| SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES Patent applications |
| Patent application number | Title | Published |
|---|
| 20110039685 | TRANSPARENT ALUMINA CERAMICS WITH ORIENTED GRAINS AND PREPARATION METHOD THEREOF - A kind of transparent alumina ceramics is disclosed herein, the optical axes of all or part of the crystal grains of the transparent alumina ceramics are arranged in a direction, which makes the transparent alumina ceramics have orientation. | 02-17-2011 |
| 20110039101 | ELECTROSPUN FIBER TUBULAR MATERIAL AND PREPARATION METHOD THEREOF - A method of preparing electrospun fiber tubular material comprises: using single metal rod template or two-dimensional or three-dimensional metal rod combined-template which has cross structure and is composed of the said single metal rod templates to prepare tubular electrospun fiber material by controlling electrospinning process parameters. The method could control the macro-structure and micro-structure of the tubular electrospun fiber material by adjusting template parameters. The tubular electrospun fiber material obtained from the method could be used in such fields as biomedical material, tissue engineering scaffold, photo-electric material, filtering material and sensor etc. | 02-17-2011 |
| 20110008927 | METHOD FOR PREPARING LIGHT ABSORPTION LAYER OF COPPER-INDIUM-GALLIUM-SULFUR-SELENIUM THIN FILM SOLAR CELLS - A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained. | 01-13-2011 |
| 20100275963 | THERMOELECTRIC MATERIAL INCLUDING A MULTIPLE TRANSITION METAL-DOPED TYPE I CLATHRATE CRYSTAL STRUCTURE - A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A | 11-04-2010 |
| 20100111754 | Potassium and Sodium Filled Skutterudites - Interstitial voids of the cubic CoSb | 05-06-2010 |
| 20100071741 | THERMOELECTRIC MATERIAL INCLUDING A FILLED SKUTTERUDITE CRYSTAL STRUCTURE - A thermoelectric material includes a filled skutterudite crystal structure having the formula G | 03-25-2010 |
