| SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20120114972 | Composite Nanometal Paste of Two-Metallic-Component Type, Bonding Method, and Electronic Part - Provided is a composite nanometal paste, whose layer, when sintered in an inert gas under no load, gives a metal layer that is equal or superior in electrical conductivity and thermal conductivity to conventional lead-rich solders. The composite nanometal paste contains, as metal components, composite metal nanoparticles comprising metal cores with an average particle diameter of d (nm) and an organic coating layer formed around the circumference, and metal filler particles having an average particle diameter of D (nm), and satisfies the first relation d| 05-10-2012 | |
| 20110241611 | BATTERY CHARGER, BATTERY CHARGING CIRCUITS, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES - Provided is a battery charging technique by which high efficiency of the battery charging can be always controlled no matter how the power consumption of the battery is changed. In a battery charger, a charging control circuit holds a charge/non-charge state of a battery during an arbitrary period of time in order to prevent the unbalance of phase voltages due to occurrence of transition between the charge/non-charge states during a short period of time and the reduction of the efficiency of the battery charging. Further, zero-crossing erroneous detection in a phase voltage of the output of a three-phase alternating-current generator due to noises is prevented. | 10-06-2011 |
| 20110241610 | BATTERY CHARGER, BATTERY CHARGING CIRCUITS, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES - There is provided a battery charging technique by which various battery charging control can be achieved even when power consumption of a battery is small. In a battery charger, in order not to turn OFF a power switch even when an ACG starting detection circuit recognizes that an output of a generator is not generated in a state in which the power consumption of the battery is small and the voltage of the battery is not dropping, a voltage of the battery in addition to phase terminal signals of a three-phase alternating-current generator is inputted to the ACG starting detection circuit, and the ACG starting detection circuit controls not to turn OFF the power switch when the output of the three-phase alternating-current generator is generated or when the voltage of the battery is equal to or higher than a predetermined voltage. | 10-06-2011 |
| 20110241068 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device which can make the generation of gate parasitic oscillations more difficult than a semiconductor device of the related art is provided. The semiconductor device includes: a drift layer which is constituted of a reference concentration layer and a low concentration layer; a gate electrode structure; a pair of source regions, a pair of base regions, and depletion-layer extension regions which are formed in the reference concentration layer below the base regions, wherein the depletion-layer extension regions are formed such that a lower surface of the depletion-layer extension region is deeper than a boundary between the low concentration layer and the reference concentration layer and projects into the low concentration layers, and a dVDS/dt-decreasing diffusion layer which contains an n-type impurity at a concentration higher than the concentration of the impurity which the reference concentration layer contains and decreases dVDS/dt when the semiconductor device is turned off is formed on a surface of the reference concentration layer. | 10-06-2011 |
| 20110198617 | ELECTRODE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC semiconductor. The semiconductor device simultaneously has improved contact resistance and surface roughness in the ohmic electrode. The semiconductor device comprises an ohmic electrode ( | 08-18-2011 |
| 20110169015 | BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device ( | 07-14-2011 |
| 20110163738 | CURRENT DETECTION CIRCUIT AND TRANSFORMER CURRENT MEASURING SYSTEM - A current detection circuit and a transformer current measurement system are offered, in which when elements and circuit, which cannot operate originally unless a transformer with small excitation inductance is used, are connected to a primary side of the transformer, even if the transformer, whose excitation inductance is large, is used, transformer current (primary current and secondary current) can be measured without deteriorating operations of the elements and circuit. | 07-07-2011 |
| 20110095398 | BIPOLAR SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME - A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in another surface of the semiconductor crystal substrate, an n-type second high-resistance region between the emitter region and the base region so as to contact the emitter region, an n-type recombination suppressing region around the second high-resistance region so as to adjoin the second high-resistance region, and a p-type low-resistance base contact region which is provided so as to adjoin the recombination suppressing region, and which contacts the base region. Each of doping concentrations of the second high-resistance region and the recombination suppressing region is equal to or lower than 1×10 | 04-28-2011 |
