SFI Electronics Technology Inc.
|SFI Electronics Technology Inc. Patent applications|
|Patent application number||Title||Published|
|20130011963||PROCESS FOR PRODUCING ZINC OXIDE VARISTOR - A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.||01-10-2013|
|20120208040||STRUCTURE OF MULTILAYER CERAMIC DEVICE - A multilayer ceramic device comprises a laminated ceramic body having opposite end surfaces, a pair of conductive electrodes each respectively attached to one end surface of the laminated ceramic body and a plurality of alternately staggered internal electrodes within the laminated ceramic body configured in an alternating manner and each electrically connected to the corresponding conductive electrodes respectively; each conductive electrodes of the multilayer ceramic device is further covered with a solder paste layer so that the multilayer ceramic device is thus made without any plating step and no need of treating waste liquid nickel or waste liquid tin as well as no problem of environmental pollution caused by plating solution, thereby lowering manufacturing costs and reducing processing time.||08-16-2012|
|20120135563||PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE - A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises:||05-31-2012|
|20120057265||ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION - A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO||03-08-2012|
|20100117271||Process for producing zinc oxide varistor - A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism.||05-13-2010|
Patent applications by SFI Electronics Technology Inc.