| SEN Corporation Patent applications |
| Patent application number | Title | Published |
|---|
| 20120015507 | PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD - A plasma doping apparatus for adding an impurity to a semiconductor substrate includes a chamber, a gas supply unit configured for supplying gas to the chamber, and a plasma source by which to cause the chamber to generate plasma of the supplied gas. The mixed gas containing material gas containing an impurity element to be added to the semiconductor substrate, hydrogen gas, and diluent gas for diluting the material gas is supplied to the chamber. | 01-19-2012 |
| 20110297842 | ION BEAM IRRADIATION SYSTEM AND ION BEAM IRRADIATION METHOD - An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction. | 12-08-2011 |
| 20110136329 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate an impurity thin film including an impurity atom which becomes a donor or an acceptor in the semiconductor substrate and performing an ion implantation from a diagonal upper direction to the impurity thin film deposited on the concavity and convexity part of the semiconductor substrate. The method still further comprises recoiling the impurity atom from the inside of the impurity thin film to the inside of the concavity and convexity part by performing the ion implantation. | 06-09-2011 |
