| SHINKAWA LTD Patent applications |
| Patent application number | Title | Published |
|---|
| 20120055976 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WIRE BONDING APPARATUS - A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of H | 03-08-2012 |
| 20120018491 | ULTRASONIC HORN - An ultrasonic horn used in, for instance, a wire bonding apparatus and formed with mounting flanges, including a slit and a cross-sectional shape varying portion; the slit being on the central axis in the horn's longitudinal direction and extending fore and aft relative to the center of the mounting flanges, the length of the slit(s) being equal to or greater than the width direction of a flange region that is between the opposing flanges, and at least a part of the cross-sectional shape varying portion being on the outer surface of the horn at a slit region in which the slit is formed. The stress center point in the cross-section of the ultrasonic horn at the flange region is positioned more to the inside than a straight line joining the stress center points in the cross-sections of the ultrasonic horn at the front and rear end portions of the slit. | 01-26-2012 |
| 20120018490 | ULTRASONIC HORN - An ultrasonic horn used in, for instance, a wire bonding apparatus and formed with mounting flanges, including a slit and a cross-sectional shape varying portion; the slit being on the central axis in the horn's longitudinal direction and extending fore and aft relative to the center of the mounting flanges, the length of the slit(s) being equal to or greater than the width direction of a flange region that is between the opposing flanges, and at least a part of the cross-sectional shape varying portion being on the outer surface of the horn at a slit region in which the slit is formed. The stress center point in the cross-section of the ultrasonic horn at the flange region is positioned more to the inside than a straight line joining the stress center points in the cross-sections of the ultrasonic horn at the front and rear end portions of the slit. | 01-26-2012 |
| 20120018489 | ULTRASONIC HORN - An ultrasonic horn used in, for instance, a wire bonding apparatus and formed with mounting flanges, including a slit and a cross-sectional shape varying portion; the slit being on the central axis in the horn's longitudinal direction and extending fore and aft relative to the center of the mounting flanges, the length of the slit(s) being equal to or greater than the width direction of a flange region that is between the opposing flanges, and at least a part of the cross-sectional shape varying portion being on the outer surface of the horn at a slit region in which the slit is formed. The stress center point in the cross-section of the ultrasonic horn at the flange region is positioned more to the inside than a straight line joining the stress center points in the cross-sections of the ultrasonic horn at the front and rear end portions of the slit. | 01-26-2012 |
| 20110315743 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BONDING APPARATUS - In a first bonding step of bonding an initial ball to a pad surface, the initial ball is applied by ultrasonic vibration while in pressure contact with the pad surface and a capillary undergoes a scrubbing motion to be rotated spirally. This allows a deformation area of the initial ball to be reduced, whereby the accuracy of bonding can be improved. In a second bonding step of bonding a bonding wire to a lead surface, the capillary and the bonding wire are applied by ultrasonic vibration while in pressure contact with the lead surface and the capillary undergoes a scrubbing motion to be rotated spirally. This allows the bonding wire bonded to the lead surface to be cut reliably. | 12-29-2011 |
| 20110278349 | WIRE BONDING APPARATUS AND WIRE BONDING METHOD - Provided is a wire bonding apparatus including: a wire cutting unit configured to cut a wire by bonding the wire using a capillary and then moving the capillary and a first clamper upward while the first clamper remains closed; and a wire extending unit configured to extend a tail wire from a tip end of the capillary by moving the capillary upward and then moving the capillary and the first clamper upward in a state in which the first clamper is opened and a second clamper is closed. The wire bonding apparatus having such a structure effectively prevents the wire from falling out and bending. | 11-17-2011 |
| 20110226838 | BONDING METHOD, BONDING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE UNSING THE SAME - Provided is a bonding apparatus capable of forming even loops at high speed. According to a bonding apparatus | 09-22-2011 |
| 20110180590 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WIRE BONDING APPARATUS - A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of H | 07-28-2011 |
| 20110155789 | BONDING APPARATUS - A bonding apparatus includes an ultrasonic horn configured to vibrate longitudinally in resonance with the vibration of an ultrasonic vibrator; a capillary attached at an anti-node of the vibration of the ultrasonic horn; a flange provided at a node of the vibration of the ultrasonic horn; a bonding arm; a load sensor attached between the center of rotation of the bonding arm and a flange mounting surface; and a vibration load detection unit for extracting a signal obtained by causing a signal that is detected with the load sensor to pass a signal within a frequency range around the vibrational frequency of the ultrasonic vibrator through a band-pass filter, whereby the bonding apparatus can detect the vibration load at a tip end of the capillary in the direction along the central axis of the ultrasonic horn with a simple structure. | 06-30-2011 |