| 20110039382 | Semiconductor device and method for manufacturing the same - A semiconductor device including a plurality of units having identical structures, each unit includes: a drain electrode; a drift layer that includes a low concentration layer on the drain electrode and a reference concentration layer on the low concentration layer, a gate electrode on the reference concentration layer; a pair of source regions that are provided on an upper surface of the reference concentration layer and in the vicinity of both ends of the gate electrode; a pair of base regions that surround outer surfaces of the source regions; a source electrode electrically connected to the source regions and the base regions; and a pair of depletion-layer extension regions that are respectively provided under the base regions in the reference concentration region. Boundaries between the depletion-layer extension regions and the low concentration layer are positioned lower than a boundary between the reference concentration layer and the low concentration layer. | 02-17-2011 |
| 20100237825 | Battery Charging Device and Delay Angle Control Method for Battery Charging Device - A battery charging device of the present invention has a rectifier portion that is formed by switching elements, and performs advance angle/delay angle control. An advance angle/delay angle amount in the advance angle/delay angle control is determined based on a differential voltage between the voltage of a battery and a predetermined target voltage. In this case, when a determined delay angle amount exceeds a delay angle limit value, delay angle control is performed using the delay angle limit value. Moreover, the power generation amount of an alternating current generator is detected, and the delay angle amount and power generation amount are stored. If the current delay angle amount is greater than the previous delay angle amount, and the previous power generation amount is greater than the current power generation amount, then the previous delay angle amount is set as the delay angle limit value. | 09-23-2010 |
| 20100158743 | METHOD OF MANUFACTURING MAGENTIC BODY - A method of manufacturing a magnetic body in which insulating magnetic powder particles are stacked and press-molded in a molding space, and wiring is formed on a surface of the insulating magnetic powder particles solidified by press molding is provided according to the present invention. The method includes: a first step S | 06-24-2010 |
| 20090250750 | TRENCH GATE POWER MOSFET - A trench gate power MOSFET ( | 10-08-2009 |
| 20090160408 | BATTERY CHARGING DEVICE, THREE-PHASE VOLTAGE GENERATING CIRCUIT, THREE-PHASE VOLTAGE GENERATION METHOD AND DELAY ANGLE CONTROL METHOD - In the battery charging device of the present invention, a U, V, W phase voltage generating circuit detects a voltage signal of a U phase sub-coil of a three-phase alternating current generator, and generates a signal of a triangular wave that is in synchronization with the U phase. Moreover, a first triangular wave is generated in synchronization with a phase from 0° to 180° of the U phase rectangular wave, and a second triangular wave is generated in synchronization with a phase from 180° to 360° of the U phase. In addition, a V phase rectangular wave is generated in which the level is inverted at a voltage point of two thirds the peak voltage of the first triangular wave, and in which the level is inverted at a voltage point of two thirds the peak voltage of the second triangular wave, and a W phase rectangular wave is generated in which the level is inverted at a voltage point of one third the peak voltage of the first triangular wave, and in which the level is inverted at a voltage point of one third the peak voltage of the second triangular wave. | 06-25-2009 |
| 20090073728 | POWER CONVERTER AND METHOD, AND TRIANGLE WAVE GENERATING CIRCUIT - A power converter that converts an AC power outputted from a generator into a DC power and supplies it to a battery (load). The power converter includes a thyristor (switch unit) connected between an output unit of the generator and the battery (load); and a gate control unit (control unit) for generating a triangle wave voltage having a constant peak voltage corresponding to each cycle of the AC power outputted from the generator, generating a differential voltage between the voltage supplied to the load via the switch unit and a predetermined target voltage, and controlling the conductive state of the switch unit based on the triangle wave voltage and the differential voltage. | 03-19-2009 |
| 20080315301 | Trench Gate Power Semiconductor Device - A trench gate power MOSFET ( | 12-25-2008 |
