| SFI Electronics Technology Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120135563 | PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE - A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises:
| 05-31-2012 |
| 20120057265 | ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION - A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO | 03-08-2012 |
| 20100117271 | Process for producing zinc oxide varistor - A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism. | 05-13-2010 |
