SHIN-ETSU HANDOTAI CO., LTD. Patent applications |
Patent application number | Title | Published |
20160130718 | SILICON WAFER HEAT TREATMENT METHOD - A silicon wafer heat treatment method includes: placing a silicon wafer on a SiC jig and into a heat treatment furnace; performing heat treatment on the silicon wafer in the heat treatment furnace in a first non-oxidizing atmosphere; reducing the temperature; and carrying the silicon wafer out of the heat treatment furnace. In the heat reduction step, after the temperature is reduced to the temperature at which the silicon wafer can be carried out of the heat treatment furnace, the first non-oxidizing atmosphere is switched to an atmosphere containing oxygen, an oxide film having a thickness of 1 to 10 nm is formed on the surface of the SiC jig in the atmosphere containing oxygen, and the atmosphere containing oxygen is then switched to a second non-oxidizing atmosphere. A silicon wafer heat treatment method can prevent carbon contamination from a jig and an environment during a heat treatment process. | 05-12-2016 |
20160126318 | SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL WAFER - A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot grown by the CZ method so as to have a carbon concentration ranging from 3×10 | 05-05-2016 |
20160118486 | SEMICONDUCTOR DEVICE - Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition and second layer containing less Al than the first layer, the first and second layers being alternately stacked; second buffer layer on the first buffer layer and is formed of third layer containing Al composition and fourth layer containing less Al than the third layer, the third and fourth layers being alternately stacked; and third buffer layer on the second buffer layer and is formed of fifth layer containing Al composition and sixth layer containing less Al than the fifth layer, the fifth and sixth layers being alternately stacked, wherein the second buffer layer contains more Al than the first and third buffer layers. Thus, the semiconductor device leakage can be suppressed while reducing stress which is applied to buffer layer and can improve flatness of active layer upper face. | 04-28-2016 |
20160118294 | METHOD OF PRODUCING BONDED WAFER - Method of producing bonded wafer including thin film on base wafer, including: implanting at least one gas ion selected from hydrogen ion and rare gas ion into bond wafer from surface of bond wafer to form layer of implanted ion; bonding surface from which ion is implanted into bond wafer and surface of base wafer directly or through insulator film; and then performing heat treatment to separate part of bond wafer along layer of implanted ion, wherein before bond wafer and base wafer are bonded, thickness of bond wafer and base wafer is measured, and combination of bond wafer and base wafer is selected such that difference in thickness between the wafers is less than 5 μm, and selected bond and base wafers are bonded. This method can inhibit variation in thickness in marble pattern that occurs in thin film and produce bonded wafer including thin film with uniform thickness. | 04-28-2016 |
20160115620 | SINGLE-CRYSTAL MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SINGLE CRYSTAL - A single-crystal manufacturing apparatus including: main chamber accommodating crucible and heater; pull chamber wherein a grown single-crystal is received; gas-flow guiding cylinder that has opening through which the single-crystal passes and extends downward from ceiling of main chamber; seed chuck configured to hold a seed crystal; and heat insulation plate that is level with lower end of the opening of gas-flow guiding cylinder when raw material is heated and melted, and pulled together with the seed crystal when single-crystal is pulled. The seed chuck includes a mounting fixture to mount heat insulation plate. Mounting fixture has a mechanism allowing heat insulation plate to be mounted so the heat insulation plate can be rotated independently of the rotation of the seed chuck. This apparatus can be readily introduced, melt raw material with low heater power; inhibit occurrence of dislocation during seeding and generation of dislocation in single-crystal when single-crystal is pulled. | 04-28-2016 |
20160111273 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided. | 04-21-2016 |
20150375363 | METHOD OF PRODUCING CARRIER FOR USE IN DOUBLE-SIDE POLISHING APPARATUS AND METHOD OF DOUBLE-SIDE POLISHING WAFERS - A method of producing a carrier for use in a double-side polishing apparatus, the method including engaging an insert with a holding hole formed in a carrier body and sticking the insert to the holding hole, the carrier body being configured to be disposed between upper and lower turn tables to which polishing pads are attached of the double-side polishing apparatus, the holding hole being configured to hold a wafer during polishing, the insert being configured to contact an edge of the wafer to be held, the method including: performing a lapping process and a polishing process on the insert; engaging the insert subjected to the lapping process and the polishing process with the holding hole of the carrier body; and sticking and drying the engaged insert while applying a load to the insert in a direction perpendicular to main surfaces of the carrier body. | 12-31-2015 |
20150360959 | METHOD OF PRODUCING SILICON CARBIDE AND SILICON CARBIDE - The present invention provides a method of producing silicon carbide, comprising: providing a silicon-crystal producing apparatus with a carbon heater; forming a silicon carbide by-product on a surface of the carbon heater when a silicon crystal is produced from a silicon melt contained in a container heated by the carbon heater under a non-oxidizing atmosphere; and collecting the silicon carbide by-product to produce the silicon carbide. A method that can produce silicon carbide with low energy at low cost is thereby provided. | 12-17-2015 |
20150340279 | METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER - The present invention provides a method for manufacturing SOI wafer, wherein, after plasma treatment has been performed on at least one surface of a bonding interface of the bond wafer and a bonding interface of the base wafer, bonding is performed through the oxide film, and the bond wafer is delaminated at the ion implanted layer by the delamination heat treatment comprising a first heat treatment at 250° C. or less for 2 hours or more and a second heat treatment at 400° C. to 450° C. for 30 minutes or more. Thereby, the method of manufacturing the SOI wafer that is small in SOI layer film thickness range, is small in surface roughness of the SOI layer surface, is smooth in shape of a terrace part and has no defects such as voids, blisters and so forth in the SOI layer can be provided. | 11-26-2015 |
20150287630 | METHOD OF MANUFACTURING SOI WAFER - A method of manufacturing an SOI wafer, includes, before forming an oxide film, heat treating a prepared silicon wafer at a temperature ranging from 1100° C. to 1250° C. under an oxidizing atmosphere for 30 minutes to 120 minutes and polishing a surface of the silicon wafer subjected to the heat treatment, which will become a bonding interface. The method can sufficiently dissolve defects in a bond wafer in SOI-wafer manufacture and manufacture an SOI wafer with few faults such as defects. The method also can repeatedly reuse a separated wafer, which is produced as a by-product in the ion implantation separation method, as the bond wafer. | 10-08-2015 |
20150249035 | METHOD FOR MANUFACTURING SOI WAFER - The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250° C. or less at temperature-decreasing rate of less than 3.0° C./min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace. | 09-03-2015 |
20150243550 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing SOI wafer of forming an oxide film on a bond wafer of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer. The oxide film is formed on the bond wafer such that on a back surface it is made thicker than the oxide film on a bonded face. The method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI and bond wafers after delamination where it has been delaminated by an ion implantation delamination method. | 08-27-2015 |
20150217425 | DOUBLE-SIDE POLISHING METHOD - A double-side polishing method of polishing both surfaces of a wafer by holding the wafer with a carrier including a holding hole configured to hold the wafer and a ring-shaped resin insert disposed along an internal circumference of the holding hole, the resin insert having an inner circumferential surface configured to contact a peripheral portion of the wafer, interposing the carrier between upper and lower turn tables to which polishing pads are attached, polishing both the surfaces of the wafer while maintaining planarity of the inner circumferential surface at or below 100 μm and verticalness of the inner circumferential surface at or below 5°. The method can inhibit the degradation of the flatness of the polished wafer, such as particularly an outer circumferential sag, due to variation in shape of the inner circumferential surface of the resin insert of a carrier. | 08-06-2015 |
20150147944 | DOUBLE-DISC GRINDING APPARATUS AND WORKPIECE DOUBLE-DISC GRINDING METHOD - The invention is directed to a double-disc grinding apparatus including: a rotatable ring holder configured to support a sheet workpiece along a circumferential direction from an outer circumference side of the workpiece; a pair of grinding wheels for grinding surfaces of the workpiece supported by the ring holder; and a hydrostatic bearing for supporting the ring holder without contact from both of a direction of a rotational axis of the ring holder and a direction perpendicular to the rotational axis by hydrostatic pressure of fluid supplied from both directions, wherein supply pressures at which the fluid is supplied from the direction of the rotational axis and from the direction perpendicular to the rotational axis can be independently controlled. The invention provides a double-disc grinding apparatus and a workpiece double-disc grinding method that can improve variation in nanotopography depending on the lot of workpieces or grinding wheels to obtain nanotopography stably. | 05-28-2015 |
20150147942 | METHOD OF DOUBLE-SIDE POLISHING WAFER - The present invention provides method of double-side polishing a wafer, including: simultaneously polishing both surfaces of the wafer by holding the wafer in a holding hole of a carrier, interposing the held wafer between upper and lower turn tables to which polishing pads are attached, rotating the carrier about an axis of the carrier and revolving the carrier; and repeating the polishing in a batch manner, wherein a direction in which the carrier is revolved is reversed every polishing batch while repeating the polishing in a batch manner. The method enables wafers with high flatness to be stably obtained while inhibiting reduction in productivity due to dressing. | 05-28-2015 |
20150145551 | SEMICONDUCTOR SUBSTRATE EVALUATING METHOD, SEMICONDUCTOR SUBSTRATE FOR EVALUATION, AND SEMICONDUCTOR DEVICE - On an EP substrate | 05-28-2015 |
20150118825 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer, including performing a plasma activation treatment on at least one of the bonded surfaces of the bond wafer and the base wafer before bonding, wherein the plasma activation treatment is performed while a back surface of at least one of the bond wafer and the base wafer is placed on a stage with the back surface being in point contact or line contact with the stage. The method can inhibit increase in attached substances such as particles on the back surface of a wafer during the plasma activation treatment, and prevent re-attachment of the attached substances to the bonded surface of the wafer, particularly when the wafer after the plasma activation treatment is cleaned with a batch cleaning apparatus. | 04-30-2015 |
20150053234 | METHOD FOR CLEANING SEMICONDUCTOR WAFER - The present invention is directed to a method for cleaning a semiconductor wafer which comprises filling a cleaning solution containing ammonia and aqueous hydrogen peroxide in a cleaning tank comprising a synthetic quartz material with an average Al concentration of 1 ppb or less, immersing the above-mentioned semiconductor wafer in the above-mentioned cleaning solution, and cleaning the above-mentioned semiconductor wafer so that a surface etching rate of the above-mentioned synthetic quartz by the above-mentioned cleaning solution becomes 0.3 nm/min or less, and according to this method, a cleaning method which can maintain the Al concentration in the ammonia and per-water cleaning solution to a low concentration and can improve surface cleanliness of the semiconductor wafer is provided. | 02-26-2015 |
20150031271 | DOUBLE-SIDE POLISHING APPARATUS - A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding bole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield. | 01-29-2015 |
20150020728 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER - The present invention provides a method for manufacturing a silicon single crystal wafer, wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×10 | 01-22-2015 |
20140379276 | METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRYSTAL AND METHOD FOR CALCULATING RESISTIVITY SHIFT AMOUNT - A method for calculating a nitrogen concentration in a silicon single crystal doped with nitrogen, wherein the correlation among a carrier concentration difference Δ[n] obtained from a difference between resistivity after heat treatment by which an oxygen donor is eliminated and resistivity after heat treatment by which a nitrogen-oxygen donor is eliminated, an oxygen concentration [Oi], and a nitrogen concentration [N] in the nitrogen-doped silicon single crystal is obtained in advance, and an unknown nitrogen concentration [N] in a nitrogen-doped silicon single crystal is obtained by calculation from the carrier concentration difference Δ[n] and the oxygen concentration [Oi] based on the correlation. As a result, a method for calculating a nitrogen concentration in a silicon single crystal, the method that can obtain the value of a nitrogen concentration even when an oxygen concentration is different, and a method for calculating the shift amount of resistivity are provided. | 12-25-2014 |
20140373774 | METHOD FOR CALCULATING A HEIGHT POSITION OF SILICON MELT SURFACE, METHOD FOR PULLING SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL PULLING APPARATUS - A method for calculating a height position of a silicon melt surface at the time of pulling a CZ silicon single crystal is disclosed, including: obtaining a first crystal diameter measured from a fusion ring on a boundary of the silicon melt and the silicon single crystal by using a CCD camera installed at an arbitrary angle relative to the silicon single crystal, and a second crystal diameter measured by using two CCD cameras installed parallel to both ends of a crystal diameter of the silicon single crystal; and calculating the height position of the silicon melt surface in the crucible during pulling of the silicon single crystal from a difference between the first crystal diameter and the second crystal diameter. As a result, a method for enabling further accurately calculating a height position of a silicon melt surface at the time of pulling a silicon single crystal is provided. | 12-25-2014 |
