is made small. Since no volatile dopant is subsequently added, increase in workload on an operator, increase of manufacturing time, an increase in amorphous adhering to the inside of the chamber, and an increase in workload at the time of cleaning the inside of the chamber can be prevented. | 02-06-2014 |
20140020617 | PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED N-TYPE SEMICONDUCTOR SUBSTRATE - After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P] | 01-23-2014 |
20120305187 | ETCHING METHOD AND ETCHING APPARATUS OF SEMICONDUCTOR WAFER - A method and an apparatus of etching a semiconductor wafer are provided. The etching apparatus of a semiconductor wafer having a marker inside includes: a monitoring device capable of monitoring a surface of the semiconductor wafer so as to detect the marker; a nozzle capable of jetting a mixed gas that contains hydrogen fluoride and ozone onto the surface of the semiconductor wafer; a regulator capable of adjusting at least one of hydrogen fluoride concentration and ozone concentration in the mixed gas; and a controller capable of determining whether the marker is detected by the monitoring device and terminating the etching process. | 12-06-2012 |
20110143526 | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER - A method of manufacturing a silicon wafer, an oxygen concentration in a surface layer to be maintained more than a predetermined value while promoting a defect-free layer. Strength of the surface layer can be made higher than that of an ordinary annealed sample as a COP free zone is secured. A method of manufacturing a silicon wafer doped with nitrogen and oxygen, includes growing a single crystal silicon doped with the nitrogen by Czochralski method, slicing the grown single crystal silicon to obtain a single crystal silicon wafer; heat treating the sliced single crystal silicon wafer in an ambient gas including a hydrogen gas and/or an inert gas; polishing the heat treated single crystal silicon wafer, after the heat treatment, such that an obtained surface layer from which COP defects have been removed by the heat treatment is polished away until an outermost surface has a predetermined oxygen concentration. | 06-16-2011 |
20110140241 | PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAXIAL WAFER , AND SILICON INGOT - A process for production of a silicon ingot, by which a silicon ingot exhibiting a low resistivity even in the top portion can be produced. The process for the production of a silicon ingot comprises includes withdrawing a silicon seed crystal ( | 06-16-2011 |
20110132257 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS - A silicon single crystal pull-up apparatus is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace, a sample chamber which is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding means for thermally isolating the interior of the pull-up furnace and the interior of the sample chamber, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, and a raising and lowering means which is provided with guide rails on which the sample tube can slide and a wire mechanism by which the sample tube is raised and lowered along the guide rails. | 06-09-2011 |
20110120367 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS - A silicon single crystal pull-up apparatus includes a pull-up furnace, a sample chamber in which a sublimable dopant is housed, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, a raising and lowering means for raising and lowering the sample tube, a supply pipe which is installed inside the pull-up furnace and supplies the sublimable dopant to a melt, and a connection means for connecting the sample tube and the supply pipe. The connection means is constructed from a ball joint structure comprising a convex member which projects from one end of the sample tube and a concave member which is provided at one end of the supply pipe and is formed to be engageable with the convex member. The contact surfaces of the convex member and the concave member are formed to be curved surfaces. | 05-26-2011 |
20110017948 | SILICON SINGLE CRYSTAL PULLING APPARATUS AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL - Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt. | 01-27-2011 |
20100294999 | PRODUCING METHOD AND APPARATUS OF SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL INGOT - The sublimation speed of dopant can be precisely controlled without being influenced by a change over time of intra-furnace thermal environment. A dopant supply unit equipped with an accommodation chamber and a supply tube is provided. A sublimable dopant is accommodated. Upon sublimation of the dopant within the accommodation chamber, the sublimed dopant is introduced into a melt. The dopant within the accommodation chamber of the dopant supply unit is heated. The amount of heating by means of heating means is controlled so as to sublime the dopant at a desired sublimation speed. The dopant is supplied to the melt so that the dopant concentration until the first half of a straight body portion of the silicon single crystal is in the state of low concentration or non-addition. After the first half of the straight body portion of the silicon single crystal is formed, the dopant is supplied to the melt so that every portion of the crystal is in the state where the dopant is added to a desired high concentration. | 11-25-2010 |
