| Sophia School Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20110169025 | SEMICONDUCTOR OPTICAL ELEMENT ARRAY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers. | 07-14-2011 |
| 20100252836 | GROUP-III NITRIDE STRUCTURE AND METHOD FOR PRODUCING A GROUP-III NITRIDE STRUCTURE - A group-III nitride structure includes a substrate | 10-07-2010 |
| 20100193910 | III NITRIDE STRUCTURE AND METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR FINE COLUMNAR CRYSTAL - A III nitride structure includes a film | 08-05-2010 |
| 20100040103 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. | 02-18-2010 |
| 20080298415 | SEMICONDUCTOR DEVICE - A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Be | 12-04-2008 |
| 20080247434 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element. | 10-09-2008 |