20140329372 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during the rising of a temperature and/or the falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. The result is a method for manufacturing a SOI wafer that enables manufacturing a SOI wafer that has improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film. | 11-06-2014 |
20140322895 | METHOD FOR MANUFACTURING A BONDED SOI WAFER - According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing a second sacrificial oxidation treatment thereon after a second RTA treatment has been performed thereon, wherein the first and second RTA treatments are performed under a hydrogen gas containing atmosphere and at a temperature of 1100° C. or more, wherein after a thermal oxide film has been formed on the aforementioned SOI layer front surface by performing only thermal oxidation by a batch type heat treating furnace at a temperature of 900° C. or more and 1000° C. or less in the first and second sacrificial oxidation treatments, a treatment for removing the thermal oxide film is performed. | 10-30-2014 |
20140320867 | METHOD FOR PROCESSING WAFER - The invention provides a method for processing a wafer by inserting the wafer into a holding hole of a carrier to hold the wafer, and interposing the carrier holding the wafer between an upper turn table and a lower turn table to process both surfaces of the wafer simultaneously, including: before processing the wafer, detecting a height position of the upper turn table by a laser displacement sensor while interposing the carrier holding the wafer between the upper turn table and the lower turn table; and determining that the wafer is not normally held to redo the holding of the wafer if a difference between the detected height position and a reference position exceeds a threshold. The method can automatically detect accurately a failure in holding the wafer before processing to prevent the wafer from breaking and eliminate the necessity of operator's inspection using touch to improve operation efficiency. | 10-30-2014 |
20140293295 | METHOD FOR MEASURING FILM THICKNESS DISTRIBUTION - A method for measuring film thickness distribution, including calculating profile P1 indicating wavelength dependence of a reflectance of a first wafer being an object measured with respect to a light at wavelengths not less than a wavelength region of visible light; calculating profile P21 indicating wavelength dependence of a reflectance of a second wafer to light at wavelengths not less than wavelength region of visible light; obtaining a wavelength λ1 observed when profile P31 of a difference between calculated profiles P1 and P21 becomes zero; and selecting waveband including the obtained wavelength λ1 as a waveband of light for use in film thickness distribution measurement by reflection spectroscopy. The film thickness distribution of the first thin film is measured by reflection spectroscopy in a manner that a surface of the first wafer is irradiated with a light to selectively measure only reflected light at a selected waveband. | 10-02-2014 |
20140273400 | RECLAIMING PROCESSING METHOD FOR DELAMINATED WAFER - The invention provides a reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-produce at the time of producing a bonded wafer is subjected to reclaiming polishing and is again available as a bond wafer or a base wafer, wherein, in the reclaiming polishing, the delaminate wafer is polished with use of a double-side polisher in a state that oxide film is not formed on a delaminated surface of the delaminated wafer and oxide film is formed on a back side which is the opposite side of the delaminated surface. As a result, the reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-product at the time of manufacturing a bonded wafer based on an ion implantation delamination method is subjected to the reclaiming polishing, which enables sufficiently improving quality. | 09-18-2014 |
20140256227 | DOUBLE-SIDE POLISHING METHOD - The present invention is directed to a double-side polishing method including interposing a wafer held by a carrier between upper and lower turn tables to which respective polishing pads are attached, and rotating and revolving the carrier while supplying a polishing agent to polish both surfaces of the wafer at the same time, the method including the steps of: first polishing at a high polishing rate; second polishing at a low polishing rate; measuring flatness of the polished wafer; and determining polishing conditions of the second polishing in a next polishing batch on a basis of the measured flatness. The method can stably improve the flatness of a wafer without being affected by variations in carrier thickness over time. | 09-11-2014 |
20140216222 | METHOD FOR SLICING WORKPIECE AND WIRE SAW - A method for slicing a workpiece into wafers by imparting axial reciprocating motion to a wire wound around a plurality of grooved rollers, and moving the workpiece relatively downwardly to press the workpiece against the reciprocating wire and feed the workpiece with the workpiece cut into while supplying a slurry to the wire, the method including the steps of: configuring each of the grooved rollers such that a distance from a bottom of grooves of the grooved roller to a rotating shaft of the grooved roller decreases gradually from a wire-supply side toward a wire-collection side; slicing the workpiece in such a mariner that the workpiece is pressed against the wire on the wire-supply side before the workpiece is pressed against the wire on the wire-collection side. | 08-07-2014 |
20140186977 | METHOD FOR CALCULATING WARPAGE OF BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER - A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer. | 07-03-2014 |
20140174339 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step. | 06-26-2014 |
20140162456 | METHOD FOR POLISHING SILICON WAFER AND POLISHING AGENT - The present invention is directed to a method for polishing a silicon wafer, the method comprising: polishing the silicon wafer by bringing the silicon wafer into sliding contact with a polishing pad attached to a turn table while supplying a polishing agent stored in a tank to the polishing pad; and circulating the polishing agent to recover the supplied polishing agent in the tank, wherein the silicon wafer is polished while adjusting a concentration of silicate ions contained in the polishing agent in the tank to be within a predetermined range. The present invention provides a polishing agent having a high polishing rate that enables the polishing rate to be kept constant among polishing batches, and a method for polishing a silicon wafer accurately with a target polishing stock removal or a target finishing thickness by using the polishing agent. | 06-12-2014 |
20140134851 | OZONE GAS GENERATION PROCESSING APPARATUS, METHOD OF FORMING SILICON OXIDE FILM, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER - An ozone gas generation processing apparatus that includes a light source of ultraviolet rays and a wafer placement section, generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen, and processes a wafer on the wafer placement section with the ozone gas, the ozone gas generation processing apparatus comprising a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer placed on the wafer placement section. An ozone gas generation processing apparatus and a method of forming an oxide film silicon film can make an adjustment to make thinner an oxide film formed on a wafer surface, the wafer surface is not damaged by ultraviolet rays when processed, and a method for evaluating a silicon single crystal wafer, obtaining a more stable measurement value of C-V characteristics are provided. | 05-15-2014 |
20140120695 | METHOD FOR MANUFACTURING BONDED SUBSTRATE HAVING AN INSULATOR LAYER IN PART OF BONDED SUBSTRATE - A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer. | 05-01-2014 |
20140119399 | METHOD FOR DETECTING CRYSTAL DEFECTS - A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at α=the oxygen solid solubility/the initial oxygen concentration, α falls within a range from 1 to 3. | 05-01-2014 |
20140113531 | POLISHING HEAD AND POLISHING APPARATUS - A polishing head comprising an annular rigid ring; a rubber film attached to the rigid ring by using uniform tensile force; a back plate that is connected to the rigid ring and forms a space portion with the rubber film and the rigid ring; and an annular template that is provided at a peripheral portion of a lower surface portion of the rubber film concentrically with the rigid ring and configured to hold an edge portion of a workpiece, the polishing head holding a back surface of the workpiece on the lower surface portion of the rubber film and sliding a front surface of the workpiece on a polishing pad attached to a turn table to perform polishing. The polishing head and the polishing apparatus can be used for final polishing and uniformly polish the entire front surface regardless of the thickness of the template. | 04-24-2014 |
20140103492 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage. | 04-17-2014 |
20140101925 | POLISHING HEAD, POLISHING APPARATUS, AND METHOD FOR POLISHING WORKPIECE - A polishing head configured to hold a workpiece at the time of polishing the workpiece by bringing a front surface of the workpiece into sliding contact with a polishing pad attached to on a turn table, the polishing head includes: a workpiece-holding board configured to hold a back surface of the workpiece, the workpiece-holding board being flexible and being composed of ceramics; a sealed space defined on a surface of the workpiece-holding board on an opposite side of a surface on which the workpiece is held; and a pressure-controlling device configured to control a pressure in the sealed space, the polishing head being capable of adjusting a shape of the flexible workpiece-holding board into a convex shape or a concave shape by controlling a pressure in the sealed space by the pressure-controlling device. | 04-17-2014 |
20140097523 | METHOD FOR MANUFACTURING BONDED WAFER AND BONDED SOI WAFER - A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation. | 04-10-2014 |
20140048100 | METHOD FOR CLEANING SEMICONDUCTOR WAFER - The present invention provides a method for cleaning a semiconductor wafer, in which the method includes cleaning steps of HF cleaning, ozonated water cleaning and HF cleaning in this order at least one time, wherein in the HF cleaning carried out last in the method for cleaning the semiconductor wafer, cleaning is so carried out that an oxide film formed on a surface of the semiconductor wafer by the ozonated water is not entirely removed and to remain a part of a thickness thereof on the surface of the semiconductor wafer. As a result, a method for cleaning a semiconductor wafer in which a metal impurity level and a particle level can be reduced simultaneously in the cleaning of the semiconductor wafer is provided. | 02-20-2014 |
20140030957 | METHOD FOR ADJUSTING HEIGHT POSITION OF POLISHING HEAD AND METHOD FOR POLISHING WORKPIECE - A method for adjusting a height position of a polishing head, comprising moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing head holding no workpiece, and then rotating at least one of the polishing head and the turn table; measuring the load torque current of the at least one of the polishing head and the turn table rotated with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and recording the height position of the polishing head as a reference position when a variation in the measured load torque current exceeds a threshold; and adjusting the height position of the polishing head to the predetermined position on the basis of a distance from the reference position. | 01-30-2014 |
20140027633 | METHOD FOR MEASURING FILM THICKNESS OF SOI LAYER OF SOI WAFER - A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOT layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays. | 01-30-2014 |
20140000580 | METHOD FOR RESUMING OPERATION OF WIRE SAW AND WIRE SAW | 01-02-2014 |
20130341763 | BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF - The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method. | 12-26-2013 |
20130340671 | SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A method for manufacturing a silica glass crucible, includes: preparing a crucible base material that is made of silica glass and has a crucible shape; fabricating a synthetic silica glass material based on a direct method or a soot method; processing the synthetic silica glass material into the crucible shape without being pulverized; and bonding an inner wall of the crucible base material and an outer wall of the synthetic silica glass material processed into the crucible shape through a silica powder by performing a heat treatment. As a result, it is possible to provide the silica glass crucible that can avoid occurrence of dislocations of silicon single crystal at the time of manufacturing the silicon single crystal, has high heat-resisting properties, and can suppress a reduction in productivity and yield ratio, the manufacturing method thereof, and the method for manufacturing silicon single crystal using such a silica glass crucible. | 12-26-2013 |
20130323153 | SILICON SINGLE CRYSTAL WAFER - The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a Czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×10 | 12-05-2013 |
20130319319 | SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER USING THE SAME - The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion. | 12-05-2013 |
20130316522 | METHOD FOR MANUFACTURING SOI WAFER - The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method. | 11-28-2013 |
20130316521 | METHOD FOR PRODUCING SILICON WAFER - The present invention provides a method for producing a silicon wafer including a step of, after growing the oxide film on one surface of a raw material silicon wafer by chemical-vapor deposition, performing double-side polishing of the raw material silicon wafer in such a manner that a suede polishing pad or a velour polishing pad with an asker-C rubber hardness of 50° or more but less than 90° is used for the oxide-film surface. | 11-28-2013 |
20130316139 | METHOD FOR MANUFACTURING SILICON SUBSTRATE AND SILICON SUBSTRATE - A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a mariner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y≦ | 11-28-2013 |
20130276693 | SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD - A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident. | 10-24-2013 |
20130270520 | LIGHT-EMITTING DEVICE - The present invention provides a light-emitting device manufactured with use of a compound semiconductor substrate comprising at least: a p-type cladding layer; a multiple-active layer portion in which three or more active layers made of (Al | 10-17-2013 |
20130264685 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER AND ANNEALED WAFER - The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×10 | 10-10-2013 |
20130247815 | SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL - A single crystal production apparatus including: a crucible containing raw material melt; a heater heating the raw material melt; a cooling cylinder that is cooled forcedly by a cooling medium; and a cooling chamber that houses the crucible, the heater, and the cooling cylinder, wherein a heat-shielding member having a heat insulating material is disposed, near an interface between the raw material melt and a single crystal being pulled, in such a way as to surround the single crystal being pulled, the cooling cylinder is disposed above the heat-shielding member in such a way as to surround the single crystal being pulled, and a cooling-cylinder-peripheral heat insulator is disposed with a gap provided between the cooling-cylinder-peripheral heat insulator and a periphery of the cooling cylinder in such a way as to surround the cooling cylinder. | 09-26-2013 |
