SHARP KABUSHIKI KAISHI Patent applications |
Patent application number | Title | Published |
20140103797 | LIGHT-EMITTING DEVICE - The light-emitting device includes: a substrate which has a single layer structure in which a conductive member is partially provided on a surface of the substrate; a plurality of light-emitting elements which are directly provided on the surface of the substrate so as to be electrically connected with the conductive member; a first light reflection resin layer; a second light reflection resin layer which is provided in a looped shape on the surface of the substrate so as to surround an area in which the plurality of light-emitting elements are provided; and a sealing resin which covers the plurality of light-emitting elements. In the area in which the plurality of light-emitting elements are provided, the conductive member is covered with the first light reflection resin layer, the conductive member, which is provided under the second light reflection resin layer, is covered with the second light reflection resin layer directly, and a printed resistor, which is provided under the second light reflection resin layer, is covered with the second light reflection resin layer via the first light reflection resin layer. This makes it possible to provide the light-emitting device which (i) reduces absorption of light so as to achieve excellent light extraction efficiency, and (ii) is highly reliable. | 04-17-2014 |
20130257263 | ELECTRON EMITTING ELEMENT, ELECTRON EMITTING DEVICE, LIGHT EMITTING DEVICE, IMAGE DISPLAY DEVICE, AIR BLOWING DEVICE, COOLING DEVICE, CHARGING DEVICE, IMAGE FORMING APPARATUS, ELECTRON-BEAM CURING DEVICE, AND METHOD FOR PRODUCING ELECTRON EMITTING ELEMENT - An electron emitting element of the present invention includes an electron acceleration layer between an electrode substrate and a thin-film electrode. The electron acceleration layer includes a binder component in which insulating fine particles and conductive fine particles are dispersed. Therefore, the electron emitting element of the present invention is capable of preventing degradation of the electron acceleration layer and can efficiently and steadily emit electrons not only in vacuum but also under the atmospheric pressure. Further, the electron emitting element of the present invention can be formed so as to have an improved mechanical strength. | 10-03-2013 |
20110293122 | DISPLAY SYSTEM, DISPLAY CONTROL METHOD AND COMPUTER PROGRAM - It is expected to provide a display system, display control method and computer program for effectively outputting sound with plural display apparatuses in a two dimensional array. | 12-01-2011 |
20100076832 | VIRTUAL COUPON SERVICE SYSTEM - A virtual coupon service system is provided. The virtual coupon service system includes: an information acquiring unit acquiring member identification information of a member who wants to purchase a product for which the coupon is valid, and coupon information regarding the product; an information registering unit mapping the member identification information to the coupon information, and registering the result of the mapping; a coupon service providing unit acquiring the member identification information and a product code of the product, determining whether the member identification information is registered with the information registering unit, determining whether at least one coupon information mapped to the member identification information is associated with the product code, if the member identification information is registered in the information registering unit, providing a coupon service if the at least one coupon information includes the product code. | 03-25-2010 |
20090269907 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness. | 10-29-2009 |