SPTS TECHNOLOGIES LIMITED Patent applications |
Patent application number | Title | Published |
20150102011 | PLASMA ETCHING APPARATUS - A plasma etching apparatus includes first, second and third chambers, and a plasma generation device. An inner cross-sectional area and shape of the second chamber interior substantially corresponds to the upper surface of a substrate, and a substrate support is disposed so that, in use, the substrate is substantially in register with the interior of the second chamber, and the upper surface of the substrate is positioned at a distance of 80 mm or less from the interface between the second and third chambers. | 04-16-2015 |
20140352889 | APPARATUS FOR PROCESSING A SEMICONDUCTOR WORKPIECE - An apparatus for processing a semiconductor workpiece includes a first chamber having a first plasma production source and a first gas supply for introducing a supply of gas into the first chamber, a second chamber having a second plasma production source and a second gas supply for introducing a supply of gas into the second chamber, a workpiece support positioned in the second chamber, and a plurality of gas flow pathway defining elements for defining a gas flow pathway in the vicinity of the workpiece when positioned on the workpiece support. The gas flow path defining elements include at least one wafer edge region protection element for protecting the edge of the wafer and/or a region outwardly circumjacent to the edge of the wafer, and at least one auxiliary element spaced apart from the wafer edge region protection element to define the gas flow pathway. | 12-04-2014 |
20140174658 | ETCHING APPARATUS AND METHODS - A method is for etching the whole width of a substrate to expose buried features. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed. | 06-26-2014 |
20140113439 | METHOD OF DEPOSITING AN AMORPHOUS SILICON FILM - A method is for depositing in a chamber an amorphous silicon layer on a surface of a semiconducting or insulating substrate. In the method, the surface is pretreated with a NH | 04-24-2014 |
20140097153 | METHOD OF PLASMA ETCHING - a method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions. | 04-10-2014 |
20140045340 | METHOD AND APPARATUS FOR PROCESSING A SEMICONDUCTOR WORKPIECE - A method of processing a semiconductor workpiece includes placing a back surface of the workpiece on a workpiece support in a chamber so that the front surface of the workpiece faces into the chamber for processing, and the back surface is in fluid communication with a back region having an associated back gas pressure. The method further includes performing a workpiece processing step at a first chamber pressure P | 02-13-2014 |
20130288486 | METHOD OF DEPOSITING SILICONE DIOXIDE FILMS - The invention relates to a method of depositing silicon dioxide films using plasma enhanced chemical vapour deposition (PECVD) and more particularly using tetraethyl orthosilicate (TEOS). The process can be carried out at standard temperatures and also at low temperatures which is useful for manufacturing wafers with through silicon vias. | 10-31-2013 |
20130186857 | POSITIVE DISPLACEMENT PUMPING CHAMBER - A method is for processing a substrate. The method includes placing the substrate in a process volume and introducing a process gas or vapour into the process volume and/or subsequently removing gas or vapour from the volume. The step of introducing and/or removing the gas is at least partially performed by moving a movable wall to change the process volume in an appropriate sense. | 07-25-2013 |
20130138385 | MASS FLOW CONTROL MONITORING - A method of monitoring a Mass Flow Controller (MFC) connected to a pressure chamber for supplying gas to the chamber, which is an unpumped condition, includes cyclically switching the MFC to create successive fill cycles for a test period and measuring the chamber pressure at intervals during the test period. The method is characterised in that the total switch time of the MFC is at least 10% of the fill cycle and in that the method includes obtaining the average of the pressure measurements and comparing them with historical data to determine whether or not the MFC is functioning properly. | 05-30-2013 |
20130137195 | ETCHING APPARATUS AND METHODS - A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed. | 05-30-2013 |
20130042812 | COMPOSITE SHIELDING - A composite shield assembly is for use in deposition apparatus defining a work piece location. The assembly includes a first shield element for position circumjacent the work piece location and a second shield element for extending around and carrying the first element. The thermal conductivity of the first element is greater than that of the second element, and the elements are arranged for intimate thermal contact. | 02-21-2013 |
20120325649 | METHOD OF SUPPORTING A WORKPIECE DURING PHYSICAL VAPOUR DEPOSITION - Methods and related apparatus support a work piece during a physical vapour deposition. An aluminium support having a support surface coated with a heat absorbent coating is provided. The support is cooled to around 100° C. and a PVD process is performed such that, with cooling, the work piece temperature is between 350° C. and 450° C. The coating is inert and/or ultra-high voltage compatible. | 12-27-2012 |
20120208363 | METHODS OF DEPOSITING ALUMINIUM LAYERS - A method of depositing an aluminium film on a substrate includes placing the substrate on a support, depositing a first layer of aluminium onto the substrate with the substrate in an unclamped condition, clamping the substrate to the support and depositing a second layer of aluminium continuous with the first layer. The second layer is thicker than the first layer and the second layer is deposited at a substrate temperature of less than about 22° C. | 08-16-2012 |