20130233344 | METHOD FOR CLEANING SEMICONDUCTOR WAFER - The present invention is a method for cleaning a semiconductor wafer comprising the steps of cleaning the semiconductor wafer with an SC1 cleaning solution, cleaning the semiconductor wafer cleaned by the SC1 cleaning solution with hydrofluoric acid, and cleaning the semiconductor wafer cleaned by the hydrofluoric acid with ozonated water having an ozone concentration of 3 ppm or more, wherein an etching removal of the semiconductor wafer with the SC1 cleaning solution is made 0.1 to 2.0 nm, whereby a method for cleaning a semiconductor wafer in which worsening of the surface roughness of the wafer due to cleaning can be reduced and cleaning of the wafer can be carried out effectively can be provided. | 09-12-2013 |
20130180447 | SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface. | 07-18-2013 |
20130178071 | THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER - Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film. | 07-11-2013 |
20130174777 | QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL - Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible. | 07-11-2013 |
20130125810 | APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL - The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part. | 05-23-2013 |
20130102126 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×10 | 04-25-2013 |
20130098888 | METHOD FOR HEAT-TREATING WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS - The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided. | 04-25-2013 |
20130093060 | METHOD FOR PRODUCING SILICON WAFER AND SILICON WAFER - A silicon wafer and method for producing a silicon wafer, including at least: a first heat treatment process in which rapid heat treatment is performed on the wafer by using a rapid heating/cooling apparatus in an atmosphere containing at least one of nitride film formation atmospheric gas, rare gas, and oxidizing gas at a temperature higher than 1300° C. and lower than or equal to a silicon melting point for 1 to 60 seconds; and a second heat treatment process in which temperature and atmosphere are controlled to suppress generation of a defect caused by a vacancy in the wafer and rapid heat treatment is performed on the wafer. Therefore, RIE defects such as oxide precipitates, COPs, and OSFs are not present at a depth of at least 1 μm from the surface, which becomes a device fabrication region, and the lifetime is 500 μsec or longer. | 04-18-2013 |
20130063733 | Method for evaluating thin-film-formed wafer - A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength λ is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner. | 03-14-2013 |
20130058540 | METHOD FOR MEASURING AND CONTROLLING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A method for measuring a distance between a lower end surface of a heat shielding member including a criterion reflector inside a concavity on the lower end surface and a surface of a raw material melt includes: a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the raw material melt in a crucible, measuring the distance between the lower end surface of the heat shielding member and the surface of the raw material melt and observing a position of a mirror image of the criterion reflector with a fixed point observation apparatus; and measuring a movement distance of the mirror image with the apparatus and calculating the distance between the lower end surface of the heat shielding member and the surface of the raw material melt from the movement distance of the image and the measured distance. | 03-07-2013 |
20130037920 | SILICON EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME - The present invention includes a method for manufacturing a silicon epitaxial wafer having a silicon homoepitaxial layer formed on a surface of a silicon single crystal wafer, including the steps of: preparing the silicon single crystal wafer such that a plane orientation of the silicon single crystal wafer is tilted at an angle in the range from 0.1° to 8° in a <112> direction from a {110} plane; and growing the silicon homoepitaxial layer on the prepared silicon single crystal wafer. According to the present invention, a silicon epitaxial wafer using the {110} substrate with improved surface quality, such as Haze and surface roughness and a method for manufacturing the silicon epitaxial wafer are provided. | 02-14-2013 |
20130032083 | SINGLE-CRYSTAL MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTAL - The present invention provides a single-crystal manufacturing apparatus comprising a chamber that accommodates a crucible containing a raw material melt; a pulling mechanism for pulling a single crystal; a heater for heating the raw material melt, the heater being movable upwardly and downwardly; and a temperature measurement means for measuring temperature of the heater, wherein the temperature measurement means is movable upwardly and downwardly in response to the upward and downward movement of the heater. The present invention provides a single-crystal manufacturing apparatus and a method for manufacturing a single crystal that can stably measure the heater temperature regardless of a change in operation conditions and hence stably control the heater temperature and the heater output, resulting in a stable operation. | 02-07-2013 |
20130023069 | METHOD FOR CHECKING ION IMPLANTATION CONDITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER - A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation. | 01-24-2013 |
20120329373 | DOUBLE-SIDE POLISHING APPARATUS - A double-side polishing apparatus including at least: upper and lower turn tables each having a polishing pad attached thereto; a carrier having a holding hole formed therein for holding a wafer between the upper and lower turn tables; a sensor for detecting a thickness of the wafer during polishing, the sensor being disposed in a through-hole provided at the upper turn table in a direction of an upper-turn-table rotation axis; and a sensor holder for holding the sensor, wherein a material of the sensor holder is quartz. As a result, there is provided a double-side polishing apparatus that can polish a wafer while the difference from the target wafer thickness is reduced by surely inhibiting deformation of the sensor holder due to the influence of heat generated during the polishing of the wafer. | 12-27-2012 |
20120326268 | SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED SOI WAFER AND METHOD FOR MANUFACTURING THE SAME - A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle Φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle Φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×10 | 12-27-2012 |
20120309175 | VAPOR-PHASE GROWTH SEMICONDUCTOR SUBSTRATE SUPPORT SUSCEPTOR, EPITAXIAL WAFER MANUFACTURING APPARATUS, AND EPITAXIAL WAFER MANUFACTURING METHOD - According to the present invention, there is provided a vapor-phase growth semiconductor substrate support susceptor for supporting a semiconductor substrate at the time of vapor-phase growth, wherein the susceptor comprises a pocket portion in which the semiconductor substrate is arranged and has a taper portion having a taper formed such that an upper surface of the susceptor is inclined upwards or downwards from an edge of the pocket portion to an outer side. As a result, there can be provided the susceptor for supporting the semiconductor substrate at the time of vapor-phase growth that can improve flatness of an epitaxial wafer by controlling a layer thickness of an epitaxial layer at a peripheral portion on a main front surface side of the epitaxial wafer, and the epitaxial wafer manufacturing apparatus using this susceptor. | 12-06-2012 |
20120301976 | METHOD FOR DESIGNING SOI WAFER AND METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and that is to be used in a device fabrication process or an inspection process including a process of controlling a position of the SOI wafer on the basis of intensity of reflected light from the SOI wafer when the SOI wafer is irradiated with light having a wavelength λ. The method includes the steps of: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength λ of the light for use in the process of controlling the position that is to be implemented on the SOI wafer after manufacturing; and fabricating the SOI wafer having the SOI layer formed on the buried insulator layer having the designed thickness. | 11-29-2012 |
20120298995 | WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESSES THEREFOR - Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×10 | 11-29-2012 |
20120295424 | METHOD FOR DESIGNING SOI WAFER AND METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and is suitable for photolithography with an exposure light having a wavelength λ comprises: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength λ of the exposure light utilized for the photolithography that is to be performed on the SOI wafer after manufacturing; and fabricating the SOI wafer that has the SOI layer formed on the buried insulator layer having the designed thickness. As a result, there is provided a method for designing an SOI wafer and a method for manufacturing an SOI wafer that enable the variation in the reflection rate of the exposure light due to the variation in the SOI layer thickness and hence variation in the exposure state of a resist to be inhibited in a photolithography operation. | 11-22-2012 |
20120289129 | POLISHING HEAD AND POLISHING APPARATUS - A polishing head including, below a polishing head body, a rubber film held by a disk-shaped mid plate and an annular guide ring disposed around the rubber film holding the back surface of the workpiece on a lower face portion of the rubber film. The polishing head also includes a base member that is coupled to a polishing head body through an elastic film and holds the guide ring and the mid plate such that the lower surface of the guide ring does not contact the polishing pad during polishing. The polishing head and polishing apparatus, are operable in both of the rough polishing process and final polishing process, that can stably achieve predetermined high flatness and high polishing stock removal uniformity in polishing of a workpiece and can obtain a workpiece with fewer fine particles having a diameter of 45 nm or more. | 11-15-2012 |
20120289044 | SEMICONDUCTOR SUBSTRATE, ELECTRODE FORMING METHOD, AND SOLAR CELL FABRICATING METHOD - A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. | 11-15-2012 |
20120289025 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer including bonding together a bond wafer and a base wafer each having a chamfered portion at an outer circumference and thinning the bond wafer, wherein the thinning of the bond wafer includes: a first step of performing surface grinding on the bond wafer such that a thickness of the bond wafer reaches a first predetermined thickness; a second step of removing an outer circumference portion of the ground bond wafer; and a third step of performing surface grinding on the bond wafer such that the thickness of the bond wafer reaches a second predetermined thickness. | 11-15-2012 |
20120244679 | METHOD FOR PRODUCING BONDED WAFER - The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method. | 09-27-2012 |
20120231612 | METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER - A method for manufacturing a silicon epitaxial wafer, including vapor-phase growing a silicon single crystal thin film on a silicon single crystal substrate in a hydrogen atmosphere while supplying a source gas; and cooling a silicon epitaxial wafer having the formed silicon single crystal thin film by calculating a temperature at which a standard value or a process average value of concentration of an evaluation target impurity present in the silicon single crystal thin film coincides with solubility limit concentration of the evaluation target impurity and setting a cooling rate of the silicon epitaxial wafer after the film formation to be less than 20° C./sec in a temperature range of at least plus or minus 50° C. from the calculated temperature. | 09-13-2012 |
20120204784 | SINGLE-CRYSTAL MANUFACTURING APPARATUS - The present invention is a single-crystal manufacturing apparatus for manufacturing a single crystal ingot according to the Czochralski method comprising: a crucible that contains a raw material melt; a heater having a cylindrical heat generating portion that surrounds the crucible; a main chamber that accommodates the heater; a heater electrode that supports the heater and supplies current to the heater; and a heat insulating plate provided below the cylindrical heat generating portion of the heater, wherein the heat insulating plate is fixed to and supported by the heater electrode through an insulating stationary member, and an insulating support member is provided on an upper surface of the heat insulating plate at a position at which the insulating support member faces a lower end of the cylindrical heat generating portion. Its object is to provide a single-crystal manufacturing apparatus that can inhibit heater deformation and prevent deterioration of heat efficiency. | 08-16-2012 |
20120192786 | SINGLE-CRYSTAL MANUFACTURING APPARATUS AND SINGLE-CRYSTAL MANUFACTURING METHOD - A single-crystal manufacturing apparatus according to the Czochralski method, including: a crucible that contains a raw material; a main chamber configured to accommodate a heater for heating and melting the raw material; and a pulling chamber configured to pull and accommodate a grown single crystal, the pulling chamber being continuously provided above the main chamber; an inner shield provided between the heater and the main chamber and for insulating heat radiated from the heater, and a supporting member for supporting the inner shield from below. The inner shield is supported at three or more supporting points contacting the supporting member, and a lower end of the inner shield except at the supporting points does not contact the supporting member. | 08-02-2012 |
20120135584 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment. | 05-31-2012 |
20120114531 | SILICON OXIDE REMOVAL APPARATUS AND FACILITY FOR RECYCLING INERT GAS FOR USE IN SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS - A silicon oxide removal apparatus for removing silicon oxide contained in an inert gas discharged from a silicon single crystal manufacturing apparatus, including at least: a contact means for bringing the inert gas discharged from the silicon single crystal manufacturing apparatus into contact with a strongly alkaline solution; and a neutralizing means for neutralizing an alkaline material contained in the inert gas brought into contact with the strongly alkaline solution. As a result, there is provided a silicon oxide removal apparatus and a facility for recycling an inert gas for use in a silicon single crystal manufacturing apparatus that can more effectively remove the silicon oxide contained in the inert gas discharged from the silicon single crystal manufacturing apparatus at low cost and enable recycle of the inert gas in which the silicon oxide has been effectively removed. | 05-10-2012 |