20100285665 | SEMICONDUCTOR WAFER MANUFACTURING METHOD - In a method of manufacturing semiconductor wafers, front and hack surfaces of the semiconductor wafers are simultaneously polished with a double-side polishing machine that includes: a carrier for accommodating the semiconductor wafer; and an upper press platen and a lower press platen for sandwiching the carrier. The method includes: accommodating the semiconductor wafer in the carrier while a thickness of the semiconductor wafer is set to be larger than a thickness of the carrier by 0 μm to 5 μm; and polishing the semiconductor wafer while feeding a polishing slurry to between the surfaces of the semiconductor wafer and surfaces of the press platens. In the polishing, an allowance of both surfaces of the semiconductor wafer is set at 5 μm or less in total. | 11-11-2010 |
20100272892 | FILM FORMATION REACTIVE APPARATUS AND METHOD FOR PRODUCING FILM-FORMED SUBSTRATE - A plurality of partial control zones (an LL zone, an LR zone, and an R zone) that can control a gas flow rate independently in a widthwise direction of a gas flow are configured on an upstream side of the gas inlet port | 10-28-2010 |
20100212588 | SEMICONDUCTOR SINGLE CRYSTAL PRODUCTION APPARATUS - An apparatus designed to increase the quality of a low-resistance semiconductor single crystal doped with an N-type volatile dopant to a high concentration and increase the production yield by controlling the pressure inside the furnace with good controllability. A vacuum line, a pressure control valve, and an open valve are newly added to the conventional semiconductor single crystal production apparatus. A controller controls the pressure control valve on the basis of a detection value of pressure detection means so as to obtain the desired low resistance value of the semiconductor single crystal. The open valve is controlled so that the open valve is opened in a case where the pressure inside the furnace detected by the pressure detection means reaches an abnormal value. | 08-26-2010 |
20100212580 | METHOD OF MANUFACTURING MONOCRYSTAL, FLOW STRAIGHTENING CYLINDER, AND MONOCRYSTAL PULLING-UP DEVICE - For manufacturing a monocrystal, a monocrystal pulling-up device controls pressure within a flow straightening cylinder to be from 33331 Pa to 79993 Pa and a flow velocity of inert gas in the cylinder to be from 0.06 m/sec to 0.31 m/sec (0.005 to 0.056 SL/min·cm | 08-26-2010 |
20100207385 | CLAMP - A clamp with which ends of two tubular members can be connected by simple work. The clamp has a support member, a first arm having one end pivotably supported by a support member, a second arm having one end pivotably supported by the support member and placed to face the first arm, a first long hole formed in the first arm on its support member side, a second long hole formed in the second arm on its support member side, and a connection member having a first pin-like member engaging with the first long hole and also having a second pin-like member engaging with the second long hole. The connection member is movable so as to separate from and approaches the support member with the distance from the connection member to the first pin-like member and the second pin-like member maintained constant. The first long hole and/or the second long hole is formed so as to extend in the direction crossing the direction X of movement of the connection member. | 08-19-2010 |
20100175612 | MANUFACTURING METHOD FOR SILICON SINGLE CRYSTAL - To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt. | 07-15-2010 |
20100151667 | DOPANT IMPLANTING METHOD AND DOPING APPARATUS - A dopant device includes: a dopant holder that holds Ge which is solid at normal temperature and liquefies the Ge near a surface of the semiconductor melt, the dopant holder including a communicating hole for delivering the liquefied Ge downwardly; a cover portion for covering the Ge held by the dopant holder; and a vent provided on the cover portion for communicating with the outside. A dopant injecting method is carried out using such a dopant device, the dopant injecting method including: loading Ge dopant in a solid state into the doping device; liquefying the solid Ge dopant loaded into the doping device while holding the doping device at a predetermined height from a surface of a semiconductor melt; and doping the semiconductor melt with the liquefied Ge that is flowed from the communicating hole. | 06-17-2010 |
20100144248 | DOUBLE-SIDE GRINDING APPARATUS FOR WAFER AND DOUBLE-SIDE GRINDING METHOD - A double-side grinding apparatus is designed to be capable of minimizing thermal expansion of hydrostatic pad members and reducing nanotopography in performing wafer grinding. The double-side grinding apparatus is a double-side grinding apparatus for wafers that can simultaneously grind either surface of a wafer to be ground by pressing a grindstone against either surface of the wafer to be ground while hydrostatically supporting either surface of the wafer to be ground in a noncontact manner. Each hydrostatic supporting unit is formed with a hydrostatic pad member facing the wafer to be ground, and a base member placed on the back surface of the hydrostatic pad member. The hydrostatic pad member is made of a ceramic member, and the base member is made of a metal member. | 06-10-2010 |
