| 20110129983 | METHOD FOR FABRICATING A DUAL-ORIENTATION GROUP-IV SEMICONDUCTOR SUBSTRATE - The present invention relates to method for fabricating a dual-orientation group-IV semiconductor substrate and comprises in addition to performing a masked amorphization on a DSB-like substrate only in first lateral regions of the surface layer, and a solid-phase epitaxial regrowth of the surface layer in only the first lateral regions so as to establish their (100)-orientation. Subsequently, a cover layer on the surface layer is fabricated, followed by fabricating isolation regions, which laterally separate (1 1θ)-oriented first lateral regions and (100)-oriented second lateral regions from each other. Then the cover layer is removed in a selective manner with respect to the isolation regions so as to uncover the surface layer in the first and second lateral regions and a refilling of the first and second lateral regions between the isolation regions is performed using epitaxy. | 06-02-2011 |