20120100788 | MANUFACTURING METHOD OF CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS, CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS, AND DOUBLE-SIDE POLISHING METHOD OF WAFER - A manufacturing method of a carrier for a double-side polishing apparatus for polishing surfaces of a wafer, the carrier having: a carrier body arranged between upper and lower turn tables, the carrier body having a holding hole for holding the wafer; and a ring-shaped resin insert arranged along an inner circumference of the holding hole, the resin insert having an inner circumferential surface to be brought into contact with a peripheral portion of the wafer to be held, the method having the steps of attaching, to the holding hole of the carrier body, a base material for the resin insert not having the inner circumferential surface to be brought into contact with the wafer to be held, and performing inner-circumferential-surface-forming processing on the base material for the resin insert to form the inner circumferential surface to be brought into contact with the peripheral portion of the wafer to be held. | 04-26-2012 |
20120100785 | METHOD FOR CHAMFERING WAFER - In a conventional wafer chamfering process, the chamfered shape (cross-sectional shape) of the wafer circumference is uniform. However, in the chamfering step in wafer manufacture, the uniform chamfered shape varies with respective circumferential positions. Therefore, a wafer chamfering method that takes into account deformation in the chamfering step in the wafer manufacture is to be provided. The wafer chamfering method is for chamfering a wafer by bringing a grooveless grindstone into contact with the edge (circumferential end) of a wafer. By this wafer chamfering method, a movement trajectory formed by moving the wafer and the grindstone in a relative manner in the Z-axis and Y-axis directions and forming the same cross-sectional shape on the entire wafer circumference is set as a reference. So as to perform a processing operation in which the relative positions of the wafer and the grindstone are changed from positions on the reference trajectory at least in one of the Z-axis and Y-axis directions depending on wafer rotation angle positions, different cross-sectional shapes are formed depending on the wafer rotation angle positions with the use of a piezoelectric actuator. | 04-26-2012 |
20120100783 | POLISHING PAD, MANUFACTURING METHOD THEREOF AND POLISHING METHOD - A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing pad | 04-26-2012 |
20120035863 | INSPECTION METHOD OF SOI WAFER - An inspection method of an SOI wafer in which profiles P1 and P2 are calculated in the SOI wafer to be inspected and in an SOI wafer having a film thickness of the SOI layer thicker or thinner than that of the SOI wafer to be inspected, respectively; a profile P3 of a difference between P1 and P2, or a profile P4 of a change ratio of P1 and P2 is calculated; light having the wavelength band selected on the basis of a maximum peak wavelength within the calculated profiles P3 or P4 is irradiated to the surface of the SOI wafer to be inspected, to detect the reflected-light from the SOI wafer; and a place of a peak generated by an increase in reflection intensity of the detected reflected-light is found, as the defect caused by the change in the film thickness of the SOI layer. | 02-09-2012 |
20120001301 | ANNEALED WAFER, METHOD FOR PRODUCING ANNEALED WAFER AND METHOD FOR FABRICATING DEVICE - An annealed wafer obtained by performing rapid thermal annealing on a silicon single crystal wafer sliced from a silicon single crystal ingot in which an entire plane is an OSF region, an N region outside an OSF region, or a mixed region thereof, the silicon single crystal ingot being grown by the Czochralski method, in which RIE defects do not exist in a region having at least a depth of 1 μm from a surface, a good chip yield of a TDDB characteristic is 80% or more, and a depth of a region where an oxygen concentration is decreased due to outward diffusion is within 3 μm from the surface, and a method for producing an annealed wafer. | 01-05-2012 |
20110281420 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer. | 11-17-2011 |
20110271898 | SINGLE-CRYSTAL MANUFACTURING METHOD - The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of bulling the single crystal having a large diameter, in manufacture of the single crystal. | 11-10-2011 |
20110266655 | SEMICONDUCTOR WAFER HAVING MULTILAYER FILM, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard. | 11-03-2011 |
20110256815 | Method for polishing silicon wafer, method for producing silicon wafer, apparatus for polishing disk-shaped workpiece, and silicon wafer - The present invention is a method for polishing a silicon wafer, in which an oxide film is formed on a back surface side of the wafer, wherein the oxide film on a chamfered portion of the silicon wafer is removed, and the oxide film on a peripheral portion of the back surface of the wafer is polished over at least 2 mm from the outermost peripheral portion of the back surface of the wafer so that a thickness of the polished oxide film decreases from inside to outside of the wafer, a method for producing such a silicon wafer, and a silicon wafer. Thereby, there are provided a method for polishing a silicon wafer in which particles' attaching to a wafer surface after handling can be prevented, decrease of resistivity due to autodoping is not brought about, and moreover, productivity does not decrease; a method for producing such a silicon wafer; an apparatus for polishing a disk-shaped workpiece suitable for performing the methods; and a silicon wafer in which particles do not attach to a surface after handling even if an oxide film is formed on a back surface of the wafer and decrease of resistivity due to autodoping is not brought about. | 10-20-2011 |
20110237049 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film. | 09-29-2011 |
20110223740 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film. | 09-15-2011 |
20110214605 | SINGLE-CRYSTAL MANUFACTURING METHOD AND SINGLE-CRYSTAL MANUFACTURING APPARATUS - The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided. | 09-08-2011 |
20110214604 | UPPER HEATER FOR USE IN PRODUCTION OF SINGLE CRYSTAL, SINGLE CRYSTAL PRODUCTION EQUIPMENT, AND METHOD FOR PRODUCING SINGLE CRYSTAL - The present invention is directed to an upper heater for use in the production of a single crystal, the upper heater in which at least electrodes to which a current is supplied and a heat generating section which generates heat by resistance heating are provided, the upper heater being used when a single crystal is produced by Czochralski method, the upper heater being placed above a graphite heater which is placed so as to surround a crucible containing silicon melt, wherein the heat generating section is ring-shaped and is placed so as to surround the crucible, and has slits formed from the inside and the outside of the heat generating section in a horizontal direction. As a result, an upper heater for use in the production of a single crystal, the upper heater which can control a crystal defect of the single crystal efficiently, and single crystal production equipment and a method for producing a single crystal, the equipment and the method which can produce a high-quality single crystal by controlling a crystal defect efficiently and improving the oxygen concentration controllability by using the upper heater for use in the production of a single crystal, are provided. | 09-08-2011 |
20110212598 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer including at least the steps of: forming an ion-implanted layer inside a bond wafer; bringing the ion-implanted surface of the bond wafer into close contact with a surface of a base wafer directly or through a silicon oxide film; and performing heat treatment for delaminating the bond wafer at the ion-implanted layer, wherein the heat treatment step for delaminating includes performing a pre-annealing at a temperature of less than 500° C. and thereafter performing a delamination heat treatment at a temperature of 500° C. or more, and the pre-annealing is performed at least by a heat treatment at a first temperature and a subsequent heat treatment at a second temperature higher than the first temperature. As a result, there is provided a method for manufacturing a bonded wafer having high quality, for example, mainly the reduction of defects, by forming a high bonding strength state at a lower temperature than the temperature at which the delamination is caused, in the manufacture of the bonded wafer by the Smart Cut method (registered trademark). | 09-01-2011 |
20110174285 | INGOT CUTTING APPARATUS AND INGOT CUTTING METHOD - An ingot cutting apparatus having at least one coolant pocket storing the coolant to be supplied to the blade, wherein the blade-abrasive-grain portion is brought into contact with the coolant stored in the at least one coolant pocket by causing the blade-abrasive-grain portion of the blade to travel through a groove portion provided at an upper portion of the at least one coolant pocket while driving to rotate the blade so that the coolant is supplied to the blade. | 07-21-2011 |
20110151643 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer by forming an ion implanted layer in a bond wafer; bonding an ion implanted surface of the bond wafer to a surface of a base wafer directly or through a silicon oxide film; and performing a delamination heat treatment. After the formation of the ion implanted layer and before the bonding, a plasma treatment is carried out with respect to a bonding surface of at least one of the bond wafer and the base wafer. The delamination heat treatment is carried out at a fixed temperature by directly putting the bonded wafer into a heat-treating furnace whose furnace temperature is set to the fixed temperature less than 475° C. without a temperature increasing step. | 06-23-2011 |
20110146564 | METHOD FOR DETECTING DIAMETER OF SINGLE CRYSTAL, SINGLE-CRYSTAL MANUFACTURING METHOD BY USING THE SAME AND SINGLE-CRYSTAL MANUFACTURING APPARATUS - A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved. | 06-23-2011 |
20110139319 | VERTICAL HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD - According to the present invention, there is provided a vertical heat treatment apparatus which is a vertical heat treatment furnace comprising at least: a reaction tube; a heat treatment boat configured to hold a substrate; a heater configured to heat the substrate; a gas introduction tube configured to introduce an atmospheric gas into the reaction tube; a gas supply tube connected to the gas introduction tube; and a gas port portion that is formed at a flange body provided under the reaction tube or the reaction tube and into which the gas introduction tube is inserted, wherein the gas introduction tube is connected to the gas supply tube through a joint outside the reaction tube, the joint has at least a metal short tube having a flange portion, and the gas introduction tube is inserted into a through hole formed by connecting the flange portion of the metal short tube to the flange portion provided at the gas port portion through an O-ring and further connected to the gas supply tube through the joint. As a result, there can be provided the vertical heat treatment apparatus that can avoid damages to the gas introduction tube and easily achieve connection between the gas introduction tube and the gas supply tube without haze on a substrate. | 06-16-2011 |
20110136414 | POLISHING HEAD AND POLISHING APPARATUS - A polishing head for holding a workpiece when a surface of the workpiece is polished and a polishing apparatus provided with the polishing head, and more particularly a polishing head for holding the workpiece on a rubber film and a polishing apparatus provided with the polishing head. The polishing head and the polishing apparatus provided with the polishing head that can adjust the polishing profile on the basis of the shape of the workpiece before polishing and can stably obtain good flatness. | 06-09-2011 |
20110130073 | WAFER POLISHING METHOD AND DOUBLE-SIDE POLISHING APPARATUS - The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield. | 06-02-2011 |
20110126814 | BAND SAW CUTTING APPARATUS AND INGOT CUTTING METHOD - The present invention is a band saw cutting apparatus including: a cutting table on which an ingot is horizontally placed; an endless-belt blade provided in a tensioned state between pulleys, the blade having a blade-abrasive-grain portion and a blade base; and a coolant spraying opening for spraying a coolant on the blade, the band saw cutting apparatus cutting the ingot by relatively feeding the blade from above to below, the blade being driven to rotate by rotating the pulleys, wherein the pulleys is configured to be rotatable about an axis thereof in both directions, and a direction of driving to rotate the blade can be changed to cut the ingot. As a result, there is provided a band saw cutting apparatus and an ingot cutting method that can stably secure the quality of the ingot to be cut, increase the lifetime of the blade, and improve the productivity. | 06-02-2011 |
20110124271 | CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS, DOUBLE-SIDE POLISHING APPARATUS USING THE SAME, AND DOUBLE-SIDE POLISHING METHOD - A carrier for a double-side polishing apparatus, including at least: a carrier base placed between upper and lower turn tables, the carrier base having a holding hole therein, the holding hole holds the wafer sandwiched between the upper and lower turn tables. A ring-shaped resin ring disposed along an inner circumference of the holding hole, the resin ring protecting a chamfered portion by making contact with the chamfered portion of the held wafer, wherein the resin ring has a concave groove on an inner circumference thereof, upper and lower tapered surfaces are formed in the concave groove. A double-side polishing apparatus using the carrier and a double-side polishing method that can reduce the generation of taper in a polished surface and improve the flatness while suppressing the generation of an outer peripheral sag of the wafer. | 05-26-2011 |
20110117727 | METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER - According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide. | 05-19-2011 |
20110104995 | CARRIER FOR A DOUBLE-SIDE POLISHING APPARATUS, DOUBLE-SIDE POLISHING APPARATUS USING THIS CARRIER, AND DOUBLE-SIDE POLISHING METHOD - A carrier for a double-side polishing apparatus comprising at least: a metallic carrier base that is arranged between upper and lower turn tables having polishing pads attached thereto and has a holding hole formed therein to hold a wafer sandwiched between the upper and lower turn tables at the time of polishing; and a ring-like resin insert that is arranged along an inner peripheral portion of the holding hole of the carrier base and is in contact with a peripheral portion of the held wafer, wherein an inner peripheral end portion of the holding hole of the carrier base has an upwardly opening tapered surface, an outer peripheral portion of the ring-like insert has a reverse tapered surface with respect to the tapered surface of the holding hole of the carrier base, and the resin insert is fitted in the holding hole of the carrier base through the tapered surface. | 05-05-2011 |
20110104870 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film. | 05-05-2011 |
