| SINO-AMERICAN SILICON PRODUCTS INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120112158 | EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF - The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate. | 05-10-2012 |
| 20120015143 | Epitaxial substrate having nano-rugged surface and fabrication thereof - The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, the crystalline substrate has an epitaxial surface which is nano-rugged and non-patterned. The epitaxial substrate according to the invention thereon benefits a compound semiconductor material in growth of epitaxy films with excellent quality. Moreover, the fabrication of the epitaxial substrate according to the invention has advantages of low cost and rapid production. | 01-19-2012 |
| 20110303143 | METHOD OF MANUFACTURING CRYSTALLINE SILICON INGOT - An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted. | 12-15-2011 |
| 20110003420 | Fabrication method of gallium nitride-based compound semiconductor - The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively. | 01-06-2011 |
| 20080233671 | Method of fabricating GaN LED - A light emitting diode (LED) is made. The LED had a LiAlO | 09-25-2008 |
| 20080233415 | Structure of LiAlO2 substrate having ZnO buffer layer - A lithium aluminum oxide (LiAlO | 09-25-2008 |
| 20080231172 | Light emitting device using phosphor powder - The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO | 09-25-2008 |
