Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
SICED ELECTRONICS DEVELOPMENT GMBH
Erlangen, DE
| SICED ELECTRONICS DEVELOPMENT GMBH Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20120091471 | LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES - A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 10 | 04-19-2012 |
| 20090114924 | LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES - A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×10 | 05-07-2009 |
| 20080217627 | SiC-PN Power Diode - An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes. | 09-11-2008 |