20110088678 | METHOD FOR RESUMING OPERATION OF WIRE SAW AND WIRE SAW - The present invention is a method for resuming operation of a wire saw comprising the steps of: slicing the workpiece while measuring and recording a displacement amount in an axial direction of each of the grooved rollers and a temperature of the workpiece during the slicing of the workpiece; suspending the slicing of the workpiece; adjusting the displacement amount in an axial direction of each of the grooved rollers and the temperature of the workpiece by supplying temperature-adjusting mediums separately temperature-controlled to the grooved rollers and the workpiece so as to be equal to the displacement amount and temperature recorded upon suspending the slicing of the workpiece respectively, after the suspending, before resuming the slicing of the workpiece; and thereafter resuming the slicing. As a result, there is provided a method for resuming operation of a wire saw and the wire saw that can suppress deterioration of nano-topography of each sliced wafer after processing and can resume to complete the slicing without generation of quality problems of a product wafer, even when the slicing of the workpiece is suspended halfway due to breaking of the wire and the like during the slicing of the workpiece, such as a semiconductor ingot, with the wire saw. | 04-21-2011 |
20110073037 | EPITAXIAL GROWTH SUSCEPTOR - An epitaxial growth susceptor having a pocket that horizontally supports a single-crystal substrate in an epitaxial growth apparatus in which the pocket has an outer peripheral region with which the single-crystal substrate comes into contact to be supported; and a central region that is surrounded by the outer peripheral region and does not come into contact with the single-crystal substrate, one or more through holes that pierce the epitaxial growth susceptor are formed in the central region of the pocket, and the outer peripheral region of the pocket has a tapered shape that is inclined with a tilt angle that is greater than 0° and less than 1° in such a manner that a depth increases toward the central region, and also has a horizontal width that is 3.3% or more of a diameter of the single-crystal substrate to be supported. | 03-31-2011 |
20110070813 | METHOD FOR MANUFACTURING POLISHING HEAD AND POLISHING APPARATUS - A method for manufacturing a polishing head having an annular rigid ring; a rubber film bonded to the rigid ring with uniform tension; a mid plate joined to the rigid ring, forming a space together with the rubber film and the rigid ring; and a mechanism for changing pressure of the space, the method including performing a tensile test on the rubber film according to JIS K6251 before bonding the rubber film to the rigid ring, and selecting the rubber film having a value of 10 MPa or less of an inclination obtained by a linear approximation of a stress-strain curve within a strain value of 5%; and bonding the selected rubber film having a value of 10 MPa or less of the inclination to the rigid ring to manufacture the polishing head. | 03-24-2011 |
20110064896 | MULTI-COLOR MOLDING ARTICLE, MULTICOLOR MOLDING METHOD AND SUBSTRATE STORAGE CONTAINER - A multicolor molding article is integrally formed of first and second molding materials in combination. At least part of the peripheral portion in the boundary between a first molding part of the first molding material and a second molding part of the second molding material is formed with a thin projected piece. The tapering inclined angle of the thin projected piece is specified to range from 5° to 40°. | 03-17-2011 |
20110059679 | METHOD FOR SLICING WORKPIECE - The present invention is a method for slicing a workpiece into wafers by pressing a cylindrical workpiece held with a workpiece holder against a wire row formed by a wire spirally wound between a plurality of wire guides and making the wire travel while supplying a slurry to a contact portion between the workpiece and the wire, wherein the workpiece is sliced with an axis direction of the workpiece inclined with respect to a plane formed by the wire row, after the workpiece is inclined in such a manner that a side far from the wire row plane is a side where the wire guides are to be axially expanded. As a result, there is provided a method for slicing that enable wafers having a good Warp shape to be obtained by precisely slicing a workpiece with a wire saw. | 03-10-2011 |
20110056427 | SINGLE-CRYSTAL MANUFACTURING APPARATUS AND SINGLE-CRYSTAL MANUFACTURING METHOD - A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder. | 03-10-2011 |
20110053470 | WORKPIECE DOUBLE-DISC GRINDING APPARATUS AND WORKPIECE DOUBLE-DISC GRINDING METHOD - A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 μm, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece. | 03-03-2011 |
20110052794 | VAPOR-PHASE GROWTH APPARATUS AND THIN-FILM VAPOR-PHASE GROWTH METHOD - A method for vapor-phase growth of a thin film by introducing into a reaction chamber a raw material gas wherein a dilute impurity gas, having a mixture of impurity gas of which the flow-rate is controlled by a first flow-rate controlling mechanism and diluting gas of which the flow-rate is controlled by a second flow-rate controlling mechanism, of which mixture the flow-rate is controlled by a third flow-rate controlling mechanism is mixed with a main gas of which the flow-rate is controlled by a fourth flow-rate controlling mechanism, and vapor-phase growth is carried out by supplying the raw material gas to the reaction chamber while changing continuously and simultaneously with arithmetic control the flow-rates of the gases flowing through said first, second and third flow-rate controlling mechanisms so that the resistivity distribution is controlled and a required resistivity profile is achieved in the thickness direction of the thin film. | 03-03-2011 |
20110045246 | SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER - A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection. | 02-24-2011 |
20110039476 | DOUBLE-DISC GRINDING APPARATUS AND METHOD FOR PRODUCING WAFER - A double-disc grinding apparatus having at least: a rotatable ring-shaped holder for supporting a sheet-like wafer having a notch for indicating a crystal orientation from an outer circumference side along a radial direction, the holder having a protruding portion to be engaged with the crystal-orientation-indicating notch; and a pair of grindstones for simultaneously grinding both surfaces of the wafer supported by the holder, in which the holder is provided with at least one protruding portion separately from the protruding portion to be engaged with the crystal-orientation-indicating notch, and the both surfaces of the wafer are simultaneously ground by the pair of the grindstones while the wafer is supported and rotated with the at least one protruding portion being engaged with a wafer-supporting notch formed on the wafer. | 02-17-2011 |
20110033958 | METHOD FOR FORMING OXIDE FILM ON SILICON WAFER - The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed. | 02-10-2011 |
20110030612 | SINGLE-CRYSTAL MANUFACTURING APPARATUS - The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved. | 02-10-2011 |
20110028005 | VERTICAL BOAT FOR HEAT TREATMENT AND METHOD FOR HEAT TREATMENT OF SILICON WAFER USING THE SAME - The present invention is a vertical boat for heat treatment having an auxiliary supporting member removably attached to each of supporting parts of a boat body, the auxiliary supporting member on which a substrate to be treated is to be placed, in which the auxiliary supporting member has a guiding member attached to the supporting part and a substrate supporting plate on which the substrate to be treated is to be placed, a hole is formed on an upper surface of the guiding member, the substrate supporting plate is inserted and fitted into the hole of the guiding member so as to be fixed, a height position of a placing surface for the substrate to be treated is higher than a height position of the upper surface of the guiding member, the substrate supporting plate is composed of silicon carbide and the guiding member is composed of quartz. | 02-03-2011 |
20110017125 | SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS - A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof. | 01-27-2011 |
20110001219 | SILICON SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING SILICON SINGLE CRYSTAL OR METHOD FOR PRODUCING SILICON SINGLE CRYSTAL WAFER, AND SEMICONDUCTOR DEVICE - The present invention is a silicon single crystal wafer grown by the Czochralski method, the silicon single crystal wafer in which an wafer entire plane is an N region located outside OSFs which are generated in the form of a ring when thermal oxidation treatment is performed and contains no defect region detected by the RIE process. As a result, a silicon single crystal wafer which belongs to none of a vacancy-rich V region, an OSF region, a Dn region in an Nv region, the Dn region in which a defect detected by the Cu deposition process is generated, and an interstitial silicon-rich I region and can improve the TDDB characteristic which is the time dependent breakdown characteristic of an oxide film more reliably than a known silicon single crystal wafer is provided, and the silicon single crystal wafer is provided under stable production conditions. | 01-06-2011 |
20100327415 | SILICON EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF - Provided is a method for manufacturing a silicon epitaxial wafer by growing an epitaxial layer by placing a silicon substrate on a susceptor. The method includes at least a step of forming a silicon oxide film entirely on the rear surface of the silicon substrate; a step of removing the silicon oxide film formed at least on an edge section of the silicon substrate; and a step of placing the silicon substrate on the susceptor with the silicon oxide film in between. An epitaxial layer is grown on the silicon substrate, while holding the silicon substrate by the susceptor with the silicon oxide film in between. Thus, the silicon epitaxial wafer by which generation of particles can be reduced in a device manufacturing process and a method for manufacturing such silicon epitaxial wafer are provided. | 12-30-2010 |
20100323502 | METHOD FOR MANUFACTURING SOI SUBSTRATE - The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer. | 12-23-2010 |
20100319610 | SINGLE-CRYSTAL MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTAL - According to the present invention, there is provided a single-crystal manufacturing apparatus based on Czochralski method, comprising at least: a main chamber configured to accommodate hot zone components including a crucible; and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt contained in the crucible, wherein the apparatus further comprises: a cooling pipe which is arranged above the crucible and in which a cooling medium is circulated; and a moving mechanism that moves up and down the cooling pipe, and the hot zone components are cooled down by utilizing the moving mechanism to move down the cooling pipe toward the crucible after growth of the single crystal, and a method for manufacturing a single crystal is also provided. As a result, there can be provided the single crystal manufacturing apparatus and the method for manufacturing a single crystal that enable cooling the hot zone components in the main chamber in a short time after pulling a single crystal having a large diameter, e.g., approximately 200 mm or above. | 12-23-2010 |
20100314722 | SOI WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SOI WAFER - The present invention is an SOI wafer comprising at least: an SOI layer; a silicon oxide film; and a base wafer, wherein the SOI layer has a plane orientation of (100), and the base wafer has a resistivity of 100 Ω·cm or more and a plane orientation different from (100). As a result, there is provided the SOI wafer and the manufacturing method thereof that have no complicated manufacturing step, defects on a bonding interface which are not practically a problem in number and a high interface state density (Dit) for trapping carriers on an interface of a BOX layer and the base wafer. | 12-16-2010 |
20100294305 | ULTRASONIC CLEANING APPARATUS AND ULTRASONIC CLEANING METHOD - An ultrasonic cleaning apparatus having at least a cleaning an ultrasonic wave transmitting tank a vibrating plate placed at a bottom portion of the ultrasonic wave transmitting tank, the vibrating plate superposing the ultrasonic waves on the transmitting water with a transducer; and a holding jig for holding the object to be cleaned in the cleaning tank, the apparatus in which the object to be cleaned is ultrasonically cleaned by immersing the object to be cleaned held with the holding jig in the cleaning liquid accommodated in the cleaning tank, putting the cleaning tank into the transmitting water accommodated in the ultrasonic wave transmitting tank, and transmitting the ultrasonic waves superposed with the vibrating plate to the cleaning tank through the transmitting water, the apparatus comprising a transmitting tank oscillating mechanism for oscillating the ultrasonic wave transmitting tank in a horizontal plane. | 11-25-2010 |
20100291838 | POLISHING HEAD AND POLISHING APPARATUS HAVING THE SAME - The present invention is a polishing head in which a rubber film is formed in a boot shape in such a manner that a position where the rubber film is held by a mid plate is distantly positioned from a work holding portion; an end portion of the boot shaped rubber film is formed in O-ring shape so that the rubber film is held by the mid plate with decreasing an area of contact between the mid plate and the rubber film as much as possible. As a result, there is provided a polishing head with rubber chuck method in which an occurrence of a surface defect, such as a scratch, on a surface of the work is suppressed as much as possible and the work can be uniformly and stably polished to the outer periphery. | 11-18-2010 |
20100282036 | CYLINDRICAL GRINDING APPARATUS AND METHOD FOR GRINDING - A cylindrical grinding apparatus grinding a side face of a cylindrical ingot, having a centering means of at least three rollers and an arm holding the rollers. The cylindrical ingot is placed on a table longitudinally, its end faces being held vertically with a pair of clamps. Afterward, the centering means moves backward and forward against the ingot horizontally to bring the rollers into pressure contact with the side face of the ingot while the ingot is rotated about a central axis with a rotation means, and thereafter the ingot is ground with the grinding wheel. The cylindrical grinding apparatus and the method for grinding enable improvement of grinding processing efficiency of the ingot. | 11-11-2010 |
20100276709 | METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SUBSTRATE, COMPOUND SEMICONDUCTOR SUBSTRATE AND LIGHT EMITTING DEVICE - A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer. | 11-04-2010 |
20100270568 | Light Emitting Device and Method of Fabricating the Same - A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side. | 10-28-2010 |
20100264510 | SOI (SILICON ON INSULATOR) STRUCTURE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site. | 10-21-2010 |
20100258103 | METHOD FOR SLICING WORKPIECE BY USING WIRE SAW AND WIRE SAW - The present invention is a wire saw in which a wire is wound around a plurality of grooved rollers, the workpiece is sliced into wafers by causing the wire to travel and pressing the workpiece against the wire while a slurry is supplied to the grooved rollers, the wire saw controlling in such a manner that the workpiece is sliced while a supply temperature of the slurry is increased from the start to the end of slicing the workpiece. As a result, there is provided a wire saw in which Warp of the workpiece to be sliced can be improved by suppressing a decrease in a temperature of the workpiece in the vicinity of the slicing end portion of the workpiece and by making an increase in displacement of the grooved roller during slicing straight, that is, by making the slicing trajectory depicted in the workpiece close to a straight line. | 10-14-2010 |
