SOL VOLTAICS AB Patent applications |
Patent application number | Title | Published |
20140175372 | Recessed Contact to Semiconductor Nanowires - A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. | 06-26-2014 |
20120199187 | NANOWIRE TUNNEL DIODE AND METHOD FOR MAKING THE SAME - The present invention provides a tunnel diode and a method for manufacturing thereof. The tunnel diode comprises a p-doped semiconductor region and an n-doped semiconductor region forming a pn-junction at least partly within a nanowire where semiconductor materials on different sides of the pn-junction are different such that a heterojuction is formed. The materials of the nanowire may be compound semiconductor materials. The heterojunction tunnel diode can be of type-I (Straddling gap), type-II (Staggered gap) or type-III (Broken gap). | 08-09-2012 |
20120032148 | MULTI-JUNCTION PHOTOVOLTAIC CELL WITH NANOWIRES - A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate ( | 02-09-2012 |