| Shin-Etsu Chemical Co.,Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20100289115 | SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE - An oxide film having a thickness “t | 11-18-2010 |
| 20100099044 | Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film - There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching. | 04-22-2010 |
| 20090202947 | Positive resist composition and patterning process using the same - The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process. | 08-13-2009 |
| 20080254597 | Method for manufacturing SOI substrate - A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate | 10-16-2008 |