20100258050 | APPARATUS FOR PRODUCING SINGLE CRYSTAL - The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth. | 10-14-2010 |
20100252017 | METHOD FOR SLICING WORKPIECE BY USING WIRE SAW AND WIRE SAW - The present invention is a wire saw in which a wire for slicing is wound around a plurality of rollers to form a wire row; the wire for slicing is driven axially in a reciprocating direction; a workpiece is sliced simultaneously at a plurality of points arranged in an axial direction by feeding the workpiece against the wire row with the workpiece cut into while a slurry is supplied to the wire for slicing; the wire saw controlling in such a manner that the workpiece is extracted while the wire is caused to travel at a speed of 2 m/min or less at the time of extracting the workpiece from the wire row after slicing the workpiece. As a result, there is provided a wire saw in which the workpiece sliced with the wire row of the wire saw can be extracted from the wire row with a simple structure without a negative influence on its slicing surface. | 10-07-2010 |
20100251958 | EPITAXIAL GROWTH METHOD - The invention provides an epitaxial growth method which is a single wafer processing epitaxial growth method by which at least a single crystal substrate is placed in a reaction chamber with an upper wall having a downward convexity and an epitaxial layer is deposited on the single crystal substrate by introducing raw material gas and carrier gas into the reaction chamber through a gas feed port, in which, after any one of the radius of curvature of the upper wall of the reaction chamber and a difference between an upper end of the gas feed port and a lower end of the upper wall of the reaction chamber in the height direction or both are adjusted in accordance with the flow rate of the carrier gas which is introduced into the reaction chamber through the gas feed port, an epitaxial layer is deposited on the single crystal substrate. As a result, a single wafer processing epitaxial growth method is provided that can obtain the effects, such as an increase in the quality of an epitaxial wafer and an increase in productivity, which are produced by the degree of the flow rate of carrier gas, and deposit an epitaxial layer on a single crystal substrate without deforming the film thickness shape. | 10-07-2010 |
20100233945 | POLISHING HEAD, POLISHING APPARATUS AND METHOD FOR DEMOUNTING WORKPIECE - A polishing head having a disklike carrier in which an annular projecting portion and a carrier-engagement portion are formed in a peripheral portion, a disklike head body in which a head-body-engagement portion is formed outside, a diaphragm for connecting the head body with the carrier, a spacer located between the carrier-engagement portion and the head-body-engagement portion in a part of the carrier-engagement portion and/or the head-body-engagement portion, in which the spacer abuts on the carrier-engagement portion and/or the head-body-engagement portion at the time of lifting the head body so that the workpiece is demounted from the polishing pad by lifting the carrier with it inclined. As a result, there is provided a polishing head in which the workpiece can be easily, safely and surely demounted from the polishing pad by lifting the polishing head holding the workpiece without overhanging the polishing head from the turn table and the like. | 09-16-2010 |
20100229785 | APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL - A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible. | 09-16-2010 |
20100213516 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction). | 08-26-2010 |
20100180880 | Method of improving nanotopography of surface of wafer and wire saw apparatus - The present invention provides a method of improving nanotopography of a surface of a wafer sliced from an ingot by using a wire saw apparatus, including improving straightness of feed of a work feed table which is included in the wire saw apparatus and used for feeding the ingot to a wire row formed by winding a wire around a plurality of rollers, and also provides a wire saw apparatus for slicing an ingot to manufacture a wafer, including: a wire row formed by winding a wire around a plurality of rollers; a work feed table for holding and feeding the ingot to the wire row; and a linear-motion guide for linearly guiding the work feed table, wherein a component having a wavelength of 20 to 200 mm in straightness of feed of the work feed table satisfies a PV value ≦1.0 μm. As a result, there are provided the method of eliminating slice waviness having periodicity to improve the nanotopography of the surface of the wafer and the wire saw apparatus. | 07-22-2010 |
20100171195 | THIN FILM SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME - Provided are a thin film silicon wafer having high gettering capability, a manufacturing method therefor, a multi-layered silicon wafer formed by laminating the thin film silicon wafers, and a manufacturing method therefor. The thin film silicon wafer is manufactured by: forming one or more gettering layers immediately below a device layer which is formed in a vicinity of a front surface of a semiconductor silicon wafer; fabricating a device in the device layer of the semiconductor silicon wafer; and after the device has been fabricated, removing part of the semiconductor silicon wafer from a rear surface thereof to immediately below the gettering layers so as to leave at least one of the gettering layers in place. As a result, the thin film silicon wafer is allowed to have gettering capability even after having been reduced in thickness to be in a thin film form. | 07-08-2010 |
20100163010 | SLICING METHOD AND A WIRE SAW APPARATUS - The present invention is a slicing method and a wire saw apparatus including winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel in a reciprocating direction, in which the ingot is sliced with controlling a temperature of the ingot by supplying a slurry for adjusting an ingot temperature to the ingot independently from the slurry for slicing while the slurry for adjusting an ingot temperature is supplied to the ingot only at the exit side of the wire caused to travel in the reciprocating direction. As a result, there is provided a method and a wire saw apparatus in which rapid cooling of an ingot especially in a time close to end of slicing of the ingot can be alleviated, consequently degradation of a nano-topography can be suppressed, and further high-quality wafers having a uniform thickness can be sliced when slicing the ingot by using a wire saw. | 07-01-2010 |
20100144249 | POLISHING APPARATUS - Provided is a polishing apparatus comprising a lower stool ( | 06-10-2010 |
20100139549 | Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal - The present invention is a quartz glass crucible | 06-10-2010 |
20100132205 | METHOD FOR MEASURING ROTATION ANGLE OF BONDED WAFER - The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided. | 06-03-2010 |
20100129993 | METHOD FOR MANUFACTURING SOI WAFER - The present invention provides a method for manufacturing an SOI wafer wherein an HCl gas is mixed in a reactive gas at a step of forming a silicon epitaxial layer on an entire surface of an SOI layer of the SOI wafer having an oxide film on a terrace portion. As a result, it is possible to provide the method for manufacturing an SOI wafer that can easily grow the silicon epitaxial layer on the SOI layer of the SOI wafer having the oxide film on the terrace portion, suppress warpage of the SOI wafer to be manufactured, reduce generation of particles even at subsequent steps, e.g., device manufacture, and decrease a cost for manufacturing such an SOI wafer. | 05-27-2010 |
20100129990 | SUSCEPTOR AND METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER - Provided is a susceptor | 05-27-2010 |
20100129761 | WAFER SUPPORT JIG, VERTICAL HEAT TREATMENT BOAT INCLUDING WAFER SUPPORT JIG, AND METHOD FOR MANUFACTURING WAFER SUPPORT JIG - The present invention provides a wafer support jig having at least a support surface on which a treatment target wafer is mounted and supported when performing a heat treatment, wherein skewness R | 05-27-2010 |
20100128253 | METHOD FOR DETECTING THE DIAMETER OF A SINGLE CRYSTAL AND SINGLE CRYSTAL PULLING APPARATUS - The invention is a method for detecting the diameter of a single crystal grown by the Czochralski method, wherein the diameter of a single crystal is detected by both a camera and a load cell, the diameter detected by the camera is corrected based on a difference between the diameter detected by the camera and the diameter calculated by the load cell and a correction coefficient α obtained in advance according to a growth rate of the single crystal, and a value obtained by the correction is set as the diameter of the single crystal, and a single crystal pulling apparatus including both a camera and a load cell for detecting the diameter of a single crystal to be pulled upwardly. As a result, it is possible to improve the measurement accuracy of the diameter of a large-diameter, heavy crystal and achieve the enhancement of yields and a reduction in variations in quality. | 05-27-2010 |
20100126409 | Method of Manufacturing Single Crystal - This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils ( | 05-27-2010 |
20100126408 | SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS - The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor. This allows for provision of the silicon single crystal growth method and the pulling apparatus therefor, capable of generating appropriately crystallized layers, i.e., devitrification at an inner wall surface of a quartz crucible during a silicon single crystal growth process, and capable of simultaneously controlling a Li concentration of the silicon single crystal, to prevent generating dislocations in the single crystal growth process to thereby improve a yield and productivity of single crystal, while simultaneously restricting variances of thicknesses of those oxide films of sliced wafers which oxide films are to be formed by subsequent thermal oxidation treatments. | 05-27-2010 |
20100120223 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided. | 05-13-2010 |
20100116195 | METHOD FOR GROWING SILICON SINGLE CRYSTAL - The present invention provides a method for growing a carbon-doped silicon single crystal that grows a silicon single crystal from a raw material melt in a crucible having carbon added therein by the Czochralski method, wherein an extruded material or a molded material is used as a dopant for adding the carbon to a raw material in the crucible. As a result, there can be provided the method for growing a carbon-doped silicon single crystal, by which the carbon can be easily doped in the silicon single crystal at low cost and a carbon concentration in the silicon single crystal can be accurately controlled in a silicon single crystal pulling up process by the Czochralski method. | 05-13-2010 |
20100112824 | METHOD FOR FORMING SILICON OXIDE FILM OF SOI WAFER - The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, heat treatment is additionally performed (a process (B)) in a non-oxidizing atmosphere at a temperature higher than the temperature at which the thermal oxidation treatment was performed, whereby a silicon oxide film is formed on the front surface of an SOI layer. This provides a method for forming a silicon oxide film of an SOI wafer, the method that can prevent an SOI wafer from being warped after thermal oxidation treatment even when an SOI wafer having a thick oxide film on the back surface is used and a silicon oxide film for forming a device is formed by thermal oxidation on the front surface on the SOI layer side, and can reduce exposure failure and adsorption failure caused by warpage of the SOI wafer and enhance yields of device fabrication. | 05-06-2010 |
20100112781 | METHOD FOR MANUFACTURING SOI WAFER - The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p | 05-06-2010 |
20100105191 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER - The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region. | 04-29-2010 |
20100090314 | FINAL POLISHING METHOD FOR SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER - The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method. | 04-15-2010 |
20100089377 | SLICING METHOD AND WIRE SAW APPARATUS - The invention is directed to a method for slicing an ingot in the form of a wafer by winding a wire around a plurality of grooved rollers and pressing the wire against the ingot while making the wire travel and supplying slicing slurry to the grooved rollers, in which when the ingot is sliced, an amount of displacement of the ingot changing in an axial direction is measured and an amount of axial displacement of the grooved rollers is controlled so as to correspond to the measured amount of axial displacement of the ingot, and thereby, the ingot is sliced while controlling a relative position of the wire relative to an entire length of the ingot changing in the axial direction. As a result, a slicing method and a wire saw apparatus are provided that can perform slicing in such a way that a Bow or a Warp in a wafer obtained by slicing can be reduced, for example, by controlling a slicing path built into an ingot so that, in particular, the slicing path becomes flattened. | 04-15-2010 |
20100089309 | METHOD FOR PULLING SILICON SINGLE CRYSTAL - The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer. | 04-15-2010 |
20100064964 | METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INSULATING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR CONTROLLING THEREOF - There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member | 03-18-2010 |
20100048034 | VERTICAL BOAT FOR HEAT TREATMENT AND HEAT TREATMENT METHOD OF SEMICONDUCTOR WAFER USING THEREOF - According to the present invention, a vertical boat for heat treatment having at least a plurality of supporting columns, a pair of plate members, each coupled to each of the both ends of each supporting column, in which in each of the supporting columns a plurality of supporting parts for horizontally supporting substrates to be treated are formed and an auxiliary supporting member to place each of the substrates to be treated is removably attached to each of the plurality of supporting parts, the vertical boat for heat treatment wherein the auxiliary supporting member is adjusted for each supporting part with respect to the inclination of a surface for placing the substrates to be treated depending on the shape of each supporting part by processing a surface for attaching to the supporting part, or by interposing a spacer between the supporting part and the auxiliary supporting member is provided. Thereby, the vertical boat for heat treatment which can prevent generation of slip dislocation due to the inclination of each supporting part during the heat treatment of the substrate to be treated in a vertical furnace for heat treatment and which is inexpensive and can be easily improved can be provided. | 02-25-2010 |