20100143579 | METHOD AND APPARATUS FOR MANUFACTURING EPITAXIAL SILICON WAFER - A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range. | 06-10-2010 |
20100133485 | PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL SUBSTRATE - In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm | 06-03-2010 |
20100116194 | SILICON CRYSTALLINE MATERIAL AND METHOD FOR MANUFACTURING THE SAME - Provided is a silicon crystalline material, which is manufactured by a CZ method to be used as a material bar for manufacturing a silicon single crystal by an FZ method and has a grasping section for being loaded in a crystal growing furnace employing the FZ method without requiring mechanical processing. A method for manufacturing such silicon crystalline material is also provided. The silicon crystalline material is manufactured by the silicon crystal manufacturing method employing the CZ method and is provided with the grasping section, which is manufactured in a similar way as a shoulder portion, a straight body portion and a tail portion in a silicon crystal growing step employing the CZ method, and is loaded in a single crystal manufacturing apparatus employing the FZ method to grow single crystals. A seed-crystal used in the silicon crystal manufacture employing the CZ method is used as the grasping section. The grasping section is manufactured by temporarily changing crystal growing conditions to form a protruding section or a recessed section on the outer circumference surface of the straight body section or by forming a dent on the shoulder portion of the straight body portion, at the time of manufacturing the silicon crystal by the CZ method. | 05-13-2010 |
20100112213 | SUSCEPTOR DEVICE, MANUFACTURING APPARATUS OF EPITAXIAL WAFER, AND MANUFACTURING METHOD OF EPITAXIAL WAFER - In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor. | 05-06-2010 |
20100105295 | POLISHING PAD SEASONING METHOD, SEASONING PLATE, AND SEMICONDUCTOR POLISHING DEVICE - A seasoning plate is placed on a polishing pad and performs seasoning of the polishing pad by abrading the polishing pad through the friction caused by rotation of the polishing pad. The seasoning plate includes: conditioners that abrade the polishing pad; a round flexible substrate that has the conditioners attached to the lower face thereof; an O-ring that is placed on the upper face of the flexible substrate, the O-ring forming a circle concentric with the flexible substrate; and a weight plate serving as a weight portion that is placed on the O-ring and applies weight for deforming the flexible substrate. | 04-29-2010 |
20100100217 | Control System and Method for Controlled Object in Time Variant System With Dead Time, Such As Single Crystal Production Device by Czochralski Method - To accurately control controlled object in a time variant system with a dead time such as a Czochralski method single crystal production device (CZ equipment). The dead time, the time constant, and the process gain value of a controlled object (CZ equipment) ( | 04-22-2010 |
20100093177 | METHOD OF CLEANING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER - A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer. | 04-15-2010 |
20100060891 | SEMICONDUCTOR WAFER INSPECTION METHOD - A semiconductor wafer inspection method includes: an imaging step in which a first image being an image of the chamfered surface seen from the main surface side and a second image being an image of the chamfered surface seen from the back surface side are taken; a calculation step in which a first width is obtained based on the first image, the first width being a width of the chamfered surface seen from the main surface side, a second width is obtained based on the second image, the second width being a width of the chamfered surface seen from the back surface side, and a ratio of the first width to the second width thus obtained is calculated; and a shape determination step in which a form of the chamfered surface is determined to be abnormal in a case where the ratio is out of a predetermined range. | 03-11-2010 |
20100050931 | METHOD FOR MANUFACTURING SINGLE CRYSTAL - Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced. | 03-04-2010 |
20100009548 | METHOD FOR HEAT-TREATING SILICON WAFER - Provided is a heat treatment method wherein generation of slip dislocation in silicon wafer RTP is suppressed, in order to solve a problem of not sufficiently suppressing generation of slip dislocation of silicon wafers in conventional RTP. A step is provided for suspending temperature rising for 10 seconds or longer at a temperature in a range of over 700° C. to below 950° C., so as to prevent generation of slip dislocation during rapid heating, at least at a silicon wafer portion that contacts with a supporting section of a rapid heating apparatus or at a portion on the outermost circumference section of the silicon wafer. | 01-14-2010 |
20090311862 | Method for manufacturing a semiconductor wafer - By removing residual mechanical stress generated during processing, wafers can be manufactured while suppressing deformation and cracking of the wafer even if the wafer is a large-diameter wafer. A method for manufacturing a wafer, includes: a slicing step (S | 12-17-2009 |
20090311460 | SEMICONDUCTOR WAFER - A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm. | 12-17-2009 |