| 20110146408 | METHOD AND APPARATUS FOR PASS/FAIL DETERMINATION OF BONDING AND BONDING APPARATUS - An apparatus for pass/fail determination of bonding used in a bonding apparatus, includes: an ultrasonic horn configured to vibrate longitudinally in resonance with the vibration of an ultrasonic vibrator; a capillary attached at an anti-node of the vibration of the ultrasonic horn; a flange provided at a node of the vibration of the ultrasonic horn; a bonding arm; and a load sensor attached between the center of rotation of the bonding arm and a flange mounting surface in an offset manner from a longitudinal central axis of the ultrasonic horn, in which a load on the capillary in the direction toward and away from the bonding target is continuously detected by using the load sensor during bonding operation and the maximum value of the detected load is defined as an impact load to determine pass/fail of the bonding based on the impact load, thereby allowing a mid-bonding pass/fail determination. | 06-23-2011 |
| 20110128369 | Pressure-Bonded Ball Diameter Detecting Apparatus and Pressure-Bonded Ball Diameter Detecting Method - Improving detectability of a diameter of a pressure-bonded ball bonded by a bonding apparatus by calculating the diameter of the pressure-bonded ball by obtaining a first tentative radius by subtracting a distance between a line representing an outline of a pad short side and a curving line representing an outline of a pressure-bonded ball from a distance between the line representing the outline of the pad short side and a bonding-control-center position of the pressure-bonded ball; obtaining a second tentative radius by subtracting a distance between a line representing an outline of a pad short side that faces toward the pad with which the first tentative radius is calculated and an outline of a pressure-bonded ball from a distance between the line representing the outline of the pad short side and a bonding-control-center position of the pressure-bonded ball; and averaging the same number of the first and the second tentative radii. | 06-02-2011 |
| 20100301101 | BONDING APPARATUS AND BONDING STAGE HEIGHT ADJUSTMENT METHOD FOR THE BONDING APPARATUS - A bonding apparatus includes: a reference plane; a bonding arm configured to be rotated about a rotation center that is arranged separately from the reference plane and to move a capillary attached at a tip end thereof obliquely toward and away from the reference plane; and an imaging device for optically detecting bonding positions on a semiconductor chip and/or a lead frame, in which an angle between an optical axis being heading for the imaging device from the reference plane and the reference plane is approximately equal to an angle between a motion trajectory of a tip end of the capillary and the reference plane, and thereby the bonding apparatus can have a wide bonding area with a simple mechanism as well as perform high-speed and high-accuracy bonding. | 12-02-2010 |
| 20100294435 | BONDING APPARATUS AND WIRE BONDING METHOD - A bonding apparatus including a chamber for maintaining an inert gas atmosphere; a first plasma torch for performing a surface treatment on pads and electrodes, the first plasma torch being attached in the chamber, to apply gas plasma to a substrate and a semiconductor chip that is placed inside the chamber; a second plasma torch for performing a surface treatment on an initial ball and/or wire at a tip end of a capillary that is positioned inside the chamber, the second plasma torch being attached in the chamber, to apply gas plasma to the initial ball and/or wire; and a bonding unit for bonding the surface-treated initial ball and/or wire to the surface-treated pads and electrodes in the chamber, thereby cleaning of the surface of the electrodes and pads as well as the wire can be effectively performed. | 11-25-2010 |
| 20100237480 | SEMICONDUCTOR DEVICE AND WIRE BONDING METHOD - A semiconductor device has a first layer pressing portion that is formed by crushing a ball neck formed by bonding an initial ball onto a first layer pad of a first layer semiconductor die and pressing the side of a wire folded onto the crushed ball neck, a first wire extended in the direction of a lead from the first layer pressing portion, and a second wire that is looped from a second layer pad of a second layer semiconductor die toward the first layer pressing portion and joined onto the second layer pad side of the first layer pressing portion. Thereby, the connection of wires is performed at a small number of times of bonding, while reducing damages caused on the semiconductor dies. | 09-23-2010 |
| 20100226745 | Die Pickup Apparatus for Picking Up Semiconductor Dies and Methods for Picking Up Semiconductor Dies - A die pickup apparatus facilitates picking up a semiconductor die in a manner such that, in a state in which a semiconductor die to be picked up is suctioned by a collet, a frontal end of a cover plate is caused to extend from a contact surface, and the cover plate is caused to slide while pushing up a dicing sheet and the semiconductor die, and subsequently a rear end of the cover plate is caused to extend from the contact surface such that an upper surface of the cover plate is substantially in parallel with the contact surface, the cover plate is caused to slide while pushing the dicing sheet and the semiconductor die with the upper surface of the cover plate such that the suction opening is opened, and the dicing sheet is suctioned into the opened suction opening, thereby separating the dicing sheet. | 09-09-2010 |
| 20100093131 | BONDING APPARATUS AND BONDING METHOD - A bonding apparatus ( | 04-15-2010 |
| 20100089980 | BONDING APPARATUS AND BONDING METHOD - A bonding apparatus ( | 04-15-2010 |
| 20090020872 | WIRE BONDING METHOD AND SEMICONDUCTOR DEVICE - In order to prevent bonded wires from being damaged during another wire bonding in a semiconductor device, there is provided a wire bonding method for wire-connecting pads on a semiconductor chip and multiple leads corresponding to the pads in a semiconductor device to be manufactured by sealing the semiconductor chip and the leads together in one block, in which bumps and are formed with an ultrasonic vibration on all of the pads on the semiconductor chip and the leads included in the one block, and then wires are provided, with no ultrasonic vibration, for connection between the bumps and on the pads and the leads. | 01-22-2009 |
