| SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES - SOFRADIR Patent applications |
| Patent application number | Title | Published |
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| 20120132789 | DETECTION CIRCUIT WITH CORRELATED DOUBLE SAMPLING WITH IMPROVED ANTI-BLOOMING CIRCUIT - The detection circuit with correlated double sampling comprises two transimpedance amplifiers connected by means of a sampling capacitor. A photodiode is connected to the input of the first transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and output of the first transimpedance amplifier. The anti-blooming circuit comprises means for comparing the output voltage of the first transimpedance amplifier with a setpoint voltage defined by means of the output voltage of the second transimpedance amplifier. The means for comparing are connected to means for applying a feedback current to the input of the first transimpedance amplifier when the difference between the output voltage and the setpoint voltage reaches a limit value. | 05-31-2012 |
| 20120126101 | DETECTION CIRCUIT WITH ANTI-BLOOMING CIRCUIT - The detection circuit comprises a photodiode connected to a readout circuitry. The photodiode and readout circuitry are connected by means of a transistor arranged to operate as a closed switch when the readout circuitry biases the photodiode in a predefined range and to operate as an open switch in the other cases. | 05-24-2012 |
| 20110278462 | METHOD FOR PUTTING A COOLED INFRARED DETECTOR INTO OPERATION - In an infrared detector provided with a photodiode, when the temperature of the photodiode is lowered to its operating temperature, the photodiode is forward biased. During forward biasing of the photodiode, injection of a majority carrier current takes place through the photodiode. The majority carriers mask a part of the defects of the photodiode. The acquisition phase is then performed by reverse biasing the photodiode. | 11-17-2011 |
| 20110203516 | METHOD FOR PRODUCING A CRYSTALLIZED SEMICONDUCTOR MATERIAL - A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling. Also including: increasing, within the charge, proportion of one constituent beyond the stoichiometric proportions of the material, thereby defining an excess of the one constituent; subjecting the entire sealed ampoule to a temperature higher than or equal to fusion temperature of the material; subjecting the ampoule to a low temperature gradient and to a gradual drop in temperature, to induce crystallization of the resulting material in liquid form, in stoichiometric proportion; subjecting part of the ampoule where the crystallized material is not present, to a significant drop in temperature modifying vapor pressure state of the excess to a saturated vapor state; and cooling the whole assembly down to ambient temperature. | 08-25-2011 |
| 20110102229 | ANALOG-TO-DIGITAL CONVERTER ON TWO BITS WITH SUCCESSIVE APPROXIMATIONS - The analog-to-digital converter comprises a first stage in which a voltage to be converted is applied to the input of a first comparator. The first comparator delivers a first digital result representative of the comparison between the voltage to be converted and the reference voltage on a first digital output. The first digital output is connected to means for calculating a first intermediate voltage. A second comparator compares the first intermediate voltage with the reference voltage and delivers a second digital result on a second digital output terminal. The digital output terminal is connected to second means for calculating a residual voltage according to the voltage to be converted, the first and second voltages and the first and second digital results. | 05-05-2011 |
| 20110068860 | DETECTION CIRCUIT WITH IMPROVED ANTI-BLOOMING CIRCUIT - The detection circuit comprises a photodiode connected to an input of a capacitive transimpedance amplifier. The circuit comprises an anti-blooming circuit connected between the input and an output of the capacitive trans-impedance amplifier. The anti-blooming circuit comprises a field effect transistor connected between the input and output of the capacitive trans-impedance amplifier. The transistor is of pMOS type when the input of the capacitive transimpedance amplifier is connected to a cathode of the photodiode. The transistor is of nMOS type when the input of the capacitive transimpedance amplifier is connected to an anode of the photodiode. | 03-24-2011 |
