| Shin-Etsu Quartz Products Co., Ltd. Patent applications |
| Patent application number | Title | Published |
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| 20110272322 | SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME - The present invention is a method for producing a silica container having a substrate containing gaseous bubbles in its outer peripheral part and an inner layer comprised of a transparent silica glass formed on an inner surface of the substrate, wherein a powdered raw material for forming a substrate containing Li, Na, and K with the total concentration of 50 or less ppm by weight and a powdered raw material for forming an inner layer containing Ca, Sr, and Ba with the total concentration of 50 to 2000 ppm by weight are prepared; a preliminarily molded substrate is formed in a frame; a preliminarily molded inner layer is formed on an inner surface of the preliminarily molded substrate; and the preliminarily molded substrate and molded inner layer are heated from inside thereof by a discharge-heat melting method under a gas atmosphere containing a hydrogen gas or a helium gas or a gas mixture thereof with the ratio of more than 10% by volume thereby making an outer peripheral part of the preliminarily molded substrate to a sintered body and an inner peripheral part of the preliminarily molded substrate and the preliminarily molded inner layer to a fused glass body. With this, a method for producing a silica container, producible with a low cost and having a high durability and dimensional precision, and a container of this sort can be provided. | 11-10-2011 |
| 20110256330 | POWDERED SILICA, SILICA CONTAINER, AND METHOD FOR PRODUCING THEM - A method is provided for producing a silica container arranged with a substrate, having a rotational symmetry, comprised of mainly a silica, and containing gaseous bubbles at least in its peripheral part, and an inner layer, formed on an inner surface of the substrate and comprised of a transparent silica glass; wherein a powdered silica, having particle diameter of 10 to 1000 μm, containing Ca, Sr, and Ba with the total concentration of 50 to 5000 ppm by weight, and releasing hydrogen molecules with the amount of 3×10 | 10-20-2011 |
| 20110240663 | SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME - A method for producing a silica container having a rotational symmetry is provided. The method includes, forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body. | 10-06-2011 |
| 20110232847 | QUARTZ GLASS MEMBER FOR PLASMA ETCHING - Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt % or more to less than 0.1 wt %, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids. | 09-29-2011 |
| 20110192758 | SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME - A method for producing a silica container, the method including forming a preliminarily molded silica substrate to an intended shape by feeding a powdered substrate's raw material (silica particles) to an inner wall of a carbon-made outer frame having aspiration holes with rotating the outer frame, and forming the silica substrate wherein the preliminarily molded substrate is degassed by aspiration from its outer peripheral side with charging from an inner peripheral side of the preliminarily molded silica substrate a reducing gas containing more than 10% by volume of an H | 08-11-2011 |
| 20110143063 | SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME - A method for producing a silica container that includes forming a powder mixture by adding an Al compound or a crystal nucleating agent into a first powdered raw material (silica particles), preliminarily molding to an intended shape by feeding the powder mixture to an inner wall of an outer frame while rotating the outer frame having aspiration holes, forming a silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side and at the same time heated from inside the preliminarily molded article at high temperature thereby making a peripheral part of the preliminarily molded article to a sintered body while an inner part to a fused glass body, and forming a transparent silica glass layer on an inner surface of the silica substrate, wherein a second powdered raw material having a higher silica purity than the first powdered raw material is spread from inside the silica substrate and at the same time heated from the inside at high temperature. | 06-16-2011 |
| 20110120190 | METHOD FOR PRODUCING QUARTZ GLASS USING A MIXED POWDER - A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The “quartz powder” is a powder of crystalline quartz or it is a powder of glassy SiO | 05-26-2011 |
| 20110114530 | SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing a silica container, wherein the method comprises: a step of forming a preliminarily molded substrate, wherein a first powdered raw material (silica particles) is fed to an inner wall of an outer frame having aspiration holes while rotating the outer frame, a step of forming a preliminarily molded intermediate layer, wherein a second powdered raw material (silica particles) added with an aluminum compound or a crystal nucleating agent as an additive is fed to an inner wall of the preliminarily molded substrate, and a step of forming an inner layer, wherein the preliminarily molded substrate and the preliminarily molded intermediate layer are degassed by aspiration from a peripheral side with heating from an inside thereby forming a substrate and an intermediate layer, and while a third powdered raw material having a high silica purity is spread from inside the substrate having the formed intermediate layer with heating from the inside thereby forming an inner layer on an inner surface of the intermediate layer. Accordingly, a method for producing a silica container with a high dimensional precision, a high durability, and low gas release, and with a reduced energy consumption and a low production cost, by using a cheap and relatively low grade powdered silica as a main raw material, as well as the silica container thus produced are provided. | 05-19-2011 |
