SILICONIX TECHNOLOGY C.V. Patent applications |
Patent application number | Title | Published |
20140042459 | SILICON CARBIDE SCHOTTKY DIODE - A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body. | 02-13-2014 |
20110278591 | POWER SEMICONDUCTOR SWITCH - A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof. | 11-17-2011 |
20080286968 | SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES - A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap. | 11-20-2008 |