| 20100259291 | DEVICE FOR CHARACTERIZING THE ELECTRO-OPTICAL PERFORMANCE OF A SEMICONDUCTOR COMPONENT - A device for characterizing the electro-optical performance of a semiconductor component includes a chamber containing a controlled atmosphere; a measuring head equipped with conductive probes for contacting the electrical interfaces of said component and connected to a data processing system in order to determine said electro-optical performance; and a staging fixture support to accommodate said component(s), the staging fixture being capable of being cooled and being moved in an upward and downward translational movement to bring the electrical interfaces of said component(s) into contact with the tip of the measuring probes of the measuring head. The staging fixture has bumps and the components are positioned in contact with these and the staging fixture accommodates, in the area of each of these bumps, two positioning grids which are capable of sliding relative to each other and cooperating with each other to define pockets suitable for accommodating the component(s) to be characterized. | 10-14-2010 |
| 20100193667 | ACQUISITION CIRCUIT COMPRISING A BUFFER CAPACITOR - The acquisition circuit comprises a second and third electronic switch connected in series between a photodetector and a first input terminal of an amplifier. A reference voltage is applied to a second input terminal of the amplifier, the reference voltage being applied between the photodetector and the second electronic switch by means of a fourth electronic switch. An integration capacitor and a first electronic switch are connected in parallel between the first input terminal and an output terminal of the amplifier. A buffer capacitor is connected between a common terminal of the second and third electronic switches and a secondary voltage. The electrical capacitance of the buffer capacitor is at least equal to that of the integration capacitor. | 08-05-2010 |
| 20100090681 | DEVICE AND METHOD FOR READING ELECTRIC CURRENTS RESULTING FROM AN ELECTROMAGNETIC SIGNAL DETECTOR - A device for reading electric currents including a capacitive element to integrate the current, the terminals of the capacitive element being connected to the mass and to an output branch of the device respectively, and a differential pair including: a first transistor mounted between the input branch of the input stage and the capacitive element, the transistor being controlled by a polarized impulse voltage, capable of putting the first transistor alternately into the off state and then into the on state; and a second transistor mounted between the input branch of the input stage and a potential other than that of the capacitive element, said transistor also being controlled by a polarized impulse voltage, capable of putting the second transistor alternately into the off state and then into the on state, wherein the second transistor is mounted in phase opposition relative to the first transistor. | 04-15-2010 |
| 20100052649 | DEVICE FOR READING ELECTRONIC CHARGES AND DETECTOR COMPRISING SUCH DEVICES - The invention relates to a device for reading electronic charges, comprising an input for receiving the electronic charges, at least one capacitor for storing the electronic charges and at least one circuit based on MOS transistors, whereof the maximum operating voltage determines the maximum voltage at the terminals of the at least one capacitor ( | 03-04-2010 |
| 20090321013 | METHOD FOR PRODUCING AN ARRAY FOR DETECTING ELECTROMAGNETIC RADIATION, ESPECIALLY INFRARED RADIATION - This method for producing an array for detecting electromagnetic radiation comprises a plurality of elementary detection modules | 12-31-2009 |
| 20090004760 | METHOD FOR PRODUCING A MATRIX FOR DETECTING ELECTROMAGNETIC RADIATION AND METHOD FOR REPLACING AN ELEMENTARY MODULE OF SUCH A DETECTION MATRIX - A method for producing a matrix of electromagnetic radiation detectors made up of a plurality of elementary detection modules mounted on an interconnection substrate. The method includes depositing on the interconnection substrate a predefined number of quantities of solder or hybridization material, intended to constitute hybridization bumps for the elementary modules, in at least a first array for the nominal hybridization, and at least one second array, with the deposits of solder or hybridization material of the second array being lower in volume than those of the first array, depositing a liquid flux on the interconnection substrate, mounting the elementary modules to be hybridized on the interconnection substrate, and raising the temperature of a chamber in which the various elements to be hybridized are positioned until reaching at least the melting point of the solder or hybridization material to join the modules and interconnection substrate together by reflow effect. | 01-01-2009 |
