| Stanley Electric Co., Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120105786 | LIQUID CRYSTAL DISPLAY - The liquid crystal display device comprises a first and a second substrate placed opposite each other, a first electrode provided on the first substrate extending in a first direction, a second electrode provided on the second substrate extending in a second direction that is orthogonal to the first direction, and a vertically-aligned liquid crystal layer provided between the two substrates. | 05-03-2012 |
| 20120105782 | LIQUID CRYSTAL DISPLAY ELEMENT - A liquid crystal display element comprises a pair of substrates facing each other with a predetermined gap, strips of first electrodes formed on one substrate, strips of second electrodes formed on another substrate and crossing the first electrodes, an alignment film formed on at least one of the substrates and treated with an alignment process in a direction not perpendicular to a longitudinal direction of the second electrodes, a vertical alignment mode liquid crystal layer placed between the substrates and having a pretilt angle, and a pair of polarizers sandwiching the substrates, wherein the fist and the second electrodes cross each other to form pixels, and non-uniform alignment regions where liquid crystal molecules in a center of a thickness of the liquid crystal layer are aligned in a different direction from the direction defined by the alignment process appear near an edge of each pixel. | 05-03-2012 |
| 20120091489 | SUBSTRATE FOR MOUNTING LIGHT-EMITTING ELEMENTS, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING SAME - A frame body surrounding a perimeter of each light-emitting element is provided one surface of a substrate. Glass films having apertures are formed on the substrate by glass printing to form the frame body. | 04-19-2012 |
| 20120091480 | LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate, a plurality of light-emitting elements mounted on one surface of the substrate, a first glass film provided to one surface of the substrate and having a plurality of apertures that form a light-reflecting frame surrounding the perimeter of each the light-emitting elements, and a second glass film provided to the other surface of the substrate. A coefficient of thermal expansion of the second glass film is greater than that of the substrate when a coefficient of thermal expansion of the first glass film is greater than that of the substrate, and a coefficient of thermal expansion of the second glass film is less than that of the substrate when a coefficient of thermal expansion of the first glass film is less than that of the substrate. | 04-19-2012 |
| 20120086894 | LIQUID CRYSTAL DISPLAY ELEMENT - A liquid crystal display element comprises a first and a second substrates, a vertical alignment liquid crystal layer, and a first and a second polarizers arranged to cross approximately their absorption axes and an alignment direction of liquid crystal molecules when no voltage is applied at almost 45 degrees. At least one of the electrodes comprises a polyline extending to an extending direction as a whole and having no straight line in parallel to the extending direction along an electrode edge, and the polyline is formed along an edge of at least one of the first and the second electrodes where the alignment directions when a voltage is applied and when no voltage is applied are opposite to each other if the polyline is a straight line along the extending direction. | 04-12-2012 |
| 20120086880 | VERTICAL ALIGNMENT TYPE LIQUID CRYSTAL DISPLAY DEVICE WITH VIEWING ANGLE CHARACTERISTICS IMPROVED BY DISPOSING OPTICAL PLATES - First and second polarizers are disposed in cross-Nichol configuration. A liquid crystal cell is disposed between the two polarizers and establishes vertical alignment in a state of no voltage application. An even number of optical films having optical anisotropy and disposed between the liquid crystal cell and first polarizer. A retardation of the liquid crystal cell is in a range between 300 nm and 1500 nm; and each optical film satisfies nx>n≧z, an in-plane retardation is smaller than 300 nm, a thickness direction retardation is in a range between 50 nm and 300 nm, an angle between an in-plane slow axis of the optical film disposed nearest to the first polarizer and an absorption axis of the first polarizer is smaller than 45°, and the slow axes of mutually adjacent optical films are perpendicular to each other. | 04-12-2012 |
| 20120077298 | NITRIDE SEMICONDUCTOR CRYSTAL WITH SURFACE TEXTURE - A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range. | 03-29-2012 |
| 20120075591 | LIGHT SOURCE UNIT AND PROJECTOR - A light source unit includes an excitation light source and a luminescent wheel on which luminescent light emitting areas including, on a reflecting surface, red and green luminescent materials which respectively emit light of red and green wavelength band, when receiving excitation light, and a diffuse transmission area which diffuses and transmits excitation light, are aligned end to end in a circumferential direction. An excitation light incident surface of a luminescent material layer of the luminescent wheel has a surface with a plurality of projecting bodies. Regular quadrangular pyramids are arranged thereon in a matrix with outer boundaries of bottom portions of adjacent regular quadrangular pyramids contacting each other. The pyramids rise at a rising angle of at least 30°, and a length of one side of an outer boundary of the bottom portion of the pyramid is between 10 and 100 μm. | 03-29-2012 |
| 20120075561 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate having a first electrode on one surface side, a second substrate having second electrode on one surface side and placed opposite to the first substrate. A liquid crystal layer having a pretilt angle of 89.7° or more and less than 90° is disposed between the first and second electrodes. The first and second electrodes respectively form a pixel in opposing areas. The first electrode includes rectangularly shaped openings disposed with regularity in the pixel in a planar view. The openings include first and second openings with longitudinal directions respectively facing first and second directions, the second direction different from the first direction. The angle formed by the longitudinal directions of the first and second openings, and an alignment direction of liquid crystal molecules at the substantial center of the liquid crystal layer is 0° or more and less than 90°. | 03-29-2012 |
| 20120075221 | TOUCHSCREEN PANEL INPUT DEVICE MANUFACTURING METHOD, PIEZOELECTRIC ELEMENT AND TOUCHSCREEN PANEL INPUT DEVICE - A touchscreen panel input device is manufactured by forming a first adhesion layer and a second adhesion layer on a growth substrate, removing only the second adhesion layer from a selected region by irradiating laser, forming a growth base layer on the selected region where the second adhesion layer is removed and on the second adhesion layer and an oxide thin film having piezoelectricity on the growth base layer, transferring the oxide thin film layer on the selected region to a second substrate having first transparent electrodes by peeling-off, and adhering the second substrate to a third substrate having second transparent electrodes by placing the transferred oxide thin film layer between them. The touchscreen panel input device detects a pushing pressure in addition to a touch position with proving a tactile feedback. | 03-29-2012 |