20100044829 | METHOD FOR PRODUCING SOI SUBSTRATE AND SOI SUBSTRATE - The present invention is a method for producing an SOI substrate including the steps of: preparing a bond wafer and a base wafer which are composed of single crystal silicon wafers; forming an oxide film on a surface of at least one of the bond wafer and the base wafer so that a thickness of a buried oxide film after bonding becomes 3 μm or more; bonding the bond wafer and the base wafer via the oxide film; performing a law-temperature heat treatment at a temperature of 400° C. or more and 1000° C. or less to the bonded substrate; thinning the bond wafer to be an SOI layer; and increasing bonding strength by performing a high-temperature heat treatment at a temperature exceeding 1000° C. Thus, a method for producing an SOI substrate by which generation of slip dislocations is suppressed and an SOI substrate having a high-quality SOI layer can be obtained, for producing a SOI layer in which the thickness of a buried oxide film is thick as 3 μm or more by a bonding method, etc. are provided. | 02-25-2010 |
20100037881 | Slicing method - The present invention provides a slicing method comprising winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, wherein a supply temperature of the slurry for slicing is controlled, and slicing is performed in such a manner that the supply temperature of the slurry for slicing and a temperature of the ingot become at least 30° C. or above at end of slicing the ingot. As a result, there is provided the slicing method that can alleviate precipitous cooling of an ingot in the time close to end of slicing the ingot and thereby suppress production of a nano-topography when slicing the ingot by using a wire saw. | 02-18-2010 |
20100032688 | LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A transparent conductive semiconductor substrate | 02-11-2010 |
20100031869 | System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System - The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means | 02-11-2010 |
20100022038 | Method for evaluating semiconductor wafer - The present invention provides a method for evaluating a semiconductor wafer, including at least: forming an oxide film on a front surface of a semiconductor wafer; partially removing the oxide film to form windows at two positions; diffusing a dopant having a conductivity type different from a conductivity type of a semiconductor as an evaluation target through the windows at the two positions and forming diffused portions in the semiconductor as the evaluation target to form PN junctions; and performing leakage current measurement and/or DLTS measurement in a part between the two diffused portions to evaluate the semiconductor wafer. As a result, there is provided the method for evaluating a semiconductor wafer that can perform junction leakage current measurement or DLTS measurement to easily evaluate a quality of the inside of the semiconductor wafer. In particular, there can be provided the method that can evaluate not only a PW or an EPW but also the inside of an SOI layer of an SOI wafer. | 01-28-2010 |
20100019796 | METHOD FOR EVALUATING SILICON WAFER - The present invention is a method for evaluating a silicon wafer by measuring, after fabricating a MOS capacitor by forming an insulator film and one or more electrodes sequentially on a silicon wafer, a dielectric breakdown characteristic of the insulator film by applying an electric field from the electrodes thus formed to the insulator film, the method in which the silicon wafer is evaluated at least by setting an area occupied by all the electrodes thus formed to 5% or more of an area of a front surface of the silicon wafer when the one or more electrodes are formed. This provides an evaluation method that can detect a defect by a simple method such as the TDDB method with the same high degree of precision as that of the DSOD method. | 01-28-2010 |
20100015817 | VERTICAL HEAT TREATMENT BOAT AND HEAT TREATMENT METHOD FOR SEMICONDUCTOR WAFER - The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally supporting the processing target substrate, support auxiliary members on which the processing target substrate is mounted being detachably attached to the four or more support portions, respectively, wherein flatness obtained from all surfaces of the respective support auxiliary members on which the processing target substrate is mounted is adjusted by adjusting thicknesses of the support auxiliary members or interposing spacers between the support portions and the support auxiliary members in accordance with respective shapes of the four or more support portions. As a result, it is provided the vertical heat treatment boat and a heat treatment method for a semiconductor wafer that can readily improve flatness in support of the processing target substrate and effectively prevent occurrence of slip dislocation when performing a heat treatment to the processing target substrate such as a semiconductor wafer by using a vertical heat treatment furnace. | 01-21-2010 |
20100003803 | MANUFACTURING METHOD OF STRAINED SI SUBSTRATE - According to the present invention, there is provided a manufacturing method of a strained Si substrate including at least steps of: forming a lattice-relaxed SiGe layer on a silicon single crystal substrate; flattening a surface of the SiGe layer by CMP; and forming a strained Si layer on the surface of the flattened SiGe layer, wherein the method comprises steps of: subjecting the surface of the SiGe layer to SC1 cleaning, before forming the strained Si layer on the lattice-relaxed SiGe layer surface that is flattened; heat-treating the substrate having the SiGe layer after being subjected to SC1 cleaning in a hydrogen-containing atmosphere at 800° C. or higher; immediately forming a protective Si layer on the SiGe layer surface on the heat-treated substrate, without lowering the temperature below 800° C. after the heat treatment; and forming the strained Si layer on the surface of the protective Si layer at a temperature lower than the temperature of forming the protective Si layer. Thereby, a manufacturing method of a strained Si substrate having low surface roughness, threading dislocation density and low particle level can be provided. | 01-07-2010 |
20100001376 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE AND NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE - The present invention provides a method for manufacturing a nitride semiconductor self-supporting substrate and a nitride semiconductor self-supporting substrate manufactured by this manufacturing method, the method including at least: a step of preparing a nitride semiconductor self-supporting substrate serving as a seed substrate; a step of epitaxially growing the same type of nitride semiconductor as the seed substrate on the seed substrate; and a step of slicing an epitaxially grown substrate subjected to the epitaxial growth into two pieces in parallel to an epitaxial growth surface. As a result, there is provided a method for manufacturing a large-diameter nitride semiconductor self-supporting substrate having an excellent crystal quality and small warp with good productivity at a low cost, etc. | 01-07-2010 |
20090324896 | Chamfering Apparatus For Silicon Wafer, Method For Producing Silicon Wafer, And Etched Silicon Wafer - The invention is directed to a chamfering apparatus for a silicon wafer to chamfer outer edge of a silicon wafer by using a chamfering grindstone, the chamfering apparatus including at least: a holder holding and rotating a silicon wafer; a chamfering grindstone chamfering the outer edge of the silicon wafer held by the holder; and a control apparatus for controlling a chamfered shape by controlling a relative position of the outer edge of the silicon wafer and the chamfering grindstone by numerical control, wherein the control apparatus controls and changes the relative position of the outer edge of the silicon wafer and the chamfering grindstone at the time of chamfering depending on the circumferential position of the silicon wafer held by the holder, a production method, and an etched silicon wafer. This provides a silicon wafer chamfering apparatus, production method and an etched silicon wafer that can suppress variations in the cross-sectional shape dimensions of a chamfered portion after an etching process. | 12-31-2009 |
20090305615 | Carrier for double-side polishing apparatus, double-side polishing apparatus using the same, and double-side polishing method - The present invention provides a carrier for double-side polishing apparatus which is set between upper and lower turn tables having polishing pads attached thereto and has a holding hole in which a semiconductor wafer sandwiched between the upper and lower turn tables is held at the time of polishing in a double-side polishing apparatus, wherein a material of the carrier is titanium, and surface roughness of the titanium carrier is 0.14 μm or above in terms of Ra. As a result, there can be provided the carrier for double-side polishing apparatus, a double-side polishing apparatus, and a double-side polishing method that can stably and efficiently produce a high-quality wafer having reduced wafer peripheral sag and a high flatness at the time of double-side polishing of a semiconductor wafer. | 12-10-2009 |
20090305485 | Method For Producing Semiconductor Substrate - The present invention is a method for producing a semiconductor substrate, including steps of forming a SiGe gradient composition layer and a SiGe constant composition layer on a Si single crystal substrate, flattening a surface of the SiGe constant composition layer, removing a natural oxide film on the flattened surface of the SiGe constant composition layer, and forming a strained Si layer on the surface of the SiGe constant composition layer from which the natural oxide film has been removed, wherein the formation of the SiGe gradient composition layer and the formation of the SiGe constant composition layer are performed at a temperature T | 12-10-2009 |
20090302335 | Method of Fabricating Light Emitting Device and Compound Semiconductor Wafer and Light Emitting Device - A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section | 12-10-2009 |
20090291623 | Polishing head and polishing apparatus - The present invention is a polishing head provided with an annular rigid ring, a rubber film bonded to the rigid ring with a uniform tension, a mid plate joined to the rigid ring and forming a space portion together with the rubber film and the rigid ring, and an annular template provided concentrically with the rigid ring in a peripheral portion on a lower face part of the rubber film and having an outer diameter larger than an inner diameter of the rigid ring, in which a pressure of the space portion can be changed by a pressure adjustment mechanism, a back face of a work is held on the lower face part of the rubber film, and a surface of the work is brought into sliding contact with the polishing pad attached onto a turn table for performing polishing, and an inner diameter of the template is smaller than an inner diameter of the rigid ring, and a ratio between an inner diameter difference between the rigid ring and the template and a difference between the inner diameter and an outer diameter of the template is 26% or more and 45% or less. Thereby, a polishing head and the like that can obtain constant flatness stably can be provided. | 11-26-2009 |
20090288530 | Slicing method and method for manufacturing epitaxial wafer - There is provided a slicing method including winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, in which a test of slicing the ingot while supplying the slurry for slicing to the grooved rollers and controlling a supply temperature thereof is previously conducted to examine a relationship between an axial displacement of the grooved rollers and a supply temperature of the slurry for slicing, a supply temperature profile of the slurry for slicing is set based on the relationship between an axial displacement of the grooved rollers and a supply temperature of the slurry for slicing, and the slurry for slicing is supplied based on the supply temperature profile to slice the ingot while controlling an axial displacement of the grooved rollers and to uniform Sori of all wafers to be sliced out in one direction. As a result, the slicing method that can easily perform slicing with excellent reproducibility while uniforming Sori of all wafers in one direction at the time of slicing an ingot by using a wire saw is provided. | 11-26-2009 |
20090280620 | Method for Producing Soi Wafer - The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×10 | 11-12-2009 |
20090275154 | Method of fabricating light emitting device - A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof. | 11-05-2009 |
20090258474 | Method for producing SOl substrate - Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate. | 10-15-2009 |
20090253352 | Slicing Method - The present invention provides a slicing method comprising winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, wherein a cooling speed of the ingot when a slicing depth is equal to or above ⅔ of a diameter is controlled to perform slicing by supplying a slurry for adjusting an ingot temperature to the ingot independently from the slurry for slicing while controlling a supply temperature only in a period from the moment that the slicing depth of the ingot reaches at least ⅔ of the diameter to end of slicing. As a result, the slicing method is provided, in which rapid cooling of the ingot in the time close to end of slicing the ingot can be alleviated when a wire saw is used to slice the ingot, and generation of a nano-topography can be thereby suppressed and further high quality wafers having a uniform thickness are obtained by slicing. | 10-08-2009 |
20090252942 | Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer - The present invention provides a method for manufacturing an epitaxial wafer by supplying a raw material gas onto a silicon wafer to perform vapor-phase growth of an epitaxial layer, wherein a thickness of the epitaxial layer that is formed at a peripheral portion of the silicon wafer is controlled by controlling a growth rate and/or a growth temperature of the epitaxial layer that is subjected to vapor-phase growth. As a result, there is provided the method that enables manufacturing an epitaxial wafer having a small roll-off value by controlling a thickness of an epitaxial layer near the outermost periphery at the time of epitaxial growth. | 10-08-2009 |
20090251135 | Method for Evaluating Soi Wafer - The present invention relates to a method for evaluating the SOI wafer in a method for evaluating an SOI wafer in which a sheet resistance of a buried diffusion layer of an SOI wafer that has at least an SOI layer on an insulator layer and has a buried diffusion layer whose impurity concentration is higher than other region of the SOI layer in an interface area with the insulator layer of the SOI layer is evaluated, the method including the steps of measuring a sheet resistance of the whole SOI layer or the whole SOI wafer, and estimating the sheet resistance of the buried diffusion layer by assuming respective layers that compose the SOI wafer to be resistors connected in parallel and converting the measured result of the sheet resistance measurement. As a result of this, there is provided a method for evaluating the SOI wafer that can directly measure the SOI wafer itself to be the product to thereby evaluate the sheet resistance of the buried diffusion layer thereof, without fabricating a monitor wafer. | 10-08-2009 |
