SILICONIX TECHNOLOGY C.V.

Patent application number	Title	Published
SILICONIX TECHNOLOGY C.V. Patent applications
20110278591	POWER SEMICONDUCTOR SWITCH - A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.	11-17-2011
20080286968	SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES - A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.	11-20-2008