| 20120069278 | LIQUID CYRISTAL DISPLAY ELEMENT - A simple matrix type dot-matrix liquid crystal display element includes a first and a second transparent substrate disposed opposite to each other, first and second transparent electrodes disposed on the opposed face of the first and the second transparent substrate, respectively, a first and a second vertical alignment film disposed on the opposed side of the first and the second transparent substrate to cover the first and the second electrodes, respectively, a liquid crystal layer disposed between the opposed side of the first and the second transparent substrate and having Δ∈<0 and Δnd>450 nm, and a first and a second viewing angle compensation plate disposed on the unopposed side of the first and the second transparent substrate, respectively, wherein in the first transparent electrode, openings extending in a predefined direction are aligned. | 03-22-2012 |
| 20120063117 | LIGHT SOURCE APPARATUS - Provided is a light source apparatus having a phosphor layer | 03-15-2012 |
| 20120061715 | SEMICONDUCTOR LIGHT-EMITTING DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers. | 03-15-2012 |
| 20120061642 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface of the p-type semiconductor layer; a second transparent electrode made of a metal oxide transparent conductor provided on the surface of the p-type semiconductor layer and electrically connected to the first transparent electrode; and a p-side electrode pad made of metal provided on a surface of the second transparent electrode. The second transparent electrode is higher in contact resistance with the p-type semiconductor layer than the first transparent electrode. | 03-15-2012 |
| 20120025251 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions. The second cladding layer has a stacked structure, which includes a first current-spreading layer, a first light-extracting layer on the first current-spreading layer and having the light-extracting structure on the bottom surfaces of the recesses, a second current-spreading layer on the first light-extracting layer, and a second light-extracting layer on the second current-spreading layer and having the light-extracting structure on the top surfaces of the protrusions, and the first and second light-extracting layer have lower light absorptance and higher resistance than the first and second current-spreading layer. | 02-02-2012 |
| 20120008069 | LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display apparatus includes a vertical alignment type liquid crystal cell including a first substrate formed with a first electrode, a second substrate formed with a second electrode, and a liquid crystal layer containing liquid crystal molecules given a pretilt angle. A pair of polarizer plates sandwiches the cell, and a driver device applies a voltage of a multiplex driving waveform across the first and second electrodes. In a display in-plane parallel to a surface of the first or second substrate, at least one of the first and second electrodes has a zigzag border alternately coupling a first border perpendicular to display in-plane components of directors of liquid crystal molecules in a middle area along a thickness direction of the liquid crystal layer in the absence of applied voltage and a second border extending along a direction crossing the first border. | 01-12-2012 |
| 20110304803 | LIQUID CRYSTAL DISPLAY - A vertical alignment type liquid crystal display, which has a liquid crystal layer whose retardation value is about 600 nm or more, can solve the viewing angle problems associated with the wider viewing angle. The liquid crystal display can include a vertical alignment liquid crystal cell, and first and second polarizing plates cross-Nicol disposed on respective sides of the liquid crystal cell. The liquid crystal cell has a liquid crystal layer with a retardation of about 600 nm or more. A C-plate and an A-plate are provided between the liquid crystal cell and the first polarizing plate, and two C-plates are provided between the liquid crystal cell and the second polarizing plate. | 12-15-2011 |
| 20110304802 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes a first substrate including a first electrode, a second substrate including a second electrode, and a liquid crystal layer provided between the first substrate and the second substrate which is controlled to a substantially vertical orientation having a pretilt angle smaller than 90 degrees. The first electrode includes a plurality of rectangular openings extending in a direction substantially perpendicular to the orientation direction of liquid crystal molecules at substantially a center of the liquid crystal layer. A plurality of first areas and a plurality of second areas disposed mutually alternately are set in an effective display area in which the first electrode and the second electrode overlap in a planar view. Relative positions of the openings are mutually unmatched relative to at least a part of the plurality of second areas, and the openings are not formed in the plurality of first areas. | 12-15-2011 |
| 20110285965 | DISPLAY DEVICE - A display device includes: a wall defining a viewer-side space; an observed object arranged in an object-side space partitioned off the viewer-side space by a portion of the wall; an imaging optical system of real specular image including a semitransparent substrate with a plane of symmetry for defining the viewer-side space and the object-side space as the portion of the wall to image a real image of the observed object in the viewer-side space with light passing through the substrate; a screen surface having a function of diffuse reflection and provided with the substrate so as to face the viewer-side space; and a projector optical system projecting an image on the screen surface in the viewer-side space. | 11-24-2011 |
| 20110284897 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The device includes a first ceramic layer; a second ceramic layer on the first ceramic layer and having a light emitting element mounting area; a reflective layer so formed on a surface of the second ceramic layer that the reflective layer covers at least the mounting area; a protective layer which covers the reflective layer; a semiconductor light emitting element mounted on the protective layer positioned above the element mounting area; and at least one heat dissipation via passing through the first ceramic layer. The heat dissipation via is disposed in a position that does not overlap with the element mounting area in a direction in which the ceramic layers are stacked. | 11-24-2011 |
| 20110278602 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes a substrate having an element mounting area in a principal surface thereof. The light emitting device also includes at least one light emitting element mounted in the element mounting area of the substrate. The light emitting device also includes a heat transfer member provided on the substrate. The heat transfer member has a thermal conductivity different from thermal conductivity of the substrate so as to form uneven thermal resistance distribution in the element mounting area. Thermal resistance in a heat radiation path through the substrate for release of heat emitted from the light emitting element changes with the mounting position of the light emitting element. | 11-17-2011 |
| 20110234572 | LIGHT DEFLECTING APPARATUS - A light deflecting apparatus includes first and second light deflecting liquid crystal cells, each corresponding to each eye of a user and each comprising a liquid crystal layer including liquid crystal molecules with positive dielectric anisotropy and exhibiting a cholesteric blue phase when no voltage is applied, a pair of transparent substrates sandwiching the liquid crystal layer, a pair of transparent electrodes each being formed above each transparent substrate, a prism layer formed above one of the transparent substrates, and a driving device switching between a first state wherein the first and the second light deflecting liquid crystal cells are respectively in a homeotropic phase and a cholesteric blue phase, and a second state wherein the first and the second light deflecting liquid crystal cells are respectively in a cholesteric blue phase and a homeotropic phase. | 09-29-2011 |