20090249995 | Apparatus and method for producing single crystals - The present invention provides an apparatus for producing single crystals according to the Czochralski method, the apparatus including a chamber that can be divided into a plurality of chambers; at least one of the plurality of divided chambers having a circulating coolant passage in which a circulating coolant for cooling the chamber circulates; and measuring means that respectively measure an inlet temperature, an outlet temperature, and a circulating coolant flow rate of the circulating coolant in the circulating coolant passage; the apparatus further including a calculating means that calculates a quantity of heat removed from the chamber and/or a proportion of the quantity of removed heat, from the measured values of the inlet temperature, outlet temperature, and circulating coolant flow rate; and a pulling rate control means that controls a pulling rate of the single crystal based on the resulting quantity of removed heat and/or the resulting proportion of the quantity of removed heat. The invention also provides a method for producing single crystals using the apparatus. Thus, an apparatus and a method for producing single crystals are provided for producing single crystals while easily stabilizing the crystal quality. | 10-08-2009 |
20090243111 | SEMICONDUCTOR SUBSTRATE, ELECTRODE FORMING METHOD, AND SOLAR CELL FABRICATING METHOD - The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method. | 10-01-2009 |
20090242843 | Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method - A method for manufacturing a silicon wafer having a defect-free region in a surface layer, in which at least only a surface layer region to a predetermined depth from a front surface of a silicon wafer to be processed is subjected to heat treatment at a temperature of not less than 1100 degrees C. for not less than 0.01 msec to not more than 1 sec, to thereby make the surface layer defect-free. As a result of this, there is provided a method for manufacturing a silicon wafer, in which a DZ layer without generation of crystal defects from the front surface to a constant depth can be uniformly formed, and oxide precipitates having a steep profile inside the wafer can be secured and controlled with a high degree of accuracy. | 10-01-2009 |
20090232359 | METHOD FOR DETERMINING DISTANCE BETWEEN REFERENCE MEMBER AND MELT SURFACE, METHOD FOR CONTROLLING LOCATION OF MELT SURFACE USING THE SAME, AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL - The present invention is a method for determining a relative distance between a reference member placed above a melt surface and the melt surface upon pulling a silicon single crystal out of a raw material melt in a crucible by a CZ method characterized by at least: pulling the silicon single crystal applying a magnetic field; taking a picture of a real image of the reference member and a mirror image of the reference member reflected on the melt surface with a detector; processing the picture taken of the real image and the mirror image of the reference member as different pictures by separating the picture taken; and calculating the relative distance between the real image and the mirror image of the reference member from the processed pictures to determine the relative distance between the reference member and the melt surface. | 09-17-2009 |
20090203212 | Surface Grinding Method and Manufacturing Method for Semiconductor Wafer - The present invention provides a surface grinding method for a semiconductor wafer, which performs surface grinding with respect to a semiconductor wafer sliced into a thin plate shape, wherein at least a cleaning process for removing a heavy metal is performed before carrying out surface grinding of the semiconductor wafer, and a surface grinding process is carried out after performing the cleaning process. As a result, there are provided the surface grinding method and a manufacturing method for a semiconductor wafer, which can effectively reduce a contaminant, which has adhered to a surface of the semiconductor wafer, e.g., a heavy metal such as Cu. | 08-13-2009 |
20090203167 | Method for Manufacturing Bonded Substrate - The present invention provides a method for manufacturing a bonded substrate that is a method for manufacturing a bonded substrate where an active layer wafer is bonded to a support substrate wafer, comprising: a first step of providing a groove on an inner side on a surface of the active layer wafer along an outer peripheral portion over an entire circumference; a second step of determining a surface where the groove is formed as a bonding surface and bonding the active layer wafer to the support substrate wafer; and a third step of reducing a film thickness of the active layer wafer and removing an unbonded portion on an outer side of the groove of the active layer wafer. As a result, there is provided the method for manufacturing a bonded substrate that can simplify processes, avoid breakage, cracks, or particle generation, and manage a shape of an edge portion of an active layer wafer when reducing a film thickness of the active layer wafer. | 08-13-2009 |
20090197396 | Method for Producing Silicon Wafer - The present invention provides a method for producing a silicon wafer at least including a step of performing RTA heat treatment with respect to a silicon wafer in an atmospheric gas, wherein nitrogen gas is used as the atmospheric gas, which is mixed with oxygen at a concentration of less than 100 ppm so as to perform the heat treatment. Hereby a method for producing a high-quality wafer can be provided, where the RTA heat treatment subject to the silicon wafer can be performed at a low temperature or over a short period of time, so that generation of slip dislocation of the silicon wafer can be suppressed, and at the same time vacancies can be implanted inside the silicon wafer without using NH | 08-06-2009 |
20090194151 | Semiconductor substrate, method for forming electrode, and method for fabricating solar cell - The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance. | 08-06-2009 |
20090170406 | Wafer Production Method - The present invention is a wafer production method at least comprising a chamfering step of chamfering a wafer sliced from an ingot using a grindstone for chamfering, and a step of obtaining a product wafer thinner than the chamfered wafer by performing at least one or more than one of the following processes on the chamfered wafer: flattening, etching, and polishing, the method at least comprising a correction step of chamfering a dummy wafer equivalent in thickness to the product wafer, measuring the chamfered dummy wafer for its chamfered shape, and correcting the shape of the grindstone for chamfering based on the measured chamfered shape of the dummy wafer, at least before the chamfering step, thereby chamfering the wafer sliced from the ingot using the grindstone for chamfering having its shape corrected. Thus, it is possible to provide a wafer production method allowing a product wafer with a desired chamfered shape to be obtained in a short period of time. | 07-02-2009 |
20090170285 | Method for manufacturing bonded wafer - The present invention provides a method for manufacturing a bonded wafer by an ion implantation delamination method, the method including at least the steps of bonding a base wafer with a bond wafer having a microbubble layer formed by ion implantation, delaminating the wafers along the micro bubble layer as a boundary, and removing a periphery of a thin film formed on the base wafer by the delamination step, wherein at least the thin-film periphery removal step after the delamination step is performed by dry etching that supplies an etching gas from a nozzle, and the dry etching is performed by adjusting an inner diameter of the gas-jetting port of the nozzle, and a distance between the gas-jetting port of the nozzle and a surface of the thin film. As a result of this, there is provided the method for manufacturing the bonded wafer, in which removal of the thin-film periphery can be easily performed and a removal width is also reproducibly obtained well in the thin-film periphery removal step, and degradation in quality of the thin film can be effectively prevented. | 07-02-2009 |
20090163119 | Method for Machining Chamfer Portion of Semiconductor Wafer and Method for Correcting Groove Shape of Grinding Stone - According to the present invention, in a method for subjecting a roughly ground chamfer portion of a semiconductor wafer to helical grinding by relatively inclining the wafer and a second grinding stone to perform precise grinding, an edge portion of a discoid truer is formed into a vertically asymmetrical groove shape of a first grinding stone by using the first grinding stone having a vertically asymmetrical groove formed on a periphery thereof to grind the edge portion of the truer by the groove of the first grinding stone without being relatively inclined, a groove is formed on a periphery of the second grinding stone by relatively inclining the truer and the second grinding stone to subject the second grinding stone to helical grinding, and the chamfer portion of the wafer is precisely ground based on helical grinding by relatively inclining the semiconductor wafer with respect to a direction of the groove formed on the periphery of the second grinding stone. As a result, there is provided the method for machining a chamfer portion of the semiconductor wafer, which can machine the chamfer portion of the wafer into a vertically symmetrical shape when subjecting the chamfer portion of the semiconductor wafer to helical grinding, e.g. a resin grinding stone and the like. | 06-25-2009 |
20090124175 | Double-Side Polishing Method for Wafer - There is provided a double-side polishing method for a wafer of sandwiching a wafer held in a carrier between upper and lower turn tables each having a polishing pad attached thereto and simultaneously polishing both surfaces of the wafer while supplying a slurry to a space between the upper and lower turn tables from a plurality of slurry supply holes provided in the upper turn table, wherein a polishing amount at an outer peripheral portion of the wafer to be polished is adjusted and outer peripheral sag of the wafer is suppressed by supplying the slurry in such a manner that an amount of the slurry supplied from the slurry supply holes provided on an outer side relative to the center of rotation of the upper turn table becomes larger than an amount of the slurry supplied from the slurry supply holes provided on an inner side relative to the same at the time of polishing both the surfaces of the wafer. As a result, the double-side polishing method which can suppress occurrence of the outer peripheral sag of the wafer when the wafer is subjected to double-side polishing can be provided. | 05-14-2009 |
20090117706 | Manufacturing Method of SOI Wafer and SOI Wafer Manufactured by This Method - There is provided a method of manufacturing an SOI wafer by an ion implantation delamination method, comprising at least: forming an oxide film on a surface of at least one of a base wafer and a bond wafer functioning as an SOI layer; implanting at least one of a hydrogen ion and a rare gas ion from a surface of the bond wafer to form an ion implanted layer; subsequently bringing the bond wafer into close contact with the base wafer via the oxide film; performing a heat treatment to cause delamination in the ion implanted layer so that the SOI layer is formed; then conducing a heat treatment in an oxidizing atmosphere to form an oxide film on the surface of the SOI layer; subsequently removing the oxide film by etching; then cleaning the surface of the SOI layer by using ozone water; and polishing the same. As a result, in an ion implantation delamination method, a method of manufacturing a high-quality SOI wafer which can remove a damaged layer and surface roughness remaining on the SOI layer surface after delamination while maintaining film thickness uniformity of the SOI layer is provided. | 05-07-2009 |
20090111245 | Method for manufacturing bonded wafer - The present invention provides a method for manufacturing a bonded wafer comprising steps of forming an oxide film on at least a surface of a base wafer or a surface of a bond wafer; bringing the base wafer and the bond wafer into close contact via the oxide film; subjecting these wafers to a heat treatment under an oxidizing atmosphere to bond the wafers together; grinding and removing the outer periphery of the bond wafer so that the outer periphery has a predetermined thickness; subsequently removing an unbonded portion of the outer periphery of the bond wafer by etching; and then thinning the bond wafer so that the bond wafer has a desired thickness, wherein the etching is conducted by using a mixed acid at 30° C. or less at least comprising hydrofluoric acid, nitric acid, and acetic acid. Thus there is provided a method for manufacturing a bonded wafer by which unbonded portions of the outer periphery of the bond wafer are removed with a high selectivity ratio (R | 04-30-2009 |
20090084373 | Method of Manufacturing (110) Silicon Wafer - The present invention provides a method for slicing a silicon single crystal ingot having a plane direction (110) by a wire saw to manufacture a (110) silicon wafer, wherein slicing is performed in such a manner that each angle formed between a traveling direction of a wire in the wire saw and a [−112] direction and a [1-12] direction in the (110) silicon single crystal ingot or a direction crystallographically equivalent to the directions exceeds 30°. As a result, the method for manufacturing the (110) silicon wafer that can suppress occurrence of breaking at the time of slicing and improve a production yield ratio can be provided. | 04-02-2009 |
20090057840 | WAFER MANUFACTURING METHOD, POLISHING APPARATUS, AND WAFER - The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof. | 03-05-2009 |
20090053978 | Double-Disc Grinding Machine, Static Pressure Pad, and Double-Disc Grinding Method Using the Same for Semiconductor Wafer - The present invention is a static pressure pad for supporting both sides of a raw wafer without contact by a static pressure of a fluid supplied to the both sides of the raw wafer in a double-disc grinding machine for a semiconductor wafer, wherein in patterns of lands to be banks of surrounding pockets formed on a surface side of supporting the raw wafer of the static pressure pad, an outer circumferential land pattern required to support the raw wafer is a concentric circle with respect to a rotation center of the raw wafer, and a land pattern inside the outer circumferential land pattern is a non-concentric circle with respect to the rotation center of the raw wafer and asymmetrical with respect to all the straight lines which bisect the static pressure pad. With this static pressure pad, there is provided the double-disc grinding machine and a double-disc grinding method for the semiconductor wafer, which can minimize a “middle ring” of average components obtained by averaging a nanotopography of the wafers after the double-disc grinding. | 02-26-2009 |
20090042364 | Method For Manufacturing Soi Wafer and Soi Wafer - The present invention provides a method for manufacturing an SOI wafer in which a thickness of an SOI layer is increased by growing an epitaxial layer on the SOI layer of the SOI wafer having an oxide film and the SOI layer formed on a base wafer, wherein the epitaxial growth is performed in such a manner that a reflectivity of a surface of the SOI wafer on which the epitaxial layer is grown in a wavelength region of a heating light at the start of the epitaxial growth falls within the range of 30% to 80%. As a result, in the method for manufacturing the SOI wafer in which a thickness of the SOI layer is increased by growing the epitaxial layer on the SOI layer of the SOI wafer having the oxide film and the SOI layer formed on the base wafer, a method for manufacturing a high-quality SOI wafer with less slip dislocation and others is provided. | 02-12-2009 |