| 20090173927 | Storage node, phase change memory device and methods of manufacturing and operating the same - Provided are a storage node, phase change memory device and methods of manufacturing and operating the same. The storage node may include an electrode, a phase change layer, and an anti-diffusion layer between the electrode and the phase change layer and including a silicide compound. The phase change memory device may include the storage node and a switching device connected to the storage node. | 07-09-2009 |