| 20110233516 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING PROTRUSION STRUCTURE OF PARALLELOGRAM CELLS AND ITS MANUFACTURING METHOD - In an optical semiconductor device including a support body, semiconductor layers made of (Al | 09-29-2011 |
| 20110227038 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND A PRODUCTION METHOD THEREOF - A semiconductor light emitting device comprising a semiconductor layer of (Al | 09-22-2011 |
| 20110217803 | PRODUCTION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICES - Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as Al | 09-08-2011 |
| 20110201181 | APPARATUS AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL FILM - An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber. | 08-18-2011 |
| 20110198647 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device which can suppress the self-absorption of light propagating in a semiconductor film without hindering current spread therein. A reflecting film provided between a support substrate and the semiconductor film of the device includes reflecting electrodes that are in ohmic contact with the semiconductor film and that form current paths between the reflecting electrodes and surface electrodes in the semiconductor film. The reflecting electrodes are in contact with the semiconductor film at such positions that the surface electrodes, provided on the light-extraction-surface-side surface of the semiconductor film, are not over the reflecting electrodes along a direction of the thickness of the semiconductor film. The semiconductor film has reflecting-surface-side recesses made in regions containing regions directly under the surface electrodes and recessed toward the light-extraction-surface side, and reflecting-surface-side protrusions provided in regions containing parts of the semiconductor film in contact with the reflecting electrodes and bonded to the support substrate via the reflecting film. | 08-18-2011 |
| 20110198634 | SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×10 | 08-18-2011 |
| 20110193120 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device includes a support substrate, a reflective electrode on the support substrate; an AlGaInP-based semiconductor film including a light-emission layer and is provided on the reflective electrode, and a surface electrode provided on the semiconductor film. The surface electrode includes an ohmic electrode constituted by electrode pieces disposed on the semiconductor film in a distributed manner; the reflective electrode is constituted by a line electrode and dot electrodes provided on both sides of each of the electrode pieces, along the electrode pieces; the surface electrode and the reflective electrode are disposed so as to satisfy the following equations: | 08-11-2011 |
| 20110175105 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides. | 07-21-2011 |
| 20110175057 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm. | 07-21-2011 |
| 20110162495 | METHOD FOR MANUFACTURING IMAGING ELEMENT - Provided is an accurately processed imaging element that can be readily manufactured for saving time and cost. A blade section | 07-07-2011 |
| 20110157909 | LAMP UNIT - A lamp unit is constructed of light sources, a reflector, a lamp housing that receives the light sources and the reflector therein, and a lamp lens that closes an opening of the lamp housing. The reflector has a through hole that is formed in a portion positioned above a first light source as a heat source, so that air warmed by heat of the first light source can be introduced into a rear side of the reflector via the through hole. The air introduced into the rear side of the reflector via the through hole and ascending therein can be lead by a first guide means to an air stagnating portion positioned in an end periphery of a hermetically-closed space that is defined by the lamp housing and the lamp lens. | 06-30-2011 |
| 20110104835 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS - A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements. Removed regions include regions where the guide grooves are formed, and side walls of the second semiconductor layer formed by the guide grooves have a beveled shape at intersections of the guide grooves. | 05-05-2011 |
| 20110095330 | OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS - A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove the growth substrate; and (e) carrying out a thermal treatment in order to even density distributions of crystal grains and voids in the copper forming the metal support. | 04-28-2011 |
| 20110089418 | ZINC OXIDE BASED COMPOUND SEMICONDUCTOR DEVICE - In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants. | 04-21-2011 |
| 20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 04-14-2011 |
| 20110080554 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING LIGHT DEFLECTING LIQUID CRYSTAL CELL - A light emitting apparatus comprises a lamination of a first and a second light deflecting liquid crystal cells, a voltage applying device applying voltages to the light deflecting liquid crystal cells and an optical system irradiating incident light to the first light deflecting liquid crystal cell. Each cell comprises a prism layer having a prism extending in a predetermined direction, an alignment film formed on the prism layer and a liquid crystal layer having liquid crystal molecules. Long axis directions of the liquid crystal molecules are oriented in the predetermined direction on an interface between the alignment film and liquid crystal layer in the first cell and in a direction orthogonal to the predetermined direction in the second cell. The liquid crystal cells can change a course of light by deflecting both polarized light components of incident light. | 04-07-2011 |
| 20110073857 | SEMICONDUCTOR DEVICE, ITS MANUFACTURE METHOD AND TEMPLATE SUBSTRATE - A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. | 03-31-2011 |
| 20110069256 | SEMICONDUCTOR LIGHT EMITTING APPARATUS, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY APPARATUS USING THE SAME - A method for manufacturing a semiconductor light emitting apparatus of side emission type includes disposing a light emitting device on a substrate having a predetermined electrode pattern. A side member is disposed on the substrate to be spaced apart from the light emitting device with a predetermined space. The light emitting device and the electrode pattern are electrically connected. A light reflecting member is disposed in the space between the side member and at least one side surface of the light emitting device so that the light reflecting member is in contact with the at least one side surface of the light emitting device. A light-transmitting sealing member is disposed to surround the light emitting device other than the at least one side surface that is in contact with the light reflecting member. A light-reflective ceiling member is disposed at least over the sealing member. | 03-24-2011 |
| 20110062484 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode. | 03-17-2011 |
| 20110062452 | METHOD FOR PRODUCING ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of Mg | 03-17-2011 |
| 20110059563 | MANUFACTURE METHOD FOR ZnO-BASED LIGHT EMITTING DEVICE - A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type. | 03-10-2011 |
| 20110052871 | HEAT DISSIPATING MATERIAL INCLUDING CARBON SUBSTRATE WITH NANOMETER-ORDER UNEVEN STRUCTURE AND ITS MANUFACTURING METHOD - A heat dissipating material includes a carbon substrate having an uneven structure on a surface thereof, and a size of the uneven structure is on the nanometer-order. | 03-03-2011 |