20090297755 | SEMICONDUCTOR WAFER - A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm. | 12-03-2009 |
20090297302 | WAFER CONVEYANCE METHOD AND WAFER CONVEYANCE DEVICE - In order to make it possible to reduce the occurrence of physical damage to wafers during conveyance, a state is established in which wafers W are contained in a wafer cassette | 12-03-2009 |
20090293800 | Single crystal manufacturing apparatus and method - A Czochralski single crystal manufacturing apparatus uses multiple heaters to improve the controllability of crystal diameter. The power supplied to the multiple heaters is controlled so as to bring the pulling up speed close to a predetermined speed set value, and so as to bring the heater temperatures close to predetermined target temperature values. The ratio of electrical power between the heaters is controlled to agree with a predetermined power ratio set value which varies according to the crystal pulling up length, and the heater temperatures change along with this change, which causes disturbance to the diameter control. To compensate for this, heater temperature changes along with the power ratio set value change are taken into account in advance in the temperature set values. Accordingly, along with change of the power ratio set value, the temperature set values change to values appropriate for the current power ratio set value. | 12-03-2009 |
20090269861 | Device and method for manufacturing a semiconductor wafer - In order to manufacture an epitaxial wafer having satisfactory flatness over its entire surface, epitaxial layers are experimentally grown upon actual wafer samples under various different layer formation conditions, the thickness profiles are measured over the entire surfaces of these wafers before and after growth of the layers, and, from the differences thereof, layer thickness profiles over the entire areas of the epitaxial layers under the various different layer formation conditions are ascertained and stored. Thereafter, the thickness profile of a substrate wafer is measured over its entire area, this is added to each of the layer thickness profiles under the various different layer formation conditions which have been stored, and the planarities of the manufactured wafers which would be manufactured under these various different layer formation conditions are predicted. And one set of processing conditions is selected which is predicted to satisfy a required flatness specification, and an epitaxial layer is actually grown upon the substrate wafer under these processing conditions. | 10-29-2009 |
20090173884 | Method and apparatus for measuring spectroscopic absorbance - An object of the present invention is to provide a spectroscopic method and an apparatus which can measure a trace element accurately with high sensitivity. In order to achieve this object, for example, in Fourier transformation infrared spectroscopy (FT-IR), a reference spectrum and a measurement spectrum including an impurity spectrum are measured in order to obtain a differential spectrum comprising the impurity spectrum and a flat baseline, correction including a frequency shift of the reference spectrum before calculating a differential spectrum, is performed on the reference spectrum. This makes it possible to remove baseline deformation due to phonon absorbance of silicon included in the conventional differential spectrum, and to obtain an infrared absorption spectrum of the substitutional carbon with high accuracy and high sensitivity. | 07-09-2009 |
20090145350 | METHOD OF INJECTING DOPANT GAS - According to an dopant-injection method for injecting volatilized dopant gas into semiconductor melt in a crucible ( | 06-11-2009 |
20090053981 | METHOD OF RECYCLING ABRASIVE SLURRY - A method of recycling an abrasive slurry for recycling a slurry that: contains colloidal silica; and has been used in polishing semiconductor wafer(s) is provided. The method includes: adding a dispersant to the used slurry having been collected so as to prevent the used slurry from being gelled; irradiating ultrasound to the used slurry having been added with the dispersant so as to disperse a gelled portion and aggregated silica in the used slurry; and, by using a filter, removing a foreign substance contained in the used slurry having been irradiated with the ultrasound. | 02-26-2009 |
20090042482 | ROUGH POLISHING METHOD OF SEMICONDUCTOR WAFER AND POLISHING APPARATUS OF SEMICONDUCTOR WAFER - A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step. | 02-12-2009 |
20080224270 | SILICON SINGLE CRYSTAL SUBSTRATE AND MANUFACTURE THEREOF - A semiconductor wafer for an epitaxial growth is disclosed comprising: a main face on which a vapor phase epitaxial layer grows; a back face provided on an opposite side of the wafer; a main chamfered part along a circumferential edge where the main face and a side face of the wafer meet; and a back chamfered part along a circumferential edge where the back face and the side face meet is provided. After a CVD layer formation process is conducted to form a layer at least on the back face and the back chamfered part, a machining process is conducted on the main face to remove a CVD layer at least partially formed thereon so as to polish the main face to a mirror finished surface with a maximum height of profile (Rz) not exceeding 0.3 μm. | 09-18-2008 |