Sensors Unlimited, Inc.
|Sensors Unlimited, Inc. Patent applications|
|Patent application number||Title||Published|
|20150309262||VISION ENHANCEMENT ILLUMINATORS - An illuminator comprising a short-wave infrared (SWIR) laser, a fiber optic, and a lens optic. The fiber optic is coupled to the SWIR laser for mixing the modes of a beam emitted by the SWIR laser. The lens optic is coupled to the fiber optic for shaping the beam into a top-hat beam profile. A method for creating SWIR illumination includes emitting a laser beam with multiple modes from a SWIR laser, transmitting the laser beam through a multi-mode fiber optic, and transmitting the laser beam through a lens optic. Transmitting the laser beam through the multi-mode fiber optic can including mixing modes of the laser beam thereby reducing speckle and constructive and destructive interference in the laser beam. Transmitting the laser beam through the lens optic can include generating a top-hat beam profile.||10-29-2015|
|20150281612||INTEGRATING PIXELS AND METHODS OF OPERATION - A pixel cell includes a first integration capacitor, a second integration capacitor, a photo detector and a transistor. The first integration capacitor includes a first lead operatively coupled to the photo detector. The second integration capacitor includes a first lead. The transistor is operatively coupled between the leads of the first and second integration capacitors for enabling current flow between the photo detector and the second integration capacitor only once a threshold voltage is met on the first integration capacitor.||10-01-2015|
|20150156426||SHORTWAVE INFRARED CAMERA WITH BANDWIDTH RESTRICTION - A camera comprises an image plane for capturing shortwave infrared wavelengths. The image plane captures only a portion of a shortwave infrared wavelength band, and excludes other wavelengths. A method of designing a camera is also disclosed.||06-04-2015|
|20150155676||VISION ENHANCEMENT ILLUMINATORS - An illuminator includes a short wave infrared (SWIR) laser, a lens collimator, a first beam shaping diffuser, a second beam shaping diffuser, and a bandpass filter. The lens collimator is optically coupled to the laser for diverging a beam emitted by the laser. The first beam shaping diffuser is optically coupled to the lens collimator to diffuse a diverged beam produced by the lens collimator. The second beam shaping diffuser is optically coupled to the first beam shaping diffuser to further diffuse a diffused beam produced by the first beam shaping diffuser. The bandpass filter is optically connected to the second beam shaping diffuser configured to filter the emissions of a further diffused beam produced by the second beam shaping diffuser.||06-04-2015|
|20140312450||Small Size, Weight, and Packaging of Image Sensors - A method and structure of an image sensor device including a read out integrated circuit (ROIC) and a photodiode array (PDA). An embodiment may include a package substrate having a recess and a raised pedestal within the recess; a read out integrated circuit (ROIC) physically attached to the raised pedestal; a photodiode array (PDA) physically attached to the ROIC and electrically coupled therewith; and a printed circuit board (PCB) within the recess in the package substrate, wherein the PCB has an opening therein and the raised pedestal at least partially extends through the opening in the PCB.||10-23-2014|
|20140264437||EPITAXIAL STRUCTURE FOR VERTICALLY INTEGRATED CHARGE TRANSFER GATE TECHNOLOGY IN OPTOELECTRONIC MATERIALS - A low noise infrared photo detector with a vertically integrated field effect transistor (FET) structure is formed without thermal diffusion. The FET structure includes a high sensitivity photo detector layer, a charge well layer, a transfer well layer, a charge transfer gate, and a drain electrode. In an embodiment, the photo detector layer and charge well are InGaAs and the other layers are InP layers.||09-18-2014|
|20140263955||READ OUT INTEGRATED CIRCUIT INPUT/OUTPUT ROUTING ON PERMANENT CARRIER - A focal plane array (FPA) comprising a photodiode array (PDA) and a read out integrated circuit (ROIC), wherein the FPA can include a plurality of conductive bumps that electrically couple PDA circuitry to ROIC circuitry. In an embodiment, an optically transparent lid can include a plurality traces electrically coupled to circuitry on the ROIC which can be used as a conductive path between the ROIC and external pads.||09-18-2014|
|20140263954||FOCAL PLANE ARRAY PERIPHERY THROUGH-VIAS FOR READ OUT INTEGRATED CIRCUIT - A focal plane array (FPA) including a photodiode array (PDA) and a read out integrated circuit (ROIC). The PDA can include a plurality of conductive through-vias extending through the PDA and electrically isolated from the PDA. The plurality of conductive through-vias can be electrically coupled to circuitry on the ROIC circuit side. The plurality of conductive through-vias can include I/O interconnects such as BGA or other flip-chip bump interconnects that replace conventional wire bond connections, thereby reducing area requirements for bond pads on the ROIC and providing full area coverage of the ROIC circuitry by the PDA bulk material. Embodiments may therefore eliminate wire bonds using bonding to a plurality of metal traces for routing of these interconnects. In an embodiment, an optically transparent lid can include a plurality traces electrically coupled to the plurality of conductive through-vias.||09-18-2014|
|20130183788||Multicolor Detectors And Applications Thereof - In one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention provide a first photosensitive element comprising at least one accessway extending through the element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a second photosensitive element.||07-18-2013|
|20110121423||Concentric Ring Mask for Controlling The Shape of a Planar PN Junction - A mask for use in making a planar PN junction in a semiconductor device includes a central mask opening and a plurality of spaced apart concentric mask openings surrounding the central mask opening. The concentric mask openings each have a width less than a maximum dimension of the central mask opening. The central mask opening can be circular and the concentric mask openings can have a ring-shape. The mask can be used to form openings in a wafer layer for introducing an impurity to dope that wafer layer.||05-26-2011|
|20090303363||APPARATUS AND METHOD FOR EXTENDING THE DYNAMIC RANGE OF A READ OUT INTEGRATED CIRCUIT OF AN IMAGE SENSOR - A read out integrated circuit includes (ROIC) an array of pixel circuits, each of which has a first charge storage element electrically connected across an amplifier, and a second charge storage element having a selectively activated electrical connection across the amplifier. First and second gain select switches are configured to control the selectively activated electrical connection so as to selectively place the second charge storage element in electrical parallel with the first charge storage element and cause both the first and said second charge storage elements to store charge in response to light detected by said associated pixel. The circuit includes gain control column lines, each gain control column line configured to control a plurality of the first gain select switches belonging to pixel circuits in an associated column of the array. The circuit also includes gain control row lines, each gain control row line configured to control a plurality of the second gain select switches belonging to pixel circuits in an associated row of the array.||12-10-2009|
Patent applications by Sensors Unlimited, Inc.