| 20110051102 | LIGHT SOURCE UNIT AND PROJECTOR - With a view to providing a light source unit which can emit light source light of high luminance and high intensity even in the small quantity of excitation light, there is provided a light source unit including an excitation light source for emitting light in a blue wavelength band, a fluorescent wheel, a light emitting device for emitting light in a red wavelength band and a light guiding optical system for guiding light emitted from the fluorescent wheel and the light emitting device to a light guiding device, wherein the fluorescent wheel is made up of a fluorescent area where a green fluorescent material layer for emitting fluorescent light in a green wavelength band is disposed and a diffuse area for converting light emitted from the excitation light source into diffuse light of which directivity is weak are disposed end to end in a circumferential direction, and wherein the green fluorescent material layer is such that a concentration of weight content of the green fluorescent material in the green fluorescent material layer relative to the fluorescent material layer and a thickness thereof are determined so that a luminescent intensity of fluorescent light emitted from the green fluorescent material layer is enhanced. | 03-03-2011 |
| 20110043653 | ELECTROMAGNETIC FIELD HIGH SPEED IMAGING APPARATUS - An electromagnetic field high speed imaging apparatus, using an image sensing element having a filter function for each pixel, converts a local polarization state in detection light containing a difference frequency component Δf (|fLO−fRF|) between the modulation frequency fLO of irradiated light and the frequency fRF of the electromagnetic field emitted from a subject into local intensity of light, and captures it by an image sensor of an imaging unit to generate a two-dimensional image of distribution of the near electromagnetic field emitted from the subject. Each pixel of the image sensor comprises a photoelectric conversion element for converting the detection light from the optical unit into an electric charge, a plurality of charge storages, and a charge splitting part for dividing the electric charge generated in the photoelectric conversion element between the plurality of charge storages. | 02-24-2011 |
| 20110042708 | OPTICAL SEMICONDUCTOR DEVICE HAVING METAL LAYER WITH COARSE PORTION SANDWICHED BY TIGHT PORTIONS AND ITS MANUFACTURING METHOD - In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions. | 02-24-2011 |
| 20110027922 | SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURE METHOD - A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate. | 02-03-2011 |
| 20100320493 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device comprises a substrate for mounting at least one light emitting element, a reflective film formed on the substrate, an edge of which rises perpendicularly to a surface of the substrate, and at least one light emitting element. A decrease in a reflected luminous flux from a reflective film can be restrained. | 12-23-2010 |
| 20100301522 | METHOD FOR MANUFACTURING RESIN MOLD ASSEMBLY - In manufacturing a resin mold assembly, a first weld region of a light transmitting resin member and a second weld region of a light absorbing resin member are disposed facing each other, the first weld region of the light transmitting resin member and the second weld region of the light absorbing resin member are brought into pressed state in mutually facing direction, and a laser beam is scanned to make the laser beam be incident upon the light transmitting resin member, and repetitively radiated on the second weld region to heat and melt a whole of the first and second weld regions simultaneously, thereby welding the light transmitting resin member and the light absorbing resin member. | 12-02-2010 |
| 20100295040 | METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250° C. to 450° C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600° C. to 900° C. using a polar oxygen material and a metalorganic compound containing no oxygen. | 11-25-2010 |
| 20100295039 | METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method. | 11-25-2010 |
| 20100289042 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface. | 11-18-2010 |
| 20100258796 | ZINC OXIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a ZnO-based semiconductor device, the method includes a first metal layer formation step of forming a first metal layer on a p-type ZnO-based semiconductor layer in island-form and/or mesh-form; a heat treatment step of performing heat treatment of the first metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer comprising elements of the p-type ZnO-based semiconductor layer and the first metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the first metal layer; and a second metal layer formation step of forming a second metal layer so as to cover the first metal layer and the exposed portions of the p-type ZnO-based semiconductor layer through openings of the first metal layer. | 10-14-2010 |
| 20100258795 | ZINC OXIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer. | 10-14-2010 |
| 20100245966 | ACTUATOR DEVICE FOR OPTICAL DEFLECTOR - An actuator device for optical deflector includes a base for mounting an optical deflector deflecting a light beam from a light source, at least one piezoelectric actuator translating and vibrating said base; and a supporting body supporting said piezoelectric actuator. | 09-30-2010 |
| 20100233836 | METHOD FOR MANUFACTURING ZINC OXIDE BASED SEMICONDUCTOR DEVICE - A method for manufacturing a ZnO based compound semiconductor device including a contact for a p-type ZnO based compound semiconductor electrode is provided. The method includes forming a stacked body including a substrate, and an n-type ZnO based semiconductor layer and a p-type ZnO based semiconductor layer on the substrate, with the p-type ZnO based semiconductor layer exposed to outside. The stacked body is subjected to heat treatment so that a surface temperature of the p-type ZnO based semiconductor layer is in the range of 250° C. to 500° C. After the heat treatment, a p-side metal electrode is formed on the p-type ZnO based semiconductor layer at a temperature lower than 550° C. And an n-side metal electrode is formed on the n-type ZnO based semiconductor layer. | 09-16-2010 |
| 20100224898 | OPTICAL SEMICONDUCTOR DEVICE HAVING AIR GAP FORMING REFLECTIVE MIRROR AND ITS MANUFACTURING METHOD - In an optical semiconductor device including an epitaxially-grown light emitting semiconductor layer and a reflective electrode layer provided at a counter face of the light emitting semiconductor layer opposing a light extracting face thereof, a support electrode layer is provided between the reflective electrode layer and the counter face of the light emitting semiconductor layer and is adapted to support the light emitting semiconductor layer and electrically connect the light emitting semiconductor layer to the reflective electrode layer. Also, a total area of the support electrode layer is smaller than an area of the reflective electrode layer. Further, an air gap at a periphery of the support electrode layer and the reflective electrode layer serves as a reflective mirror. | 09-09-2010 |
| 20100181550 | Manufacture method for ZnO based semiconductor crystal and light emitting device using same - A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. | 07-22-2010 |
| 20100155740 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer. | 06-24-2010 |
| 20100148309 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion. | 06-17-2010 |
| 20100134749 | CHARACTER TYPE VERTICAL ALIGNMENT MODE LIQUID CRYSTAL DISPLAY DEVICE WITH WALL LAYERS - In a character type vertical alignment type liquid crystal display device including first and second substrates opposing each other, a first electrode layer including a plurality of first electrodes provided at an inner side of the first substrate, a second electrode layer including a plurality of second electrodes provided at an inner side of the second substrate, and a vertical alignment mode liquid crystal layer provided between the first and second substrates, a wall structure is provided between the first and second substrates. | 06-03-2010 |
