| SIONYX, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20130099103 | RESPONSE-ENHANCED MONOLITHIC-HYBRID PIXEL - A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate. | 04-25-2013 |
| 20130062522 | THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS - 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface. | 03-14-2013 |
| 20120326008 | PHOTODETECTING IMAGER DEVICES HAVING CORRELATED DOUBLE SAMPLING AND ASSOCIATED METHODS - Transistor pixel devices, imagers, and associated methods are provided. In one aspect, a transistor pixel device includes a photodiode coupled to a floating diffusion region (FD), a storage node (SN), and a power supply, wherein the FD is coupled between the photodiode and the power supply. The device also includes a first global transfer transistor coupled between the photodiode and the FD for gating between the photodiode and the FD and a second global transfer transistor coupled between the FD and the SN for gating between the FD and the SN. A global reset select transistor is coupled between the FD and the power supply, wherein an open state of the global reset select transistor prevents accumulation of electrical charge at the photodiodes. A source follower transistor is coupled to the FD and to the power supply, where the source follower is operable to receive electrical signal from the FD. | 12-27-2012 |
| 20120292729 | Optoelectronic Devices Having Deep Level Defects and Associated Methods - Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm. | 11-22-2012 |
| 20120241788 | Textured Light Emitting Devices and Methods of Making the Same - Light emitting devices having a textured light emission surface and methods are disclosed. A light emitting device can include a semiconductor substrate having a light emission surface, a semiconductive junction and a textured region formed via laser irradiation on the light emission surface. During us of the light emitting device, light generated by the semiconductive junction can primarily emit through the light emission surface having the textured region. | 09-27-2012 |
| 20120146172 | High Speed Photosensitive Devices and Associated Methods - High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm. | 06-14-2012 |
| 20120111396 | Photovoltaic Devices and Associated Methods - A method for making a semiconductor device includes providing a semiconductor material and doping at least a portion of the semiconductor material to form at least one doped region. A portion of the semiconductor material is removed with a pulsed laser from at least one first region to form at least one adjacent second region. | 05-10-2012 |
| 20120068289 | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods - Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer. | 03-22-2012 |
| 20110272583 | Response-Enhanced Monolithic-Hybrid Pixel - A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate. | 11-10-2011 |
| 20110265875 | COPPER AND INDIUM BASED PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS - Optoelectronic devices having enhanced conversion efficiencies and associated methods are provided. In one aspect, for example, a method of making an optoelectronic device can include applying an absorption layer onto a support substrate, the absorption layer including a material such as CIGS, CIG, CI, CZT, CdTe, and combinations thereof. Additional steps include providing a element-rich environment in proximity to the absorption layer, and irradiating at least a portion of the absorption layer with laser radiation through the element-rich environment thereby incorporating the element into the absorption layer. | 11-03-2011 |
| 20110220971 | PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS - Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction. | 09-15-2011 |
| 20110042773 | HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME - The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor. | 02-24-2011 |
| 20100244174 | HIGHLY-DEPLETED LASER DOPED SEMICONDUCTOR VOLUME - A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations. | 09-30-2010 |
| 20100052088 | HIGH SENSITIVITY PHOTODETECTORS, IMAGING ARRAYS, AND HIGH EFFICIENCY PHOTOVOLTAIC DEVICES PRODUCED USING ION IMPLANTATION AND FEMTOSECOND LASER IRRADIATION - The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention. | 03-04-2010 |
| 20100038542 | Wideband Semiconducting Light Detector - A detector incorporating a laser-doped element that is favorably absorbing to at least a portion of the electromagnetic spectrum, for example in the infra-red range, is used in a light detector article. Readout circuits permitting a detector to operate in a substantial range of the electromagnetic spectrum, including the visual and infra-red range, enable day and night imaging in some embodiments. Configurations for making the detectors are also disclosed. | 02-18-2010 |
| 20090261464 | Getter Formed By Laser-Treatment and Methods of Making Same - The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof. | 10-22-2009 |
| 20090250780 | HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME - The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side and an architecture that enables the laser step to be the final step or a late step in the fabrication process. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor. | 10-08-2009 |
| 20090219403 | COMPACT PASSIVE LOW-LIGHT IMAGING APPARATUS - A passive portable imaging system for generating a viewable image of a darkened or low-light environment including a sensor made of laser-treated semiconductor material that is sensitive to low-light radiation, in some cases radiation at wavelengths longer than those of traditional visible light imager ranges. The imaging system can be incorporated into a personal electronic product such as a cellular phone or similar compact apparatus, and can provide security to a user who moves in or wishes to view a dark area and doesn't have a light source to illuminate the dark area. | 09-03-2009 |
