20130084526 | PHOTO-RESIST AND METHOD OF PHOTOLITHOGRAPHY - A photo-resist and a method for performing photolithography using the photo-resist are described. The photo-resist comprises a matrix resin, a first component and a second component. The first component is configured to produce a chemical amplification action and generates a first chemical substance when exposed to a light of a first wavelength band. The first chemical substance will react with the matrix resin to form a latent image. The second component is configured to generate a second chemical substance when exposed to a light of a second wavelength band. The second chemical substance reacts with the first chemical substance to reduce a mass concentration of the first chemical substance. | 04-04-2013 |