| 20100123129 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND DEVICE USING THE SAME - Mg is doped in a ZnO-containing semiconductor layer in a concentration range from 1×10 | 05-20-2010 |
| 20100120237 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattice that form streets, not reaching the metal support in the semiconductor film. The surface of the semiconductor film at the bottom of the grooves is flattened. The semiconductor film along the device division lines at the bottom of the grooves are further etched by wet etching to expose the metal support at the bottom of the grooves to finish the streets. | 05-13-2010 |
| 20100120228 | SEMICONDUTOR MANUFACTURING METHOD - A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates though a portion of said metal support that remains where the first divining groove is formed. | 05-13-2010 |
| 20100117115 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure. | 05-13-2010 |
| 20100097559 | SIMPLE MATRIX VERTICAL ALIGNMENT MODE LIQUID CRYSTAL DISPLAY DEVICE WITH LINEAR WALL LAYERS - In a simple matrix vertical alignment mode liquid crystal display device including first and second substrates opposing each other, a first electrode layer including a plurality of first electrodes provided at an inner side of the first substrate, a second electrode layer including a plurality of second electrodes provided at an inner side of the second substrate, and a vertical alignment mode liquid crystal layer provided between the first and second substrates, a plurality of linear wall layers are provided between the first and second substrates in parallel with the first electrodes. | 04-22-2010 |
| 20100065843 | ZINC OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed. | 03-18-2010 |
| 20100064966 | METHOD OF GROWING ZINC-OXIDE-BASED SEMICONDUCTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and (b) performing crystal growth at a high growth temperature and at a pressure higher than the low growth pressure to form a high-temperature grown single-crystal layer on the low-temperature grown single-crystal layer. | 03-18-2010 |
| 20100059781 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - In an exemplary embodiment of the invention, a semiconductor light-emitting element includes a first semiconductor layer having a first conduction type, a second semiconductor layer having a second conduction type, an active layer provided between the first and second semiconductor layers. The semiconductor light-emitting element also includes a polarity inversion layer provided on the second semiconductor layer, and a third semiconductor layer provided on the polarity inversion layer. The third semiconductor layer has the second conduction type. The crystal orientations of the first through third semiconductor layers are inverted, with the polarity inversion layer serving as a boundary. The first and third semiconductor layers have uppermost surfaces that are made from polar faces having common constitutional elements. Hexagonal conical protrusions arising from a crystal structure are formed at the outermost surfaces of the first and third semiconductor layers. The first through third semiconductor layers are made from a wurtzite-structure group III nitride semiconductor, and are layered along the C-axis direction of the crystal structure. In another embodiment, the polar faces may be made from nitrogen atoms. The hexagonal conical protrusions may be formed by wet etching. | 03-11-2010 |
| 20100053522 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes: a liquid crystal layer squeezed between first and second substrates and vertically aligned at a retardation of 300-1000 nm; first and second compensators disposed on the first substrate and having negative biaxial optical anisotropy; a first polarizer disposed on the first and second compensators; and a second polarizer on the second substrate disposed crossed-Nichol with said first polarizer, wherein: the second compensator is disposed between the first substrate and first compensator; an in-plane slow axis of the first compensator is disposed perpendicular to an absorption axis of the first polarizer; the in-plane slow axis of the first compensator is disposed perpendicular to an in-plane slow axis of the second compensator; and a retardation in an in-plane direction of the first compensator is larger than that of the second compensator. | 03-04-2010 |
| 20100044734 | MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND SEMICONDUCTOR LIGHT-EMITTING APPARATUS - A method includes forming a light-emission operating layer on a growth substrate; forming a reflection insulating layer on the light-emission operating layer; forming opening portions in the insulating layer; forming a contact portion which has a thickness adapted to flatten the opening portions and has been embedded into the opening portions; forming an electrode layer on the insulating layer and the contact portions; forming a first bonding metal layer on the electrode layer; preparing a supporting substrate in which a second bonding metal layer has been formed; and making the first and second bonding metal layers molten and joined. | 02-25-2010 |
| 20100034230 | ARSENIC DOPED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE - A semiconductor light emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the active layer and made of AlGaInP mixed crystal of a second conductivity type opposite to the first conductivity type, wherein the first clad layer and the second clad layer each have a band gap wider than a band gap of the active layer, and at least one of the active layer and the first and second clad layers is doped with arsenic at an impurity concentration level not changing the band gap. Carbon capturing is suppressed, and surface morphology is suppressed from being degraded. | 02-11-2010 |
| 20100033072 | FIELD EMISSION ELECTRON SOURCE - A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode. | 02-11-2010 |
| 20100026946 | LIQUID CRYSTAL DISPLAY - A liquid crystal display includes: a liquid crystal layer squeezed between first and second transparent substrates and vertically aligned at a retardation of 300 nm or larger to 940 nm or smaller; two or three viewing angle compensators disposed on the first transparent substrate on the side opposite to the liquid crystal layer, each of the viewing angle compensators having a retardation of 90 nm or larger to 350 nm or smaller in a thickness direction and a retardation of 5 nm or larger to 30 nm or smaller in an in-plane direction; a first polarizer disposed on the two or three viewing angle compensator; and a second polarizer disposed on the second transparent substrate and crossed-Nichol disposed relative to the first polarizer, wherein an in-plane slow axis of each viewing angle compensator is disposed perpendicular to an absorption axis of the first polarizer. | 02-04-2010 |
| 20100014546 | OPTICAL PULSE GENERATING APPARATUS USING PHOTOELECTRIC EFFECT OF SURFACE PLASMON RESONANCE PHOTONS AND ITS MANUFACTURING METHOD - In an optical pulse generating apparatus including a metal layer having an incident/reflective surface adapted to receive incident light and output its reflective light as an optical pulse signal, a dielectric layer formed on an opposite surface of the metal layer opposing the incident/reflective surface, and a dielectric layer exciting unit for exciting the dielectric layer on a time basis, the incident light exciting surface plasmon resonance light in the metal layer while the dielectric layer is excited on a time basis, so that an extinction coefficient of the dielectric layer is made negative. | 01-21-2010 |
| 20100006876 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH SURFACE TEXTURE AND ITS MANUFACTURE - A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture. | 01-14-2010 |
