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SI-NANO INC.

SI-NANO INC. Patent applications
Patent application numberTitlePublished
20110272771THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THIN FILM PHOTOELECTRIC CONVERSION DEVICE - A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided. A plasmon resonance phenomenon, which enhances a photo-induced electric field, is caused in a wide range of light, by a metal nanostructure which is formed by annealing a substrate on which a first metal thin film layer composed of a first metal and a second metal thin film layer composed of a second metal which is partially overlapped onto the first metal thin film layer are laminated, and in which a periodic structure, wherein a number of first convex parts successively lie with a pitch of from one-tenth of a wavelength of an incident light to a wavelength equal to or shorter than the wavelength of the incident light in a planar direction along the substrate, is formed on the surface of the substrate; and a random structure, wherein a distance between any pair of a number of second convex parts formed at random positions on the substrate, or a distance between a second convex part and a first convex part is shorter than 100 nm, is formed on the substrate in a position within a region of the periodic structure or in a position adjacent to the region of the periodic structure, and as a result, high sensitivity photo-induced current is generated.11-10-2011
20110215434THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THIN-FILM PHOTOELECTRIC CONVERSION DEVICE - Provided are a thin-film photoelectric conversion device of which thickness can be reduced to several tens nanometers (nm) or below, and a method of manufacturing the thin-film photoelectric conversion device.09-08-2011