| 20100251770 | Process for producing silica glass product - A process for producing a transparent or opaque silica glass product including mixing a silica fine powder and a cellulose derivative and injection molding the mixture, followed by degreasing treatment and baking treatment, which is characterized in that the cellulose derivative is a cellulose derivative which causes reversible thermal gelation in an aqueous solution of at least one member selected from methyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose; in producing a transparent silica glass product, the cellulose derivative is added in water heated at a gelation temperature thereof or higher, and after cooling, the formed aqueous solution is kneaded with the silica fine powder; and in producing an opaque silica glass product, the cellulose derivative is added in a silica slurry containing a silica powder and heated at a gelation temperature of the cellulose derivative or higher. | 10-07-2010 |
| 20100186662 | CRUCIBLE HAVING A DOPED UPPER WALL PORTION AND METHOD FOR MAKING THE SAME - A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt. | 07-29-2010 |
| 20100139549 | Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal - The present invention is a quartz glass crucible | 06-10-2010 |
| 20100132609 | QUARTZ GLASS CRUCIBLE FOR SILICON SINGLE CRYSTAL PULLING OPERATION AND PROCESS FOR MANUFACTURING THE SAME - A quartz glass crucible for silicon single crystal pulling operation that by a simple arrangement, attains prevention of any collapse onto the inside at a superior edge of straight trunk part; and a process for manufacturing the same. The quartz glass crucible for silicon single crystal pulling operation having a straight trunk part and a bottom part, is characterized in that at least the straight trunk part is provided with a gradient of fictive temperature so that the fictive temperature on the outermost side thereof is 25° C. or more lower than the fictive temperature on the innermost side thereof. | 06-03-2010 |
| 20090163344 | Component of Quartz Glass for Use in Semiconductor Manufacture and Method for Producing the Same - The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO | 06-25-2009 |
| 20090139265 | Method and device for manufacturing silica glass | 06-04-2009 |
| 20090100871 | METHOD FOR MANUFACTURING A SILICA GLASS BLOCK - A method for manufacturing a silica glass block is provided in which, by markedly reducing the bubbles within the silica glass block, the quality of a silica glass block can be improved, contamination of the silica glass block can be prevented, and the yield of the silica glass block can be improved. The method comprises preparing a natural or synthetic silica raw material powder, packing the silica raw material powder into a glass fusing furnace, preheat treating the silica raw material powder packed into the fusing furnace, heating and fusing the heat preheat-treated silica raw material powder, and cooling a silica glass melt fused in the fusing furnace. The silica raw material powder packed into the fusing furnace is closely packed in the packing step, and an evacuation and a rare gas or H | 04-23-2009 |
| 20090098370 | BLACK SYNTHETIC QUARTZ GLASS WITH A TRANSPARENT LAYER - To provide a black synthetic quartz glass with a transparent layer, which has high emissivity in the far infrared region, has excellent light-shielding properties, maintains the same degree of purity as synthetic quartz glass in terms of metal impurities, has high-temperature viscosity characteristics comparable to natural quartz glass, can undergo high-temperature processing like welding, and does not release carbon from its surface; together with a method for the production thereof. | 04-16-2009 |
| 20090041960 | METHOD FOR MAKING A SILICA GLASS CRUCIBLE - A rotating mold has a plurality of air channels that communicate with a cavity formed in the mold. Silica grain is deposited in the rotating mold and then formed into the shape of a crucible having a lower portion that comprises a substantially uniformly thick wall. An upper portion of the grain is formed into a substantially narrowed wall portion about the perimeter of the formed shape. The silica grain is heated, and a pump draws gas through the air channels while the silica fuses. There is a pressure drop across the narrowed wall portion. After fusing, the upper portion of the crucible, including the narrowed wall portion, is cut off. | 02-12-2009 |
| 20080241412 | Member for plasma etching device and method for manufacture thereof - A member for a plasma etching device, which comprises a device substrate comprising quartz glass, aluminum, alumite or a combination thereof and, formed on the surface thereof, a coating film of yttrium oxide or YAG having a film thickness of 10 μm or more and a variation in the thickness of 10% or less, and preferably a surface roughness (Ra) of 1 μm or less; and a method for manufacturing the member for a plasma etching device, which comprises a step of plasma-spraying yttrium oxide or YAG to the surface of said device substrate or a step of fusing yttrium oxide or YAG with an oxyhydrogen flame, followed by coating the surface with the fused product, or a step of applying a solution containing yttrium, a yttrium compound or YAG on the above surface, followed by heating to fuse the resultant coating, or a combination of the above steps, thereby forming a coating film of yttrium oxide or YAG having a film thickness 10 μm or more and a variation in the thickness of 10% or less, and preferably a surface roughness (Ra) of 1 μm or less. The member for a plasma etching device is capable of retaining high plasma resistance for a long period of time, is free from the occurrence of the abnormal etching owing to partial change of electric characteristics, and thus can be used for a long time, in particular, even in the treatment of a large semiconductor device of a 12 inch silicon wafer. | 10-02-2008 |
| 20080216513 | Method for the Regeneration of a Worn Quartz Glass Jig - To provide a technique with which a quartz glass jig and a doped quartz glass jig are regenerated by completely removing the impurities which are attached to the surface and the impurities which have diffused into the interior from quartz glass jigs which have been used in semiconductor production processes and then carrying out working repair and removing the contamination from the working processes as well. After use, the impurities are removed from the aforementioned quartz glass jigs in the said purification treatment process which includes a purification treatment process in which the quartz glass jigs are subjected to a purification treatment in a gaseous atmosphere which includes a halogen element at a temperature within the region above a prescribed temperature. | 09-11-2008 |