| 20090323151 | OPTICAL DEFLECTOR - An optical deflector includes a mirror having a reflective plane; a torsion bar extending outwardly from a side of said mirror; a support surrounding said mirror; a piezoelectric cantilever including a supporting body and a piezoelectric body formed on the supporting body, one end of said piezoelectric cantilever being connected to said torsion bar, the other end of the piezoelectric cantilever being connected to said support, said piezoelectric cantilever, upon application of a driving voltage to the piezoelectric body, exhibiting a bending deformation due to piezoelectricity so as to rotate said torsion bar, thereby rotarily driving said mirror through said torsion bar; and an impact attenuator connected to said support, the impact attenuator being disposed in a gap between said mirror and said support. | 12-31-2009 |
| 20090322668 | MONOCHROMATIC LIQUID CRYSTAL DISPLAY - A liquid crystal display comprises a back light emitting monochromatic light, a liquid crystal display element comprising, a pair of opposing substrates, a nematic liquid crystal layer placed between the pair of opposing substrates, an electrode pattern formed on a nematic liquid crystal layer side of each substrate, a pair of polarizers placed outside the pair of substrates, and a controller which controls light emission of the back light and a voltage applied to the liquid crystal display element, wherein the controller restrain change in retardation of the liquid crystal display element by lowering non-selection voltage applied to the liquid crystal display element when environmental temperature increases and increasing non-selection voltage applied to the liquid crystal display element when environmental temperature decreases. | 12-31-2009 |
| 20090310382 | IMAGE DISPLAY DEVICE - An image display device comprises a light-emitting unit ( | 12-17-2009 |
| 20090296200 | OPTICAL AMPLIFIER USING PHOTOELECTRIC EFFECT OF SURFACE PLASMON RESONANCE PHOTONS AND ITS MANUFACTURING METHOD - In an optical amplifier including a metal layer having an incident/reflective surface adapted to receive incident light and output its reflective light, and a dielectric layer formed on an opposite surface of the metal layer opposing the incident/reflective surface, the incident light excites surface plasmon resonance light in the metal layer while the dielectric layer is excited, so that an extinct ion coefficient of the dielectric layer is made negative. | 12-03-2009 |
| 20090294758 | ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO. | 12-03-2009 |
| 20090284150 | PHOTOCATHODE APPARATUS USING PHOTOELECTRIC EFFECT OF SURFACE PLASMON RESONANCE PHOTONS - A photocathode apparatus is constructed by a transparent body adapted to receive incident light, and a metal cover layer formed on a surface of the transparent body. The incident light reaches an incident/reflective surface of the metal cover layer through the surface of the transparent body to excite surface plasmon resonance light in the incident/reflective surface of the metal cover layer, thus emitting photoelectrons from a photoelectric surface of the metal cover layer opposite to the incident/reflective surface thereof by the photoelectric effect of one of the surface plasmon resonance photons and its second harmonic generation wave. | 11-19-2009 |
| 20090278174 | PIXEL STRUCTURE OF SOLID-STATE IMAGE SENSOR - A pixel structure of a solid-state image sensor in which residual electrons in a photodiode is reduced and which has a first-stage gate that is arranged adjacent to the photodiode and controls read-out of electrons generated in the photodiode, a second-stage gate that is adjacent to the first-stage gate on the rear stage of the gate at a predetermined gap and controls movement of electrons read out by the readout control of the first-stage gate to the plurality of the charge-storage sections, and a plurality of third-stage gates that are adjacent to the second-stage gate on the rear stage of the gate at a predetermined gap, severally arranged corresponding to the plurality of the charge-storage sections, and perform control of distributing the electrons moved by the movement control of the second-stage gate severally to the plurality of the charge-storage sections, and gradient on which electrons are moved in the first-stage gate direction is formed on the potential of the photodiode. | 11-12-2009 |
| 20090272972 | ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO | 11-05-2009 |
| 20090267065 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 μm and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves. | 10-29-2009 |
| 20090239324 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SEPARABLE SUPPORT BODY - In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer. | 09-24-2009 |
| 20090236598 | ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer. | 09-24-2009 |
| 20090225257 | LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display apparatus includes: a vertical alignment type liquid crystal cell including a first substrate formed with a first electrode, a second substrate formed with a second electrode, and a liquid crystal layer containing liquid crystal molecules given a pretilt angle; a pair of polarizer plates sandwiching the cell; and a driver device for applying a voltage of a multiplex driving waveform across the first and second electrodes, wherein in a display in-plane parallel to a surface of the first or second substrate, at least one of the first and second electrodes has a zigzag border alternately coupling a first border perpendicular to display in-plane components of directors of liquid crystal molecules in a middle area along a thickness direction of the liquid crystal layer in the absence of applied voltage and a second border extending along a direction crossing the first boarder. | 09-10-2009 |
| 20090213313 | VERTICAL ALIGNMENT TYPE LIQUID CRYSTAL DISPLAY DEVICE WITH VIEWING ANGLE CHARACTERISTICS IMPROVED BY DISPOSING OPTICAL PLATES - First and second polarizers are disposed in cross Nichol configuration. A liquid crystal cell is disposed between the two polarizers and establishes vertical alignment in a state of no voltage application. An even number of optical films having optical anisotropy and disposed between the liquid crystal cell and first polarizer. A retardation of the liquid crystal cell is in a range between 300 nm and 1500 nm; and each optical film satisfies nx>ny≧nz, an in-plane retardation is smaller than 300 nm, a thickness direction retardation is in a ranger between 50 nm and 300 nm, an angle between an in-plane slow axis of the optical film disposed nearest to the first polarizer and an absorption axis of the first polarizer is smaller than 45°, and the slow axes of mutually adjacent optical films are perpendicular to each other. | 08-27-2009 |
| 20090206333 | ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure. | 08-20-2009 |
| 20090190351 | LIGHTING FIXTURE USING STRIP-SHAPED LUMINOUS BODY - According to a lighting fixture of an aspect of the present invention, only by holding the first and second strip-shaped luminous bodies on the strip-shaped luminous body holding device with the first and second strip-shaped luminous bodies being curved into a predetermined shape, the plurality of point light sources of the first strip-shaped luminous body and the plurality of point light sources of the second strip-shaped luminous body can be mounted at predetermined positions in appropriate postures (for example, such positions and postures as to illuminate a predetermined area of the front of the lighting fixture) at once. That is, each of the point light sources can be stereoscopically disposed at a predetermined position in an appropriate posture in a most expeditious manner. Also, the lighting fixture of novel visual quality capable of producing a stereoscopic effect by the real image can be provided. | 07-30-2009 |
| 20090185253 | OPTICAL DEFLECTOR - An optical deflector includes a mirror having a reflective plane; a torsion bar extending outwardly from an end of said mirror; a support surrounding said mirror; a first piezoelectric element, one end of said first piezoelectric element being connected to said torsion bar, the other end of the first piezoelectric element being connected to and supported by said support, said first piezoelectric element having at least one piezoelectric cantilever, the cantilever including a supporting body and a piezoelectric body formed on the supporting body to exhibit bending deformation due to piezoelectricity when a driving voltage is applied to the piezoelectric body, said piezoelectric element rotarily driving said mirror through said torsion bar when said driving voltage is applied; and a second piezoelectric element, one end of said second piezoelectric element being connected to said torsion bar, the other end of the second piezoelectric element being connected to and supported by said mirror. | 07-23-2009 |
| 20090180167 | OPTICAL DEFLECTOR - An optical deflector includes a mirror having a reflective plane; a torsion bar extending outwardly from a side of said mirror; a support surrounding said mirror; a piezoelectric cantilever including a supporting body and a piezoelectric body formed on the supporting body, one end of said piezoelectric cantilever being connected to said torsion bar, the other end of the piezoelectric cantilever being connected to said support, said piezoelectric cantilever, upon application of a driving voltage to the piezoelectric body, exhibiting a bending deformation due to piezoelectricity so as to rotate said torsion bar, thereby rotarily driving said mirror through said torsion bar; and an impact attenuator connected to said support, the impact attenuator being disposed in a gap between said mirror and said support. | 07-16-2009 |
| 20090168446 | VEHICLE LIGHT - A vehicle light can include a reflector and a light source. The reflector has a reflection surface formed by at least part of a parabolic cylindrical surface obtained by moving a parabola by parallel displacement, where the parabola has a coefficient of 0.5, a focal length, and a focal point. The light source includes at least one set of at least two light emitting devices that have respective light emission surfaces facing toward the reflection surface. The at least two light emitting devices include a front light emitting device and a rear light emitting device spaced apart by a predetermined distance along an illumination direction of the vehicle light, with the focal point interposed between the front and rear light emitting devices. | 07-02-2009 |
| 20090161338 | ELECTRONIC FLASH APPARATUS - An electronic flash apparatus includes a flash device, a light emitting device which is different from the flash device, and a concave reflector configured to reflect light beams from the flash device and the light emitting device. The concave reflector includes a flash-device reflecting surface configured to reflect the light beams from the flash device and a light-emitting-device reflecting surface configured to reflect the light beams from the light emitting device. The flash device is disposed inside the concave reflector, and the light emitting device is disposed outside the concave reflector. The light-emitting-device reflecting surface is disposed at a position where a light path of the light beams from the flash device does not exist. The apparatus further includes a light guiding member configured to guide the light beams from the light emitting device to the light-emitting-device reflecting surface positioned inside the concave reflector. | 06-25-2009 |
| 20090124042 | ZnO BASED SEMICONDUCTOR DEVICE MANUFACTURE METHOD - A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a −C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the −C plane of the ZnO based semiconductor substrate | 05-14-2009 |
| 20090122297 | RANGE IMAGE GENERATING APPARATUS - A range image generating apparatus capable of preventing or reducing generation of range images with interference which contain e.g., pixels with erroneous distance values is provided. The range image generating apparatus includes: a light source radiating a light; an image pickup element; a range image generating unit; a frequency changing unit that changes a modulation frequency for each frame rate or charge storage time; and a control unit that controls the light source and the image pickup element in synchronization with the modulation frequency changed by the frequency changing unit. | 05-14-2009 |
| 20090086509 | LIGHT GUIDE PLATE FOR SURFACE LIGHT SOURCE - A plurality of mirror surfaces ( | 04-02-2009 |
| 20090086132 | LIQUID CRYSTAL DISPLAY UNIT - A liquid crystal display unit has: a pair of opposing substrates; an electrode pattern formed on each of the substrates on an opposing surface side; a vertical alignment film formed on each of the substrates and covering the electrode pattern; a liquid crystal layer squeezed between the substrates; and a pair of polarizer plates formed on the substrates on an opposite side to the side of said liquid crystal layer, wherein an edge of the electrode pattern includes a zigzag pattern parallel to one of axis directions of the polarizer plates and a direction perpendicular the axis direction. Optical through can be reduced along an edge portion of a pixel of a vertical alignment LCD. | 04-02-2009 |
| 20090066621 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes: a liquid crystal display unit including a plurality of display units each switching between bright display and dark display; a backlight having a light source of a plurality of colors for making light emitted from the light source be incident upon the liquid crystal display unit; and a drive unit for performing field sequential driving through synchronization of the liquid crystal display unit and backlight, wherein the drive unit controls a state of bright/dark display of the liquid crystal display unit to realize a display pattern corresponding to each subframe obtained by dividing a frame into a plurality of subframes, and controls an emission state of the backlight to turn on the backlight of emission color corresponding to a display pattern of an arbitrary first subframe from some timing in the first subframe to some timing in a second subframe immediately after the first subframe. | 03-12-2009 |
| 20090061559 | MANUFACTURE METHOD FOR ZnO-CONTAINING COMPOUND SEMICONDUCTOR LAYER - A manufacture method for a ZnO-containing compound semiconductor layer has the steps of: (a) preparing a substrate; and (b) growing a ZnO-containing semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as surfactant. There is provided the manufacture method for the ZnO-containing compound semiconductor layer with improved flatness. | 03-05-2009 |
| 20090058794 | LIQUID CRYSTAL DISPLAY DEVICE WITH IMPROVED DISPLAY LUMINANCE - A liquid crystal display device has: a liquid crystal display unit including a plurality of common electrodes to be sequentially applied with a drive voltage and segment electrodes for segment display, facing each common electrode, and a plurality of display areas divided for one or more common electrodes; a backlight including a multicolor light source provided for each display area; and a drive unit for performing field sequential driving of multiplex driving by scanning the plurality of common electrodes in such a manner that after all common electrodes in one display area are scanned, common electrodes in the next display area start being scanned, and by synchronizing scanning each common electrode with an emission operation of the multicolor light source in each display area. | 03-05-2009 |
| 20090057673 | Pixel structure of solid-state image sensor - To eliminate uneven distribution of electrons caused by variation in threshold voltages of gates for distributing electrons and to have sensitivity in a long wavelength in a pixel structure of a solid-state image sensor of a charge sorting method, the structure has: a photodiode that generates electrons by photoelectric conversion; a plurality of charge-storage sections that store electrons generated in the photodiode; and a gate structure that is arranged between the photodiode and the charge-storage sections and controls transfer of electrons generated in the photodiode to the plurality of charge-storage sections, in which the gate structure is made up of plural stages of gates, and the plural stages of gates at least have: a front stage gate that is arranged adjacent to the photodiode and controls readout of electrons generated in the photodiode; and a rear stage gate that is arranged adjacent to the plurality of charge-storage sections on the rear stage of the front stage gate and performs control of distributing electrons read out by readout control of the front stage gate to the plurality of charge-storage sections. | 03-05-2009 |
| 20090033828 | MONOCHROMATIC LIQUID CRYSTAL DISPLAY WITH HIGH CONTRAST RATIO - An STN liquid crystal display, wherein a twist angle of liquid crystal molecules of the liquid crystal layer is 155° to 210°, and a first angle between a polarizing axis direction of the first polarizer and an alignment direction of liquid crystal molecules of the liquid crystal layer in contact with the first transparent substrate and a second angle between a polarizing axis direction of the second polarizer and an alignment direction of liquid crystal molecules of the liquid crystal layer in contact with the second transparent substrate are each larger than 0° and smaller than 90°, and a sum of the first and second angles is 90°±7°. The STN liquid crystal display is provided having a high contrast ratio and good characteristics of viewing angle. | 02-05-2009 |
| 20090026472 | Silicon LED package having horn and contact edge with (111) planes | 01-29-2009 |
| 20090008660 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 01-08-2009 |
| 20080315427 | SUBSTRATE BONDING METHOD AND SEMICONDUCTOR DEVICE - (a) A first Sn absorption layer ( | 12-25-2008 |
| 20080304001 | MONOCHROMATIC LIQUID CRYSTAL DISPLAY WITH HIGH CONTRAST - An STN liquid crystal display cell includes a liquid crystal layer sandwiched between a first and second transparent substrate, is outwardly provided with a first and second polarizers, and a monochromatic back light. Twist angle of the liquid crystal layer is 95° to 170° or 200° to 280°; a first angle between alignment direction of liquid crystal molecules contacting the first transparent substrate and polarization direction of the first polarizer and a second angle between an alignment direction of liquid crystal molecules contacting the second transparent substrate and polarization direction of the second polarizer are each larger than 0° and smaller than 90°; and sum of the first and second angles is 90°±7°. | 12-11-2008 |
| 20080303984 | LIQUID CRYSTAL DISPLAY DEVICE CAPABLE OF LOW TEMPERATURE USE - A liquid crystal display device comprises: a liquid crystal display element comprising a pair of glass substrates facing to each other, transparent electrode patterns, each transparent electrode pattern being formed on a facing surface of each one of said pair of glass substrates film structures, each film structure including an oriented film and being formed on each one of said pair of glass substrates with covering said transparent electrode, and a liquid crystal layer held between the pair of glass substrates; and a light source that can radiate near infrared rays to said liquid crystal display element, and wherein at least one of said liquid crystal layer and said film structures include near infrared ray absorption material. A response time of the liquid crystal display device can be improved at a low temperature. | 12-11-2008 |
| 20080290439 | Optical device - An optical device includes a metal film that has a first plane and a second plane electrically connected to the first plane. For example, the second plane is integrally formed with the first plane. The second plane is arranged at an obtuse angle θ (90°<θ<180°) with respect to the first plane. An optical semiconductor chip is mounted on the second plane of the metal film, and a light-transmitting sealing material seals the optical semiconductor chip. The light-transmitting sealing material has the metal film provided on a surface thereof. | 11-27-2008 |
| 20080278643 | LIQUID CRYSTAL DISPLAY APPARATUS - A mono domain vertical alignment type liquid crystal display apparatus to be multiplex driven is provided whose display uniformity at a large pretilt angle (near 90°) is improved. Waveform A is applied to a liquid crystal cell of a mono domain vertical alignment type, the waveform A having a duty not lower than 4 and a frame frequency of f. The frame frequency f is determined from a pretilt angle θp, and is a frequency not lower than 60 Hz at a pretilt angle of 88.5°≦p<89.6° or a frequency not lower than [120×(θp−89.6)+60] Hz at a pretilt angle of 89.6°≦θp≦89.9°. | 11-13-2008 |
| 20080271820 | ANTIRUST TREATMENT METHOD FOR AN ALUMINUM DIE-CAST PART FOR VEHICULAR LIGHTING FIXTURE, AND AN ALUMINUM DIE-CAST PART FOR VEHICULAR LIGHTING FIXTURE - An aluminum alloy-made part for a vehicular lighting fixture cast by the die-casting method and containing at least silicon is heated, whereby the silicon in the surface layer of the aluminum alloy-made part for a vehicular lighting fixture is oxidized to form a silicon oxide layer. By the heating treatment, the aluminum alloy-made part can achieve an antirust effect. | 11-06-2008 |
| 20080268616 | SEMICONDUCTOR DEVICE, ITS MANUFACTURE METHOD AND ELECTRONIC COMPONENT UNIT - A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture. | 10-30-2008 |
| 20080259644 | SURFACE ILLUMINANT EQUIPMENT - A plurality of convex strip portions are formed on a front surface (or a back surface) of a light guiding plate, extending in a direction from a light incidence plane to an opposite side surface. A concave portion is formed on a side surface of each convex strip portion. An inner wall of the concave portion is formed from at least two flat planes inclined with respect to three axial directions orthogonal to each other (X, Y and Z axial directions), respectively. Thereby, damage to the surface illuminant equipment such as a light guiding plate due to the interference between a back surface and units disposed on the back surface of the light guiding plate is prevented, while preventing a linear part with relatively low luminance from being viewed from the front surface of the light guiding plate. | 10-23-2008 |
| 20080258142 | Semiconductor device, its manufacture method and template substrate - The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. | 10-23-2008 |
| 20080217640 | Semiconductor Light emitting device, LED package using the same, and method for fabricating the same - A semiconductor light emitting device is provided which can prevent the reflectance of a metal film from deteriorating due to heat aging and can prevent wire bonding performance of the semiconductor light emitting element from deteriorating due to the diffusion of Ni contained in a Ni barrier metal layer to the reflection layer during die-bonding of the semiconductor light emitting element. The semiconductor light emitting device includes a metal film formed on a substrate and a semiconductor light emitting element. The metal film includes a barrier metal layer configured to prevent a predetermined material from being diffused into the substrate, a metal layer formed on the barrier metal layer; and a reflection layer formed on the metal layer. The reflection layer is configured to reflect light emitted from the semiconductor light emitting element, and the metal layer is made of Ti or Pd. | 09-11-2008 |
